公开(公告)号：US20050173239A1

公开(公告)日：2005-08-11

申请号：US10659902

申请日：2003-09-11

申请人： Sasson Somekh ,  Marc Schweitzer ,  John Forster ,  Zheng Xu ,  Roderick Mosely ,  Barry Chin ,  Howard Grunes

发明人： Sasson Somekh ,  Marc Schweitzer ,  John Forster ,  Zheng Xu ,  Roderick Mosely ,  Barry Chin ,  Howard Grunes

IPC分类号： C23C14/04 ,  C23C14/16 ,  C23C14/32 ,  C23C14/54 ,  C23C14/58 ,  G01N21/68 ,  H01J37/32 ,  H01L21/285 ,  H01L21/66 ,  H01L21/768

CPC分类号： C23C14/544 ,  C23C14/046 ,  C23C14/165 ,  C23C14/5833 ,  C23C14/5873 ,  G01N21/68 ,  H01J37/321 ,  H01J37/32477 ,  H01J37/32935 ,  H01J37/32963 ,  H01J37/3455 ,  H01L21/2855 ,  H01L21/76814 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76862 ,  H01L21/76865 ,  H01L22/26 ,  H01L2924/0002 ,  H01L2924/00

摘要： Plasma etching or resputtering of a layer of sputtered materials including opaque metal conductor materials may be controlled in a sputter reactor system. In one embodiment, resputtering of a sputter deposited layer is performed after material has been sputtered deposited and while additional material is being sputter deposited onto a substrate. A path positioned within a chamber of the system directs light or other radiation emitted by the plasma to a chamber window or other optical view-port which is protected by a shield against deposition by the conductor material. In one embodiment, the radiation path is folded to reflect plasma light around the chamber shield and through the window to a detector positioned outside the chamber window. Although deposition material may be deposited onto portions of the folded radiation path, in many applications, the deposition material will be sufficiently reflective to permit the emission spectra to be detected by a spectrometer or other suitable detector without significant signal loss. The etching or resputtering may be terminated when the detector detects that an underlying layer has been reached or when some other suitable process point has been reached.

摘要翻译： 可以在溅射反应器系统中控制包括不透明金属导体材料的溅射材料层的等离子体蚀刻或再溅射。 在一个实施例中，溅射沉积层的溅射在材料溅射沉积之后进行，并且另外的材料被溅射沉积到衬底上。 位于系统的腔室内的路径将等离子体发射的光或其他辐射引导到腔室窗口或其他光学视图端口，其被屏蔽物保护以防止被导体材料沉积。 在一个实施例中，辐射路径被折叠以将等离子体光围绕室屏蔽件并且通过窗口反射到位于室窗口外部的检测器。 虽然沉积材料可以沉积在折叠辐射路径的部分上，但是在许多应用中，沉积材料将被充分反射，以允许发射光谱由光谱仪或其它合适的检测器检测，而没有显着的信号损失。 当检测器检测到已经到达下层或者当达到某些其它合适的处理点时，蚀刻或再溅射可以被终止。

公开(公告)号：US20050255691A1

公开(公告)日：2005-11-17

申请号：US11184615

申请日：2005-07-19

申请人： Peijun Ding ,  Rong Tao ,  Zheng Xu ,  Daniel Lubben ,  Suraj Rengarajan ,  Michael Miller ,  Arvind Sundarrajan ,  Xianmin Tang ,  John Forster ,  Jianming Fu ,  Roderick Mosely ,  Fusen Chen ,  Praburam Gopalraja

发明人： Peijun Ding ,  Rong Tao ,  Zheng Xu ,  Daniel Lubben ,  Suraj Rengarajan ,  Michael Miller ,  Arvind Sundarrajan ,  Xianmin Tang ,  John Forster ,  Jianming Fu ,  Roderick Mosely ,  Fusen Chen ,  Praburam Gopalraja

IPC分类号： C23C14/04 ,  C23C14/34 ,  C23C14/35 ,  C23C14/56 ,  H01J37/32 ,  H01J37/34 ,  H01L21/285 ,  H01L21/4763 ,  H01L21/768

CPC分类号： C23C14/046 ,  C23C14/345 ,  C23C14/3457 ,  C23C14/35 ,  C23C14/358 ,  C23C14/564 ,  C23C14/568 ,  H01J37/321 ,  H01J37/3402 ,  H01J37/3408 ,  H01J37/3441 ,  H01J2237/3327 ,  H01L21/2855 ,  H01L21/76805 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76862 ,  H01L21/76865 ,  H01L21/76868 ,  H01L21/76871 ,  H01L21/76873 ,  H01L21/76876 ,  H01L21/76877 ,  H01L2221/1089

摘要： A magnetron sputter reactor for sputtering deposition materials such as tantalum, tantalum nitride and copper, for example, and its method of use, in which self-ionized plasma (SIP) sputtering and inductively coupled plasma (ICP) sputtering are promoted, either together or alternately, in the same or different chambers. Also, bottom coverage may be thinned or eliminated by ICP resputtering in one chamber and SIP in another. SIP is promoted by a small magnetron having poles of unequal magnetic strength and a high power applied to the target during sputtering. ICP is provided by one or more RF coils which inductively couple RF energy into a plasma. The combined SIP-ICP layers can act as a liner or barrier or seed or nucleation layer for hole. In addition, an RF coil may be sputtered to provide protective material during ICP resputtering. In another chamber an array of auxiliary magnets positioned along sidewalls of a magnetron sputter reactor on a side towards the wafer from the target. The magnetron preferably is a small, strong one having a stronger outer pole of a first magnetic polarity surrounding a weaker outer pole of a second magnetic polarity and rotates about the central axis of the chamber. The auxiliary magnets preferably have the first magnetic polarity to draw the unbalanced magnetic field component toward the wafer. The auxiliary magnets may be either permanent magnets or electromagnets.

摘要翻译： 用于溅射诸如钽，氮化钽和铜的沉积材料的磁控溅射反应器及其使用方法，其中促进了自离子等离子体（SIP）溅射和电感耦合等离子体（ICP）溅射，其一起或者 交替地，在相同或不同的室中。 此外，底部覆盖可以通过在一个室中的ICP再溅射和另一个室中的SIP来减薄或消除。 SIP由在溅射期间施加到靶的不均匀磁强度和高功率的磁极的小磁控管促进。 ICP由一个或多个将RF能量感应耦合到等离子体中的RF线圈提供。 组合的SIP-ICP层可以作为孔的衬垫或屏障或种子或成核层。 此外，可以在ICP溅射期间溅射RF线圈以提供保护材料。 在另一个腔室中，辅助磁体阵列沿磁控溅射反应器的侧壁朝着晶片从目标侧面定位。 磁控管优选地是小而强的，具有围绕第二磁极性较弱的外极的第一磁极的更强的外极并围绕腔的中心轴旋转。 辅助磁体优选地具有第一磁极以将不平衡的磁场分量拉向晶片。 辅助磁体可以是永磁体或电磁体。

公开(公告)号：US20050006222A1

公开(公告)日：2005-01-13

申请号：US10495506

申请日：2002-11-14

申请人： Peijun Ding ,  Rong Tao ,  Zheng Xu ,  Daniel Lubben ,  Suraj Rengarajan ,  Michael Miller ,  Arvind Sundarrajan ,  Xianmin Tang ,  John Forster ,  Jianming Fu ,  Roderick Mosely ,  Fusen Chen ,  Praburam Gopalraja

发明人： Peijun Ding ,  Rong Tao ,  Zheng Xu ,  Daniel Lubben ,  Suraj Rengarajan ,  Michael Miller ,  Arvind Sundarrajan ,  Xianmin Tang ,  John Forster ,  Jianming Fu ,  Roderick Mosely ,  Fusen Chen ,  Praburam Gopalraja

IPC分类号： C23C14/04 ,  C23C14/34 ,  C23C14/35 ,  C23C14/56 ,  H01J37/32 ,  H01J37/34 ,  H01L21/285 ,  H01L21/4763 ,  H01L21/768 ,  C23C14/00 ,  C23C14/32 ,  C25B9/00

CPC分类号： C23C14/046 ,  C23C14/345 ,  C23C14/3457 ,  C23C14/35 ,  C23C14/358 ,  C23C14/564 ,  C23C14/568 ,  H01J37/321 ,  H01J37/3402 ,  H01J37/3408 ,  H01J37/3441 ,  H01J2237/3327 ,  H01L21/2855 ,  H01L21/76805 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76862 ,  H01L21/76865 ,  H01L21/76868 ,  H01L21/76871 ,  H01L21/76873 ,  H01L21/76876 ,  H01L21/76877 ,  H01L2221/1089

摘要： A magnetron sputter reactor (410) and its method of use, in which SIP sputtering and ICP sputtering are promoted is disclosed. In another chamber (412) an array of auxiliary magnets positioned along sidewalls (414) of a magnetron sputter reactor on a side towards the wafer from the target is disclosed. The magnetron (436) preferably is a small one having a stronger outer pole (442) of a first polarity surrounding a weaker inner pole (440) of a second polarity all on a yoke (444) and rotates about the axis (438) of the chamber using rotation means (446, 448, 450). The auxiliary magnets (462) preferably have the first polarity to draw the unbalanced magnetic field (460) towards the wafer (424), which is on a pedestal (422) supplied with power (454). Argon (426) is supplied through a valve (428). The target (416) is supplied with power (434).

摘要翻译： 公开了一种促进SIP溅射和ICP溅射的磁控溅射反应器（410）及其使用方法。 在另一个室（412）中，公开了一种辅助磁体阵列，其沿着磁控溅射反应器的侧面（414）定位，所述磁控溅射反应器在朝向晶片的一侧朝向靶。 优选地，磁控管（436）是小的，其具有第一极性的更强的外极（442），其具有围绕轭（444）的第二极性的较弱内极（440），并且围绕轴线（438）旋转 所述室使用旋转装置（446,448,450）。 辅助磁体（462）优选地具有第一极性，以将不平衡磁场（460）朝着被提供电力（454）的基座（422）上的晶片（424）拉出。 氩（426）通过阀（428）供应。 目标（416）被供电（434）。

公开(公告)号：US20060070875A1

公开(公告)日：2006-04-06

申请号：US11229139

申请日：2005-09-15

申请人： Jaim Nulman ,  Sergio Edelstein ,  Mani Subramani ,  Zheng Xu ,  Howard Grunes ,  Avi Tepman ,  John Forster ,  Praburam Gopalraja

发明人： Jaim Nulman ,  Sergio Edelstein ,  Mani Subramani ,  Zheng Xu ,  Howard Grunes ,  Avi Tepman ,  John Forster ,  Praburam Gopalraja

IPC分类号： C23C14/00 ,  C25B11/00

CPC分类号： C23C14/34 ,  H01J37/321 ,  H01J37/34

摘要： A sputtering coil for a plasma chamber in a semiconductor fabrication system is provided. The sputtering coil couples energy into a plasma and also provides a source of sputtering material to be sputtered onto a workpiece from the coil to supplement material being sputtered from a target onto the workpiece. Alternatively a plurality of coils may be provided, one primarily for coupling energy into the plasma and the other primarily for providing a supplemental source of sputtering material to be sputtered on the workpiece.

公开(公告)号：US5763851A

公开(公告)日：1998-06-09

申请号：US676599

申请日：1996-07-03

申请人： John Forster ,  Aihua Chen ,  Howard Grunes ,  Robert B. Lowrance ,  Ralf Hofmann ,  Zheng Xu ,  Fernand Dorleans

发明人： John Forster ,  Aihua Chen ,  Howard Grunes ,  Robert B. Lowrance ,  Ralf Hofmann ,  Zheng Xu ,  Fernand Dorleans

IPC分类号： H01J37/32 ,  B23K10/00

CPC分类号： H01J37/32477 ,  H01J37/321 ,  Y10S156/916

摘要： A coil shield assembly for an RF field coil in a plasma processing system includes a first shield positioned inside the coil. The first shield has a central opening substantially surrounding a central space of a processing chamber in which the plasma is maintained. At least one slot is formed in the first shield and extends therethrough. A barrier is positioned between the first shield and the coil and spaced apart from the first shield near the at least one slot. The slot permits an RF signal from the coil to couple with the plasma, and the first shield and the barrier are structured and arranged to prevent plasma ions or sputtered material from bombarding the coil by a direct path from the central space and through the at least one slot.

摘要翻译： 用于等离子体处理系统中的RF场线圈的线圈屏蔽组件包括位于线圈内部的第一屏蔽件。 第一屏蔽件具有基本上围绕处理室的中心空间的中心开口，其中维持等离子体。 在第一屏蔽件中形成至少一个槽，并延伸穿过其中。 屏障位于第一屏蔽和线圈之间，并且在靠近至少一个槽的位置处与第一屏蔽隔开。 该槽允许来自线圈的RF信号与等离子体耦合，并且第一屏蔽和屏障被构造和布置成防止等离子体离子或溅射材料通过从中心空间的直接路径至少通过至少 一个槽

公开(公告)号：US06783639B2

公开(公告)日：2004-08-31

申请号：US10052951

申请日：2002-01-17

申请人： Jaim Nulman ,  Sergio Edelstein ,  Mani Subramani ,  Zheng Xu ,  Howard Grunes ,  Avi Tepman ,  John Forster ,  Praburam Gopalraja

发明人： Jaim Nulman ,  Sergio Edelstein ,  Mani Subramani ,  Zheng Xu ,  Howard Grunes ,  Avi Tepman ,  John Forster ,  Praburam Gopalraja

IPC分类号： C23C1434

CPC分类号： H01J37/3438 ,  H01J37/3402

摘要： A sputtering coil for a plasma chamber in a semiconductor fabrication system is provided. The sputtering coil couples energy into a plasma and also provides a source of sputtering material to be sputtered onto a workpiece from the coil to supplement material being sputtered from a target onto the workpiece. Alternatively a plurality of coils may be provided, one primarily for coupling energy into the plasma and the other primarily for providing a supplemental source of sputtering material to be sputtered on the workpiece.

公开(公告)号：US06368469B1

公开(公告)日：2002-04-09

申请号：US08851946

申请日：1997-05-06

申请人： Jaim Nulman ,  Sergio Edelstein ,  Mani Subramani ,  Zheng Xu ,  Howard Grunes ,  Avi Tepman ,  John Forster ,  Praburam Gopalraja

发明人： Jaim Nulman ,  Sergio Edelstein ,  Mani Subramani ,  Zheng Xu ,  Howard Grunes ,  Avi Tepman ,  John Forster ,  Praburam Gopalraja

IPC分类号： C23C1434

CPC分类号： H01J37/3438 ,  H01J37/3402

摘要： A sputtering coil for a plasma chamber in a semiconductor fabrication system is provided. The sputtering coil couples energy into a plasma and also provides a source of sputtering material to be sputtered onto a workpiece from the coil to supplement material being sputtered from a target onto the workpiece. Alternatively a plurality of coils may be provided, one primarily for coupling energy into the plasma and the other primarily for providing a supplemental source of sputtering material to be sputtered on the workpiece.

公开(公告)号：US20050208767A1

公开(公告)日：2005-09-22

申请号：US11069348

申请日：2005-02-28

申请人： Peijun Ding ,  Zheng Xu ,  Hong Zhang ,  Xianmin Tang ,  Praburam Gopalraja ,  Suraj Rengarajan ,  John Forster ,  Jianming Fu ,  Tony Chiang ,  Gongda Yao ,  Fusen Chen ,  Barry Chin ,  Gene Kohara

发明人： Peijun Ding ,  Zheng Xu ,  Hong Zhang ,  Xianmin Tang ,  Praburam Gopalraja ,  Suraj Rengarajan ,  John Forster ,  Jianming Fu ,  Tony Chiang ,  Gongda Yao ,  Fusen Chen ,  Barry Chin ,  Gene Kohara

IPC分类号： C23C14/06 ,  C23C14/16 ,  C23C14/32 ,  H01L21/285 ,  H01L21/44 ,  H01L21/4763 ,  H01L21/768

CPC分类号： H01L21/02183 ,  C23C14/024 ,  C23C14/046 ,  C23C14/0641 ,  C23C14/165 ,  C23C14/541 ,  C23C14/5806 ,  H01L21/022 ,  H01L21/02266 ,  H01L21/02271 ,  H01L21/02362 ,  H01L21/2855 ,  H01L21/318 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/76862 ,  H01L21/76876 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： We have discovered a method of providing a thin, approximately from about 2 Å to about 100 Å thick TaN seed layer, which can be used to induce the formation of alpha tantalum when tantalum is deposited over the TaN seed layer. Further, the TaN seed layer exhibits low resistivity, in the range of 30 μΩcm and can be used as a low resistivity barrier layer in the absence of an alpha tantalum layer. In one embodiment of the method, a TaN film is altered on its surface to form the TaN seed layer. In another embodiment of the method, a Ta film is altered on its surface to form the TaN seed layer.

摘要翻译： 我们已经发现了一种提供大约从大约2埃到大约100埃的Ta N种子层的薄的方法，其可以在钽沉积在Ta上时用于诱导形成α钽 N种子层。 此外，Ta N N种子层在30微米范围内显示低电阻率，并且可以在不存在α钽层的情况下用作低电阻率阻挡层。 在该方法的一个实施方案中，在其表面上改变TaN膜以形成Ta N N种子层。 在该方法的另一个实施方案中，在其表面上改变Ta膜以形成Ta N N种子层。

公开(公告)号：US20070241458A1

公开(公告)日：2007-10-18

申请号：US11809153

申请日：2007-05-30

申请人： Peijun Ding ,  Zheng Xu ,  Hong Zhang ,  Xianmin Tang ,  Praburam Gopalraja ,  Suraj Rengarajan ,  John Forster ,  Jianming Fu ,  Tony Chiang ,  Gongda Yao ,  Fusen Chen ,  Barry Chin ,  Gene Kohara

发明人： Peijun Ding ,  Zheng Xu ,  Hong Zhang ,  Xianmin Tang ,  Praburam Gopalraja ,  Suraj Rengarajan ,  John Forster ,  Jianming Fu ,  Tony Chiang ,  Gongda Yao ,  Fusen Chen ,  Barry Chin ,  Gene Kohara

IPC分类号： H01L23/48

CPC分类号： H01L21/02183 ,  C23C14/024 ,  C23C14/046 ,  C23C14/0641 ,  C23C14/165 ,  C23C14/541 ,  C23C14/5806 ,  H01L21/022 ,  H01L21/02266 ,  H01L21/02271 ,  H01L21/02362 ,  H01L21/2855 ,  H01L21/318 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/76862 ,  H01L21/76876 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： A metal/metal nitride barrier layer for semiconductor device applications. The barrier layer is particularly useful in contact vias where high conductivity of the via is important, and a lower resistivity barrier layer provides improved overall via conductivity.

摘要翻译： 用于半导体器件应用的金属/金属氮化物阻挡层。 阻挡层在通孔的高导电性很重要的接触孔中特别有用，并且较低电阻率的阻挡层提供改进的整体通孔导电性。

公开(公告)号：US20050272254A1

公开(公告)日：2005-12-08

申请号：US11184404

申请日：2005-07-18

申请人： Peijun Ding ,  Zheng Xu ,  Hong Zhang ,  Xianmin Tang ,  Praburam Gopalraja ,  Suraj Rengarajan ,  John Forster ,  Jianming Fu ,  Tony Chiang ,  Gongda Yao ,  Fusen Chen ,  Barry Chin ,  Gene Kohara

发明人： Peijun Ding ,  Zheng Xu ,  Hong Zhang ,  Xianmin Tang ,  Praburam Gopalraja ,  Suraj Rengarajan ,  John Forster ,  Jianming Fu ,  Tony Chiang ,  Gongda Yao ,  Fusen Chen ,  Barry Chin ,  Gene Kohara

IPC分类号： C23C14/06 ,  C23C14/16 ,  C23C14/32 ,  H01L21/285 ,  H01L21/44 ,  H01L21/4763 ,  H01L21/768

CPC分类号： H01L21/02183 ,  C23C14/0641 ,  C23C14/165 ,  C23C14/541 ,  C23C14/5806 ,  H01L21/02266 ,  H01L21/2855 ,  H01L21/318 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/76862 ,  H01L21/76876

摘要： We have discovered a method of providing a thin approximately from about 2 Å to about 100 Å thick TaN seed layer, which can be used to induce the formation of alpha tantalum when tantalum is deposited over the TaN seed layer. Further, the TaN seed layer exhibits low resistivity, in the range of 30 μΩ cm and can be used as a low resistivity barrier layer in the absence of an alpha tantalum layer. In one embodiment of the method, a TaN film is altered on its surface form the TaN seed layer. In another embodiment of the method, a Ta film is altered on its surface to form the TaN seed layer.

摘要翻译： 我们已经发现了一种提供大约约2埃至大约100埃的Ta N种子层的薄膜的方法，当钽沉积在Ta上时可用于诱导形成α钽， SUB> N 种子层。 此外，Ta N N种子层在30μΩ·cm的范围内显示低电阻率，并且可以在不存在α钽层的情况下用作低电阻率阻挡层。 在该方法的一个实施方案中，TaN膜在其表面上形成Ta N N种子层。 在该方法的另一个实施方案中，在其表面上改变Ta膜以形成Ta N N种子层。