Semiconductor device
    1.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号:US07772049B2

    公开(公告)日:2010-08-10

    申请号:US11936721

    申请日:2007-11-07

    CPC分类号: H01L29/7869

    摘要: An exemplary embodiment includes a semiconductor device. The semiconductor device can include a channel including one or more compounds of the formula AxBxOx, wherein each A is selected from the group of Cu, Ag, Sb, each B is selected from the group of Cu, Ag, Sb, Zn, Cd, Ga, In, Ge, Sn, and Pb, each O is atomic oxygen, each x is independently a non-zero integer, and each of A and B are different.

    摘要翻译: 示例性实施例包括半导体器件。 半导体器件可以包括一种包含一种或多种式AxBxOx的化合物的通道,其中每个A选自Cu,Ag,Sb,每个B选自Cu,Ag,Sb,Zn,Cd, Ga,In,Ge,Sn和Pb,每个O都是原子氧,每个x独立地是非零整数,并且A和B各自不同。

    Semiconductor device
    3.
    发明申请
    Semiconductor device 有权
    半导体器件

    公开(公告)号:US20050199961A1

    公开(公告)日:2005-09-15

    申请号:US10799961

    申请日:2004-03-12

    IPC分类号: H01L29/786 H01L31/0328

    CPC分类号: H01L29/7869 H01L29/78648

    摘要: One exemplary embodiment includes a semiconductor device. The semiconductor device can include a channel including one or more compounds of the formula AxBxOx wherein each A is selected from the group of Ga, In, each B is selected from the group of Ge, Sn, Pb, each O is atomic oxygen, each x is independently a non-zero integer, and each of A and B are different.

    摘要翻译: 一个示例性实施例包括半导体器件。 半导体器件可以包括通道,其包括一种或多种下式的化合物:其中每个A选自下组: 的Ga,In,每个B选自Ge,Sn,Pb组,每个O是原子氧,每个x独立地是非零整数,并且A和B各自不同。