High-frequency amplifier
    7.
    发明授权
    High-frequency amplifier 失效
    高频放大器

    公开(公告)号:US06750720B1

    公开(公告)日:2004-06-15

    申请号:US10149390

    申请日:2002-06-12

    IPC分类号: H03F304

    摘要: Between resistors 13, 14 and an NPN bipolar transistor 12 are interposed PNP bipolar transistors 21, 22 forming a current mirror 20 that uses a collector current of the NPN bipolar transistor 12 as a reference current, and determines a collector current of an NPN bipolar transistor 11. This makes possible to design a size ratio A of the PNP bipolar transistors 21, 22 so as to approximate a voltage drop &Dgr;Vb to a value close to zero, and to suppress the voltage drop &Dgr;Vb of the base voltage Vb accordingly to achieve a high power output and high efficiency when a high frequency input signal Pin increases and generates a base rectified current.

    摘要翻译: 在电阻器13,14和NPN双极晶体管12之间插入形成使用NPN双极晶体管12的集电极电流作为参考电流的电流镜20的PNP双极晶体管21,22,并且确定NPN双极晶体管的集电极电流 这使得可以设计PNP双极晶体管21,22的尺寸比A,以将电压降ΔVV近似为接近于零的值,并且相应地抑制基极电压Vb的电压降DeltaVb以实现 当高频输入信号Pin增加并产生基极整流电流时,高功率输出和高效率。

    High-frequency semiconductor device
    8.
    发明授权
    High-frequency semiconductor device 有权
    高频半导体器件

    公开(公告)号:US06861906B2

    公开(公告)日:2005-03-01

    申请号:US10204446

    申请日:2001-05-11

    摘要: A high-frequency semiconductor device according to the present invention achieves improvements in degradation of noise characteristics and a reduction in gain, and an improvement in reduction in power efficiency while suppressing a concentration of a current to multifinger HBTs. In the multifinger HBTs constituting a first stage and an output stage of an amplifier 10, basic HBTs 14 that constitute the multifinger HBT 12 corresponding to the first stage, are each made up of an HBT 14a and an emitter resistor 14b connected to the corresponding emitter of the HBT 14a, whereas basic HBTs 18 that constitute the multifinger HBT 16 corresponding to the output stage, are each comprised of an HBT 18a and a base resistor 18c connected to the corresponding base of the HBT 18a. The high-frequency semiconductor device according to the present invention is useful as a high output power amplifier used in satellite communications, ground microwave communications, mobile communications, etc.

    摘要翻译: 根据本发明的高频半导体器件实现了噪声特性的降低和增益的降低的改善,并且在抑制电流到多焦HBT的浓度的同时,提高了功率效率的降低。 在构成放大器10的第一级和输出级的多画面HBT中,构成对应于第一级的多画面HBT 12的基本HBT 14分别由连接到相应发射极的HBT 14a和发射极电阻14b组成 而构成与输出级相对应的多功能HBT16的基本HBT 18分别由连接到HBT 18a的相应基座的HBT 18a和基极电阻18c组成。 根据本发明的高频半导体器件可用作卫星通信,地面微波通信,移动通信等中使用的高输出功率放大器。