Abstract:
A solid-state imaging device includes an imaging region in which unit pixels which are obtained by arranging color filters in a photodiode are two-dimensionally arranged in matrix, and readout signal lines which are provided in plural with respect to an arbitrary one row at which the plurality of unit pixels are arranged, in which the readout signal lines are provided according to the number of color types of the plurality of unit pixels which are arranged at the one arbitrary row, and the same readout signal lines are connected to unit pixels of which color of color filters are the same, in the plurality of unit pixels which are arranged on the one arbitrary row.
Abstract:
An image processing device includes a first rearrangement circuit that receives, in parallel, pieces of line data included in image data. The first rearrangement circuit rearranges A-bit pixel data (where A is an integer that is greater than or equal to two) in the line data to arrange pixel data for only one color component in at least one of the line data. LUT correction circuits, arranged in correspondence with the line data, each include a memory that stores a lookup table and correct the rearranged A-bit pixel data using the corresponding lookup table. A second rearrangement circuit rearranges the corrected A-bit pixel data to return the A-bit pixel data rearranged by the first rearrangement circuit to an original arrangement order.
Abstract:
Image sensors, image pickup devices, and electronic apparatuses are provided. These can include an image sensor or image pickup device that includes a first insulating layer over a semiconductor substrate. A depression section is formed in the first insulating layer. An organic photoelectric conversion section fills the depression section. One or more inorganic photoelectric conversion sections can also be provided, with the organic photoelectric conversion section overlapping the inorganic photoelectric conversion sections. Alternatively or in addition, the depression section can taper from a side adjacent a light receiving side of the image sensor to a side adjacent the at least a first inorganic photoelectric conversion section.
Abstract:
According to one embodiment, a solid-state imaging device includes a pixel array unit in which pixels for accumulating photoelectric-converted charges are arranged in a matrix of a row direction and a column direction; and a vertical scanning circuit in which drivers for driving the pixels are dispersed in each of rows.
Abstract:
An image sensor supporting a normal sampling mode and a 1/N sampling mode for transmitting image data detected by a plurality of unit image sensors and stored in a plurality of latch circuits to a data processor using a plurality of transmission lines, wherein N is a natural number greater than 2, the image sensor including a horizontal address generator configured to generate horizontal addresses corresponding to addresses of the plurality of latch circuits, and to generate, based on the horizontal addresses, a first channel selection control signal and a second channel selection control signal of which activation times at least partially overlap.
Abstract:
An image sensor includes a pixel array and a calibration circuit. The pixel array includes a plurality of pixels each of which includes a photoelectric conversion device configured to absorb incident light and generate a photocharge, a transfer transistor configured to transfer the photocharge from the photoelectric conversion device to a floating diffusion node, and a reset transistor configured to reset the floating diffusion node. The calibration circuit is connected to the reset transistor of each pixel, and is configured to apply a different voltage to each pixel and adjust an amount of photocharge generated by the photoelectric conversion device in each pixel.
Abstract:
An image sensor and an image processing system. The image sensor comprises: a CMOS photosensitive array used for converting an optical signal into an electrical signal; a control signal conversion circuit used for converting into a second control signal a first control signal for driving a CCD photosensitive array to operate, the first control signal at least comprising a vertical transfer signal, a horizontal transfer signal, an electronic shutter signal and a read-out clock signal, and the second control signal at least comprising a column address signal, a row reset control signal and a row read-out control signal; a row selection circuit used for generating a row reset signal according to the row reset control signal and generating a row read-out signal according to the row read-out control signal; and a column selection circuit used for conducting column gating on the CMOS photosensitive array under the control of the column address signal and outputting a column read-out signal. The technical solution of the present invention achieves the compatibility substitution of a CCD image sensor and a CMOS image sensor.
Abstract:
A camera array, an imaging device and/or a method for capturing image that employ a plurality of imagers fabricated on a substrate is provided. Each imager includes a plurality of pixels. The plurality of imagers include a first imager having a first imaging characteristics and a second imager having a second imaging characteristics. The images generated by the plurality of imagers are processed to obtain an enhanced image compared to images captured by the imagers. Each imager may be associated with an optical element fabricated using a wafer level optics (WLO) technology.
Abstract:
A camera array, an imaging device and/or a method for capturing image that employ a plurality of imagers fabricated on a substrate is provided. Each imager includes a plurality of pixels. The plurality of imagers include a first imager having a first imaging characteristics and a second imager having a second imaging characteristics. The images generated by the plurality of imagers are processed to obtain an enhanced image compared to images captured by the imagers. Each imager may be associated with an optical element fabricated using a wafer level optics (WLO) technology.
Abstract:
The present technology relates to an image sensor and a control method for an image sensor which are capable of measuring illuminance of each color in an image sensor. Each of a plurality of pixel units includes a pixel and a reset transistor, and the pixel includes a photoelectric converting unit that performs photoelectric conversion on light of a certain color incident through a color filter and a transfer transistor that transfers charges obtained by the photoelectric conversion of the photoelectric converting unit and is controllable for each color. According to control of the transfer transistor, the charges are read from the photoelectric converting unit through the transfer transistor and the reset transistor, and a voltage corresponding to the charges is supplied to an AD converting unit connected to the reset transistor. The present technology can be applied to, for example, an image sensor that photographs an image.