公开(公告)号：US20140158187A1

公开(公告)日：2014-06-12

申请号：US13749263

申请日：2013-01-24

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： Bahman Hekmatshoartabari ,  Ali Khakifirooz ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

IPC分类号： H01L31/065

CPC分类号： H01L31/065 ,  H01L31/02168 ,  H01L31/022433 ,  H01L31/068 ,  H01L31/1804 ,  Y02E10/50 ,  Y02E10/547 ,  Y02P70/521

摘要： A method for fabricating a photovoltaic device includes forming a patterned layer on a doped emitter portion of the photovoltaic device, the patterned layer including openings that expose areas of the doped emitter portion and growing an epitaxial layer over the patterned layer such that a crystalline phase grows in contact with the doped emitter portion and a non-crystalline phase grows in contact with the patterned layer. The non-crystalline phase is removed from the patterned layer. Conductive contacts are formed on the epitaxial layer in the openings to form a contact area for the photovoltaic device.

摘要翻译： 一种用于制造光伏器件的方法包括在光伏器件的掺杂发射极部分上形成图案化层，所述图案化层包括暴露掺杂发射极部分的区域并在图案化层上生长外延层的开口，使得结晶相生长 与掺杂的发射极部分接触并且非结晶相生长与图案化层接触。 从图案化层去除非结晶相。 导电触点形成在开口中的外延层上，以形成光伏器件的接触面积。

公开(公告)号：US20140053896A1

公开(公告)日：2014-02-27

申请号：US14002686

申请日：2012-02-22

申请人： Stefan Jost ,  Jorg Palm

发明人： Stefan Jost ,  Jorg Palm

IPC分类号： H01L31/18 ,  H01L31/065

CPC分类号： H01L31/18 ,  H01L21/02557 ,  H01L21/0256 ,  H01L21/02568 ,  H01L21/02614 ,  H01L31/0326 ,  H01L31/065 ,  H01L31/072 ,  Y02E10/50

摘要： A method for producing a compound semiconductor composed of pentanary kesterite/stannite of the type Cu2ZnSn(S,Se)4 is described. The method has the following steps: producing at least one precursor layer stack consisting of a first precursor layer and a second precursor layer; thermally treating the at least one precursor layer stack in a process chamber; and feeding at least one process gas into the process chamber during the thermal treatment of the at least one precursor layer stack. Furthermore, a thin-film solar cell with an absorber consisting of the pentanary compound semiconductor Cu2ZnSn(S,Se)4 on a body is described.

摘要翻译： 描述了由Cu2ZnSn（S，Se）4类型的pentanary kesterite /锡酸盐组成的化合物半导体的制造方法。 该方法具有以下步骤：产生由第一前体层和第二前体层组成的至少一个前体层叠层; 在处理室中热处理所述至少一个前体层堆叠; 以及在所述至少一个前体层堆叠的热处理期间将至少一种工艺气体供给到所述处理室中。 此外，描述了具有由主体上的五元化合物半导体Cu 2 ZnSn（S，Se）4组成的吸收体的薄膜太阳能电池。

公开(公告)号：US20130186457A1

公开(公告)日：2013-07-25

申请号：US13626707

申请日：2012-09-25

申请人： LG Electronics Inc.

发明人： Gyeayoung KWAG ,  Sungbong MA ,  Sungyeon CHO ,  Myungjun SHIN ,  Taeyoung KWON ,  Haejong CHO

IPC分类号： H01L31/065 ,  H01L31/18

CPC分类号： H01J37/3171 ,  H01J37/317 ,  H01J2237/31703 ,  H01J2237/31711 ,  H01L31/068 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： A solar cell, a solar cell manufacturing device, and a method for manufacturing the solar cell are discussed. The solar cell manufacturing device includes a chamber; an ion implantation unit configured to implant ions into a substrate inside the chamber and a mask positioned between the ion implantation unit and the substrate. The mask includes a first opening to form a lightly doped region having a first concentration at one surface of the substrate, a second opening to form a heavily doped region having a second concentration higher than the first concentration at the one surface of the substrate, and at least one connector formed to cross the second opening. The second opening includes finger openings formed in a first direction, and bus openings formed in a second direction crossing the first direction.

摘要翻译： 讨论太阳能电池，太阳能电池制造装置和太阳能电池的制造方法。 太阳能电池制造装置包括：室; 离子注入单元，被配置为将离子注入到腔室内的衬底中，以及掩模，其位于离子注入单元和衬底之间。 掩模包括第一开口以形成在衬底的一个表面处具有第一浓度的轻掺杂区域，第二开口以形成在衬底的一个表面处具有高于第一浓度的第二浓度的重掺杂区域，以及 形成为穿过第二开口的至少一个连接器。 第二开口包括沿第一方向形成的指形开口和沿与第一方向交叉的第二方向形成的总线开口。

公开(公告)号：US20130125966A1

公开(公告)日：2013-05-23

申请号：US13807263

申请日：2011-06-30

申请人： William N. Reining

发明人： William N. Reining

IPC分类号： H01L31/065

CPC分类号： H01L31/065 ,  H01L31/03529 ,  H01L31/047 ,  H01L31/0543 ,  Y02E10/52

摘要： A solar cell is disclosed. The solar cell includes a p-type doped semiconductor material and an n-type doped semiconductor material laterally adjacent to the p-type material. The p-type material and n-type material form a stripped structure with finite depth, and form a vertically structured diode at the junction of the p-type material and n-type material. The vertically structured diode has its depth determined by a multiple of an electromagnetic skin depth of at least one of the p-type material or n-type material, and a width of a depletion layer is controlled by a doping concentration of the p-type and n-type material. A solar cell having a refractory material forming an optical element provided on a sun facing surface of the solar cell and adapted to direct photons to a depletion region of a vertically structured photodiode is also disclosed.

摘要翻译： 公开了一种太阳能电池。 太阳能电池包括p型掺杂半导体材料和与p型材料横向相邻的n型掺杂半导体材料。 p型材料和n型材料形成具有有限深度的剥离结构，并且在p型材料和n型材料的接合处形成垂直结构的二极管。 垂直结构的二极管的深度由p型材料或n型材料中的至少一种的电磁表层深度的倍数确定，并且耗尽层的宽度由p型掺杂浓度 和n型材料。 还公开了一种具有形成光学元件的耐火材料的太阳能电池，该太阳能电池设置在太阳能电池的面向太阳的表面上并且适于将光子引导到垂直结构的光电二极管的耗尽区。

公开(公告)号：US5563075A

公开(公告)日：1996-10-08

申请号：US458098

申请日：1995-06-01

申请人： Keishi Saito ,  Tatsuyuki Aoike ,  Masafumi Sano ,  Mitsuyuki Niwa ,  Ryo Hayashi ,  Masahiko Tonogaki

发明人： Keishi Saito ,  Tatsuyuki Aoike ,  Masafumi Sano ,  Mitsuyuki Niwa ,  Ryo Hayashi ,  Masahiko Tonogaki

IPC分类号： H01L31/0392 ,  H01L31/052 ,  H01L31/065 ,  H01L31/075 ,  H01L31/18 ,  H01L31/20

CPC分类号： H01L31/065 ,  H01L31/03921 ,  H01L31/056 ,  H01L31/075 ,  H01L31/1884 ,  H01L31/202 ,  H01L31/204 ,  Y02E10/52 ,  Y02E10/548 ,  Y02P70/521 ,  Y10S136/293

摘要： A non-monocrystalline silicon semiconductor device having a pin junction is formed by forming a first doped semiconductor layer of a first conductivity disposed on a substrate. A first intrinsic layer is deposited on the first doped semiconductor layer employing RF energy. A second intrinsic layer is deposited on the first intrinsic layer employing microwave energy and RF energy simultaneously. A semiconductor precursor gas, including germanium and a semiconductor precursor gas including silicon are supplied to the second intrinsic layer during its formation. The content of the semiconductor precursor gas containing germanium is greater than the semiconductor gas including silicon in the layer thickness direction in the second intrinsic layer at a P-layer side. A second doped semiconductor layer is deposited on the second intrinsic layer.

摘要翻译： 具有pin结的非单晶硅半导体器件通过形成布置在衬底上的第一导电性的第一掺杂半导体层而形成。 使用RF能量将第一本征层沉积在第一掺杂半导体层上。 使用微波能量和RF能量同时沉积在第一本征层上的第二本征层。 包括锗和包含硅的半导体前体气体的半导体前体气体在其形成期间被提供给第二本征层。 包含锗的半导体前体气体的含量比在P层侧的第二本征层中的层厚度方向上包括硅的半导体气体的含量大。 第二掺杂半导体层沉积在第二本征层上。

公开(公告)号：US4667059A

公开(公告)日：1987-05-19

申请号：US790600

申请日：1985-10-22

申请人： Jerry M. Olson

发明人： Jerry M. Olson

IPC分类号： H01L31/0304 ,  H01L31/065 ,  H01L31/18

CPC分类号： H01L31/0687 ,  H01L31/03046 ,  H01L31/065 ,  Y02E10/544

摘要： A multijunction (cascade) tandem photovoltaic solar cell device is fabricated of a Ga.sub.x In.sub.1-x P (0.505.ltoreq.X.ltoreq.0.515) top cell semiconductor lattice matched to a GaAs bottom cell semiconductor at a low-resistance heterojunction, preferably a p+/n+ heterojunction between the cells. The top and bottom cells are both lattice matched and current matched for high efficiency solar radiation conversion to electrical energy.

摘要翻译： 多结（级联）串联光伏太阳能电池器件由在低电阻异质结处与GaAs底部单元半导体匹配的GaxIn1-xP（0.505≤X= 0.515）顶部单元半导体晶格制造，优选为p + / n +细胞之间的异质结。 顶部和底部电池都是晶格匹配和电流匹配，用于高效率太阳辐射转换成电能。

公开(公告)号：US4371232A

公开(公告)日：1983-02-01

申请号：US143695

申请日：1980-04-25

申请人： James D. Jensen ,  Richard B. Schoolar

发明人： James D. Jensen ,  Richard B. Schoolar

IPC分类号： C30B23/00 ,  C30B23/04 ,  H01L31/032 ,  H01L31/065 ,  H01L27/14 ,  G02B1/02

CPC分类号： H01L31/065 ,  C30B23/007 ,  C30B23/04 ,  C30B29/46 ,  H01L31/0324 ,  Y02E10/50

摘要： A variable temperature method for the preparation of single and multiple taxial layers of single-phase (e.g., face-centered cubic), ternary lead chalcogenide alloys (e.g., lead cadmium sulfide [Pb.sub.1-w Cd.sub.w ].sub.a [S].sub.1-a wherein w varies between zero and fifteen hundredths, inclusive, and a=0.500.+-.0.003), deposited upon substrates of barium fluoride, BaF.sub.2, maintained in near thermodynamic equilibrium with concurrently sublimated lead alloy and chalcogenide sources. During preparation, the temperature of the substrate is varied, thereby providing an epilayer with graded composition and predetermined electrical and optical properties along the direction of growth. This growth technique can be used to produce infrared lenses, narrowband detectors, and double heterojunction lasers.

摘要翻译： 用于制备单相（例如，面心立方）三元铅硫族化物合金（例如，硫化铅[Pb1-wCdw] a [S] 1-a）的单个和多个外延层的可变温度方法，其中w 变化在零和百分之零零零之间，并且a = 0.500 +/- 0.003），沉积在与同时升华的铅合金和硫族化物源保持接近热力学平衡的氟化钡BaF2的衬底上。 在制备过程中，衬底的温度是变化的，从而提供具有渐变组成的外延层和沿着生长方向的预定的电学和光学特性。 该生长技术可用于生产红外透镜，窄带检测器和双异质结激光器。

公开(公告)号：US4227948A

公开(公告)日：1980-10-14

申请号：US864417

申请日：1977-12-27

申请人： James D. Jensen ,  Richard B. Schoolar

发明人： James D. Jensen ,  Richard B. Schoolar

IPC分类号： C30B23/00 ,  C30B23/04 ,  H01L21/365 ,  H01L31/032 ,  H01L31/04 ,  H01L31/065 ,  H01L21/203

CPC分类号： H01L31/065 ,  C30B23/007 ,  C30B23/04 ,  C30B29/46 ,  H01L31/0324 ,  Y02E10/50 ,  Y10S438/93 ,  Y10S438/936

摘要： A variable temperature method for the preparation of single and multiple taxial layers of single-phase (e.g., face-centered cubic), ternary lead chalcogenide alloys (e.g., lead cadmium sulfide, [Pb.sub.1-w Cd.sub.w ].sub.a [S].sub.1-a wherein w varies between zero and fifteen hundredths, inclusive, and a=0.500.+-.0.003), deposited upon substrates of barium fluoride, BaF.sub.2, maintained in near thermodynamic equilibrium with concurrently sublimated lead alloy and chalcogenide sources. During preparation, the temperature of the substrate is varied, thereby providing an epilayer with graded composition and predetermined electrical and optical properties along the direction of growth. This growth technique can be used to produce infrared lenses, narrowband detectors, and double heterojunction lasers.

摘要翻译： 用于制备单相（例如，面心立方）三元铅硫族化物合金（例如，硫化铅，[Pb1-wCdw] a [S] 1-a）的单个和多个外延层的可变温度方法，其中 w在不同的升华铅合金和硫族化合物源之间保持在接近热力学平衡状态下沉积在氟化钡BaF2的基底上的零和百分之零和百分之零和百分之零零零零，并且a = 0.500 +/- 0.003）。 在制备过程中，衬底的温度是变化的，从而提供具有渐变组成的外延层和沿着生长方向的预定的电学和光学特性。 该生长技术可用于生产红外透镜，窄带检测器和双异质结激光器。

公开(公告)号：US4199383A

公开(公告)日：1980-04-22

申请号：US881936

申请日：1978-02-28

申请人： David B. Wittry

发明人： David B. Wittry

IPC分类号： H01L31/065 ,  H01L31/072 ,  H01L27/14

CPC分类号： H01L31/065 ,  H01L31/072 ,  Y02E10/50

摘要： A photovoltaic cell that incorporates a PbO-SnO heterojunction of graded composition which, among other applications, can be utilized for the conversion of solar energy to electrical energy. A p-i-n junction is formed while PbO and SnO are simultaneously deposited on a substrate in a varying ratio that is either decreased or increased to form the compositions Pb.sub.1-x Sn.sub.x O where x varies in the range of 0 to 1.

摘要翻译： 一种光伏电池，其结合了分级组合物的PbO-SnO异质结，除其他应用之外，可以将太阳能转换为电能。 形成p-i-n结，同时PbO和SnO以不同比例同时沉积在衬底上，所述变化比例降低或增加以形成组合物Pb1-xSnxO，其中x在0至1的范围内变化。

公开(公告)号：US11784278B2

公开(公告)日：2023-10-10

申请号：US17963061

申请日：2022-10-10

申请人： First Solar, Inc.

发明人： Kristian William Andreini ,  Holly Ann Blaydes ,  Jongwoo Choi ,  Adam Fraser Halverson ,  Eugene Thomas Hinners ,  William Hullinger Huber ,  Yong Liang ,  Joseph John Shiang

IPC分类号： H01L31/18 ,  H01L31/0224 ,  H01L31/0296 ,  H01L31/065 ,  H01L31/073

CPC分类号： H01L31/1828 ,  H01L31/02966 ,  H01L31/022425 ,  H01L31/065 ,  H01L31/073 ,  H01L31/1832 ,  Y02E10/543 ,  Y02P70/50

摘要： Embodiments of a photovoltaic device are provided herein. The photovoltaic device can include a layer stack and an absorber layer disposed on the layer stack. The absorber layer can include a first region and a second region. Each of the first region of the absorber layer and the second region of the absorber layer can include a compound comprising cadmium, selenium, and tellurium. An atomic concentration of selenium can vary across the absorber layer. The first region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. The second region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. A ratio of an average atomic concentration of selenium in the first region of the absorber layer to an average atomic concentration of selenium in the second region of the absorber layer can be greater than 10.