公开(公告)号：US20100240185A1

公开(公告)日：2010-09-23

申请号：US12658520

申请日：2010-02-11

申请人： Woong-hee Sohn ,  Byung-hee Kim ,  Dae-yong Kim ,  Min-sang Song ,  Gil-heyun Choi ,  Kwang-jin Moon ,  Hyun-su Kim ,  Jang-hee Lee ,  Eun-ji Jung ,  Eun-ok Lee

发明人： Woong-hee Sohn ,  Byung-hee Kim ,  Dae-yong Kim ,  Min-sang Song ,  Gil-heyun Choi ,  Kwang-jin Moon ,  Hyun-su Kim ,  Jang-hee Lee ,  Eun-ji Jung ,  Eun-ok Lee

IPC分类号： H01L21/336

CPC分类号： H01L29/7827 ,  H01L27/10876 ,  H01L29/456 ,  H01L29/66666

摘要： A method of manufacturing a semiconductor device includes: forming a trench for forming buried type wires by etching a substrate; forming first and second oxidation layers on a bottom of the trench and a wall of the trench, respectively; removing a part of the first oxidation layer and the entire second oxidation layer; and forming the buried type wires on the wall of the trench by performing a silicide process on the wall of the trench from which the second oxidation layer is removed. As a result, the buried type wires are insulated from each other.

摘要翻译： 一种制造半导体器件的方法包括：通过蚀刻衬底形成用于形成掩埋型线的沟槽; 在沟槽的底部和沟槽的壁上分别形成第一和第二氧化层; 去除一部分第一氧化层和整个第二氧化层; 以及通过在去除所述第二氧化层的所述沟槽的壁上执行硅化物处理，在所述沟槽的壁上形成所述埋入式导线。 结果，埋入式电线彼此绝缘。

公开(公告)号：US07544597B2

公开(公告)日：2009-06-09

申请号：US11332476

申请日：2006-01-17

申请人： Hee-Sook Park ,  Gil-Heyun Choi ,  Chang-Won Lee ,  Byung-Hak Lee ,  Sun-Pil Youn ,  Dong-Chan Lim ,  Jae-Hwa Park ,  Jang-Hee Lee ,  Woong-Hee Sohn

发明人： Hee-Sook Park ,  Gil-Heyun Choi ,  Chang-Won Lee ,  Byung-Hak Lee ,  Sun-Pil Youn ,  Dong-Chan Lim ,  Jae-Hwa Park ,  Jang-Hee Lee ,  Woong-Hee Sohn

IPC分类号： H01L21/44

CPC分类号： H01L29/4933 ,  C23C16/42 ,  H01L21/28061 ,  H01L21/28194 ,  H01L21/28556 ,  H01L21/76846 ,  H01L29/517

摘要： In an ohmic layer and methods of forming the ohmic layer, a gate structure including the ohmic layer and a metal wiring having the ohmic layer, the ohmic layer is formed using tungsten silicide that includes tungsten and silicon with an atomic ratio within a range of about 1:5 to about 1:15. The tungsten silicide may be obtained in a chamber using a reaction gas including a tungsten source gas and a silicon source gas by a partial pressure ratio within a range of about 1.0:25.0 to about 1.0:160.0. The reaction gas may have a partial pressure within a range of about 2.05 percent to about 30.0 percent of a total internal pressure of the chamber. When the ohmic layer is employed for a conductive structure, such as a gate structure or a metal wiring, the conductive structure may have a reduced resistance.

摘要翻译： 在欧姆层和形成欧姆层的方法中，包括欧姆层的栅极结构和具有欧姆层的金属布线，欧姆层使用包含钨和硅的钨硅化物形成，原子比在约 1:5至约1:15。 可以在室内使用包含钨源气体和硅源气体的反应气体，在约1.0:25.0至约1.0:16.0.0的范围内的分压比获得硅化钨。 反应气体可以具有在室的总内部压力的约2.05％至约30.0％的范围内的分压。 当欧姆层用于诸如栅极结构或金属布线的导电结构时，导电结构可以具有降低的电阻。

公开(公告)号：US20080200031A1

公开(公告)日：2008-08-21

申请号：US12007999

申请日：2008-01-18

申请人： Jang-hee Lee ,  Tae-ho Cha ,  Hae-sook Park ,  Gil-heyun Choi ,  Byung-hee Kim

发明人： Jang-hee Lee ,  Tae-ho Cha ,  Hae-sook Park ,  Gil-heyun Choi ,  Byung-hee Kim

IPC分类号： H01L21/44

CPC分类号： H01L21/28061 ,  H01L29/4941 ,  H01L29/78

摘要： A method of forming a gate electrode of a semiconductor device according to example embodiments that may include forming a polysilicon film on a semiconductor substrate. An interface control layer may be formed on the polysilicon film by repeating a unit cycle a plurality of times. The unit cycle may include forming an interface metal film and nitriding an upper surface portion of the interface metal film to form an interface metal nitride film on an upper surface portion of the interface metal film. A wiring metal film may be formed on the interface control layer.

摘要翻译： 根据示例实施例的形成半导体器件的栅电极的方法，其可以包括在半导体衬底上形成多晶硅膜。 可以通过多次重复单位周期在多晶硅膜上形成界面控制层。 单元循环可以包括形成界面金属膜并氮化界面金属膜的上表面部分以在界面金属膜的上表面部分上形成界面金属氮化物膜。 可以在界面控制层上形成布线金属膜。

公开(公告)号：US07371669B2

公开(公告)日：2008-05-13

申请号：US11283121

申请日：2005-11-18

申请人： Sun-Pil Youn ,  Chang-Won Lee ,  Woong-Hee Sohn ,  Gil-Heyun Choi ,  Jong-Ryeol Yoo ,  Jang-Hee Lee ,  Jae-Hwa Park ,  Dong-Chan Lim ,  Byung-Hak Lee ,  Hee-Sook Park

发明人： Sun-Pil Youn ,  Chang-Won Lee ,  Woong-Hee Sohn ,  Gil-Heyun Choi ,  Jong-Ryeol Yoo ,  Jang-Hee Lee ,  Jae-Hwa Park ,  Dong-Chan Lim ,  Byung-Hak Lee ,  Hee-Sook Park

IPC分类号： H01L21/3205

CPC分类号： H01L21/28247 ,  H01L21/28044 ,  H01L29/4925

摘要： In a method for forming a gate in a semiconductor device, a first preliminary gate structure is formed on a substrate. The first preliminary gate structure includes a gate oxide layer, a polysilicon layer pattern and a tungsten layer pattern sequentially stacked on the substrate. A primary oxidation process is performed using oxygen radicals at a first temperature for adjusting a thickness of the gate oxide layer to form a second preliminary gate structure having tungsten oxide. The tungsten oxide is reduced to a tungsten material using a gas containing hydrogen to form a gate structure. The tungsten oxide may not be formed on the gate structure so that generation of the whiskers may be suppressed. Thus, a short between adjacent wirings may not be generated.

摘要翻译： 在半导体器件中形成栅极的方法中，在衬底上形成第一预栅极结构。 第一预选栅极结构包括依次层叠在基板上的栅极氧化物层，多晶硅层图案和钨层图案。 在第一温度下使用氧自由基进行一次氧化处理，以调节栅极氧化物层的厚度以形成具有氧化钨的第二初步栅极结构。 使用含氢气体将钨氧化物还原成钨材料以形成栅极结构。 在栅极结构上可能不形成氧化钨，从而可以抑制晶须的产生。 因此，可能不会产生相邻布线之间的短路。

公开(公告)号：US07300887B2

公开(公告)日：2007-11-27

申请号：US11227542

申请日：2005-09-15

申请人： Jae-Hwa Park ,  Kwang-Jin Moon ,  Gil-Heyun Choi ,  Sang-Woo Lee ,  Jeong-Tae Kim ,  Jang-Hee Lee

发明人： Jae-Hwa Park ,  Kwang-Jin Moon ,  Gil-Heyun Choi ,  Sang-Woo Lee ,  Jeong-Tae Kim ,  Jang-Hee Lee

IPC分类号： H01L21/31

CPC分类号： H01L21/28556 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/76862 ,  H01L28/60

摘要： Methods of forming metal nitride layers on a substrate include reacting a metal source gas with a nitrogen source gas in a process chamber to form a metal nitride layer on the substrate. The process chamber may have an atmosphere having a pressure of about 0.1 mTorr to about 5 mTorr and a temperature of about 200° C. to about 450° C. A ratio of the flow rate of the metal source gas to the flow rate of the nitrogen source gas may be “1” or more. An interlayer insulating layer may be formed on the semiconductor substrate prior to formation of the metal nitride layer. Some methods include forming a contact hole in the interlayer insulating layer to expose a portion of the semiconductor substrate prior to forming the metal nitride layer

摘要翻译： 在基板上形成金属氮化物层的方法包括在处理室中使金属源气体与氮源气体反应，以在衬底上形成金属氮化物层。 处理室可以具有约0.1mTorr至约5mTorr的压力和约200℃至约450℃的温度的气氛。金属源气体的流量与流动速率的比率 氮源气体可以为“1”以上。 在形成金属氮化物层之前，可以在半导体衬底上形成层间绝缘层。 一些方法包括在层间绝缘层中形成接触孔，以在形成金属氮化物层之前露出半导体衬底的一部分

公开(公告)号：US07178160B2

公开(公告)日：2007-02-13

申请号：US09840515

申请日：2001-04-23

申请人： Ki-Won Jeong ,  Joong-Jeh Park ,  Min-Gu Kim ,  Jang-Hee Lee ,  Yong-Kook Lee

发明人： Ki-Won Jeong ,  Joong-Jeh Park ,  Min-Gu Kim ,  Jang-Hee Lee ,  Yong-Kook Lee

IPC分类号： H04N7/20

CPC分类号： H04H40/90 ,  H01Q1/125 ,  H01Q1/1257 ,  H01Q3/08 ,  H01Q3/10 ,  H04N7/20 ,  H04N21/485

摘要： A satellite broadcast receiver comprises an antenna, a tuner, a modulator, a FEC decoder, a microprocessor, and an antenna driver. The antenna receives the satellite signal and the tuner tunes the satellite signal received by the antenna, and the modulator modulates the satellite signal tuned by the tuner into digital signal, the FEC decoder corrects a position error of the satellite antenna using the signal modulated by the modulator, and outputs a corresponding output signal, and the microprocessor receives the signal modulated by the modulator and the output signal of the error corrector, and outputs a control signal which controls the position of the antenna, and the antenna driver drives the antenna in accordance with the control signal of the microprocessor. The satellite broadcast receiver enables a user to detect satellites fast and see satellite broadcast conveniently.

摘要翻译： 卫星广播接收机包括天线，调谐器，调制器，FEC解码器，微处理器和天线驱动器。 天线接收卫星信号，调谐器调谐由天线接收的卫星信号，并且调制器将由调谐器调谐的卫星信号调制成数字信号，FEC解码器使用由该调制信号调制的信号来校正卫星天线的位置误差 并且输出相应的输出信号，并且微处理器接收由调制器调制的信号和误差校正器的输出信号，并输出控制天线位置的控制信号，并且天线驱动器根据天线驱动天线 与微处理器的控制信号。 卫星广播接收机使得用户能够快速地检测卫星，方便地观看卫星广播。

公开(公告)号：US20060180875A1

公开(公告)日：2006-08-17

申请号：US11332476

申请日：2006-01-17

申请人： Hee-Sook Park ,  Gil-Heyun Choi ,  Chang-Won Lee ,  Byung-Hak Lee ,  Sun-Pil Youn ,  Dong-Chan Lim ,  Jae-Hwa Park ,  Jang-Hee Lee ,  Woong-Hee Sohn

发明人： Hee-Sook Park ,  Gil-Heyun Choi ,  Chang-Won Lee ,  Byung-Hak Lee ,  Sun-Pil Youn ,  Dong-Chan Lim ,  Jae-Hwa Park ,  Jang-Hee Lee ,  Woong-Hee Sohn

IPC分类号： H01L29/40 ,  H01L21/44

CPC分类号： H01L29/4933 ,  C23C16/42 ,  H01L21/28061 ,  H01L21/28194 ,  H01L21/28556 ,  H01L21/76846 ,  H01L29/517

摘要： In an ohmic layer and methods of forming the ohmic layer, a gate structure including the ohmic layer and a metal wiring having the ohmic layer, the ohmic layer is formed using tungsten silicide that includes tungsten and silicon with an atomic ratio within a range of about 1:5 to about 1:15. The tungsten silicide may be obtained in a chamber using a reaction gas including a tungsten source gas and a silicon source gas by a partial pressure ratio within a range of about 1.0:25.0 to about 1.0:160.0. The reaction gas may have a partial pressure within a range of about 2.05 percent to about 30.0 percent of a total internal pressure of the chamber. When the ohmic layer is employed for a conductive structure, such as a gate structure or a metal wiring, the conductive structure may have a reduced resistance.

摘要翻译： 在欧姆层和形成欧姆层的方法中，包括欧姆层的栅极结构和具有欧姆层的金属布线，欧姆层使用包含钨和硅的硅化钨形成，原子比在约 1:5至约1:15。 可以在室内使用包含钨源气体和硅源气体的反应气体，在约1.0:25.0至约1.0:16.0.0的范围内的分压比获得硅化钨。 反应气体可以具有在室的总内部压力的约2.05％至约30.0％的范围内的分压。 当欧姆层用于诸如栅极结构或金属布线的导电结构时，导电结构可以具有降低的电阻。

公开(公告)号：US20060115984A1

公开(公告)日：2006-06-01

申请号：US11227542

申请日：2005-09-15

申请人： Jae-Hwa Park ,  Kwang-Jin Moon ,  Gil-Heyun Choi ,  Sang-Woo Lee ,  Jeong-Tae Kim ,  Jang-Hee Lee

发明人： Jae-Hwa Park ,  Kwang-Jin Moon ,  Gil-Heyun Choi ,  Sang-Woo Lee ,  Jeong-Tae Kim ,  Jang-Hee Lee

IPC分类号： H01L21/4763

CPC分类号： H01L21/28556 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/76862 ,  H01L28/60

摘要： Methods of forming metal nitride layers on a substrate include reacting a metal source gas with a nitrogen source gas in a process chamber to form a metal nitride layer on the substrate. The process chamber may have an atmosphere having a pressure of about 0.1 mTorr to about 5 mTorr and a temperature of about 200° C. to about 450° C. A ratio of the flow rate of the metal source gas to the flow rate of the nitrogen source gas may be “1” or more. An interlayer insulating layer may be formed on the semiconductor substrate prior to formation of the metal nitride layer. Some methods include forming a contact hole in the interlayer insulating layer to expose a portion of the semiconductor substrate prior to forming the metal nitride layer

摘要翻译： 在基板上形成金属氮化物层的方法包括在处理室中使金属源气体与氮源气体反应，以在衬底上形成金属氮化物层。 处理室可以具有约0.1mTorr至约5mTorr的压力和约200℃至约450℃的温度的气氛。金属源气体的流量与流动速率的比率 氮源气体可以为“1”以上。 在形成金属氮化物层之前，可以在半导体衬底上形成层间绝缘层。 一些方法包括在层间绝缘层中形成接触孔，以在形成金属氮化物层之前露出半导体衬底的一部分

公开(公告)号：US20050172622A1

公开(公告)日：2005-08-11

申请号：US10504805

申请日：2003-02-14

申请人： Young-Min Kim ,  Dong-Gil Shin ,  Jang-Hee Lee

发明人： Young-Min Kim ,  Dong-Gil Shin ,  Jang-Hee Lee

IPC分类号： F02G1/043 ,  F01C11/00 ,  F01K7/00 ,  F02B53/00 ,  F04C18/02 ,  F04C23/00 ,  F25B9/06 ,  F25B9/14 ,  F01B1/00 ,  F01K1/00 ,  F02B1/00

CPC分类号： F01K7/00 ,  F01C11/004 ,  F01K27/00 ,  F02B53/00 ,  F04C18/0223 ,  F04C23/003 ,  F25B9/06 ,  F25B9/14 ,  F25B2309/1401

摘要： The present invention provides a scroll-type expander that simultaneously performs expansion and re-heating such that efficient expansion is realized and there is no reduction in efficiency caused by pressure loss occurring during the supply of an working fluid to the scroll-type expander, and that minimizes a difference in temperature between a stationary scroll member and a rotating scroll member, as well as a temperature distribution of a scroll wrap. The present invention also relates to a heat exchange system that uses a scroll-type expander to replace pistons in a conventional reciprocating Stirling engine or refrigerator with a pair of scroll-type compressor and expander such that the heat exchange system may be used as a Stirling engine or refrigerator. The present invention also provides a steam engine, in which a steam turbine in the conventional steam engine (Rankine system) is replaced with a scroll-type expander such that the steam cycle has both a re-heating cycle and a regeneration cycle.

摘要翻译： 本发明提供一种涡卷式膨胀机，其同时进行膨胀和再加热，从而实现有效的膨胀，并且在向涡旋式膨胀机供给工作流体期间发生的压力损失不会降低效率， 使得固定涡旋构件和旋转涡旋构件之间的温度差最小化以及涡卷的温度分布。 本发明还涉及一种热交换系统，其使用涡旋式膨胀机来代替常规的往复式斯特林发动机或冰箱中的活塞与一对涡旋式压缩机和膨胀机，使得热交换系统可用作斯特林 发动机或冰箱。 本发明还提供一种蒸汽发动机，其中常规蒸汽发动机（兰金系统）中的蒸汽轮机被涡旋式膨胀机代替，使得蒸汽循环具有再加热循环和再生循环。

公开(公告)号：US06685386B1

公开(公告)日：2004-02-03

申请号：US09573278

申请日：2000-05-18

申请人： Jang Hee Lee

发明人： Jang Hee Lee

IPC分类号： E01C102

CPC分类号： E01C1/04

摘要： An intersection system which can do without, or drastically minimize, the frequency of having to wait for traffic signals in order to relieve traffic of congestion and minimize the land occupied by an intersection system. System 1 consists of two mutually intersecting roads, main road 1 and main road 2, each including a diverging section for cars making a left or right turn and a converging section for convergence of cars heading in the same direction after having taken their respective left or right turns; System 2, which has a ring-shaped road on the upper and the lower level each at the central section of an intersection, and half-main-roads and entries being connected on the outer circumferences of these ring-shaped roads; and System 3, which has a plate-shaped road for right and left turns on an upper and lower level at the central section of an intersection, the plate-shaped roads having half-main-roads and entrance roads built on the edges, and a minimum number of traffic lights, unavoidably, set up on said plate-shaped roads or each entrance road for the benefit of cars advancing from all directions.

摘要翻译： 一个交叉路口系统可以不需要或大幅度地减少必须等待交通信号的频率，以减轻交通拥堵的流量，并最大限度地减少交叉口系统所占用的面积。 系统1包括两条相互交叉的道路，主路1和主路2，每条道路包括一个用于制造左转或右转的汽车的发散部分，以及用于收集在相同方向后驶向的轿厢的会聚部分， 右转 系统2在交叉路口的中央部分上下各有一个环形道路，半主干道和入口连接在这些环形道路的外圆周上; 并且在交叉路口的中央部分具有左右板状道路的系统3在上下两侧，板状道路具有建立在边缘上的半主干道和入口道路，以及 不可避免地，在所述板状道路或每个入口道路上设置最少数量的交通灯，以便从各个方向前进的汽车的利益。