公开(公告)号：US07186602B2

公开(公告)日：2007-03-06

申请号：US11041413

申请日：2005-01-25

申请人： Masayuki Jyumonji ,  Masakiyo Matsumura ,  Yoshinobu Kimura ,  Mikihiko Nishitani ,  Masato Hiramatsu ,  Yukio Taniguchi ,  Fumiki Nakano ,  Hiroyuki Ogawa

发明人： Masayuki Jyumonji ,  Masakiyo Matsumura ,  Yoshinobu Kimura ,  Mikihiko Nishitani ,  Masato Hiramatsu ,  Yukio Taniguchi ,  Fumiki Nakano ,  Hiroyuki Ogawa

IPC分类号： H01L21/84 ,  H01L21/324

CPC分类号： B23K26/04 ,  B23K26/066 ,  B23K26/067 ,  B23K26/073 ,  B23K26/705 ,  H01L21/02532 ,  H01L21/02678 ,  H01L21/02686 ,  H01L21/268 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78675

摘要： The semiconductor device according to the present invention has a semiconductor layer having not smaller than two types of crystal grains different in size within a semiconductor circuit on a same substrate.

摘要翻译： 根据本发明的半导体器件具有在相同基板上的半导体电路内具有不小于两种尺寸不同的晶粒的半导体层。

公开(公告)号：US20060284175A1

公开(公告)日：2006-12-21

申请号：US11509605

申请日：2006-08-25

申请人： Masato Hiramatsu ,  Yoshinobu Kimura ,  Hiroyuki Ogawa ,  Masayuki Jyumonji ,  Masakiyo Matsumura

发明人： Masato Hiramatsu ,  Yoshinobu Kimura ,  Hiroyuki Ogawa ,  Masayuki Jyumonji ,  Masakiyo Matsumura

IPC分类号： H01L31/00

CPC分类号： H01L21/0268 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02686 ,  H01L23/544 ,  H01L2223/5442 ,  H01L2223/54453 ,  H01L2924/0002 ,  Y10S438/975 ,  H01L2924/00

摘要： A thin-film semiconductor substrate includes an insulative substrate, an amorphous semiconductor thin film that is formed on the insulative substrate, and a plurality of alignment marks that are located on the semiconductor thin film and are indicative of reference positions for crystallization.

公开(公告)号：US20060275673A1

公开(公告)日：2006-12-07

申请号：US11276992

申请日：2006-03-20

申请人： Masayuki JYUMONJI

发明人： Masayuki JYUMONJI

IPC分类号： G03F1/00 ,  H01L21/00 ,  H01L21/84

CPC分类号： B23K26/066 ,  H01L21/02678 ,  H01L27/1285 ,  H01L27/1296 ,  Y10T117/1004

摘要： An object of the present invention is to provide a phase shifter for laser annealing which is capable of effectively preventing the sticking of particles. A first layer and a third layer are made of quartz glass, and a two-dimensional pattern of fine grooves is formed in the surfaces of the layers. The first layer and the third layer are arranged so that a second layer is sandwiched between the layers in a state in which the surfaces provided with the grooves face each other. A peripheral edge portion of the first layer is laminated on that of the third layer by a spacer. The second layer is made of an inactive gas introduced between the first layer and the third layer.

公开(公告)号：US07105419B2

公开(公告)日：2006-09-12

申请号：US10879165

申请日：2004-06-30

申请人： Masato Hiramatsu ,  Yoshinobu Kimura ,  Hiroyuki Ogawa ,  Masayuki Jyumonji ,  Masakiyo Matsumura

发明人： Masato Hiramatsu ,  Yoshinobu Kimura ,  Hiroyuki Ogawa ,  Masayuki Jyumonji ,  Masakiyo Matsumura

IPC分类号： H01L21/30 ,  H01L21/76 ,  H01L21/46

CPC分类号： H01L21/0268 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02686 ,  H01L23/544 ,  H01L2223/5442 ,  H01L2223/54453 ,  H01L2924/0002 ,  Y10S438/975 ,  H01L2924/00

摘要： A thin-film semiconductor substrate includes an insulative substrate, an amorphous semiconductor thin film that is formed on the insulative substrate, and a plurality of alignment marks that are located on the semiconductor thin film and are indicative of reference positions for crystallization.

公开(公告)号：US07101436B2

公开(公告)日：2006-09-05

申请号：US10603821

申请日：2003-06-26

申请人： Yukio Taniguchi ,  Masakiyo Matsumura ,  Hirotaka Yamaguchi ,  Mikihiko Nishitani ,  Susumu Tsujikawa ,  Yoshinobu Kimura ,  Masayuki Jyumonji

发明人： Yukio Taniguchi ,  Masakiyo Matsumura ,  Hirotaka Yamaguchi ,  Mikihiko Nishitani ,  Susumu Tsujikawa ,  Yoshinobu Kimura ,  Masayuki Jyumonji

IPC分类号： C30B29/16

CPC分类号： G03B21/56 ,  Y10T117/10 ,  Y10T117/1004 ,  Y10T117/1008 ,  Y10T117/1012

摘要： A crystallization apparatus includes an optical illumination system to illuminate a phase shift mask and which irradiates an amorphous semiconductor film with a light beam having an inverse peak type light intensity distribution including a minimum light intensity in a point corresponding to a phase shift portion of the phase shift mask to produce a crystallized semiconductor film. A wavefront dividing element is disposed on a light path between the optical illumination system and the phase shift mask. The wavefront dividing element wavefront-divides the light beam supplied from the optical illumination system into a plurality of light beams, and condenses the wavefront-divided light beams in the corresponding phase shift portion or in the vicinity of the portion.

摘要翻译： 结晶装置包括：光照射系统，用于照射相移掩模，并且对具有反相峰值型光强度分布的光束照射非晶半导体膜，所述光束具有相对于相的相移部分的点的最小光强度 移位掩模以产生结晶半导体膜。 波前分割元件设置在光学照明系统和相移掩模之间的光路上。 波前分割元件将从光学照明系统提供的光束前后分割为多个光束，并将波前划分的光束聚集在相应的相移部分或该部分附近。

公开(公告)号：US07087505B2

公开(公告)日：2006-08-08

申请号：US10755303

申请日：2004-01-13

申请人： Yoshinobu Kimura ,  Masakiyo Matsumura ,  Yoshitaka Yamamoto ,  Mikihiko Nishitani ,  Masato Hiramatsu ,  Masayuki Jyumonji ,  Fumiki Nakano

发明人： Yoshinobu Kimura ,  Masakiyo Matsumura ,  Yoshitaka Yamamoto ,  Mikihiko Nishitani ,  Masato Hiramatsu ,  Masayuki Jyumonji ,  Fumiki Nakano

IPC分类号： H01L21/20

CPC分类号： H01L21/02686 ,  H01L21/02532 ,  H01L21/2026 ,  H01L29/66757 ,  H01L29/78675

摘要： A method of manufacturing a thin-film semiconductor device substrate includes a step of forming a non-single crystalline semiconductor thin film on a base layer, and an annealing step of irradiating the non-single crystalline semiconductor thin film with an energy beam to enhance crystallinity of a non-single crystalline semiconductor constituting the non-single crystalline semiconductor thin film. The annealing step includes simultaneously irradiating the non-single crystalline semiconductor thin film with a plurality of energy beams to form a plurality of unit regions each including at least one irradiated region irradiated with the energy beam and at least one non-irradiated region that is not irradiated with the energy beam.

公开(公告)号：US20060124971A1

公开(公告)日：2006-06-15

申请号：US11335470

申请日：2006-01-20

申请人： Masato Hiramatsu ,  Yoshinobu Kimura ,  Hiroyuki Ogawa ,  Masayuki Jyumonji ,  Yoshitaka Yamamoto ,  Masakiyo Matsumura

发明人： Masato Hiramatsu ,  Yoshinobu Kimura ,  Hiroyuki Ogawa ,  Masayuki Jyumonji ,  Yoshitaka Yamamoto ,  Masakiyo Matsumura

IPC分类号： H01L29/768

CPC分类号： H01L29/78696 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78675

摘要： A semiconductor device includes a non-single-crystal semiconductor film, a support substrate that supports the non-single-crystal semiconductor film, and an active device having a part of the non-single-crystal semiconductor film as a channel region. In particular, the channel region has an oxygen concentration not higher than 1×1018 atoms/cm3 and a carbon concentration not higher than 1×1018 atoms/cm3.

摘要翻译： 半导体器件包括非单晶半导体膜，支撑非单晶半导体膜的支撑衬底和具有部分非单晶半导体膜作为沟道区的有源器件。 特别地，沟道区的氧浓度不高于1×10 18原子/ cm 3，碳浓度不高于1×10 18原子 / cm 3。

公开(公告)号：US20060065185A1

公开(公告)日：2006-03-30

申请号：US11224014

申请日：2005-09-13

申请人： Yukio Taniguchi ,  Masakiyo Matsumura ,  Hirotaka Yamaguchi ,  Mikihiko Nishitani ,  Susumu Tsujikawa ,  Yoshinobu Kimura ,  Masayuki Jyumonji

发明人： Yukio Taniguchi ,  Masakiyo Matsumura ,  Hirotaka Yamaguchi ,  Mikihiko Nishitani ,  Susumu Tsujikawa ,  Yoshinobu Kimura ,  Masayuki Jyumonji

IPC分类号： C30B23/00 ,  C30B28/12 ,  C30B28/14 ,  C30B25/00

CPC分类号： H01L29/78675 ,  B23K26/066 ,  B23K26/073 ,  B23K26/0734 ,  G02B5/02 ,  G02B5/3083 ,  G03F1/28 ,  G03F1/34 ,  H01L21/02532 ,  H01L21/02678 ,  H01L21/02686 ,  H01L27/1285 ,  H01L29/66757 ,  Y10T117/10

摘要： A crystallization apparatus includes an illumination system which applies illumination light for crystallization to a non-single-crystal semiconductor film, and a phase shifter which includes first and second regions disposed to form a straight boundary and transmitting the illumination light from the illumination system by a first phase retardation therebetween, and phase-modulates the illumination light to provide a light intensity distribution having an inverse peak pattern that light intensity falls in a zone of the non-single-crystal semiconductor film containing an axis corresponding to the boundary. The phase shifter further includes a small region which extends into at least one of the first and second regions from the boundary and transmits the illumination light by a second phase retardation with respect to the at least one of the first and second regions.

公开(公告)号：US20060033104A1

公开(公告)日：2006-02-16

申请号：US11197637

申请日：2005-08-05

申请人： Yoshiaki Nakazaki ,  Fumiki Nakano ,  Genshiro Kawachi ,  Terunori Warabisako ,  Masayuki Jyumonji ,  Hiroyuki Ogawa ,  Masato Hiramatsu ,  Tomoya Kato

发明人： Yoshiaki Nakazaki ,  Fumiki Nakano ,  Genshiro Kawachi ,  Terunori Warabisako ,  Masayuki Jyumonji ,  Hiroyuki Ogawa ,  Masato Hiramatsu ,  Tomoya Kato

IPC分类号： H01L29/04 ,  H01L29/76 ,  H01L27/12

CPC分类号： H01L21/02675 ,  B23K26/073 ,  G02F1/13454 ,  H01L21/2026 ,  H01L27/1296 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78618 ,  H01L29/78675 ,  H01L29/78696

摘要： There is disclosed a thin film transistor having a source region, a channel region, and a drain region in a semiconductor thin film whose crystals have grown in a transverse direction, the thin film transistor having a gate insulating film and a gate electrode in an upper part of the channel region, wherein a channel-region-side edge portion of the drain region or the source region is disposed in such a manner as to be positioned in the vicinity of an end position of lateral growth.

摘要翻译： 公开了一种在半导体薄膜中具有晶体沿横向生长的源极区，沟道区和漏极区的薄膜晶体管，薄膜晶体管具有栅极绝缘膜和位于上部的栅电极 沟道区域的一部分，其中漏极区域或源极区域的沟道区域侧边缘部分以这样的方式设置，以便位于横向生长的结束位置附近。

公开(公告)号：US06987035B2

公开(公告)日：2006-01-17

申请号：US10857941

申请日：2004-06-02

申请人： Yoshitaka Yamamoto ,  Mikihiko Nishitani ,  Masato Hiramatsu ,  Masayuki Jyumonji ,  Yoshinobu Kimura

发明人： Yoshitaka Yamamoto ,  Mikihiko Nishitani ,  Masato Hiramatsu ,  Masayuki Jyumonji ,  Yoshinobu Kimura

IPC分类号： H01L21/00

CPC分类号： H01L21/02686 ,  H01L21/2026 ,  H01L29/66772

摘要： A method for forming a crystallized semiconductor layer includes preparing a non-single-crystal semiconductor layer in which at least one crystal seed is formed, and irradiating with an energy ray the non-single-crystal semiconductor layer having the crystal seed formed therein to allow a crystal to laterally grow from the crystal seed in the non-single-crystal semiconductor layer, irradiation of the energy ray is carried out by positioning to at least a part of the crystal seed an area having a minimum intensity value of the energy ray, the energy ray having a confirmation that an area having a maximum intensity value of the energy ray is continuously reduced to the area having the minimum intensity value in an irradiated surface.

摘要翻译： 一种形成结晶化半导体层的方法包括制备其中形成至少一个晶种的非单晶半导体层，并且用能量线照射其中形成晶种的非单晶半导体层以允许 在非单晶半导体层中从晶种横向生长的晶体，通过将至少一部分晶种定位到晶种的至少一部分，进行能量射线的最小强度值的区域的照射， 能量射线确认具有能量射线的最大强度值的区域连续地减少到照射表面中具有最小强度值的区域。