摘要:
A magnetostrictive torque sensor having: a rotating shaft to rotate around a center axis, the rotating shaft having magnetostrictive characteristics; and a cylindrical magnetic core disposed at a predetermined distance on an outer periphery of the rotating shaft, the cylindrical magnetic core having a detection coil disposed on an inner periphery thereof to detect a torque applied to the rotating shaft. The detection coil is formed with a coil assembly to form a bridged circuit, and the coil assembly is formed with a flexible substrate coil disposed on a whole inner periphery of the magnetic core.
摘要:
A torque sensor 1 is provided with two shafts 3, 4 (input shaft 3 and output shaft 4) which constitute a shaft member 2, which is a torque detection object, an elastic member 5 which connects the shafts 3 and 4 coaxially, and a torsion angle of the elastic member 5 is detected as a torque which affects on the shaft member 2. The torque sensor 1 is provided with a hard magnetic member 6 which generates a magnetic flux therearound, a pair of first soft magnetic members 7, 8 which constitute a first magnetic circuit H1 together with the hard magnetic member 6 to change a reluctance by torsion of the elastic member 5, a pair of second soft magnetic members 9, 10 which constitute a second magnetic circuit H2 together with the hard magnetic member 6 to keep the reluctance constant, and a flux detection means 12 which detects a flux density of the second magnetic circuit H2 that varies in accordance with a torsion angle of the elastic member 5.
摘要:
The present invention includes: a first main waveguide 1; a T-branch circuit 3 connected thereto; a first low-pass filter 5 connected thereto; a band-pass filter 7 connected to the first T-branch circuit 3; a first converter 8 connected to the first low-pass filter 5 for converting transmission lines between a waveguide and a microwave integrated circuit; an amplifier 10 connected to the first converter and structured by the microwave integrated circuit; a second converter 9 connected thereto for converting transmission lines between a waveguide and the microwave integrated circuit; a second low-pass filter 6 connected thereto; a second T-branch circuit 4 connected to the second low-pass filter and the band-pass filter 7; and a second main waveguide 2 connected to the second T-branch circuit.
摘要:
A divider 3 for dividing and distributing a high-frequency signal input from an input terminal 1 to two output sides, a main amplifying unit 4, connected to one output side of the divider 3, for amplifying one high-frequency signal output from the divider 3, a subsidiary amplifying unit 5, connected to the other output side of the divider 3, for performing no operation in case of a low instantaneous electric power of the other high-frequency signal output from the divider 3 and amplifying the other high-frequency signal in case of a high instantaneous electric power of the other high-frequency signal and a circulator 6 for injecting the high-frequency signal amplified in the subsidiary amplifying unit 5 into the output side of the main amplifying unit 4 and injecting the high-frequency signal amplified in the main amplifying unit 4 into an output terminal 2 are arranged.
摘要:
A high-frequency amplifying unit 2 in which a steep gain variation developed according to a change in the amplitude of input high-frequency signal is suppressed is provided. It amplifies an input high-frequency signal with a plurality of transistors 12-1 to 12-N at the same time a measuring circuit 27 measures amplitude of the input high-frequency signal, and a bias control circuit 26 continuously controls a bias applied to each transistors 12-1 to 12-N according to the value of amplitude measured by the measuring circuit 27. Thus it is possible to suppress a steep gain variation produced according to a variation in the amplitude of input high-frequency signal.
摘要:
A bias condition of at least one amplifier among amplifiers other than a last-stage amplifier is set in consideration of the relation between an idle current and a saturation current.
摘要:
A process of making a multiple layered structure comprises etching at least partially a portion of dielectric material above a fuse upon etching at least one hole to establish electrical interconnection between the adjacent two wiring layers separated by the dielectric material. After forming a protective film, a portion of the protective film above the fuse is etched upon etching at least one aperture to expose a pad of one of the wiring layers underneath the protective film. The remaining material above the fuse is removed by etching using the same mask as etching the at least one aperture through the protective film. Electrical testing is conducted using an electrical probe at the pad. In response to result of the electrical testing, laser energy is focused to a target fuse.
摘要:
The invention provides N-phenyltetrahydrophthalamic acid derivatives represented by the general formula �I!, methods of producing the same, herbicides containing the same as the effective components, imidoylchloride derivatives as the intermediate products and methods of producing the same, ##STR1## wherein X and Y each individually represent hydrogen atoms or halogen atoms, R.sup.1 represents a lower alkoxycarbonylalkylthio group, R.sup.2 represents a lower alkyl group, a halogenated lower alkyl group or a substituted or unsubstituted phenyl group, and R.sup.3 represents a lower alkoxy group, a lower alkenyloxy group, a lower alkynyloxy group, or a lower alkoxyalkoxy group. The herbicides of the present invention, which are very useful, can be widely applied to upland, paddy field, orchard, turf, forest, non-crop land, etc., and are not harmful to crops.
摘要:
In a semiconductor device and a method for manufacturing the same according to the present invention, for example, an insulating film is deposited on a silicon substrate, and a concave groove is formed in the insulating film in accordance with a predetermined wiring pattern. Titanium and palladium are deposited in sequence on the insulating film to form a titanium film and a palladium film, respectively. A silver film is formed on the palladium film by electroplating, and a groove-shaped silver wiring layer is formed by polishing. The resultant structure is annealed at a temperature of about 700.degree. C., and an intermetallic compound is formed by alloying the titanium film and palladium film with each other. Consequently, a burying type wiring layer whose resistance is lower than that of aluminum, is constituted by the silver wiring layer and intermetallic compound.
摘要:
A workpiece such as a semiconductor wafer is positioned between a turntable and a top ring and polished by an abrasive cloth on the turntable while the top ring is being pressed against the turntable. The top ring has a retaining ring for preventing the workpiece from deviating from the lower surface of the top ring, and the retaining ring has an inside diameter larger than an outside diameter of the workpiece. The rotation of the turntable imparts a pressing force in a direction parallel to the upper surface of the turntable to the workpiece so that an outer periphery of the workpiece contacts an inner periphery of the retaining ring, and the rotation of the retaining ring imparts a rotational force to the workpiece so that the workpiece performs a planetary motion relative to the top ring in the retaining ring.