公开(公告)号：US4484514A

公开(公告)日：1984-11-27

申请号：US471032

申请日：1983-03-01

申请人： Chia-Jen Chen

发明人： Chia-Jen Chen

IPC分类号： A47J31/043 ,  A47J31/053

CPC分类号： A47J31/043 ,  A47J31/053

摘要： A brewing device for either coffee or tea have a water pot bottomed with a base accomodating a heating element and a temperature-sensitive switch connected electrically therewith, by which applying heat to the water pot when being energized and cutting off the source of power at predetermined temperature, and a receiver for coffee grinds or tea to be brewed being disposed by the side of the pot. A U-shaped tube provided between the pot and the receiver having a first leg extended through an first aperture provided in the first lid and a second leg extended through a second aperture provided in the second lid, the former is gas tight sealed with the wall defining the first aperture but on the contrary, there is sufficient opening left between the receiver and the wall defining the second aperture. By such arrangement the water contained in the pot will rise in the first leg till reaching the top of the tube and then descend in the second leg to the receiver by the vapor pressure exerted on the water surface during heating until the water in the pot is exhausted, after de-energized, the brewed beverage in the receiver will return through the bridging means to the pot due to the atmospheric pressure.

摘要翻译： 用于咖啡或茶的冲泡装置具有底部的底部，底部包含加热元件的基座和与其电连接的温度敏感开关，通过该底座在通电时向水壶施加热量并且以预定的方式切断电源 温度以及用于咖啡研磨物或茶的接收器被煮制，由锅的一侧设置。 设置在所述锅和所述接收器之间的U形管具有延伸穿过设置在所述第一盖中的第一孔的第一腿部和延伸穿过设置在所述第二盖中的第二孔的第二腿部，所述第一腿部与所述壁部气密密封 限定第一孔，但相反，在接收器和限定第二孔的壁之间有足够的开口。 通过这种布置，容纳在锅中的水将在第一腿中上升直到到达管的顶部，然后在加热期间通过施加在水面上的蒸汽压力将第二腿下降到接收器，直到锅中的水为 在断电后，由于大气压力，接收器中的冲泡饮料将通过桥接装置返回到锅中。

公开(公告)号：US20060081917A1

公开(公告)日：2006-04-20

申请号：US10964841

申请日：2004-10-13

申请人： Chien-Hao Chen ,  Chia-Jen Chen ,  Tze-Liang Lee ,  Chao-Cheng Chen ,  Shih-Chang Chen

发明人： Chien-Hao Chen ,  Chia-Jen Chen ,  Tze-Liang Lee ,  Chao-Cheng Chen ,  Shih-Chang Chen

IPC分类号： H01L29/76

CPC分类号： H01L21/28123 ,  H01L21/0217 ,  H01L21/28035 ,  H01L21/31608 ,  H01L21/3185

摘要： A method for forming a hard mask for gate electrode patterning in a semiconductor device is disclosed. The method includes providing a polysilicon layer to be etched and forming over the polysilicon layer, a nitride hardmask with a relatively high etch rate to hydrofluoric acid, as compared to the etch rate of silicon oxide. The polysilicon can then be patterned using the hardmask and the hardmask can be removed using hydrofluoric acid.

摘要翻译： 公开了一种在半导体器件中形成用于栅电极图案化的硬掩模的方法。 该方法包括提供待蚀刻并在多晶硅层上形成的多晶硅层，与氧化硅的蚀刻速率相比，具有对氢氟酸的蚀刻速率相对较高的氮化物硬掩模。 然后可以使用硬掩模对多晶硅进行图案化，并且可以使用氢氟酸去除硬掩模。

公开(公告)号：US20130187235A1

公开(公告)日：2013-07-25

申请号：US13353975

申请日：2012-01-19

申请人： Yuan-Sheng Huang ,  Tzu-Yen Hsieh ,  Ming-Ching Chang ,  Chao-Cheng Chen ,  Chia-Jen Chen

发明人： Yuan-Sheng Huang ,  Tzu-Yen Hsieh ,  Ming-Ching Chang ,  Chao-Cheng Chen ,  Chia-Jen Chen

IPC分类号： H01L27/092 ,  H01L21/28

CPC分类号： H01L29/66545 ,  H01L21/823807 ,  H01L21/823821 ,  H01L21/823828 ,  H01L27/0924 ,  H01L29/0649 ,  H01L29/66795 ,  H01L29/785

摘要： The present disclosure involves a FinFET. The FinFET includes a fin structure formed over a substrate. A gate dielectric layer is least partially wrapped around a segment of the fin structure. The gate dielectric layer contains a high-k gate dielectric material. The FinFET includes a polysilicon layer conformally formed on the gate dielectric layer. The FinFET includes a metal gate electrode layer formed over the polysilicon layer. The present disclosure provides a method of fabricating a FinFET. The method includes providing a fin structure containing a semiconductor material. The method includes forming a gate dielectric layer over the fin structure, the gate dielectric layer being at least partially wrapped around the fin structure. The method includes forming a polysilicon layer over the gate dielectric layer, wherein the polysilicon layer is formed in a conformal manner. The method includes forming a dummy gate layer over the polysilicon layer.

摘要翻译： 本公开涉及FinFET。 FinFET包括在衬底上形成的翅片结构。 栅介质层最少部分地缠绕在翅片结构的一段上。 栅介质层包含高k栅介质材料。 FinFET包括在栅介质层上共形形成的多晶硅层。 FinFET包括在多晶硅层上形成的金属栅极电极层。 本公开提供了制造FinFET的方法。 该方法包括提供包含半导体材料的翅片结构。 该方法包括在鳍结构上方形成栅极电介质层，栅介质层至少部分地围绕翅片结构缠绕。 该方法包括在栅介质层上形成多晶硅层，其中多晶硅层以保形方式形成。 该方法包括在多晶硅层上形成伪栅极层。

公开(公告)号：US08491825B2

公开(公告)日：2013-07-23

申请号：US12693610

申请日：2010-01-26

申请人： Ming-Fung Lin ,  Hung-Jen Chen ,  Chia-Jen Chen ,  Yung-Chien Chen ,  Chao-Mulan Chen

发明人： Ming-Fung Lin ,  Hung-Jen Chen ,  Chia-Jen Chen ,  Yung-Chien Chen ,  Chao-Mulan Chen

IPC分类号： D01D5/08 ,  D01D5/088 ,  D01D5/12 ,  D01F1/10 ,  D01F6/04 ,  D01F6/06 ,  D03D23/00

CPC分类号： D01F1/103 ,  B01D39/1623 ,  B01D2239/0216 ,  B01D2239/0258 ,  B01D2239/0407 ,  D01F6/04 ,  D01F6/06 ,  D01F6/46 ,  Y10T428/2913 ,  Y10T428/2927 ,  Y10T428/294 ,  Y10T428/2967 ,  Y10T428/2969

摘要： The present invention provides to a method of producing fiber from tourmaline anion fiber; of which, polypropylene or polyethylene chip, TPE and submicrometer tourmaline particle are prepared and then rolled into submicrometer tourmaline agglomerate through granulation by double screw; then, take submicrometer tourmaline agglomerate and polypropylene or polyethylene chip, of which the content of tourmaline agglomerate accounts for 1˜10% of gross weight, and TPE for 1˜40% of gross weight; tourmaline agglomerate and polypropylene or polyethylene are melted into composite fiber or filter material via spinning, such that the fiber or filter material can yield anion and present outstanding gas permeability and mechanical property.

摘要翻译： 本发明提供一种由电气石阴离子纤维制造纤维的方法; 其中制备聚丙烯或聚乙烯芯片，TPE和亚微米电气石颗粒，然后通过双螺杆粉碎成亚微米电气石团聚体; 然后采用亚微米电气石聚集体和聚丙烯或聚乙烯芯片，其中电气石聚集体含量占总重量的1〜10％，TPE占总重量的1〜40％; 电气石聚集体和聚丙烯或聚乙烯通过纺丝熔化成复合纤维或过滤材料，使得纤维或过滤材料可产生阴离子并具有优异的气体渗透性和机械性能。

公开(公告)号：US08231968B2

公开(公告)日：2012-07-31

申请号：US11416155

申请日：2006-05-03

申请人： Ming-Fung Lin ,  Hung-Jen Chen ,  Chia-Jen Chen ,  Yung-Chien Chen ,  Chao-Mulan Chen

发明人： Ming-Fung Lin ,  Hung-Jen Chen ,  Chia-Jen Chen ,  Yung-Chien Chen ,  Chao-Mulan Chen

IPC分类号： D02G3/02 ,  B01D24/00

CPC分类号： D01F1/103 ,  B01D39/1623 ,  B01D2239/0216 ,  B01D2239/0258 ,  B01D2239/0407 ,  D01F6/04 ,  D01F6/06 ,  D01F6/46 ,  Y10T428/2913 ,  Y10T428/2927 ,  Y10T428/294 ,  Y10T428/2967 ,  Y10T428/2969

摘要： The present invention provides to a method of producing fiber from tourmaline anion fiber; of which, polypropylene or polyethylene chip, TPE and submicrometer tourmaline particle are prepared and then rolled into submicrometer tourmaline agglomerate through granulation by double screw; then, take submicrometer tourmaline agglomerate and polypropylene or polyethylene chip, of which the content of tourmaline agglomerate accounts for 1˜10% of gross weight, and TPE for 1˜40% of gross weight; tourmaline agglomerate and polypropylene or polyethylene are melted into composite fiber or filter material via spinning, such that the fiber or filter material can yield anion and present outstanding gas permeability and mechanical property.

摘要翻译： 本发明提供一种由电气石阴离子纤维生产纤维的方法; 其中制备聚丙烯或聚乙烯芯片，TPE和亚微米电气石颗粒，然后通过双螺杆粉碎成亚微米电气石团聚体; 然后，采用亚微米电气石聚集体和聚丙烯或聚乙烯芯片，其中电气石聚集体含量占总重量的1〜10％，TPE占总重量的1〜40％; 电气石聚集体和聚丙烯或聚乙烯通过纺丝熔化成复合纤维或过滤材料，使得纤维或过滤材料可产生阴离子并具有优异的气体渗透性和机械性能。

公开(公告)号：US20120129633A1

公开(公告)日：2012-05-24

申请号：US13297237

申请日：2011-11-15

申请人： Chia-Jen Chen

发明人： Chia-Jen Chen

IPC分类号： A63B69/00

CPC分类号： A63B69/0097

摘要： A sports training device includes a base and at least one net frame assembly. The net frame assembly includes a frame mounted detachably to the base, and a net attached to and surrounded by the frame. The net includes a non-elastic mesh area, and an elastic mesh area connecting the non-elastic mesh area to the frame.

摘要翻译： 运动训练装置包括底座和至少一个网框组件。 网框组件包括可拆卸地安装到基座的框架，以及附接到框架并被框架包围的网。 网包括非弹性网格区域和将非弹性网格区域连接到框架的弹性网格区域。

公开(公告)号：US20070259178A1

公开(公告)日：2007-11-08

申请号：US11416155

申请日：2006-05-03

申请人： Ming-Fung Lin ,  Hung-Jen Chen ,  Chia-Jen Chen ,  Yung-Chien Chen ,  Chao-Mulan Chen

发明人： Ming-Fung Lin ,  Hung-Jen Chen ,  Chia-Jen Chen ,  Yung-Chien Chen ,  Chao-Mulan Chen

IPC分类号： B32B15/00

CPC分类号： D01F1/103 ,  B01D39/1623 ,  B01D2239/0216 ,  B01D2239/0258 ,  B01D2239/0407 ,  D01F6/04 ,  D01F6/06 ,  D01F6/46 ,  Y10T428/2913 ,  Y10T428/2927 ,  Y10T428/294 ,  Y10T428/2967 ,  Y10T428/2969

摘要： The present invention provides to a method of producing fiber from tourmaline anion fiber; of which, polypropylene or polyethylene chip, TPE and submicrometer tourmaline particle are prepared and then rolled into submicrometer tourmaline agglomerate through granulation by double screw; then, take submicrometer tourmaline agglomerate and polypropylene or polyethylene chip, of which the content of tourmaline agglomerate accounts for 1˜10% of gross weight, and TPE for 1˜40% of gross weight; tourmaline agglomerate and polypropylene or polyethylene are melted into composite fiber or filter material via spinning, such that the fiber or filter material can yield anion and present outstanding gas permeability and mechanical property.

摘要翻译： 本发明提供一种由电气石阴离子纤维生产纤维的方法; 其中制备聚丙烯或聚乙烯芯片，TPE和亚微米电气石颗粒，然后通过双螺杆粉碎成亚微米电气石团聚体; 然后采用亚微米电气石聚集体和聚丙烯或聚乙烯芯片，其中电气石聚集体含量占总重量的1〜10％，TPE占总重量的1〜40％; 电气石聚集体和聚丙烯或聚乙烯通过纺丝熔化成复合纤维或过滤材料，使得纤维或过滤材料可产生阴离子并具有优异的气体渗透性和机械性能。

公开(公告)号：US08912610B2

公开(公告)日：2014-12-16

申请号：US13438451

申请日：2012-04-03

申请人： Jr Jung Lin ,  Yun-Ju Sun ,  Shih-Hsun Chang ,  Chia-Jen Chen ,  Tomonari Yamamoto ,  Chih-Wei Kuo ,  Meng-Yi Sun ,  Kuo-Chiang Ting

发明人： Jr Jung Lin ,  Yun-Ju Sun ,  Shih-Hsun Chang ,  Chia-Jen Chen ,  Tomonari Yamamoto ,  Chih-Wei Kuo ,  Meng-Yi Sun ,  Kuo-Chiang Ting

IPC分类号： H01L21/70 ,  H01L21/02 ,  H01L29/66 ,  H01L21/311 ,  H01L29/423 ,  H01L21/3213 ,  H01L21/28 ,  H01L29/78 ,  H01L29/51

CPC分类号： H01L21/0206 ,  H01L21/02071 ,  H01L21/28088 ,  H01L21/28114 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/32136 ,  H01L21/32137 ,  H01L29/42376 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66545 ,  H01L29/6659 ,  H01L29/7848

摘要： The present disclosure provides a semiconductor structure. The semiconductor structure includes a semiconductor substrate; and a gate stack disposed on the semiconductor substrate. The gate stack includes a high k dielectric material layer, a capping layer disposed on the high k dielectric material layer, and a metal layer disposed on the capping layer. The capping layer and the high k dielectric material layer have a footing structure.

摘要翻译： 本公开提供了一种半导体结构。 半导体结构包括半导体衬底; 以及设置在半导体衬底上的栅极堆叠。 栅极堆叠包括高k电介质材料层，设置在高k电介质材料层上的覆盖层和设置在覆盖层上的金属层。 覆盖层和高k电介质材料层具有基础结构。

公开(公告)号：US08651979B2

公开(公告)日：2014-02-18

申请号：US13297237

申请日：2011-11-15

申请人： Chia-Jen Chen

发明人： Chia-Jen Chen

IPC分类号： A63B69/00

CPC分类号： A63B69/0097

摘要： A sports training device includes a base and at least one net frame assembly. The net frame assembly includes a frame mounted detachably to the base, and a net attached to and surrounded by the frame. The net includes a non-elastic mesh area, and an elastic mesh area connecting the non-elastic mesh area to the frame.

摘要翻译： 运动训练装置包括底座和至少一个网框组件。 网框组件包括可拆卸地安装到基座的框架，以及附接到框架并被框架包围的网。 网包括非弹性网格区域和将非弹性网格区域连接到框架的弹性网格区域。