公开(公告)号：US20070087286A1

公开(公告)日：2007-04-19

申请号：US11542563

申请日：2006-10-03

申请人： Deyan Wang ,  Cheng-Bai Xu

发明人： Deyan Wang ,  Cheng-Bai Xu

IPC分类号： G03C1/00

CPC分类号： G03F7/11 ,  G03F7/095 ,  G03F7/2041 ,  Y10S430/106 ,  Y10S430/108

摘要： Overcoating layer compositions that are applied above a photoresist composition including for immersion lithography processing as well as non-immersion imaging.

摘要翻译： 涂覆在光致抗蚀剂组合物上方的包覆层组合物，包括浸没式光刻处理以及非浸没成像。

公开(公告)号：US20050020068A1

公开(公告)日：2005-01-27

申请号：US10852706

申请日：2004-05-24

申请人： Deyan Wang ,  Robert Mikkola

发明人： Deyan Wang ,  Robert Mikkola

IPC分类号： C25D3/38 ,  C25D5/54 ,  C25D7/12 ,  H01L21/288 ,  H01L21/44 ,  H01L21/768

CPC分类号： H01L21/76843 ,  C25D3/38 ,  C25D5/54 ,  C25D7/123 ,  H01L21/2885 ,  H01L21/76868 ,  H01L21/76873

摘要： Compositions suitable for electroplating copper including one or more sources of copper, one or more alkanolamines or polymeric amines; and water are provided. These compositions are useful in the deposition and repair of seed layers used in the manufacture of electronic devices. Methods using these compositions are also provided.

摘要翻译： 适用于电镀铜的组合物，包括一种或多种铜源，一种或多种链烷醇胺或聚合胺; 并提供水。 这些组合物可用于电子设备制造中使用的种子层的沉积和修复。 还提供了使用这些组合物的方法。

公开(公告)号：US11106137B2

公开(公告)日：2021-08-31

申请号：US13297258

申请日：2011-11-15

申请人： Deyan Wang ,  Cong Liu ,  Mingqi Li ,  Joon Seok Oh ,  Cheng-Bai Xu ,  Doris H. Kang ,  Clark H. Cummins ,  Matthias S. Ober

发明人： Deyan Wang ,  Cong Liu ,  Mingqi Li ,  Joon Seok Oh ,  Cheng-Bai Xu ,  Doris H. Kang ,  Clark H. Cummins ,  Matthias S. Ober

IPC分类号： G03F7/20 ,  G03F7/004 ,  G03F7/039

摘要： New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprise one or more materials that comprise one or more base reactive groups and (i) one or more polar groups distinct from the base reactive groups, and/or (ii) at least one of the base reactive groups is a non-perfluorinated base reactive group. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer during immersion lithography processing.

公开(公告)号：US10359698B2

公开(公告)日：2019-07-23

申请号：US12592156

申请日：2009-11-19

申请人： Deyan Wang ,  Cheng-Bai Xu ,  George G. Barclay

发明人： Deyan Wang ,  Cheng-Bai Xu ,  George G. Barclay

IPC分类号： G03F7/004 ,  G03F7/20 ,  G03F7/038 ,  G03F7/039

摘要： New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprises one or more materials that have hetero-substituted carbocyclic aryl groups. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer during immersion lithography processing.

公开(公告)号：US09244355B2

公开(公告)日：2016-01-26

申请号：US11978910

申请日：2007-10-30

申请人： Stefan J. Caporale ,  George G. Barclay ,  Deyan Wang ,  Li Jia

发明人： Stefan J. Caporale ,  George G. Barclay ,  Deyan Wang ,  Li Jia

IPC分类号： G03F7/26 ,  G03F7/004 ,  G03F7/20 ,  G03F7/039 ,  G03F7/038

CPC分类号： G03F7/2041 ,  G03F7/0046 ,  G03F7/0382 ,  G03F7/0392 ,  G03F7/0397

摘要： New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprise one or more materials having a water contact angle that can be changed by treatment with base and/or one or more materials that comprise fluorinated photoacid-labile groups and/or one or more materials that comprise acidic groups spaced from a polymer backbone. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer during immersion lithography processing.

摘要翻译： 提供了可用于浸没式光刻的新的光致抗蚀剂组合物。 本发明优选的光致抗蚀剂组合物包含具有水接触角的一种或多种材料，其可以通过用碱和/或一种或多种包含氟化光致酸不稳定基团的材料和/或一种或多种包含酸性基团间隔的材料 来自聚合物骨架。 本发明的特别优选的光致抗蚀剂可以在浸没光刻处理期间将抗蚀剂材料的浸出降低到与抗蚀剂层接触的浸没流体中。

公开(公告)号：US08871428B2

公开(公告)日：2014-10-28

申请号：US13602259

申请日：2012-09-03

申请人： Deyan Wang ,  Cheng-Bai Xu ,  George G. Barclay

发明人： Deyan Wang ,  Cheng-Bai Xu ,  George G. Barclay

IPC分类号： G03F7/004 ,  G03F7/20 ,  G03F7/028

CPC分类号： G03F7/2041 ,  C08F220/22 ,  C08F220/24 ,  C08F220/26 ,  G03F7/0046 ,  G03F7/038 ,  G03F7/0392 ,  G03F7/0757 ,  H01L21/0274

摘要： New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprises two or more distinct materials that can be substantially non-mixable with a resin component of the resist. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer during immersion lithography processing.

摘要翻译： 提供了可用于浸没式光刻的新的光致抗蚀剂组合物。 本发明优选的光致抗蚀剂组合物包含两种或多种不同的材料，其可以与抗蚀剂的树脂组分基本上不可混合。 本发明的特别优选的光致抗蚀剂可以在浸没光刻处理期间将抗蚀剂材料的浸出降低到与抗蚀剂层接触的浸没流体中。

公开(公告)号：US08158325B2

公开(公告)日：2012-04-17

申请号：US11542563

申请日：2006-10-03

申请人： Deyan Wang ,  Cheng-Bai Xu

发明人： Deyan Wang ,  Cheng-Bai Xu

IPC分类号： G03F7/004 ,  G03F7/30

CPC分类号： G03F7/11 ,  G03F7/095 ,  G03F7/2041 ,  Y10S430/106 ,  Y10S430/108

摘要： Overcoating layer compositions that are applied above a photoresist composition including for immersion lithography processing as well as non-immersion imaging.

摘要翻译： 涂覆在光致抗蚀剂组合物上方的包覆层组合物，包括浸没式光刻处理以及非浸没成像。

公开(公告)号：US07776506B2

公开(公告)日：2010-08-17

申请号：US11651090

申请日：2007-01-08

申请人： Deyan Wang ,  Peter Trefonas, III ,  Michael K. Gallagher

发明人： Deyan Wang ,  Peter Trefonas, III ,  Michael K. Gallagher

IPC分类号： G03C1/76 ,  G03C1/492 ,  G03C1/494 ,  G03C5/00

CPC分类号： G03F7/11 ,  G03F7/0392 ,  G03F7/2041

摘要： In one aspect, the present invention relates to coating compositions that comprise a resin component, wherein the predominant portion of the resin component comprising one or more resins that are at least substantially free of fluorine. Coating compositions of the invention are useful as photoresist overcoat layers, including in immersion lithography processing.

摘要翻译： 一方面，本发明涉及包含树脂组分的涂料组合物，其中树脂组分的主要部分包含至少基本上不含氟的一种或多种树脂。 本发明的涂料组合物可用作光致抗蚀剂外涂层，包括浸渍光刻加工。

公开(公告)号：US20100173245A1

公开(公告)日：2010-07-08

申请号：US12592155

申请日：2009-11-19

申请人： Deyan Wang ,  Charles R. Szmanda ,  George G. Barclay ,  Cheng-Bai Xu

发明人： Deyan Wang ,  Charles R. Szmanda ,  George G. Barclay ,  Cheng-Bai Xu

IPC分类号： G03F7/004 ,  G03F7/20

CPC分类号： G03F7/038 ,  G03F7/0046 ,  G03F7/0048 ,  G03F7/0382 ,  G03F7/0392 ,  G03F7/2041

摘要： New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprise one or more block copolymers. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer dining immersion lithography processing.

摘要翻译： 提供了可用于浸没式光刻的新的光致抗蚀剂组合物。 本发明优选的光致抗蚀剂组合物包含一种或多种嵌段共聚物。 本发明的特别优选的光致抗蚀剂可以将抗蚀剂材料的浸出性降低到与抗蚀剂层用餐浸渍光刻处理接触的浸渍流体中。

公开(公告)号：US20090130592A1

公开(公告)日：2009-05-21

申请号：US12319737

申请日：2009-01-12

申请人： Deyan Wang

发明人： Deyan Wang

IPC分类号： G03F7/004 ,  G03F7/20

CPC分类号： G03F7/0392 ,  G03F7/0046 ,  G03F7/0047 ,  G03F7/0382 ,  G03F7/0757 ,  G03F7/0758 ,  G03F7/2041

摘要： New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprise one or more materials that can be substantially non-mixable with a resin component of the resist. Further preferred photoresist compositions of the invention comprise 1) Si substitution, 2) fluorine substitution; 3) hyperbranched polymers; and/or 4) polymeric particles. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer during immersion lithography processing.