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    Chemical mechanical polishing system having multiple polishing stations and providing relative linear polishing motion
    41.
    发明授权
    Chemical mechanical polishing system having multiple polishing stations and providing relative linear polishing motion 有权
    化学机械抛光系统具有多个抛光台并提供相对的线性抛光运动

    公开(公告)号：US07255632B2

    公开(公告)日：2007-08-14

    申请号：US11329648

    申请日：2006-01-10

    Applicant: Robert D. Tolles ,  Norm Shendon ,  Sasson Somekh ,  Ilya Perlov ,  Eugene Gantvarg ,  Harry Q. Lee

    Inventor： Robert D. Tolles ,  Norm Shendon ,  Sasson Somekh ,  Ilya Perlov ,  Eugene Gantvarg ,  Harry Q. Lee

    IPC: B24B1/00

    CPC classification number: H01L21/67057 ,  B08B1/007 ,  B24B27/0023 ,  B24B37/30 ,  B24B37/345 ,  B24B41/005 ,  B24B53/017 ,  B24B57/02 ,  H01L21/30625 ,  H01L21/67051

    Abstract: A polishing method usable in an apparatus including a rotatable member rotatable about a first axis, at least one substrate head assembly supported on said rotatable member, and at least two polishing surfaces arranged below said rotatable member at respective angular positions about said first axis is described. In one implementation, a substrate can be mounted onto a first one of said at least one substrate head assembly. The rotatable member can be rotated to a position so that the substrate overlies a selected one of the polishing surfaces. The substrate can be engaged with said selected polishing surface and relative linear movement imparted between the selected polishing surface and the first substrate head assembly, while the substrate is engaged with the selected polishing surface.

    Abstract translation: 描述了可用于包括可围绕第一轴可旋转的可旋转构件，支撑在所述可旋转构件上的至少一个基板头组件和在围绕所述第一轴线的各个角位置处布置在所述可旋转构件下方的至少两个抛光表面的设备的抛光方法， 。 在一个实施方案中，可以将衬底安装在所述至少一个衬底头组件中的第一个上。 可旋转构件可以旋转到一个位置，使得衬底覆盖所选择的一个抛光表面。 衬底可以与所选择的抛光表面接合并且在所选择的抛光表面和第一衬底头组件之间施加的相对线性运动，同时衬底与所选择的抛光表面接合。

    Method of Forming A Damascene Structure with Integrated Planar Dielectric Layers
    43.
    发明申请
    Method of Forming A Damascene Structure with Integrated Planar Dielectric Layers 有权
    用集成平面介电层形成镶嵌结构的方法

    公开(公告)号：US20070123033A1

    公开(公告)日：2007-05-31

    申请号：US11670720

    申请日：2007-02-02

    Applicant: Tom Wu ,  Sasson Somekh ,  Chien Chiang

    Inventor： Tom Wu ,  Sasson Somekh ,  Chien Chiang

    IPC: H01L21/4763

    CPC classification number: H01L21/7684 ,  C25D3/02 ,  C25D3/38 ,  C25D5/22 ,  C25D5/34 ,  C25D7/123 ,  C25D17/001 ,  H01L21/3212 ,  H01L21/32125

    Abstract: Methods are provided for forming a circuit component on a workpiece substrate. The methods comprise the steps of depositing a dielectric material over the substrate; etching a pattern through the dielectric material to expose a portion of the substrate; depositing a barrier metal over the dielectric material and the exposed portion of the substrate; depositing a conductive metal over the barrier metal, the deposited conductive metal having a thickness sufficient to fill the etched pattern; planarizing the conductive metal to form a planar metal layer; and polishing the metal layer and the barrier metal in a single polishing step using an abrasive-free polish until the dielectric material surrounding the pattern is exposed.

    Abstract translation: 提供了用于在工件基板上形成电路部件的方法。 该方法包括以下步骤：在衬底上沉积电介质材料; 蚀刻通过介电材料的图案以暴露基底的一部分; 在介电材料和基板的暴露部分上沉积阻挡金属; 在阻挡金属上沉积导电金属，沉积的导电金属具有足以填充蚀刻图案的厚度; 平面化导电金属以形成平坦的金属层; 并且在单次抛光步骤中使用无磨料抛光剂抛光金属层和阻挡金属，直到暴露图案周围的电介质材料。

    Web lift system for chemical mechanical planarization
    45.
    发明授权
    Web lift system for chemical mechanical planarization 失效

    公开(公告)号：US07008303B2

    公开(公告)日：2006-03-07

    申请号：US10408032

    申请日：2003-04-03

    Applicant: John M. White ,  Phillip R. Sommer ,  Sasson Somekh

    Inventor： John M. White ,  Phillip R. Sommer ,  Sasson Somekh

    IPC: B24B1/00 ,  B24B7/00

    CPC classification number: B24B37/16 ,  B24B21/004 ,  B24B21/008 ,  B24B21/20

    Abstract: Generally, a method and system for lifting a web of polishing material is provided. In one embodiment, the system includes a platen that has a first lift member disposed adjacent to a first side and a second lift member disposed adjacent to a second side. The platen is adapted to support the web of polishing media that is disposed between the first and the second lift members. A method includes supporting a web of polishing media on a platen between a first lift member and a second lift member and moving at least the first lift member or the second lift member to an extended position relative the platen that places the web in a spaced-apart relation with the platen.

    End point detection for sputtering and resputtering
    47.
    发明申请
    End point detection for sputtering and resputtering 失效
    溅射和再溅射的终点检测

    公开(公告)号：US20050173239A1

    公开(公告)日：2005-08-11

    申请号：US10659902

    申请日：2003-09-11

    Applicant: Sasson Somekh ,  Marc Schweitzer ,  John Forster ,  Zheng Xu ,  Roderick Mosely ,  Barry Chin ,  Howard Grunes

    Inventor： Sasson Somekh ,  Marc Schweitzer ,  John Forster ,  Zheng Xu ,  Roderick Mosely ,  Barry Chin ,  Howard Grunes

    IPC: C23C14/04 ,  C23C14/16 ,  C23C14/32 ,  C23C14/54 ,  C23C14/58 ,  G01N21/68 ,  H01J37/32 ,  H01L21/285 ,  H01L21/66 ,  H01L21/768

    CPC classification number: C23C14/544 ,  C23C14/046 ,  C23C14/165 ,  C23C14/5833 ,  C23C14/5873 ,  G01N21/68 ,  H01J37/321 ,  H01J37/32477 ,  H01J37/32935 ,  H01J37/32963 ,  H01J37/3455 ,  H01L21/2855 ,  H01L21/76814 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76862 ,  H01L21/76865 ,  H01L22/26 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: Plasma etching or resputtering of a layer of sputtered materials including opaque metal conductor materials may be controlled in a sputter reactor system. In one embodiment, resputtering of a sputter deposited layer is performed after material has been sputtered deposited and while additional material is being sputter deposited onto a substrate. A path positioned within a chamber of the system directs light or other radiation emitted by the plasma to a chamber window or other optical view-port which is protected by a shield against deposition by the conductor material. In one embodiment, the radiation path is folded to reflect plasma light around the chamber shield and through the window to a detector positioned outside the chamber window. Although deposition material may be deposited onto portions of the folded radiation path, in many applications, the deposition material will be sufficiently reflective to permit the emission spectra to be detected by a spectrometer or other suitable detector without significant signal loss. The etching or resputtering may be terminated when the detector detects that an underlying layer has been reached or when some other suitable process point has been reached.

    Abstract translation: 可以在溅射反应器系统中控制包括不透明金属导体材料的溅射材料层的等离子体蚀刻或再溅射。 在一个实施例中，溅射沉积层的溅射在材料溅射沉积之后进行，并且另外的材料被溅射沉积到衬底上。 位于系统的腔室内的路径将等离子体发射的光或其他辐射引导到腔室窗口或其他光学视图端口，其被屏蔽物保护以防止被导体材料沉积。 在一个实施例中，辐射路径被折叠以将等离子体光围绕室屏蔽件并且通过窗口反射到位于室窗口外部的检测器。 虽然沉积材料可以沉积在折叠辐射路径的部分上，但是在许多应用中，沉积材料将被充分反射，以允许发射光谱由光谱仪或其它合适的检测器检测，而没有显着的信号损失。 当检测器检测到已经到达下层或者当达到某些其它合适的处理点时，蚀刻或再溅射可以被终止。

    Real time defect source identification
    49.
    发明授权
    Real time defect source identification 有权
    实时缺陷源识别

    公开(公告)号：US06763130B1

    公开(公告)日：2004-07-13

    申请号：US09358512

    申请日：1999-07-21

    Applicant: Sasson Somekh ,  Amotz Maimon

    Inventor： Sasson Somekh ,  Amotz Maimon

    IPC: G06K900

    CPC classification number: G05B19/41875 ,  G05B2219/45031 ,  G05B2219/50064 ,  H01L22/26 ,  H01L2924/0002 ,  Y02P90/10 ,  Y02P90/12 ,  Y02P90/22 ,  Y02P90/86 ,  H01L2924/00

    Abstract: A method and apparatus for inspecting a semiconductor wafer provides real-time information identifying tools visited by wafers under inspection and the process parameters used at those tools, and displays this information at the wafer inspection tool. Embodiments include inspecting a wafer using an inspection tool, such as a CCD imager, generating a list of the tools visited by the wafer from data retrieved from a conventional manufacturing execution system and displaying the list at the inspection tool, along with a defect map. The user may then request that a set of process parameters and tool parameters for any of the tools identified on the list be displayed at the inspection tool. Thus, at the time that defects are discovered, the user is automatically provided with a list of the tools visited by the wafer and has easy access to the process parameters used at each of those tools. This information facilitates tracing the causes of defects to their source, such as to a particular process step or to a particular piece of processing equipment, and enables early and effective corrective action to be implemented.

    Abstract translation: 用于检查半导体晶片的方法和装置提供了识别被检查晶片所访问的工具的实时信息以及在这些工具中使用的工艺参数，并且在晶片检查工具上显示该信息。 实施例包括使用诸如CCD成像仪之类的检查工具来检查晶片，并从缺陷图连同从常规制造执行系统检索的数据中产生由晶片访问的工具列表，并在检查工具上显示列表。 然后，用户可以请求在检查工具上显示用于列表上标识的任何工具的一组过程参数和工具参数。 因此，在发现缺陷的时刻，用户被自动提供由晶片访问的工具的列表，并且可以容易地访问在这些工具中的每个工具使用的工艺参数。 该信息有助于将缺陷的原因追溯到其来源，例如到特定的处理步骤或特定的处理设备，并且能够实现早期和有效的纠正措施。

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