公开(公告)号：US20070194693A1

公开(公告)日：2007-08-23

申请号：US10594249

申请日：2005-03-22

申请人： Hajime Saito ,  Mototaka Taneya ,  Takayuki Yuasa ,  Tatsuya Ryowa ,  Setsuhisa Tanabe ,  Yoichiu Kawakami ,  Shizuo Fujita ,  Mitsuru Funato

发明人： Hajime Saito ,  Mototaka Taneya ,  Takayuki Yuasa ,  Tatsuya Ryowa ,  Setsuhisa Tanabe ,  Yoichiu Kawakami ,  Shizuo Fujita ,  Mitsuru Funato

IPC分类号： H01J1/62 ,  H01J63/04

CPC分类号： C09K11/7706 ,  C09K11/54 ,  C09K11/565 ,  C09K11/574 ,  C09K11/584 ,  C09K11/62 ,  C09K11/64 ,  C09K11/7734 ,  C09K11/7743 ,  C09K11/7789 ,  H01L33/44 ,  H01L33/50 ,  H01L2924/0002 ,  H01L2924/00

摘要： Disclosed is a light-emitting device comprising a semiconductor excitation light source emitting blue-violet light and a solid material illuminant having an absorbent for the blue-violet light containing samarium (Sm). With such a constitution, the light-emitting device has high efficiency, long life and excellent color rendering properties.

摘要翻译： 公开了一种发光装置，其包括发射蓝紫色光的半导体激发光源和具有用于含有钐（Blue）的蓝紫色光的吸收剂的固体材料发光体。 通过这样的结构，发光装置的效率高，寿命长，显色性优异。

公开(公告)号：US20060187994A1

公开(公告)日：2006-08-24

申请号：US11402926

申请日：2006-04-13

申请人： Masaya Ishida ,  Tatsuya Morioka ,  Daisuke Hanaoka ,  Mototaka Taneya ,  Shigeo Fujita ,  Yoichi Kawakami ,  Masafumi Harada ,  Takatomo Sasaki ,  Yusuke Mori

发明人： Masaya Ishida ,  Tatsuya Morioka ,  Daisuke Hanaoka ,  Mototaka Taneya ,  Shigeo Fujita ,  Yoichi Kawakami ,  Masafumi Harada ,  Takatomo Sasaki ,  Yusuke Mori

IPC分类号： H01S3/09

CPC分类号： B82Y20/00 ,  C09K11/0883 ,  C09K11/62 ,  H01L33/502 ,  H01S5/005 ,  H01S5/02284 ,  H01S5/02296 ,  H01S5/34333 ,  Y10S977/783 ,  Y10S977/815 ,  Y10S977/816

摘要： A light-emitting apparatus composed of a light source that emits primary light and a phosphor that absorbs the primary light and emits secondary light offers high brightness, low power consumption, and a long lifetime while minimizing adverse effects on the environment. The phosphor is formed of a III-V group semiconductor in the form of fine-particle crystals each having a volume of 2 800 nm3 or less. The light emitted from the fine-particle crystals depends on their volume, and therefore giving the fine-particle crystals a predetermined volume distribution makes it possible to adjust the wavelength range of the secondary light.

摘要翻译： 由发出一次光的光源和吸收初级光并发出二次光的荧光体构成的发光装置，能够提供高亮度，低功耗，长寿命，同时最小化对环境的不利影响。 荧光体由体积为2×800nm±3以下的细颗粒晶体形式的III-V族半导体形成。 从微粒子晶体发出的光取决于其体积，因此赋予细粒子晶体预定的体积分布，可以调节二次光的波长范围。

公开(公告)号：US06984841B2

公开(公告)日：2006-01-10

申请号：US10468061

申请日：2002-01-30

申请人： Yuhzoh Tsuda ,  Daisuke Hanaoka ,  Takayuki Yuasa ,  Shigetoshi Ito ,  Mototaka Taneya

发明人： Yuhzoh Tsuda ,  Daisuke Hanaoka ,  Takayuki Yuasa ,  Shigetoshi Ito ,  Mototaka Taneya

IPC分类号： H01L29/06 ,  H01L31/072 ,  H01L31/109 ,  H01L31/0328 ,  H01L31/0336

CPC分类号： H01L33/20 ,  B82Y20/00 ,  H01L24/05 ,  H01L33/007 ,  H01L33/08 ,  H01L2224/48463 ,  H01S5/0021 ,  H01S5/0207 ,  H01S5/3202 ,  H01S5/34333 ,  H01S5/405

摘要： The nitride semiconductor light emitting device includes a nitride semiconductor underlayer (102) grown on a surface of a nitride semiconductor substrate or a surface of a nitride semiconductor substrate layer laminated over a base substrate of other than a nitride semiconductor, and a light emitting device structure having a light emitting layer (106) including a quantum well layer or a quantum well layer and a barrier layer in contact with the quantum well layer between an n type layer (103–105) and a p type layer (107–110) over the nitride semiconductor underlayer. It includes a depression (D) not flattened on a surface of the light emitting device structure even after growth of the light emitting device structure.

摘要翻译： 氮化物半导体发光器件包括在氮化物半导体衬底的表面上生长的氮化物半导体衬底（102）或层叠在氮化物半导体之外的基底衬底上的氮化物半导体衬底层的表面，以及发光器件结构 具有包括量子阱层或量子阱层的发光层（106）和与n型层（103-105）和ap型层（107-110）之间的量子阱层接触的阻挡层 氮化物半导体底层。 它包括即使在发光器件结构生长之后，在发光器件结构的表面上也不会变平的凹陷（D）。

公开(公告)号：US06812496B2

公开(公告)日：2004-11-02

申请号：US10334140

申请日：2002-12-31

申请人： Kunihiro Takatani ,  Shigetoshi Ito ,  Takayuki Yuasa ,  Mototaka Taneya ,  Kensaku Motoki

发明人： Kunihiro Takatani ,  Shigetoshi Ito ,  Takayuki Yuasa ,  Mototaka Taneya ,  Kensaku Motoki

IPC分类号： H01L2715

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/0207 ,  H01S5/2201 ,  H01S5/2231 ,  H01S5/3202 ,  H01S2301/173

摘要： A nitride semiconductor laser device using a group III nitride semiconductor also as a substrate offers excellent operation characteristics and a long laser oscillation life. In a layered structure of a group III nitride semiconductor formed on a GaN substrate, a laser optical waveguide region is formed elsewhere than right above a dislocation-concentrated region extending so as to vertically penetrate the substrate, and electrodes are formed on the top surface of the layered structure and on the bottom surface of the substrate elsewhere than right above or below the dislocation-concentrated region. In a portion of the top surface of the layered structure and in a portion of the bottom surface of the substrate right above and below the dislocation-concentrated region, dielectric layers may be formed to prevent the electrodes from making contact with those regions.

摘要翻译： 也可以使用III族氮化物半导体作为基板的氮化物半导体激光器件具有优异的操作特性和较长的激光振荡寿命。 在形成在GaN衬底上的III族氮化物半导体的分层结构中，激光光波导区域形成在垂直贯穿衬底的位错集中区域的正上方的别处，并且电极形成在 层叠结构，并且位于基底的底表面上，位于位错集中区域正上方或下方。 在层状结构的顶表面的一部分中，并且在位错集中区域的正上方和下方的衬底的底表面的一部分中，可以形成电介质层以防止电极与那些区域接触。

公开(公告)号：US06518602B1

公开(公告)日：2003-02-11

申请号：US09653817

申请日：2000-09-01

申请人： Takayuki Yuasa ,  Masaya Ishida ,  Yuhzoh Tsuda ,  Mototaka Taneya

发明人： Takayuki Yuasa ,  Masaya Ishida ,  Yuhzoh Tsuda ,  Mototaka Taneya

IPC分类号： H01L3300

CPC分类号： H01L33/325 ,  H01S5/0021 ,  H01S5/0206 ,  H01S5/0422 ,  H01S5/22 ,  H01S5/305 ,  H01S5/32341 ,  H01S2301/173 ,  H01S2304/04

摘要： A nitride compound semiconductor light emitting device of the present invention includes: a nitride compound semiconductor substrate; and a light emitting device section including a nitride compound semiconductor provided on the nitride compound semiconductor substrate. The nitride compound semiconductor substrate contains a group VII element as an impurity.

摘要翻译： 本发明的氮化物化合物半导体发光器件包括：氮化物化合物半导体衬底; 以及包括设置在氮化物化合物半导体衬底上的氮化物化合物半导体的发光器件部分。 氮化物化合物半导体衬底含有作为杂质的VII族元素。

公开(公告)号：US5909425A

公开(公告)日：1999-06-01

申请号：US844278

申请日：1997-04-18

申请人： Takahiro Suyama ,  Mitsuhiro Matsumoto ,  Mototaka Taneya

发明人： Takahiro Suyama ,  Mitsuhiro Matsumoto ,  Mototaka Taneya

IPC分类号： G11B7/125 ,  H01S5/00 ,  H01S5/065 ,  G11B7/00

CPC分类号： G11B7/127 ,  H01S5/0658

摘要： An optical information reproduction apparatus includes a semiconductor laser device as a light source which provides oscillation as periodic pulse waves upon application of a DC current. The semiconductor laser device is disposed so that an optical distance L from a light-emitting point of the semiconductor laser device to a recording surface of an optical recording medium satisfies the following relationship: TP TP+(2L/C), where T is a period of pulse waves which are output from the semiconductor laser device in absence of a returning light from the optical recording medium; TP is a pulse width of the respective pulse waves which is defined as a width of a portion of the respective pulse waves, the portion having intensities which correspond to 10% or more of the peak intensity of the respective pulse waves; and C is a speed of light through air.

摘要翻译： 光信息再现装置包括作为在施加直流电流时作为周期性脉冲波提供振荡的光源的半导体激光装置。 半导体激光器件被设置为使得从半导体激光器件的发光点到光记录介质的记录表面的光学距离L满足以下关系：TP <（4L / C）和T> TP +（2L / C），其中T是在不存在来自光记录介质的返回光的情况下从半导体激光器件输出的脉冲周期; TP是各个脉波的脉冲宽度，其被定义为各个脉冲波的一部分的宽度，该部分的强度对应于各个脉冲波的峰值强度的10％以上; C是通过空气的光速。

公开(公告)号：US5280493A

公开(公告)日：1994-01-18

申请号：US859587

申请日：1992-03-27

申请人： Haruhisa Takiguchi ,  Hiroaki Kudo ,  Mototaka Taneya ,  Satoshi Sugahara

发明人： Haruhisa Takiguchi ,  Hiroaki Kudo ,  Mototaka Taneya ,  Satoshi Sugahara

IPC分类号： H01S5/00 ,  H01S5/12 ,  H01S5/20 ,  H01S5/223 ,  H01S5/227 ,  H01S5/34 ,  H01S5/343 ,  H01S3/19

CPC分类号： B82Y20/00 ,  H01S5/341 ,  H01S5/1228 ,  H01S5/2059 ,  H01S5/2238 ,  H01S5/2272 ,  H01S5/343

摘要： A quantum wire laser comprises a first multi-layer structure which is formed on a substrate and includes at least one first quantum well layer sandwiched by barrier layers, a second multi-layer structure which is formed on a laminated cross-section of the first multi-layer structure and is obtained by successively laminating a first barrier layer having a band gap larger than that of the first quantum well layer, a second quantum well layer having a band gap nearly equal to that of the first quantum well layer, and a second barrier layer having a band gap larger than those of the first and second quantum well layers, wherein a region for confining electrons is disposed in at least one of regions in the vicinity of the first quantum well layer and the second quantum well layer.

摘要翻译： 量子线激光器包括形成在衬底上并包括被阻挡层夹在中间的至少一个第一量子阱层的第一多层结构，第二多层结构形成在第一多层结构的层叠横截面上 通过连续地层叠具有比第一量子阱层的带隙大的带隙的第一势垒层，具有与第一量子阱层的带隙几乎相等的带隙的第二量子阱层而获得的第二势垒层， 阻挡层的带隙大于第一和第二量子阱层的阻挡层，其中用于限制电子的区域设置在第一量子阱层和第二量子阱层附近的至少一个区域中。

公开(公告)号：US4890293A

公开(公告)日：1989-12-26

申请号：US255049

申请日：1988-10-07

申请人： Mototaka Taneya ,  Kosei Takahashi ,  Toshiro Hayakawa ,  Sadayoshi Matsui ,  Mitsuhiro Matsumoto ,  Hiroyuki Hosoba

发明人： Mototaka Taneya ,  Kosei Takahashi ,  Toshiro Hayakawa ,  Sadayoshi Matsui ,  Mitsuhiro Matsumoto ,  Hiroyuki Hosoba

IPC分类号： H01S5/00 ,  H01S5/20 ,  H01S5/22 ,  H01S5/32 ,  H01S5/34 ,  H01S5/343 ,  H01S5/40

CPC分类号： B82Y20/00 ,  H01S5/34 ,  H01S5/20 ,  H01S5/209 ,  H01S5/22 ,  H01S5/3211 ,  H01S5/3432 ,  H01S5/4031

摘要： A semiconductor laser device comprising a first layer that is of a first conductivity type; a second layer that is disposed on the first layer, the second layer having a forbidden bandgap smaller than that of the first layer and having a refraction index larger than that of the first layer; a third layer that is of a second conductivity type; the third layer being disposed over the second layer, having a forbidden bandgap larger than that of the second layer, and having a refraction index smaller than that of the second layer; a fourth layer that functions as a quantum wall, the fourth layer being disposed between the second and third layers and the thickness of the fourth layer being the de Broglie's wavelength or less; and at least one striped mesa, the lower portion of which is constituted by the third layer, wherein the fourth layer has a forbidden bandgap that is larger than that of the energy of photons generated by the second layer, and moreover the fourth layer has the etching characteristics that are different from those of the third layer positioned just above the fourth layer.

公开(公告)号：US4870651A

公开(公告)日：1989-09-26

申请号：US127836

申请日：1987-12-02

申请人： Mototaka Taneya ,  Mitsuhiro Matsumoto ,  Sadayoshi Matsui

发明人： Mototaka Taneya ,  Mitsuhiro Matsumoto ,  Sadayoshi Matsui

IPC分类号： H01S5/00 ,  H01S5/14 ,  H01S5/40

CPC分类号： H01S5/14 ,  H01S5/4062

摘要： A semiconductor light-emitting apparatus comprising a semiconductor laser array device with a plurality of lasing filaments and a mode-mixing device with a striped optical waveguide that attains an optical phase-coupling with the semiconductor laser array device, whereby beams from the semiconductor laser array device are emitted from the light-emitting facet of the semiconductor light-emitting apparatus via the mode-mixing device, thereby attaining a near-field pattern with a minimized ripple rate on the optical intensity.

摘要翻译： 一种半导体发光装置，包括具有多个激光灯丝的半导体激光器阵列器件和具有带状光波导的模式混合器件，其与半导体激光器阵列器件实现光学相位耦合，由此来自半导体激光器阵列的光束 器件经由模拟混合器件从半导体发光装置的发光面发射，从而获得具有最小纹波率的近场图案对光强度的影响。

公开(公告)号：US4799225A

公开(公告)日：1989-01-17

申请号：US104865

申请日：1987-10-05

申请人： Mototaka Taneya ,  Sadayoshi Matsui ,  Mitsuhiro Matsumoto

发明人： Mototaka Taneya ,  Sadayoshi Matsui ,  Mitsuhiro Matsumoto

IPC分类号： H01S5/00 ,  H01S5/042 ,  H01S5/40 ,  H01S3/19

CPC分类号： H01S5/4068

摘要： A semiconductor laser array device with a waveguide structure comprising a first array portion which is composed of a plurality of parallel waveguides; a second array portion which is composed of a plurality of parallel waveguides; a third array portion which is composed of a plurality of symmetrically branching waveguides that optically connect the ends of the parallel waveguides of the first array portion; and a fourth array portion which is composed of a plurality of symmetrically branching waveguides that are optically connected to the other ends of the parallel waveguides of the second array portion, the ends of said symmetrically branching waveguides of the fourth array portion meeting one laser-emitting face of said laser array device at which said symmetrically branching waveguides begin to be optically combined with the adjacent symmetrically branching waveguides.

摘要翻译： 一种具有波导结构的半导体激光阵列器件，包括由多个平行波导构成的第一阵列部分; 由多个平行波导构成的第二阵列部分; 第三阵列部分，其由多个对称分支波导构成，所述多个对称分支波导光学连接所述第一阵列部分的平行波导的端部; 以及第四阵列部分，其由多个对称分支波导组成，所述多个对称分支波导光学连接到所述第二阵列部分的平行波导的另一端，所述第四阵列部分的所述对称分支波导的端部满足一个激光发射 所述激光阵列器件的所述对称分支波导开始与相邻对称分支波导光学组合的面。