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41.发明申请公开(公告)号：US20140230634A1
公开(公告)日：2014-08-21
申请号：US14346401
申请日：2012-09-21
Inventor： Asami Nakai
IPC: D07B1/02
CPC classification number: D07B1/02 , C08J5/047 , C08J5/24 , D04C1/06 , D07B2201/1096 , D10B2403/02411 , D10B2505/02
Abstract: A reinforced fiber/resin fiber composite is provided in which the ratio and arrangement of a long fiber and a thermoplastic resin fiber included in an intermediate material are accurately controlled to simultaneously provide good impregnation characteristics of the long fiber and good interfacial characteristics between the long fiber and the thermoplastic resin. A reinforced fiber/resin fiber composite (50) is provided which is an intermediate material for a long-fiber reinforced thermoplastic resin structure. The reinforced fiber (15) is a long fiber extending in a longitudinal direction. The resin fiber (25) includes at least two thermoplastic resin fibers. The at least two thermoplastic resin fibers are arranged around the reinforced fiber (15) to surround the reinforced fiber (15).
Abstract translation: 提供了一种增强纤维/树脂纤维复合材料，其中包括在中间材料中的长纤维和热塑性树脂纤维的比例和布置被精确地控制，以同时提供长纤维的良好浸渍特性和长纤维之间良好的界面特性 和热塑性树脂。 提供了一种用于长纤维增强热塑性树脂结构的中间材料的增强纤维/树脂纤维复合材料（50）。 增强纤维（15）是沿长度方向延伸的长纤维。 树脂纤维（25）包括至少两种热塑性树脂纤维。 所述至少两个热塑性树脂纤维布置在所述增强纤维（15）周围以围绕所述增强纤维（15）。
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42.发明公开公开(公告)号：US20240271359A1
公开(公告)日：2024-08-15
申请号：US18565952
申请日：2022-06-01
Inventor： Shoji IZAWA , Satoko OKUBAYASHI , Mehany Mohamed lbrahim Ghanayem HEBA
IPC: D06L1/04 , D06M10/00 , D06M10/06 , D06M101/06
CPC classification number: D06L1/04 , D06M10/005 , D06M10/06 , D06M2101/06
Abstract: An object of the present invention to realize a step of producing an environmentally friendly textile product using a solvent in place of conventionally used water or an organic solvent in a textile product scouring step. A method according to one aspect of the present invention includes a step (a) of bringing a fluid containing supercritical carbon dioxide into contact with the textile product to remove part or all substances adhered to a surface of the textile product.
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公开(公告)号：US11802348B2
公开(公告)日：2023-10-31
申请号：US16448099
申请日：2019-06-21
Applicant: Murata Manufacturing Co., Ltd. , NATIONAL UNIVERSITY CORPORATION KYOTO INSTITUTE OF TECHNOLOGY
Inventor： Yasushi Yoshida , Tatsuya Fukutani , Tatsuo Kunishi , Masahiko Minoda , Ryota Mori
IPC: H01G4/12 , C25D5/00 , C04B41/85 , C04B41/91 , C09D163/00 , C25D5/02 , H01G4/224 , H01G4/232 , H01G4/30 , H01G13/00 , C25D5/12 , B05D3/10 , B05D1/18 , B05D5/12
CPC classification number: C25D5/627 , C04B41/85 , C04B41/91 , C09D163/00 , C25D5/022 , C25D5/12 , H01G4/12 , H01G4/224 , H01G4/232 , H01G4/30 , H01G13/00 , B05D1/18 , B05D3/10 , B05D5/12
Abstract: An element body has an exposed surface including a selective surface material which is to be coated with the coating material and a non-selected surface material which is not to be coated with the coating material. The selected surface material has different material properties than the non-selected surface material. The element body is coated with the coating material by applying a surface modifier only on the surface of the selected surface material and thereafter coating the surface of the selected surface material to which the surface modifier has been applied with the coating material.
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公开(公告)号：US11699600B2
公开(公告)日：2023-07-11
申请号：US17522067
申请日：2021-11-09
Applicant: DENSO CORPORATION , TOYOTA JIDOSHA KABUSHIKI KAISHA , MIRISE Technologies Corporation , National University Corporation Kyoto Institute of Technology
Inventor： Tatsuji Nagaoka , Hiroki Miyake , Hiroyuki Nishinaka , Yuki Kajita , Masahiro Yoshimoto
IPC: H01L21/67 , H01L21/02 , H01L21/306
CPC classification number: H01L21/67023 , H01L21/02623 , H01L21/30604
Abstract: A wafer processing apparatus is configured to process a wafer by supplying mist to a surface of the wafer. The wafer processing apparatus includes a furnace in which the wafer is disposed, a gas supplying device configured to supply gas into the furnace, a mist supplying device configured to supply the mist into the furnace, and a controller. The controller is configured to execute a processing step by controlling the gas supplying device and the mist supplying device to supply the gas and the mist into the furnace, respectively. The controller is further configured to control the mist supplying device to stop supplying the mist into the furnace while controlling the gas supplying device to keep supplying the gas into the furnace when the processing step ends.
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公开(公告)号：US20230203662A1
公开(公告)日：2023-06-29
申请号：US18065740
申请日：2022-12-14
Applicant: DENSO CORPORATION , TOYOTA JIDOSHA KABUSHIKI KAISHA , MIRISE Technologies Corporation , National University Corporation Kyoto Institute of Technology
Inventor： TATSUJI NAGAOKA , HIROYUKI NISHINAKA , MASAHIRO YOSHIMOTO
IPC: C23C16/54 , C23C16/52 , C23C16/44 , C23C16/448 , C23C16/48
CPC classification number: C23C16/54 , C23C16/52 , C23C16/4412 , C23C16/4481 , C23C16/4486 , C23C16/481
Abstract: A film formation apparatus includes a stage for having a substrate thereon; a mist generation source that generates a mist of a solution containing at least water and in which a material for forming a film on the substrate is dissolved; a supply path that conveys the mist toward the substrate on the stage by a flow of a carrier gas; and a heater that heats at least a part of the supply path. The part of the supply path heated by the heater is provided as a mist heating section in which infrared rays are radiated from an inner surface of the supply path toward the mist. The inner surface of the supply path in the mist heating section is coated with a coating layer containing at least one of an oxide and a hydroxide of an element present in the mist.
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Patent Agency Ranking
公开(公告)号：US20220205135A1
公开(公告)日：2022-06-30
申请号：US17537697
申请日：2021-11-30
Applicant: DENSO CORPORATION , TOYOTA JIDOSHA KABUSHIKI KAISHA , MIRISE Technologies Corporation , National University Corporation Kyoto Institute of Technology
Inventor： TATSUJI NAGAOKA , HIROYUKI NISHINAKA , MASAHIRO YOSHIMOTO
Abstract: A method for producing a product including an oxide film of a second metal that is doped with a first metal includes generating a mist from a raw material solution in which both the first metal and the second metal are dissolved, and supplying the mist to a surface of a substrate to form the oxide film on the surface of the substrate. A pH of the raw material solution is less than 7.
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公开(公告)号：US20220181170A1
公开(公告)日：2022-06-09
申请号：US17522067
申请日：2021-11-09
Applicant: DENSO CORPORATION , TOYOTA JIDOSHA KABUSHIKI KAISHA , MIRISE Technologies Corporation , National University Corporation Kyoto Institute of Technology
Inventor： Tatsuji NAGAOKA , Hiroki MIYAKE , Hiroyuki NISHINAKA , Yuki KAJITA , Masahiro YOSHIMOTO
IPC: H01L21/67 , H01L21/306 , H01L21/02
Abstract: A wafer processing apparatus is configured to process a wafer by supplying mist to a surface of the wafer. The wafer processing apparatus includes a furnace in which the wafer is disposed, a gas supplying device configured to supply gas into the furnace, a mist supplying device configured to supply the mist into the furnace, and a controller. The controller is configured to execute a processing step by controlling the gas supplying device and the mist supplying device to supply the gas and the mist into the furnace, respectively. The controller is further configured to control the mist supplying device to stop supplying the mist into the furnace while controlling the gas supplying device to keep supplying the gas into the furnace when the processing step ends.
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公开(公告)号：US20220157598A1
公开(公告)日：2022-05-19
申请号：US17591002
申请日：2022-02-02
Inventor： Tatsuji NAGAOKA , Hiroyuki NISHINAKA , Masahiro YOSHIMOTO , Daisuke TAHARA
IPC: H01L21/02
Abstract: A method for forming a semi-conductive or conductive oxide film is provided. The oxide film is doped with a bismuth and made of an indium oxide, an aluminum oxide, a gallium oxide, an oxide including the gallium oxide, or an oxide of a combination thereof. The method includes supplying a mist of a solution to a surface of the substrate while heating the substrate. An oxide film material and a bismuth compound being dissolved in the solution. The bismuth compound is selected from the group consisting of bismuth ethoxide, bismuth acetate oxide, bismuth acetate, bismuth nitrate pentahydrate, bismuth nitrate, bismuth oxynitrate, bismuth 2-ethylhexanoate, bismuth octanoate, bismuth naphthenate, bismuth subgallate, bismuth subsalicylate, bismuth chloride, bismuth oxychloride, bismuth citrate, bismuth oxyacetate, bismuth oxide perchlorate, bismuth oxysalicylate, bismuth bromide, bismuth iodide, bismuth hydroxide, bismuth oxycarbonate, bismuth sulfide, bismuth sulfate, bismuth carbonate, and bismuth oxide.
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公开(公告)号：US11285458B2
公开(公告)日：2022-03-29
申请号：US14903699
申请日：2014-07-08
Inventor： Tohru Ikegami , Yusuke Kawachi , Akihiro Kunisawa
IPC: C08F292/00 , B01J20/286 , C08F20/60 , C08F20/54 , B01J20/289 , B01J20/32 , B01D15/30 , C08F220/58 , C08F220/60
Abstract: A separating medium for hydrophilic interaction chromatography useful in separating hydrophilic compounds. The hydrophilic interaction chromatography separating medium, which is formed from a support and a ligand carried by the support, is a separating medium wherein the ligand is a (meth)acrylic polymer having a constituent unit derived from the compound indicated by formula (I).
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公开(公告)号：US11077711B2
公开(公告)日：2021-08-03
申请号：US15571257
申请日：2016-04-22
Applicant: The Yokohama Rubber Co., LTD. , National University Corporation Kyoto Institute Of Technology
Inventor： Wataru Sakai , Takuma Arikawa , Ryosuke Sakai , Yu Shinke , Yuko Sekine , Fumito Yatsuyanagi
Abstract: A rubber composition of the present technology is a rubber composition including a diene rubber and a filler; the diene rubber containing at least a styrene-butadiene copolymer; a radical generation index of the styrene-butadiene copolymer being not greater than 1.0 and being smaller than a value Y calculated by Equation (1): Y=−0.0186×(SV mass %+vinyl unit mol %)+1.5.
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