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    End point detection for sputtering and resputtering
    1.
    发明申请
    End point detection for sputtering and resputtering 失效
    溅射和再溅射的终点检测

    公开(公告)号：US20050173239A1

    公开(公告)日：2005-08-11

    申请号：US10659902

    申请日：2003-09-11

    申请人： Sasson Somekh ,  Marc Schweitzer ,  John Forster ,  Zheng Xu ,  Roderick Mosely ,  Barry Chin ,  Howard Grunes

    发明人： Sasson Somekh ,  Marc Schweitzer ,  John Forster ,  Zheng Xu ,  Roderick Mosely ,  Barry Chin ,  Howard Grunes

    IPC分类号： C23C14/04 ,  C23C14/16 ,  C23C14/32 ,  C23C14/54 ,  C23C14/58 ,  G01N21/68 ,  H01J37/32 ,  H01L21/285 ,  H01L21/66 ,  H01L21/768

    CPC分类号： C23C14/544 ,  C23C14/046 ,  C23C14/165 ,  C23C14/5833 ,  C23C14/5873 ,  G01N21/68 ,  H01J37/321 ,  H01J37/32477 ,  H01J37/32935 ,  H01J37/32963 ,  H01J37/3455 ,  H01L21/2855 ,  H01L21/76814 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76862 ,  H01L21/76865 ,  H01L22/26 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Plasma etching or resputtering of a layer of sputtered materials including opaque metal conductor materials may be controlled in a sputter reactor system. In one embodiment, resputtering of a sputter deposited layer is performed after material has been sputtered deposited and while additional material is being sputter deposited onto a substrate. A path positioned within a chamber of the system directs light or other radiation emitted by the plasma to a chamber window or other optical view-port which is protected by a shield against deposition by the conductor material. In one embodiment, the radiation path is folded to reflect plasma light around the chamber shield and through the window to a detector positioned outside the chamber window. Although deposition material may be deposited onto portions of the folded radiation path, in many applications, the deposition material will be sufficiently reflective to permit the emission spectra to be detected by a spectrometer or other suitable detector without significant signal loss. The etching or resputtering may be terminated when the detector detects that an underlying layer has been reached or when some other suitable process point has been reached.

    摘要翻译： 可以在溅射反应器系统中控制包括不透明金属导体材料的溅射材料层的等离子体蚀刻或再溅射。 在一个实施例中，溅射沉积层的溅射在材料溅射沉积之后进行，并且另外的材料被溅射沉积到衬底上。 位于系统的腔室内的路径将等离子体发射的光或其他辐射引导到腔室窗口或其他光学视图端口，其被屏蔽物保护以防止被导体材料沉积。 在一个实施例中，辐射路径被折叠以将等离子体光围绕室屏蔽件并且通过窗口反射到位于室窗口外部的检测器。 虽然沉积材料可以沉积在折叠辐射路径的部分上，但是在许多应用中，沉积材料将被充分反射，以允许发射光谱由光谱仪或其它合适的检测器检测，而没有显着的信号损失。 当检测器检测到已经到达下层或者当达到某些其它合适的处理点时，蚀刻或再溅射可以被终止。

    Staged-vacuum wafer processing system and method
    2.
    发明授权
    Staged-vacuum wafer processing system and method 失效
    分级真空晶圆加工系统及方法

    公开(公告)号：US5186718A

    公开(公告)日：1993-02-16

    申请号：US685976

    申请日：1991-04-15

    申请人： Avi Tepman ,  Howard Grunes ,  Sasson Somekh ,  Dan Maydan

    发明人： Avi Tepman ,  Howard Grunes ,  Sasson Somekh ,  Dan Maydan

    IPC分类号： H01L21/00 ,  H01L21/677

    CPC分类号： H01L21/67167 ,  H01L21/67184 ,  H01L21/67742 ,  Y10S148/006 ,  Y10S148/169 ,  Y10T29/41 ,  Y10T29/413

    摘要： A processing system for workpieces such as semiconductor wafers is disclosed which incorporates multiple, isolated vacuum stages between the cassette load lock station and the main vacuum processing chambers. A vacuum gradient is applied between the cassette load lock and the main processing chambers to facilitate the use of a very high degree of vacuum in the processing chambers without lengthy pump down times. Separate robot chambers are associated with the vacuum processing chambers and the load lock(s). In addition, separate transport paths are provided between the two robot chambers to facilitate loading and unloading of workpieces. Pre-treatment and post-treatment chambers may be incorporated in the two transport paths.

    摘要翻译： 公开了一种用于诸如半导体晶片的工件的处理系统，其在盒加载锁定站和主真空处理室之间并入多个隔离的真空级。 在盒式加载锁和主处理室之间施加真空梯度，以便在处理室中使用非常高的真空度，而不需要冗长的抽空时间。 分离的机器人腔室与真空处理室和负载锁相关联。 另外，在两个机器人室之间提供单独的输送路径，以便于加工和卸载工件。 预处理和后处理室可以并入两个运输路径中。

    Method and apparatus for electro-chemical processing
    5.
    发明授权
    Method and apparatus for electro-chemical processing 失效
    电化学处理方法和装置

    公开(公告)号：US06896776B2

    公开(公告)日：2005-05-24

    申请号：US09739139

    申请日：2000-12-18

    申请人： Wei-Yung Hsu ,  Liang-Yuh Chen ,  Ratson Morad ,  Daniel A. Carl ,  Sasson Somekh

    发明人： Wei-Yung Hsu ,  Liang-Yuh Chen ,  Ratson Morad ,  Daniel A. Carl ,  Sasson Somekh

    IPC分类号： B24B37/00 ,  B24B37/04 ,  C25D5/00 ,  C25D5/22 ,  C25D7/12 ,  H01L21/288 ,  H01L21/304 ,  H01L21/321 ,  H01L21/768 ,  C25D1/00 ,  C25D17/00

    CPC分类号： C25D7/123 ,  C25D5/06 ,  C25D5/22 ,  C25D17/001 ,  C25D17/008 ,  H01L21/288 ,  H01L21/2885 ,  H01L21/3212 ,  H01L21/7684 ,  H01L21/76877

    摘要： A method and apparatus is provided for depositing and planarizing a material layer on a substrate. In one embodiment, an apparatus is provided which includes a partial enclosure, a permeable disc, a diffuser plate and optionally an anode. A substrate carrier is positionable above the partial enclosure and is adapted to move a substrate into and out of contact or close proximity with the permeable disc. The partial enclosure and the substrate carrier are rotatable to provide relative motion between a substrate and the permeable disc. In another aspect, a method is provided in which a substrate is positioned in a partial enclosure having an electrolyte therein at a fist distance from a permeable disc. A current is optionally applied to the surface of the substrate and a first thickness is deposited on the substrate. Next, the substrate is positioned closer to the permeable disc and a second thickness is deposited on the substrate. During the deposition, the partial enclosure and the substrate are rotated relative one another.

    摘要翻译： 提供了一种用于沉积和平坦化衬底上的材料层的方法和装置。 在一个实施例中，提供了一种装置，其包括部分外壳，可渗透盘，漫射板和任选的阳极。 衬底载体可定位在部分外壳上方，并且适于将衬底移动到与可渗透盘接触或接近的位置。 部分外壳和基板载体可旋转以提供基板和可渗透盘之间的相对运动。 在另一方面，提供了一种方法，其中将基板定位在其中具有电解质的部分封闭件中，其中离开可渗透盘的第一距离。 任选地将电流施加到衬底的表面，并且在衬底上沉积第一厚度。 接下来，将基板定位成更靠近可渗透盘，并且在基板上沉积第二厚度。 在沉积期间，部分封闭物和基底相对彼此旋转。

    Web lift system for chemical mechanical planarization
    6.
    发明授权
    Web lift system for chemical mechanical planarization 失效
    用于化学机械平面化的Web提升系统

    公开(公告)号：US06561884B1

    公开(公告)日：2003-05-13

    申请号：US09651657

    申请日：2000-08-29

    申请人： John M. White ,  Phillip R. Sommer ,  Sasson Somekh

    发明人： John M. White ,  Phillip R. Sommer ,  Sasson Somekh

    IPC分类号： B24B700

    CPC分类号： B24B37/16 ,  B24B21/004 ,  B24B21/008 ,  B24B21/20

    摘要： Generally, a method and system for lifting a web of polishing material is provided. In one embodiment, the system includes a platen that has a first lift member disposed adjacent to a first side and a second lift member disposed adjacent to a second side. The platen is adapted to support the web of polishing media that is disposed between the first and the second lift members. A method includes supporting a web of polishing media on a platen between a first lift member and a second lift member and moving at least the first lift member or the second lift member to an extended position relative the platen that places the web in a spaced-apart relation with the platen.

    摘要翻译： 通常，提供了用于提升抛光材料的网的方法和系统。 在一个实施例中，系统包括具有邻近第一侧设置的第一提升构件和邻近第二侧设置的第二提升构件的压板。 压板适于支撑布置在第一和第二升降构件之间的抛光介质的腹板。 一种方法包括在第一提升构件和第二提升构件之间的台板上支撑抛光介质的腹板，并且将至少第一提升构件或第二提升构件移动到相对于台板的延伸位置， 与压板分开关系。

    Etch stop layer for dual damascene process
    8.
    发明授权
    Etch stop layer for dual damascene process 失效
    用于双镶嵌工艺的蚀刻停止层

    公开(公告)号：US06291334B1

    公开(公告)日：2001-09-18

    申请号：US08995029

    申请日：1997-12-19

    申请人： Sasson Somekh

    发明人： Sasson Somekh

    IPC分类号： H01L21708

    CPC分类号： H01L21/76835 ,  H01L21/7681 ,  H01L21/76829

    摘要： The present invention provides a carbon based etch stop, such as a diamond like amorphous carbon, having a low dielectric constant and a method of forming a dual damascene structure. The low k etch stop is preferably deposited between two dielectric layers and patterned to define the underlying interlevel contacts/vias. The second or upper dielectric layer is formed over the etch stop and patterned to define the intralevel interconnects. The entire dual damascene structure is then etched in a single selective etch process which first etches the patterned interconnects, then etches the contact/vias past the patterned etch stop. The etch stop has a low dielectric constant relative to a conventional SiN etch stop, which minimizes the capacitive coupling between adjacent interconnect lines. The dual damascene structure is then filled with a suitable conductive material such as aluminum or copper and planarized using chemical mechanical polishing.

    摘要翻译： 本发明提供具有低介电常数的碳基蚀刻停止物，例如类金刚石无定形碳，以及形成双镶嵌结构的方法。 低k蚀刻停止件优选沉积在两个电介质层之间并被图案化以限定下面的层间接触/通路。 第二或上电介质层形成在蚀刻停止点上并被图案化以限定内部互连。 然后在单个选择性蚀刻工艺中蚀刻整个双镶嵌结构，其首先蚀刻图案化的互连，然后蚀刻通过图案化蚀刻停止点的接触/通孔。 蚀刻停止件相对于传统的SiN蚀刻停止层具有低的介电常数，其使相邻互连线之间的电容耦合最小化。 然后用合适的导电材料如铝或铜填充双镶嵌结构，并使用化学机械抛光进行平面化。

    Magnetic field-enhanced plasma etch reactor
    10.
    发明授权
    Magnetic field-enhanced plasma etch reactor 失效
    磁场增强等离子体蚀刻反应器

    公开(公告)号：US5215619A

    公开(公告)日：1993-06-01

    申请号：US760848

    申请日：1991-09-17

    申请人： David Cheng ,  Dan Maydan ,  Sasson Somekh ,  Kenneth R. Stalder ,  Dana L. Andrews ,  Mei Chang ,  John M. White ,  Jerry Y. K. Wong ,  Vladimir J. Zeitlin ,  David N. Wang

    发明人： David Cheng ,  Dan Maydan ,  Sasson Somekh ,  Kenneth R. Stalder ,  Dana L. Andrews ,  Mei Chang ,  John M. White ,  Jerry Y. K. Wong ,  Vladimir J. Zeitlin ,  David N. Wang

    IPC分类号： H01J37/32 ,  H01L21/00

    CPC分类号： H01L21/67069 ,  H01J37/32477 ,  H01J37/32623 ,  H01J37/32743 ,  H01J37/32862

    摘要： A magnetic field enhanced single wafer plasma etch reactor is disclosed. The features of the reactor include an electrically-controlled stepped magnetic field for providing high rate uniform etching at high pressures; temperature controlled reactor surfaces including heated anode surfaces (walls and gas manifold) and a cooled wafer supporting cathode; and a unitary wafer exchange mechanism comprising wafer lift pins which extend through the pedestal and a wafer clamp ring. The lift pins and clamp ring are moved vertically by a one-axis lift mechanism to accept the wafer from a cooperating external robot blade, clamp the wafer to the pedestal and return the wafer to the blade. The electrode cooling combines water cooling for the body of the electrode and a thermal conductivity-enhancing gas parallel-bowed interface between the wafer and electrode for keeping the wafer surface cooled despite the high power densities applied to the electrode. A gas feed-through device applies the cooling gas to the RF powered electrode without breakdown of the gas. Protective coatings/layers of materials such as quartz are provided for surfaces such as the clamp ring and gas manifold. The combination of these features provides a wide pressure regime, high etch rate, high throughput single wafer etcher which provides uniformity, directionality and selectivity at high gas pressures, operates cleanly and incorporates in-situ self-cleaning capability.

    摘要翻译： 公开了一种磁场增强型单晶片等离子体蚀刻反应器。 反应器的特征包括用于在高压下提供高速均匀蚀刻的电控步进磁场; 温度控制的反应器表面包括加热的阳极表面（壁和气体歧管）和冷却的晶片支撑阴极; 以及包括延伸穿过基座的晶片提升销和晶片夹紧环的整体晶片交换机构。 提升销和夹紧环通过单轴提升机构垂直移动，以从协作的外部机器人刀片接收晶片，将晶片夹紧到基座并将晶片返回到刀片。 电极冷却结合了用于电极体的水冷却和晶片和电极之间的热导率增强气体平行弓形界面，用于保持晶片表面冷却，尽管施加到电极的高功率密度。 气体馈通装置将冷却气体施加到RF供电的电极，而不会破坏气体。 为诸如夹紧环和气体歧管的表面提供保护涂层/诸如石英的材料层。 这些特征的组合提供了广泛的压力方案，高蚀刻速率，高通量单晶硅蚀刻器，其在高气体压力下提供均匀性，方向性和选择性，干净地操作并且并入现场自清洁能力。