公开(公告)号：US08841708B2

公开(公告)日：2014-09-23

申请号：US13468332

申请日：2012-05-10

申请人： Donald R. Disney ,  Richard J. Brown ,  Hui Nie

发明人： Donald R. Disney ,  Richard J. Brown ,  Hui Nie

IPC分类号： H01L29/808

CPC分类号： H01L29/41741 ,  H01L29/2003 ,  H01L29/42316 ,  H01L29/66446 ,  H01L29/8083

摘要： A semiconductor device includes a III-nitride substrate and a channel structure coupled to the III-nitride substrate. The channel structure comprises a first III-nitride epitaxial material and is characterized by one or more channel sidewalls. The semiconductor device also includes a source region coupled to the channel structure. The source region comprises a second III-nitride epitaxial material. The semiconductor device further includes a III-nitride gate structure coupled to the one or more channel sidewalls, a gate metal structure in electrical contact with the III-nitride gate structure, and a dielectric layer overlying at least a portion of the gate metal structure. A top surface of the dielectric layer is substantially co-planar with a top surface of the source region.

摘要翻译： 半导体器件包括III族氮化物衬底和耦合到III族氮化物衬底的沟道结构。 沟道结构包括第一III族氮化物外延材料，其特征在于一个或多个沟道侧壁。 半导体器件还包括耦合到沟道结构的源极区域。 源区包括第二III族氮化物外延材料。 所述半导体器件还包括耦合到所述一个或多个沟道侧壁的III族氮化物栅极结构，与所述III族氮化物栅极结构电接触的栅极金属结构以及覆盖所述栅极金属结构的至少一部分的介电层。 电介质层的顶表面与源区的顶表面基本上共面。

公开(公告)号：US08698164B2

公开(公告)日：2014-04-15

申请号：US13315720

申请日：2011-12-09

申请人： Donald R. Disney ,  Hui Nie ,  Isik C. Kizilyalli ,  Richard J. Brown

发明人： Donald R. Disney ,  Hui Nie ,  Isik C. Kizilyalli ,  Richard J. Brown

IPC分类号： H01L29/808 ,  H01L21/335

CPC分类号： H01L29/8083 ,  H01L29/0623 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/66446 ,  H01L29/66462 ,  H01L29/66909 ,  H01L29/66924

摘要： A semiconductor structure includes a GaN substrate with a first surface and a second surface. The GaN substrate is characterized by a first conductivity type and a first dopant concentration. A first electrode is electrically coupled to the second surface of the GaN substrate. The semiconductor structure further includes a first GaN epitaxial layer of the first conductivity type coupled to the first surface of the GaN substrate and a second GaN layer of a second conductivity type coupled to the first GaN epitaxial layer. The first GaN epitaxial layer comprises a channel region. The second GaN epitaxial layer comprises a gate region and an edge termination structure. A second electrode coupled to the gate region and a third electrode coupled to the channel region are both disposed within the edge termination structure.

摘要翻译： 半导体结构包括具有第一表面和第二表面的GaN衬底。 GaN衬底的特征在于第一导电类型和第一掺杂剂浓度。 第一电极电耦合到GaN衬底的第二表面。 半导体结构还包括耦合到GaN衬底的第一表面的第一导电类型的第一GaN外延层和耦合到第一GaN外延层的第二导电类型的第二GaN层。 第一GaN外延层包括沟道区。 第二GaN外延层包括栅极区域和边缘端接结构。 耦合到栅极区域的第二电极和耦合到沟道区域的第三电极都设置在边缘端接结构内。

公开(公告)号：US20140045306A1

公开(公告)日：2014-02-13

申请号：US13571743

申请日：2012-08-10

申请人： David P. Bour ,  Thomas R. Prunty ,  Hui Nie ,  Madhan M. Raj

发明人： David P. Bour ,  Thomas R. Prunty ,  Hui Nie ,  Madhan M. Raj

IPC分类号： H01L21/337 ,  H01L21/329

CPC分类号： H01L29/66143 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02634 ,  H01L21/02639 ,  H01L21/02642 ,  H01L21/02647 ,  H01L21/30612 ,  H01L21/3086 ,  H01L29/0619 ,  H01L29/2003 ,  H01L29/66121 ,  H01L29/66446 ,  H01L29/66462 ,  H01L29/868 ,  H01L29/872

摘要： A method of regrowing material includes providing a III-nitride structure including a masking layer and patterning the masking layer to form an etch mask. The method also includes removing, using an in-situ etch, a portion of the III-nitride structure to expose a regrowth region and regrowing a III-nitride material in the regrowth region.

摘要翻译： 再生材料的方法包括提供包括掩模层的III族氮化物结构，并且图案化掩模层以形成蚀刻掩模。 该方法还包括使用原位蚀刻去除III族氮化物结构的一部分以暴露再生区域并在再生长区域中再生长III族氮化物材料。

公开(公告)号：US08569153B2

公开(公告)日：2013-10-29

申请号：US13307108

申请日：2011-11-30

申请人： David P. Bour ,  Thomas R. Prunty ,  Linda Romano ,  Richard J. Brown ,  Isik C. Kizilyalli ,  Hui Nie

发明人： David P. Bour ,  Thomas R. Prunty ,  Linda Romano ,  Richard J. Brown ,  Isik C. Kizilyalli ,  Hui Nie

IPC分类号： H01L21/20 ,  H01L21/337

CPC分类号： H01L21/02636 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L29/2003 ,  H01L29/207 ,  H01L29/66212 ,  H01L29/66446

摘要： A method of growing an n-type III-nitride-based epitaxial layer includes providing a substrate in an epitaxial growth reactor, forming a masking material coupled to a portion of a surface of the substrate, and flowing a first gas into the epitaxial growth reactor. The first gas includes a group III element and carbon. The method further comprises flowing a second gas into the epitaxial growth reactor. The second gas includes a group V element, and a molar ratio of the group V element to the group III element is at least 5,000. The method also includes growing the n-type III-nitride-based epitaxial layer.

摘要翻译： 生长n型III族氮化物基外延层的方法包括在外延生长反应器中提供衬底，形成耦合到衬底表面的一部分的掩模材料，并将第一气体流入外延生长反应器 。 第一种气体包括III族元素和碳。 该方法还包括使第二气体流入外延生长反应器。 第二气体包括V族元素，V族元素与III族元素的摩尔比为至少5,000。 该方法还包括生长n型III族氮化物基外延层。

公开(公告)号：US08502234B2

公开(公告)日：2013-08-06

申请号：US13289219

申请日：2011-11-04

申请人： Isik C. Kizilyalli ,  Hui Nie ,  Andrew P. Edwards ,  Linda Romano ,  David P. Bour ,  Richard J. Brown ,  Thomas R. Prunty

发明人： Isik C. Kizilyalli ,  Hui Nie ,  Andrew P. Edwards ,  Linda Romano ,  David P. Bour ,  Richard J. Brown ,  Thomas R. Prunty

IPC分类号： H01L31/0256 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109

CPC分类号： H01L29/66909 ,  H01L21/823487 ,  H01L27/0605 ,  H01L27/0611 ,  H01L27/0629 ,  H01L27/0727 ,  H01L27/098 ,  H01L29/2003 ,  H01L29/66143 ,  H01L29/8083 ,  H01L29/872

摘要： An integrated device including a vertical III-nitride FET and a Schottky diode includes a drain comprising a first III-nitride material, a drift region comprising a second III-nitride material coupled to the drain and disposed adjacent to the drain along a vertical direction, and a channel region comprising a third III-nitride material coupled to the drift region. The integrated device also includes a gate region at least partially surrounding the channel region, a source coupled to the channel region, and a Schottky contact coupled to the drift region. The channel region is disposed between the drain and the source along the vertical direction such that current flow during operation of the vertical III-nitride FET and the Schottky diode is along the vertical direction.

公开(公告)号：US20130032813A1

公开(公告)日：2013-02-07

申请号：US13198661

申请日：2011-08-04

申请人： Isik C. Kizilyalli ,  Hui Nie ,  Andrew P. Edwards ,  Linda Romano ,  David P. Bour ,  Richard J. Brown ,  Thomas R. Prunty

发明人： Isik C. Kizilyalli ,  Hui Nie ,  Andrew P. Edwards ,  Linda Romano ,  David P. Bour ,  Richard J. Brown ,  Thomas R. Prunty

IPC分类号： H01L29/20 ,  H01L21/20

CPC分类号： H01L29/66909 ,  H01L21/02538 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/0262 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/66212 ,  H01L29/66893 ,  H01L29/66924 ,  H01L29/8083 ,  H01L29/872

摘要： A method of growing a III-nitride-based epitaxial structure includes providing a substrate in an epitaxial growth reactor and heating the substrate to a predetermined temperature. The method also includes flowing a gallium-containing gas into the epitaxial growth reactor and flowing a nitrogen-containing gas into the epitaxial growth reactor. The method further includes flowing a gettering gas into the epitaxial growth reactor. The predetermined temperature is greater than 1000° C.

摘要翻译： 生长III族氮化物基外延结构的方法包括在外延生长反应器中提供衬底并将衬底加热至预定温度。 该方法还包括将含镓气体流入外延生长反应器并将含氮气体流入外延生长反应器中。 该方法还包括将吸气气体流入外延生长反应器。 预定温度大于1000℃

公开(公告)号：US20120309172A1

公开(公告)日：2012-12-06

申请号：US13118900

申请日：2011-05-31

申请人： Linda T. Romano ,  David P. Bour ,  Richard J. Brown ,  Andrew P. Edwards ,  Isik C. Kizilyalli ,  Hui Nie ,  Thomas R. Prunty

发明人： Linda T. Romano ,  David P. Bour ,  Richard J. Brown ,  Andrew P. Edwards ,  Isik C. Kizilyalli ,  Hui Nie ,  Thomas R. Prunty

IPC分类号： H01L21/20

CPC分类号： H01L21/2654 ,  H01L21/02002 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/02664 ,  H01L33/0079

摘要： A method of reusing a III-nitride growth substrate according to embodiments of the invention includes epitaxially growing a III-nitride semiconductor structure on a III-nitride substrate. The III-nitride semiconductor structure includes a sacrificial layer and an additional layer grown over the sacrificial layer. The sacrificial layer is implanted with at least one implant species. The III-nitride substrate is separated from the additional layer at the implanted sacrificial layer. In some embodiments the III-nitride substrate is GaN and the sacrificial layer is GaN, an aluminum-containing III-nitride layer, or an indium-containing III-nitride layer. In some embodiments, the III-nitride substrate is separated from the additional layer by etching the implanted sacrificial layer.

摘要翻译： 根据本发明的实施例的重新使用III族氮化物生长衬底的方法包括在III族氮化物衬底上外延生长III族氮化物半导体结构。 III族氮化物半导体结构包括在牺牲层上生长的牺牲层和附加层。 牺牲层植入至少一种植入物种。 在注入的牺牲层处将III族氮化物衬底与附加层分离。 在一些实施例中，III族氮化物衬底是GaN，牺牲层是GaN，含铝的III族氮化物层或含铟的III族氮化物层。 在一些实施例中，通过蚀刻注入的牺牲层将III族氮化物衬底与附加层分离。

公开(公告)号：US09136116B2

公开(公告)日：2015-09-15

申请号：US13198666

申请日：2011-08-04

申请人： David P. Bour ,  Thomas R. Prunty ,  Linda Romano ,  Andrew P. Edwards ,  Isik C. Kizilyalli ,  Hui Nie ,  Richard J. Brown ,  Mahdan Raj

发明人： David P. Bour ,  Thomas R. Prunty ,  Linda Romano ,  Andrew P. Edwards ,  Isik C. Kizilyalli ,  Hui Nie ,  Richard J. Brown ,  Mahdan Raj

IPC分类号： H01L21/20 ,  H01L21/02 ,  H01L29/66 ,  H01L29/861 ,  H01L29/808 ,  H01L29/20

CPC分类号： H01L29/2003 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/02639 ,  H01L21/02647 ,  H01L21/2255 ,  H01L29/207 ,  H01L29/30 ,  H01L29/36 ,  H01L29/66204 ,  H01L29/8083 ,  H01L29/8611

摘要： A semiconductor device includes a III-nitride substrate having a first conductivity type and a first electrode electrically coupled to the III-nitride substrate. The semiconductor device also includes a III-nitride material having a second conductivity type coupled to the III-nitride substrate at a regrowth interface and a p-n junction disposed between the III-nitride substrate and the regrowth interface.

摘要翻译： 半导体器件包括具有第一导电类型的III族氮化物衬底和与III族氮化物衬底电耦合的第一电极。 半导体器件还包括具有第二导电类型的III族氮化物材料，其在再生界面处与III族氮化物衬底耦合，并且p-n结设置在III族氮化物衬底和再生长界面之间。

公开(公告)号：US08969994B2

公开(公告)日：2015-03-03

申请号：US13585121

申请日：2012-08-14

申请人： Madhan M. Raj ,  Brian Alvarez ,  David P. Bour ,  Andrew P. Edwards ,  Hui Nie ,  Isik C. Kizilyalli

发明人： Madhan M. Raj ,  Brian Alvarez ,  David P. Bour ,  Andrew P. Edwards ,  Hui Nie ,  Isik C. Kizilyalli

IPC分类号： H01L29/47 ,  H01L29/15 ,  H01L29/861 ,  H01L21/36

CPC分类号： H01L29/66143 ,  H01L21/0254 ,  H01L21/02664 ,  H01L29/0619 ,  H01L29/2003 ,  H01L29/66121 ,  H01L29/66212 ,  H01L29/872

摘要： An MPS diode includes a III-nitride substrate characterized by a first conductivity type and a first dopant concentration and having a first side and a second side. The MPS diode also includes a III-nitride epitaxial structure comprising a first III-nitride epitaxial layer coupled to the first side of the substrate, wherein a region of the first III-nitride epitaxial layer comprises an array of protrusions. The III-nitride epitaxial structure also includes a plurality of III-nitride regions of a second conductivity type, each partially disposed between adjacent protrusions. Each of the plurality of III-nitride regions of the second conductivity type comprises a first section laterally positioned between adjacent protrusions and a second section extending in a direction normal to the first side of the substrate. The MPS diode further includes a first metallic structure electrically coupled to one or more of the protrusions and to one or more of the second sections.

摘要翻译： MPS二极管包括以第一导电类型和第一掺杂剂浓度为特征的III族氮化物衬底，其具有第一侧和第二侧。 MPS二极管还包括III族氮化物外延结构，其包括耦合到衬底的第一侧的第一III族氮化物外延层，其中第一III族氮化物外延层的区域包括突起阵列。 III族氮化物外延结构还包括多个第二导电类型的III族氮化物区域，每个部分设置在相邻的突起之间。 第二导电类型的多个III族氮化物区域中的每一个包括横向位于相邻突起之间的第一部分和沿着垂直于衬底的第一侧的方向延伸的第二部分。 MPS二极管还包括电耦合到一个或多个突起和一个或多个第二部分的第一金属结构。

公开(公告)号：US08822311B2

公开(公告)日：2014-09-02

申请号：US13335329

申请日：2011-12-22

申请人： Isik C. Kizilyalli ,  Hui Nie ,  Andrew P. Edwards ,  Richard J. Brown ,  Donald R. Disney

发明人： Isik C. Kizilyalli ,  Hui Nie ,  Andrew P. Edwards ,  Richard J. Brown ,  Donald R. Disney

IPC分类号： H01L29/20 ,  H01L29/24

CPC分类号： H01L29/868 ,  H01L29/0615 ,  H01L29/0649 ,  H01L29/2003 ,  H01L29/66204 ,  H01L29/66212 ,  H01L29/6631 ,  H01L29/66924

摘要： A III-nitride semiconductor device includes an active region for supporting current flow during forward-biased operation of the III-nitride semiconductor device. The active region includes a first III-nitride epitaxial material having a first conductivity type, and a second III-nitride epitaxial material having a second conductivity type. The III-nitride semiconductor device further includes an edge-termination region physically adjacent to the active region and including an implanted region comprising a portion of the first III-nitride epitaxial material. The implanted region of the first III-nitride epitaxial material has a reduced electrical conductivity in relation to portions of the first III-nitride epitaxial material adjacent to the implanted region.

摘要翻译： III族氮化物半导体器件包括用于在III族氮化物半导体器件的正向偏置操作期间支持电流的有源区域。 有源区包括具有第一导电类型的第一III族氮化物外延材料和具有第二导电类型的第二III族氮化物外延材料。 III族氮化物半导体器件还包括物理地邻近有源区的边缘终端区，并且包括包含第一III族氮化物外延材料的一部分的注入区。 第一III族氮化物外延材料的注入区域相对于与注入区域相邻的第一III族氮化物外延材料的部分具有降低的导电性。