公开(公告)号：US5594933A

公开(公告)日：1997-01-14

申请号：US497716

申请日：1995-06-30

申请人： Kazuhiko Hayashi ,  Hidefumi Yamamoto ,  Junichi Fujikata ,  Kunihiko Ishihara

发明人： Kazuhiko Hayashi ,  Hidefumi Yamamoto ,  Junichi Fujikata ,  Kunihiko Ishihara

IPC分类号： C22C5/00 ,  G11B5/39 ,  H01F10/00 ,  H01F10/16 ,  H01F41/32 ,  H01L43/10 ,  H01F10/12

CPC分类号： B82Y25/00 ,  G11B5/3903 ,  H01F10/007 ,  H01L43/10 ,  Y10S428/928 ,  Y10T428/1107 ,  Y10T428/12014 ,  Y10T428/12028 ,  Y10T428/12063 ,  Y10T428/12465

摘要： The invention relates to a magnetoresistance material, i.e. a conductive material that exhibits magnetoresistance, which is an inhomogeneous system consisting of a nonmagnetic matrix and ultrafine particles of a ferromagnetic material such as Co or Ni--Fe--Co dispersed in the nonmagnetic matrix. With the aim of reducing deterioration of the magnetoresistance effect, an alloy or mixture of at least two metal elements selected from Cu, Ag, Au and Pt is used as the material of the nonmagnetic matrix. Optionally, the nonmagnetic matrix may contain a limited quantity of a supplementary element selected from Al, Cr, In, Mn, Mo, Nb, Pd, Ta, Ti, W, V, Zr and Ir. A film of the magnetoresistance material can be formed on a substrate, and it is optional to interpose a buffer layer between the film and the substrate and/or cover the film with a protective layer.

摘要翻译： 本发明涉及一种磁阻材料，即具有磁阻的导电材料，其是由非磁性基体和分散在非磁性基质中的诸如Co或Ni-Fe-Co的铁磁材料的超微粒子组成的不均匀系统。 为了减少磁阻效应的劣化，使用选自Cu，Ag，Au和Pt中的至少两种金属元素的合金或混合物作为非磁性基体的材料。 可选地，非磁性矩阵可以包含有限量的选自Al，Cr，In，Mn，Mo，Nb，Pd，Ta，Ti，W，V，Zr和Ir的补充元素。 可以在衬底上形成磁阻材料的膜，并且可选地在膜和衬底之间设置缓冲层和/或用保护层覆盖膜。

公开(公告)号：US08853812B2

公开(公告)日：2014-10-07

申请号：US13810360

申请日：2011-06-15

申请人： Daisuke Okamoto ,  Junichi Fujikata

发明人： Daisuke Okamoto ,  Junichi Fujikata

IPC分类号： H01L31/036 ,  H01L31/105 ,  H01L21/205 ,  H01L31/103 ,  G02F1/00 ,  G02B6/12 ,  G02B6/42

CPC分类号： G02B6/12004 ,  G02B6/4214 ,  G02B6/4246 ,  G02F1/00 ,  H01L31/1035 ,  H01L31/105 ,  H01L31/1085

摘要： The present invention provides a photodetector which solves the problem of low sensitivity of a photodetector, an optical communication device equipped with the same, and a method for making the photodetector, and a method for making the optical communication device. The photodetector includes a substrate, a lower cladding layer arranged on the substrate, an optical waveguide arranged on the lower cladding layer, an intermediate layer arranged on the optical waveguide, a optical absorption layer arranged on the intermediate layer, a pair of electrodes arranged on the optical absorption layer, and wherein the optical absorption layer includes a IV-group or III-V-group single-crystal semiconductor, and the optical absorption layer absorbs an optical signal propagating through the optical waveguide.

摘要翻译： 本发明提供了一种解决光电检测器的灵敏度低的问题的光检测器，配备该光检测器的光通信装置及其制造方法，以及制造该光通信装置的方法。 该光检测器包括基板，布置在基板上的下包覆层，布置在下包层上的光波导，布置在光波导上的中间层，布置在中间层上的光吸收层，一对电极， 所述光吸收层，其中所述光吸收层包括IV族或III-V族单晶半导体，并且所述光吸收层吸收通过所述光波导传播的光信号。

公开(公告)号：US20130064491A1

公开(公告)日：2013-03-14

申请号：US13582841

申请日：2011-03-01

申请人： Junichi Fujikata ,  Motofumi Saitoh ,  Jun Ushida ,  Akio Toda

发明人： Junichi Fujikata ,  Motofumi Saitoh ,  Jun Ushida ,  Akio Toda

IPC分类号： G02F1/035 ,  H01L21/02

CPC分类号： G02F1/035 ,  G02F1/025 ,  H01L21/02

摘要： To provide an optical modulator having a reduced size and reduced power consumption and capable of being easily connected to a waveguide and a method of manufacturing the optical modulator. The optical modulator has at least semiconductor layer (8) having a rib-shaped portion and doped so as to be of a first conduction type, dielectric layer (11) laid on first-conduction-type semiconductor layer (8), and semiconductor layer (9) laid on dielectric layer (11), having the width at the side opposite from dielectric layer (11) increased relative to the width of the rib-shaped portion, and doped so as to be of a second conduction type.

摘要翻译： 提供具有减小的尺寸和降低的功率消耗并且能够容易地连接到波导的光学调制器和制造光学调制器的方法。 光调制器至少具有肋状部分并掺杂成第一导电类型的半导体层（8），布置在第一导电型半导体层（8）上的电介质层（11）和半导体层 放置在电介质层（11）上的与介电层（11）相对的宽度相对于肋状部分的宽度增加并且掺杂成第二导电类型的放电层（9）。

公开(公告)号：US08363989B2

公开(公告)日：2013-01-29

申请号：US12919461

申请日：2009-02-10

申请人： Daisuke Okamoto ,  Kenichi Nishi ,  Junichi Fujikata ,  Jun Ushida

发明人： Daisuke Okamoto ,  Kenichi Nishi ,  Junichi Fujikata ,  Jun Ushida

IPC分类号： G02B6/12 ,  H01L21/02

CPC分类号： H01L25/0657 ,  H01L23/48 ,  H01L23/645 ,  H01L24/13 ,  H01L24/16 ,  H01L24/48 ,  H01L25/167 ,  H01L2224/13099 ,  H01L2224/16145 ,  H01L2224/48095 ,  H01L2224/48227 ,  H01L2224/73207 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06531 ,  H01L2225/06534 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01023 ,  H01L2924/01033 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/30105 ,  H01L2924/30107 ,  Y10T29/41 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： Provided is a semiconductor optical interconnection device capable of transmitting signals between laminated semiconductor chips in a structure where semiconductor chips highly functionalized by being bonded to an optical interconnection chip are laminated. The semiconductor optical interconnection device includes a semiconductor chip 1 and an optical interconnection chip 2. The optical interconnection chip 2 includes an optical element formed thereon (for instance, a photo-sensitive element, a luminous element, or an optical modulator) which has a function relating to signal conversion between light and electricity. The semiconductor chip 1 includes a transmission section 3 (for instance, a coil or an inductor) to transmit signals in a non-contact manner, and a connection section 4 (for instance, a bump) to electrically connect with the optical element.

摘要翻译： 提供一种半导体光互连装置，其能够在层叠半导体芯片之间的层叠半导体芯片之间传输信号，其结构是通过层叠了通过结合到光互连芯片而被高度功能化的半导体芯片。 半导体光互连装置包括半导体芯片1和光互连芯片2.光互连芯片2包括形成在其上的光学元件（例如，光敏元件，发光元件或光调制器），其具有 功能与光和电之间的信号转换有关。 半导体芯片1包括以非接触方式传输信号的传输部分3（例如，线圈或电感器）以及与光学元件电连接的连接部分4（例如，凸块）。

公开(公告)号：US20110110628A1

公开(公告)日：2011-05-12

申请号：US13003792

申请日：2009-06-23

申请人： Daisuke Okamoto ,  Junichi Fujikata

发明人： Daisuke Okamoto ,  Junichi Fujikata

IPC分类号： G02B6/34 ,  H01L31/02

CPC分类号： H01L31/1085 ,  H01L31/02325

摘要： Provided is a high-speed and highly efficient semiconductor light-receiving element with small dependence on an incident light polarization direction. A semiconductor light-receiving element according to one aspect of the present invention includes a semiconductor layer including a light-absorbing layer 4, an MSM electrode 1 that is provided over the semiconductor layer, forms a Schottky junction with the semiconductor layer, and includes a slit-like opening, an anti-reflective film 2 formed over the semiconductor layer and the MSM electrode 1, and a Bragg reflection multilayer film 6 provided to a lower part of the semiconductor layer. The MSM electrode 1 includes a period capable of exciting surface plasmon to incident light of TM polarization, and obtains sufficient transmittance to the incident light of TE polarization.

摘要翻译： 提供了一种对入射光偏振方向具有小依赖性的高速高效半导体光接收元件。 根据本发明的一个方面的半导体光接收元件包括：半导体层，包括光吸收层4，设置在半导体层上的MSM电极1，与半导体层形成肖特基结，并且包括： 形成在半导体层上的抗反射膜2和MSM电极1，以及设置在半导体层的下部的布拉格反射多层膜6。 MSM电极1包括能够激发表面等离子体激发到TM偏振的入射光的时段，并且对TE偏振的入射光获得足够的透射率。

公开(公告)号：US20100320496A1

公开(公告)日：2010-12-23

申请号：US12919546

申请日：2009-02-26

申请人： Kenichi Nishi ,  Junichi Fujikata ,  Jun Ushida ,  Daisuke Okamoto

发明人： Kenichi Nishi ,  Junichi Fujikata ,  Jun Ushida ,  Daisuke Okamoto

IPC分类号： H01L33/62

CPC分类号： G02B6/12002 ,  G02B6/43 ,  H01L21/76898 ,  H01L23/481 ,  H01L2224/05 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/08145 ,  H01L2224/80001 ,  H01L2224/80357 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2224/05552

摘要： A semiconductor device comprises a semiconductor layer having a semiconductor integrated circuit, which is for processing an electrical signal, on a semiconductor substrate and an optical interconnect layer for transmitting an optical signal are joined. Control of modulation of the optical signal transmitted in the optical interconnect layer is performed by an electrical signal from the semiconductor layer, and an electrical signal generated by reception of light in the optical interconnect layer is transmitted to the semiconductor layer. The optical interconnect layer is disposed on the underside of the semiconductor substrate.

摘要翻译： 半导体器件包括具有用于处理电信号的半导体集成电路的半导体层，半导体衬底和用于发射光信号的光互连层的半导体层。 通过来自半导体层的电信号执行在光学互连层中发送的光信号的调制的控制，并且通过在光学互连层中的光的接收而产生的电信号被传输到半导体层。 光学互连层设置在半导体衬底的下侧。

公开(公告)号：US07728366B2

公开(公告)日：2010-06-01

申请号：US10599609

申请日：2005-04-05

申请人： Keishi Oohashi ,  Tsutomu Ishi ,  Toshio Baba ,  Junichi Fujikata ,  Kikuo Makita

发明人： Keishi Oohashi ,  Tsutomu Ishi ,  Toshio Baba ,  Junichi Fujikata ,  Kikuo Makita

IPC分类号： H01L31/113

CPC分类号： H01L31/022408 ,  H01L31/108

摘要： A Schottky photodiode includes a semiconductor layer and a conductive film provided in contact with the semiconductor layer. The conductive film has an aperture and a periodic structure provided around said aperture for producing a resonant state by an excited surface plasmon in a film surface of the conductive film by means of the incident light to the film surface. The photodiode detects near-field light that is generated by at the interface between the conductive film and semiconductor layer the excited surface plasmon. The aperture has a diameter smaller than the wavelength of the incident light.

摘要翻译： 肖特基光电二极管包括与半导体层接触设置的半导体层和导电膜。 导电膜具有围绕所述孔设置的孔和周期性结构，用于通过入射到膜表面的导电膜的膜表面中的激发表面等离子体产生共振状态。 光电二极管检测由激发的表面等离子体激元在导电膜和半导体层之间的界面处产生的近场光。 孔径的直径小于入射光的波长。

公开(公告)号：US07161774B2

公开(公告)日：2007-01-09

申请号：US11376290

申请日：2006-03-16

申请人： Kazuhiko Hayashi ,  Junichi Fujikata ,  Tsutomu Ishi ,  Shigeru Mori ,  Keishi Ohashi ,  Masafumi Nakada ,  Kiyokazu Nagahara ,  Kunihiko Ishihara ,  Nobuyuki Ishiwata

发明人： Kazuhiko Hayashi ,  Junichi Fujikata ,  Tsutomu Ishi ,  Shigeru Mori ,  Keishi Ohashi ,  Masafumi Nakada ,  Kiyokazu Nagahara ,  Kunihiko Ishihara ,  Nobuyuki Ishiwata

IPC分类号： G11B5/39

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R31/3171 ,  G01R33/093 ,  G11B5/00 ,  G11B5/39 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3932 ,  G11B5/3967 ,  H01F10/3268

摘要： A magneto-resistance effect head is provided with a lower conductive layer which is provided with a recessed portion, and a vertical bias layer is provided in the recessed portion. A free layer is provided on the lower conductive layer. On the free layer, layered in the following order are the non-magnetic layer, the fixed layer, the fixing layer, and the upper layer so as not to be placed immediately above the vertical bias layer. The non-magnetic layer, the fixed layer, the fixing layer, and the upper layer are buried in an insulation layer. Furthermore, an upper conductive layer is provided on the upper layer and the insulation layer. In the direction of the magnetic field applied by the vertical bias layer, the free layer is made greater in length than the fixed layer and the free layer is disposed in proximity to the vertical bias layer with the distance between the fixed layer and the vertical bias layer remaining unchanged.

公开(公告)号：US06999287B2

公开(公告)日：2006-02-14

申请号：US10803144

申请日：2004-03-18

申请人： Kazuhiko Hayashi ,  Junichi Fujikata ,  Tsutomu Ishi ,  Shigeru Mori ,  Keishi Ohashi ,  Masafumi Nakada ,  Kiyokazu Nagahara ,  Kunihiko Ishihara ,  Nobuyuki Ishiwata

发明人： Kazuhiko Hayashi ,  Junichi Fujikata ,  Tsutomu Ishi ,  Shigeru Mori ,  Keishi Ohashi ,  Masafumi Nakada ,  Kiyokazu Nagahara ,  Kunihiko Ishihara ,  Nobuyuki Ishiwata

IPC分类号： G11B5/39

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R31/3171 ,  G01R33/093 ,  G11B5/00 ,  G11B5/39 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3932 ,  G11B5/3967 ,  H01F10/3268

摘要： A magneto-resistance effect head is provided with a lower conductive layer which is provided with a recessed portion, and a vertical bias layer is provided in the recessed portion. A free layer is provided on the lower conductive layer. On the free layer, layered in the following order are the non-magnetic layer, the fixed layer, the fixing layer, and the upper layer so as not to be placed immediately above the vertical bias layer. The non-magnetic layer, the fixed layer, the fixing layer, and the upper layer are buried in an insulation layer. Furthermore, an upper conductive layer is provided on the upper layer and the insulation layer. In the direction of the magnetic field applied by the vertical bias layer, the free layer is made greater in length than the fixed layer and the free layer is disposed in proximity to the vertical bias layer with the distance between the fixed layer and the vertical bias layer remaining unchanged.

公开(公告)号：US06934132B2

公开(公告)日：2005-08-23

申请号：US09916529

申请日：2001-07-30

申请人： Kazuhiko Hayashi ,  Junichi Fujikata ,  Tsutomu Ishi ,  Shigeru Mori ,  Keishi Ohashi ,  Masafumi Nakada ,  Kiyokazu Nagahara ,  Kunihiko Ishihara ,  Nobuyuki Ishiwata

发明人： Kazuhiko Hayashi ,  Junichi Fujikata ,  Tsutomu Ishi ,  Shigeru Mori ,  Keishi Ohashi ,  Masafumi Nakada ,  Kiyokazu Nagahara ,  Kunihiko Ishihara ,  Nobuyuki Ishiwata

IPC分类号： G01R31/317 ,  G01R33/09 ,  G11B5/00 ,  G11B5/39 ,  H01F10/32

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R31/3171 ,  G01R33/093 ,  G11B5/00 ,  G11B5/39 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3932 ,  G11B5/3967 ,  H01F10/3268

摘要： A magneto-resistance effect head is provided with a lower conductive layer which is provided with a recessed portion, and a vertical bias layer is provided in the recessed portion. A free layer is provided on the lower conductive layer. On the free layer, layered in the following order are the non-magnetic layer, the fixed layer, the fixing layer, and the upper layer so as not to be placed inmediately above the vertical bias layer. The non-magnetic layer, the fixed layer, the fixing layer, and the upper layer are buried in an insulation layer. Furthermore, an upper conductive layer is provided on the upper layer and the insulation layer. In the direction of the magnetic field applied by the vertical bias layer, the free layer is made greater in length than the fixed layer and the free layer is disposed in proximity to the vertical bias layer with the distance between the fixed layer and the vertical bias layer remaining unchanged.

摘要翻译： 磁阻效应头设置有设置有凹部的下导电层，在凹部设置有垂直偏置层。 在下导电层上提供自由层。 在自由层上，按照以下顺序层叠非磁性层，固定层，固定层和上层，以便不立即放置在垂直偏置层上方。 非磁性层，固定层，固定层和上层被埋在绝缘层中。 此外，在上层和绝缘层上设置有上导电层。 在由垂直偏置层施加的磁场的方向上，自由层的长度比固定层长，并且自由层设置在垂直偏置层附近，固定层和垂直偏置之间的距离 层保持不变。