公开(公告)号：US20110139249A1

公开(公告)日：2011-06-16

申请号：US12965800

申请日：2010-12-10

Applicant: James David Garnett ,  Peter Dingus ,  Shumin Wang

Inventor： James David Garnett ,  Peter Dingus ,  Shumin Wang

IPC: H01L31/0264 ,  H01L31/0256

CPC classification number: H01L21/02422 ,  H01L21/0248 ,  H01L21/02502 ,  H01L21/02562 ,  H01L21/02573 ,  H01L21/02631 ,  H01L31/03925 ,  H01L31/065 ,  H01L31/073 ,  H01L31/075 ,  H01L31/1828 ,  H01L31/1832 ,  H01L31/1836 ,  Y02E10/543 ,  Y02E10/548

Abstract: Solar cell structures formed using molecular beam epitaxy (MBE) that can achieve improved power efficiencies in relation to prior art thin film solar cell structures are provided. A reverse p-n junction solar cell device and methods for forming the reverse p-n junction solar cell device using MBE are described. A variety of n-p junction and reverse p-n junction solar cell devices and related methods of manufacturing are provided. N-intrinsic-p junction and reverse p-intrinsic-n junction solar cell devices are also described.

Abstract translation: 提供了使用分子束外延（MBE）形成的太阳能电池结构，其可以实现相对于现有技术的薄膜太阳能电池结构提高的功率效率。 描述了使用MBE形成反向p-n结太阳能电池器件的反向p-n结太阳能电池器件和方法。 提供各种n-p结和反向p-n结太阳能电池器件及其制造方法。 还描述了N本征-P结和反向p-本征n结太阳能电池器件。

公开(公告)号：US07021993B2

公开(公告)日：2006-04-04

申请号：US10198841

申请日：2002-07-19

Applicant: Jian Zhang ,  Fred Sun ,  Shumin Wang ,  Isaac K. Cherian ,  Eric H. Klingenberg

Inventor： Jian Zhang ,  Fred Sun ,  Shumin Wang ,  Isaac K. Cherian ,  Eric H. Klingenberg

IPC: B24B1/00

CPC classification number: C09K3/1463 ,  B24B37/00 ,  H01L21/3212

Abstract: The invention provides a method of polishing a substrate comprising (i) contacting a substrate with a polishing system comprising (a) an abrasive, a polishing pad, a means for oxidizing a substrate, or any combination thereof, (b) a conducting polymer having an electrical conductivity of about 10−10 S/cm to about 106 S/cm, and (c) a liquid carrier, and (ii) abrading or removing at least a portion of the substrate to polish the substrate.

Abstract translation: 本发明提供一种抛光衬底的方法，其包括（i）使衬底与抛光系统接触，所述抛光系统包括（a）研磨剂，抛光垫，用于氧化衬底的装置或其任何组合，（b）导电聚合物，其具有 约10 -6 S / cm至约10 -6 S / cm的电导率，和（c）液体载体，和（ii）至少研磨或除去 衬底的一部分以抛光衬底。

公开(公告)号：US06984588B2

公开(公告)日：2006-01-10

申请号：US10694408

申请日：2003-10-27

Applicant: Gautam S. Grover ,  Brian L. Mueller ,  Shumin Wang

Inventor： Gautam S. Grover ,  Brian L. Mueller ,  Shumin Wang

IPC: H01L21/302

CPC classification number: C09K3/1463 ,  C09G1/02 ,  H01L21/31053

Abstract: A chemical mechanical polishing composition comprising a soluble cerium compound at a pH above 3 and a method to selectively polish a silicon oxide overfill in preference to a silicon nitride film layer in a single step during the manufacture of integrated circuits and semiconductors.

Abstract translation: 包含pH高于3的可溶性铈化合物的化学机械抛光组合物以及在制造集成电路和半导体期间在单步中优选氮化硅膜层选择性地抛光氧化硅过量填充的方法。

公开(公告)号：US20050148187A1

公开(公告)日：2005-07-07

申请号：US11033068

申请日：2005-01-10

Applicant: Shumin Wang ,  Vlasta Kaufman

Inventor： Shumin Wang ,  Vlasta Kaufman

IPC: B24B57/02 ,  C09C1/68 ,  C09G1/02 ,  C09K3/14 ,  C23F3/06 ,  H01L21/304 ,  H01L21/321 ,  H01L21/302 ,  H01L21/461

CPC classification number: C23F3/06 ,  C09G1/02 ,  C09K3/1463 ,  H01L21/3212

Abstract: Alpha-amino acid containing chemical mechanical polishing compositions and slurries that are useful for polishing substrates including multiple layers of metals, or metals and dielectrics.

公开(公告)号：US06811474B2

公开(公告)日：2004-11-02

申请号：US10199704

申请日：2002-07-19

Applicant: Isaac K. Cherian ,  Jian Zhang ,  Fred Sun ,  Shumin Wang ,  Eric H. Klingenberg

Inventor： Isaac K. Cherian ,  Jian Zhang ,  Fred Sun ,  Shumin Wang ,  Eric H. Klingenberg

IPC: B24B500

CPC classification number: C09G1/02 ,  H01L21/3212 ,  H01L21/32134

Abstract: The invention provides a polishing system comprising (a) an abrasive, a polishing pad, a means for oxidizing a substrate, or any combination thereof, (b) a conducting polymer having an electrical conductivity of about 10−10 S/cm to about 106 S/cm, and (c) a liquid carrier.

公开(公告)号：US06569350B2

公开(公告)日：2003-05-27

申请号：US10099492

申请日：2002-03-15

Applicant: Vlasta Brusic Kaufman ,  Rodney C. Kistler ,  Shumin Wang

Inventor： Vlasta Brusic Kaufman ,  Rodney C. Kistler ,  Shumin Wang

IPC: C09K1300

CPC classification number: C23F3/06 ,  C09G1/02 ,  C23F3/00 ,  H01L21/3212

Abstract: A chemical mechanical polishing slurry comprising a film forming agent, urea hydrogen peroxide, a complexing agent, an abrasive, and an optional surfactant, as well as a method for using the chemical mechanical polishing slurry to remove copper alloy, titanium, and titanium nitride containing layers from a substrate.

公开(公告)号：US06435947B2

公开(公告)日：2002-08-20

申请号：US09766750

申请日：2001-01-22

Applicant: Brian L. Mueller ,  Shumin Wang

Inventor： Brian L. Mueller ,  Shumin Wang

IPC: B24B100

CPC classification number: B24B37/24 ,  B24D3/34 ,  C09G1/02 ,  C09K3/1463 ,  H01L21/3212

Abstract: A polishing pad comprising a polishing pad substrate and at least one solid catalyst, the polishing pad being useful to remove metal layers from a substrate.

Abstract translation: 一种抛光垫，包括抛光垫基材和至少一种固体催化剂，所述抛光垫可用于从基底去除金属层。

公开(公告)号：US06395693B1

公开(公告)日：2002-05-28

申请号：US09405249

申请日：1999-09-27

Applicant: Shumin Wang

Inventor： Shumin Wang

IPC: C11D330

CPC classification number: H01L21/02074 ,  C11D1/46 ,  C11D7/3209 ,  C11D7/3218 ,  C11D7/36 ,  C11D11/0047

Abstract: A composition and method are provided for cleaning contaminants from the surface of a semiconductor wafer after the wafer has been chemically-mechanically polished. The cleaning composition comprises a carboxylic acid, an amine-containing compound, a phosphonic acid, and water. The cleaning composition is useful in removing abrasive remnants as well as metal contaminants from the surface of a semiconductor wafer following chemical-mechanical polishing.

Abstract translation: 提供了一种组合物和方法，用于在晶片经过化学机械抛光之后从半导体晶片的表面清洗污染物。 清洁组合物包含羧酸，含胺化合物，膦酸和水。 清洁组合物可用于在化学机械抛光后从半导体晶片的表面除去磨损残余物以及金属污染物。

公开(公告)号：US06362106B1

公开(公告)日：2002-03-26

申请号：US09660847

申请日：2000-09-13

Applicant: Vlasta Brusic Kaufman ,  Rodney C. Kistler ,  Shumin Wang

Inventor： Vlasta Brusic Kaufman ,  Rodney C. Kistler ,  Shumin Wang

IPC: H01L21302

CPC classification number: C23F3/06 ,  C09G1/02 ,  C23F3/00 ,  H01L21/3212

Abstract: A chemical mechanical polishing slurry comprising a film forming agent, urea hydrogen peroxide, a complexing agent, an abrasive, and an optional surfactant, as well as a method for using the chemical mechanical polishing slurry to remove copper alloy, titanium, and titanium nitride containing layers from a substrate.

Abstract translation: 包含成膜剂，尿素过氧化氢，络合剂，研磨剂和任选的表面活性剂的化学机械抛光浆料，以及使用化学机械抛光浆料去除含铜合金，钛和氮化钛的方法 层。

公开(公告)号：US06347978B1

公开(公告)日：2002-02-19

申请号：US09425473

申请日：1999-10-22

Applicant: Mingming Fang ,  Christopher C. Streinz ,  Shumin Wang

Inventor： Mingming Fang ,  Christopher C. Streinz ,  Shumin Wang

IPC: B24B100

CPC classification number: G11B23/505 ,  B24B37/044

Abstract: A method for polishing computer rigid disks comprising bringing at least one surface of the rigid disk into contact with a polishing pad and applying a composition to the rigid disk comprising at least one hydroxylamine additive and colloidal silica to give a polished rigid disk.

Abstract translation: 一种用于抛光计算机刚性盘的方法，包括使刚性盘的至少一个表面与抛光垫接触并将组合物施加到包含至少一种羟胺添加剂和胶体二氧化硅的刚性盘中，以得到抛光刚性盘。