Semiconductor device
    43.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号:US07309895B2

    公开(公告)日:2007-12-18

    申请号:US11043647

    申请日:2005-01-25

    IPC分类号: H01L31/0392

    CPC分类号: H01L29/7869

    摘要: An exemplary embodiment includes a semiconductor device. The semiconductor device can include a channel including one or more compounds of the formula AxBxOx, wherein each A is selected from the group of Cu, Ag, Sb, each B is selected from the group of Cu, Ag, Sb, Zn, Cd, Ga, In, Ge, Sn, and Pb, each O is atomic oxygen, each x is independently a non-zero integer, and each of A and B are different.

    摘要翻译: 示例性实施例包括半导体器件。 半导体器件可以包括通道,其包括一种或多种下式的化合物:其中每个A选自 每个B选自Cu,Ag,Sb,Zn,Cd,Ga,In,Ge,Sn和Pb中的每一个,每个O是原子氧,每个x独立地为非 - 零整数,A和B各自不同。

    Semiconductor devices and methods of making
    44.
    发明授权
    Semiconductor devices and methods of making 有权
    半导体器件及制造方法

    公开(公告)号:US07291522B2

    公开(公告)日:2007-11-06

    申请号:US10975873

    申请日:2004-10-28

    IPC分类号: H01L21/00

    摘要: In one method of forming a semiconductor device, a first electrode is formed electrically coupled with a semiconductor material. After the first electrode is formed, an insulator is formed over the semiconductor material adjoining the first electrode and extending a selected distance from the first electrode. After the insulator is formed, a second electrode is formed electrically coupled with the semiconductor material adjoining the insulator.

    摘要翻译: 在形成半导体器件的一种方法中,第一电极形成为与半导体材料电耦合。 在形成第一电极之后,在与第一电极相邻并且从第一电极延伸选定距离的半导体材料上形成绝缘体。 在形成绝缘体之后,第二电极与邻接绝缘体的半导体材料电耦合。

    Semiconductor device
    46.
    发明申请
    Semiconductor device 有权
    半导体器件

    公开(公告)号:US20060163655A1

    公开(公告)日:2006-07-27

    申请号:US11043647

    申请日:2005-01-25

    IPC分类号: H01L21/84 H01L27/12

    CPC分类号: H01L29/7869

    摘要: An exemplary embodiment includes a semiconductor device. The semiconductor device can include a channel including one or more compounds of the formula AxBxOx, wherein each A is selected from the group of Cu, Ag, Sb, each B is selected from the group of Cu, Ag, Sb, Zn, Cd, Ga, In, Ge, Sn, and Pb, each O is atomic oxygen, each x is independently a non-zero integer, and each of A and B are different.

    摘要翻译: 示例性实施例包括半导体器件。 半导体器件可以包括通道,其包括一种或多种下式的化合物:其中每个A选自 每个B选自Cu,Ag,Sb,Zn,Cd,Ga,In,Ge,Sn和Pb中的每一个,每个O是原子氧,每个x独立地是非 - 零整数,A和B各自不同。

    Semiconductor device
    48.
    发明申请
    Semiconductor device 有权
    半导体器件

    公开(公告)号:US20060043377A1

    公开(公告)日:2006-03-02

    申请号:US11257935

    申请日:2005-10-25

    IPC分类号: H01L29/04

    CPC分类号: H01L29/7869 H01L29/78648

    摘要: A semiconductor device can include a channel including an oxide comprising a combination of isovalent cations selected from within the D block and the P block of the Periodic Table.

    摘要翻译: 半导体器件可以包括包含氧化物的通道,该氧化物包含选自D块内的等价阳离子和周期表的P嵌段的组合。