Abstract:
A magnetics package comprising: a primary coil configured to conduct a current flow; a secondary coil electrically isolated from the primary coil and configured to conduct a current flow, wherein the secondary coil is embedded in a mold compound; and a magnetic core inductively coupling the primary coil and the secondary coil, wherein a current flow in the primary coil produces a magnetic field in the magnetic core, and the magnetic field in the magnetic core induces a current flow in the secondary coil.
Abstract:
Semiconductor die packages are disclosed. An exemplary semiconductor die package includes a premolded substrate. The premolded substrate can have a semiconductor die attached to it, and an encapsulating material may be disposed over the semiconductor die.
Abstract:
A shielding assembly is configured to provide electromagnetic shielding and environmental protection to one or more electronic components coupled to a substrate. The shielding assembly includes a non-conductive mold compound layer, such as a dielectric epoxy. The mold compound layer is applied to a top surface of the substrate, thereby covering the electronic components and providing protection against environmentally induced conditions such as corrosion, humidity, and mechanical stress. The shielding assembly also includes a conductive layer applied to a top surface of the mold compound layer. The conductive layer is coupled to a ground plane in the substrate, thereby enabling the electromagnetic shielding function. The conductive layer is coupled to the ground plane via one or more metallized contacts that are coupled to the substrate and extend through the mold compound layer.
Abstract:
A structure and method of manufacture for an improved multi-chip semiconductor package that reduces package resistance to a negligible level, and offers superior thermal performance. Housing of multiple dies is facilitated by providing electrically isolated lead frames that are separated from a common base carrier by a non-conductive layer of laminating material. A silicon die is attached inside a cavity formed in each lead frame. Direct connection of the active surface of the silicon die to the printed circuit board is then made by an array of solder bumps that is distributed across the surface of each die as well as the edges of the lead frame adjacent to each die.
Abstract:
Semiconductor die packages and methods of making them are disclosed. An exemplary package comprises a leadframe having a source lead and a gate lead, and a semiconductor die coupled to the source and gate leads at a first surface of the leadframe. The source lead has a protruding region at a second surface of the leadframe. A molding material is disposed around the semiconductor die, the gate lead, and the source lead such that a surface of the die and a surface of the protruding region are left exposed by the molding material. An exemplary method comprises obtaining the semiconductor die and leadframe, and forming a molding material around at least a portion of the leadframe and die such that a surface of the protruding region is exposed through the molding material.
Abstract:
A semiconductor die package is disclosed. In one embodiment, the semiconductor die package has a substrate. It includes (i) a lead frame structure including a die attach region with a die attach surface and a lead having a lead surface, and (ii) a molding material. The die attach surface and the lead surface are exposed through the molding material. A semiconductor die is on the die attach region, and the semiconductor die is electrically coupled to the lead.
Abstract:
A semiconductor die package capable of being mounted to a motherboard is disclosed. The semiconductor die package includes a substrate, and a first semiconductor die mounted on the substrate, where the first semiconductor die includes a first vertical device comprising a first input region and a first output region at opposite surfaces of the first semiconductor die. The semiconductor die package includes a second semiconductor die mounted on the substrate, where second semiconductor die comprises a second vertical device comprising a second input region and a second output region at opposite surfaces of the second semiconductor die. A substantially planar conductive node clip electrically communicates the first output region in the first semiconductor die and the second input region in the second semiconductor die. The first semiconductor die and the second semiconductor die are between the substrate and the conductive node clip.
Abstract:
A structure and method of manufacture for an improved multi-chip semiconductor package that reduces package resistance to a negligible level, and offers superior thermal performance. Housing of multiple dies is facilitated by providing electrically isolated lead frames that are separated from a common base carrier by a non-conductive layer of laminating material. A silicon die is attached inside a cavity formed in each lead frame. Direct connection of the active surface of the silicon die to the printed circuit board is then made by an array of solder bumps that is distributed across the surface of each die as well as the edges of the lead frame adjacent to each die.
Abstract:
Embodiments of the invention are directed to semiconductor die packages. One embodiment of the invention is directed to a semiconductor die package including, (a) a semiconductor die including a first surface and a second surface, (b) a source lead structure including protruding region having a major surface, the source lead structure being coupled to the first surface, (c) a gate lead structure being coupled to the first surface, and (d) a molding material around the source lead structure and the semiconductor die, where the molding material exposes the second surface of the semiconductor die and the major surface of the source lead structure.
Abstract:
A multichip module package uses bond wire with plastic resin on one side of a lead frame to package an integrated circuit and flip chip techniques to attach one or more mosfets to the other side of the lead frame. The assembled multichip module 30 has an integrated circuit controller 14 on a central die pad. Wire bonds 16 extend from contact areas on the integrated circuit to outer leads 2.6 of the lead frame 10. On the opposite, lower side of the central die pad, the sources and gates of the mosfets 24, 26 are bump or stud attached to the half etched regions of the lead frame. The drains 36 of the mosfets and the ball contacts 22.1 on the outer leads are soldered to a printed circuit board.