公开(公告)号：US20120146196A1

公开(公告)日：2012-06-14

申请号：US13230973

申请日：2011-09-13

Applicant: Kee-Jeung LEE ,  Kwon Hong ,  Kyung-Woong Park ,  Ji-Hoon Ahn

Inventor： Kee-Jeung LEE ,  Kwon Hong ,  Kyung-Woong Park ,  Ji-Hoon Ahn

IPC: H01L29/02 ,  H01L21/328 ,  H01L21/314

CPC classification number: H01L21/02263 ,  C23C16/045 ,  C23C16/45529 ,  C23C16/45531 ,  C23C16/56 ,  H01L21/02148 ,  H01L21/02159 ,  H01L21/02161 ,  H01L21/02181 ,  H01L21/02189 ,  H01L21/02194 ,  H01L21/022 ,  H01L21/0228 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/02356 ,  H01L27/1085 ,  H01L28/40

Abstract: A semiconductor device includes a dielectric layer in which zirconium, hafnium, and a IV group element are mixed. A method for fabricating a capacitor includes forming a bottom electrode, forming the dielectric layer and forming a top electrode over the dielectric layer.

Abstract translation: 半导体器件包括其中混合有锆，铪和IV族元素的电介质层。 制造电容器的方法包括形成底电极，形成电介质层并在电介质层上形成顶电极。

公开(公告)号：US20120126308A1

公开(公告)日：2012-05-24

申请号：US13298591

申请日：2011-11-17

Applicant: Beom Yong KIM ,  Kwon HONG ,  Kee Jeung LEE ,  Ki Hong LEE

Inventor： Beom Yong KIM ,  Kwon HONG ,  Kee Jeung LEE ,  Ki Hong LEE

IPC: H01L29/792 ,  H01L21/336

CPC classification number: H01L27/11524 ,  G11C16/14 ,  G11C16/28 ,  H01L27/11556 ,  H01L27/1157 ,  H01L27/11582

Abstract: A non-volatile memory device includes a plurality of memory cells stacked along a channel protruded from a substrate, a first select transistor connected to one end of the plurality of memory cells, a first interlayer dielectric layer for being coupled between a source line and the first select transistor, and a second interlayer dielectric layer disposed between the first select transistor and the one end of the plurality of memory cells, and configured to include a first recess region.

Abstract translation: 非易失性存储器件包括沿着从衬底突出的通道堆叠的多个存储器单元，连接到多个存储器单元的一端的第一选择晶体管，用于耦合在源极线与源极之间的第一层间电介质层 第一选择晶体管和设置在第一选择晶体管和多个存储单元的一端之间的第二层间电介质层，并且被配置为包括第一凹部区域。

公开(公告)号：US20120091434A1

公开(公告)日：2012-04-19

申请号：US13222732

申请日：2011-08-31

Applicant: Hyun-kwon HONG ,  Sang-don Lee ,  Kwang-min Song ,  Kee-won Lee

Inventor： Hyun-kwon HONG ,  Sang-don Lee ,  Kwang-min Song ,  Kee-won Lee

IPC: H01L33/06

CPC classification number: H01L33/14 ,  H01L33/20 ,  H01L33/38 ,  H01L33/405

Abstract: A vertical light-emitting device includes: a substrate; a first electrode disposed on a bottom surface of the substrate; a reflection layer disposed on a top surface of the substrate; a current spreading layer disposed on the reflection layer and comprising a groove having a width narrower toward a top portion thereof; a light generation layer disposed on the current spreading layer; and a second electrode disposed on the light generation layer.

Abstract translation: 垂直发光装置包括：基板; 设置在所述基板的底面上的第一电极; 反射层，设置在所述基板的顶表面上; 电流扩散层，其设置在所述反射层上，并且包括宽度朝向其顶部变窄的凹槽; 设置在电流扩散层上的发光层; 以及设置在光产生层上的第二电极。

公开(公告)号：US08135417B2

公开(公告)日：2012-03-13

申请号：US12217570

申请日：2008-07-07

Applicant: Cheng Shan ,  Hyeon-Woo Lee ,  Sung-Kwon Hong ,  Do-Young Kim ,  Eun-Taek Lim ,  Jung-Soo Woo ,  Deok-Ki Kim ,  Geun-Ho Lee ,  Yong-Ho Park

Inventor： Cheng Shan ,  Hyeon-Woo Lee ,  Sung-Kwon Hong ,  Do-Young Kim ,  Eun-Taek Lim ,  Jung-Soo Woo ,  Deok-Ki Kim ,  Geun-Ho Lee ,  Yong-Ho Park

IPC: H04Q7/00

CPC classification number: G01S5/0205 ,  G01S5/0036 ,  G01S5/14 ,  H04W64/00 ,  H04W72/04

Abstract: A method and apparatus for estimating a geo-location of a terminal in a wireless communication system are provided. In a method of operating a terminal for providing geo-location information in a cognitive ratio (CR) system, the method includes obtaining first ranging information and transmitting a first ranging code to a base station (BS) in a network entry process; receiving an allocated second ranging resource from the BS; and transmitting a second ranging code.

Abstract translation: 提供了一种用于估计无线通信系统中的终端的地理位置的方法和装置。 在一种用于在认知比（CR）系统中提供地理位置信息的终端的操作方法中，所述方法包括在网络进入过程中获得第一测距信息并向基站发送第一测距码; 从所述BS接收分配的第二测距资源; 以及发送第二测距码。

公开(公告)号：US08092862B2

公开(公告)日：2012-01-10

申请号：US12895678

申请日：2010-09-30

Applicant: Deok Sin Kil ,  Kwon Hong ,  Seung Jin Yeom

Inventor： Deok Sin Kil ,  Kwon Hong ,  Seung Jin Yeom

IPC: C23C16/00

CPC classification number: C23C16/40 ,  C23C16/45529 ,  C23C16/45531 ,  H01L21/02178 ,  H01L21/02189 ,  H01L21/02194 ,  H01L21/0228 ,  H01L21/3141 ,  H01L21/31616 ,  H01L21/31641 ,  H01L27/10814 ,  H01L28/40

Abstract: Provided is a method for forming a dielectric film in a semiconductor device, wherein the method can improve a dielectric characteristic and a leakage current characteristic. According to specific embodiments of the present invention, the method for forming a dielectric film includes: forming a zirconium dioxide (ZrO2) layer over a wafer in a predetermined thickness that does not allow continuous formation of the ZrO2 layer; and forming an aluminum oxide (Al2O3) layer over portions of the wafer where the ZrO2 layer is not formed, in a predetermined thickness that does not allow continuous formation of the Al2O3 layer.

Abstract translation: 提供一种在半导体器件中形成电介质膜的方法，其中该方法可以改善介电特性和漏电流特性。 根据本发明的具体实施方案，形成电介质膜的方法包括：在不允许连续形成ZrO 2层的预定厚度的晶片上形成二氧化锆（ZrO 2）层; 并且在没有形成ZrO 2层的晶片的部分上形成氧化铝（Al 2 O 3）层，其厚度不能连续地形成Al 2 O 3层。

公开(公告)号：US07688926B2

公开(公告)日：2010-03-30

申请号：US11407799

申请日：2006-04-20

Applicant: Chang-Ho Suh ,  Young-Kwon Cho ,  Dong-Seek Park ,  Jung-Soo Woo ,  Sung-Kwon Hong

Inventor： Chang-Ho Suh ,  Young-Kwon Cho ,  Dong-Seek Park ,  Jung-Soo Woo ,  Sung-Kwon Hong

IPC: H04K1/10 ,  H04W4/00

CPC classification number: H04W16/32

Abstract: A frequency overlay communication system that includes a first communication system for performing communication using a first frequency band being a preset bandwidth; and a second communication system for performing communication using a second frequency band being a second preset bandwidth, wherein the second frequency band includes the first frequency band.

Abstract translation: 一种频率覆盖通信系统，包括：第一通信系统，用于使用作为预设带宽的第一频带进行通信; 以及第二通信系统，用于使用作为第二预设带宽的第二频带来执行通信，其中所述第二频带包括所述第一频带。

公开(公告)号：US20100062581A1

公开(公告)日：2010-03-11

申请号：US12432187

申请日：2009-04-29

Applicant: Jung-Woo PARK ,  Jin-Ki JUNG ,  Kwon HONG ,  Ki-Seon PARK

Inventor： Jung-Woo PARK ,  Jin-Ki JUNG ,  Kwon HONG ,  Ki-Seon PARK

IPC: H01L21/336 ,  H01L21/762

CPC classification number: H01L27/11519 ,  H01L27/11521

Abstract: Provided is a method of fabricating a non-volatile semiconductor device. The method includes: forming a first hard mask layer over a substrate; etching the first hard mask layer and the substrate to form a plurality of isolation trenches extending in parallel to one another in a first direction; burying a dielectric layer in the isolation trenches to form a isolation layer; forming a plurality of floating gate mask patterns extending in parallel to one another in a second direction intersecting with the first direction over a resulting structure where the isolation layer is formed; etching the first hard mask layer by using the floating gate mask patterns as an etch barrier to form a plurality of island-shaped floating gate electrode trenches; and burying a conductive layer in the floating gate electrode trenches to form a plurality of island-shaped floating gate electrodes.

Abstract translation: 提供了制造非易失性半导体器件的方法。 该方法包括：在衬底上形成第一硬掩模层; 蚀刻第一硬掩模层和衬底以形成在第一方向上彼此平行延伸的多个隔离沟槽; 在隔离沟槽中埋置介电层以形成隔离层; 在形成所述隔离层的结果上形成在与所述第一方向相交的第二方向上彼此平行延伸的多个浮置栅极掩模图案; 通过使用浮栅掩模图案作为蚀刻势垒来蚀刻第一硬掩模层，以形成多个岛状浮栅电极沟槽; 并在所述浮栅电极沟槽中埋设导电层以形成多个岛状浮栅。

公开(公告)号：US07608885B2

公开(公告)日：2009-10-27

申请号：US11751013

申请日：2007-05-19

Applicant: Kwon Hong ,  Eun Shil Park ,  Min Sik Jang

Inventor： Kwon Hong ,  Eun Shil Park ,  Min Sik Jang

IPC: H01L29/788

CPC classification number: H01L21/28273 ,  H01L29/513 ,  H01L29/7881

Abstract: A non-volatile memory device has a gate dielectric film formed between a floating gate and a control gate. The gate dielectric film is formed by forming an oxide film and a ZrO2/Al2O3/ZrO2 (ZAZ) film. Accordingly, the reliability of non-volatile memory devices can be improved while securing a high coupling ratio.

Abstract translation: 非易失性存储器件具有形成在浮置栅极和控制栅极之间的栅极电介质膜。 通过形成氧化膜和ZrO 2 / Al 2 O 3 / ZrO 2（ZAZ）膜来形成栅极电介质膜。 因此，可以在确保高耦合比的同时提高非易失性存储器件的可靠性。

公开(公告)号：US07592222B2

公开(公告)日：2009-09-22

申请号：US12147178

申请日：2008-06-26

Applicant: Eun Shil Park ,  Kwon Hong ,  Jae Hong Kim ,  Jae Hyoung Koo

Inventor： Eun Shil Park ,  Kwon Hong ,  Jae Hong Kim ,  Jae Hyoung Koo

IPC: H01L21/336

CPC classification number: H01L21/28273 ,  H01L27/11521

Abstract: The present invention relates to a method of fabricating a flash memory device. According to a method of fabricating a flash memory device in accordance with an aspect of the present invention, a semiconductor substrate over which a tunnel insulating layer and a first conductive layer are formed is provided. A first oxide layer is formed on the first conductive layer using a plasma oxidization process in a state where a back bias voltage is applied. A nitride layer is formed on the first oxide layer. A second oxide layer is formed on the nitride layer. A second conductive layer is formed on the second oxide layer.

Abstract translation: 本发明涉及一种制造闪速存储器件的方法。 根据本发明的一个方面的制造闪速存储器件的方法，提供了形成隧道绝缘层和第一导电层的半导体衬底。 在施加反向偏置电压的状态下，使用等离子体氧化工艺在第一导电层上形成第一氧化物层。 在第一氧化物层上形成氮化物层。 在氮化物层上形成第二氧化物层。 在第二氧化物层上形成第二导电层。

公开(公告)号：US20090175298A1

公开(公告)日：2009-07-09

申请号：US12399882

申请日：2009-03-06

Applicant: Young Woo YUN ,  Ki Jun KIM ,  Sung Lark KWON ,  Young Jo LEE ,  Sung Kwon HONG

Inventor： Young Woo YUN ,  Ki Jun KIM ,  Sung Lark KWON ,  Young Jo LEE ,  Sung Kwon HONG

IPC: H04J3/00

CPC classification number: H04L1/0071 ,  H03M13/11 ,  H03M13/271 ,  H03M13/2792 ,  H03M13/2903 ,  H03M13/2957 ,  H03M13/6362 ,  H03M13/6368 ,  H03M13/6375 ,  H03M13/6381 ,  H03M13/6508 ,  H04L1/0041 ,  H04L1/0066 ,  H04L1/0069 ,  H04L1/08 ,  H04W88/181

Abstract: A rate matching method is provided for a mobile communication system that performs an adjustment to a code rate based on an optimal level by puncturing or repetition to respective bit streams of transport channels. The rate matching method is preferably applicable to uplink and downlink rate matching for channel coding including turbo coding, convolutional coding and the like. The rate matching method for uplink can include executing coding for bits of a transport channel, and branching off the bits into a plurality of sequences, constructing a first interleaving pattern for the plurality of sequences, constructing a virtual interleaving pattern for at least one sequence based on a mapping rule with a corresponding first interleaving pattern and calculating different bit shifting values in each column of each virtual interleaving pattern. Then, a bit position to be punctured is determined in each constructed virtual interleaving pattern using the calculated bit shifting values.