公开(公告)号：US11106137B2

公开(公告)日：2021-08-31

申请号：US13297258

申请日：2011-11-15

申请人： Deyan Wang ,  Cong Liu ,  Mingqi Li ,  Joon Seok Oh ,  Cheng-Bai Xu ,  Doris H. Kang ,  Clark H. Cummins ,  Matthias S. Ober

发明人： Deyan Wang ,  Cong Liu ,  Mingqi Li ,  Joon Seok Oh ,  Cheng-Bai Xu ,  Doris H. Kang ,  Clark H. Cummins ,  Matthias S. Ober

IPC分类号： G03F7/20 ,  G03F7/004 ,  G03F7/039

摘要： New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprise one or more materials that comprise one or more base reactive groups and (i) one or more polar groups distinct from the base reactive groups, and/or (ii) at least one of the base reactive groups is a non-perfluorinated base reactive group. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer during immersion lithography processing.

公开(公告)号：US09436082B2

公开(公告)日：2016-09-06

申请号：US13341067

申请日：2011-12-30

申请人： Deyan Wang ,  Shintaro Yamada ,  Cong Liu ,  Mingqi Li ,  Joon-Seok Oh ,  Chunyi Wu ,  Doris Kang ,  Cheng-Bai Xu

发明人： Deyan Wang ,  Shintaro Yamada ,  Cong Liu ,  Mingqi Li ,  Joon-Seok Oh ,  Chunyi Wu ,  Doris Kang ,  Cheng-Bai Xu

IPC分类号： G03F7/004 ,  G03F7/30 ,  G03F7/039 ,  G03F7/11

CPC分类号： G03F7/0046 ,  G03F7/0397 ,  G03F7/11 ,  G03F7/30

摘要： New photoresist compositions are provided that comprise one or more materials that have base-reactive groups and are particularly useful for dry lithography. Particularly preferred photoresists of the invention can exhibit reduced defects following development of a coating layer of the resist.

摘要翻译： 提供新的光致抗蚀剂组合物，其包含一种或多种具有碱反应性基团并且特别用于干式光刻的材料。 本发明的特别优选的光致抗蚀剂可以在抗蚀剂的涂层开发之后表现出减少的缺陷。

公开(公告)号：US09156785B2

公开(公告)日：2015-10-13

申请号：US13296949

申请日：2011-11-15

申请人： Emad Aqad ,  Mingqi Li ,  Cheng-Bai Xu ,  Deyan Wang ,  Cong Liu ,  Joon Seok Oh ,  Shintaro Yamada

发明人： Emad Aqad ,  Mingqi Li ,  Cheng-Bai Xu ,  Deyan Wang ,  Cong Liu ,  Joon Seok Oh ,  Shintaro Yamada

IPC分类号： G03F7/004 ,  G03F7/30 ,  C07C303/32 ,  C07C309/19 ,  C07C309/24 ,  C08F220/22 ,  C08F228/02 ,  C07C309/04 ,  C07C309/08 ,  C07C309/06 ,  C07C309/12 ,  C07C309/20 ,  C07C309/23 ,  C07C381/12 ,  G03F7/38 ,  C07C63/72 ,  C07C309/17 ,  G03F7/038 ,  G03F7/039 ,  G03F7/20

CPC分类号： C07C381/12 ,  C07C63/72 ,  C07C303/32 ,  C07C309/04 ,  C07C309/06 ,  C07C309/08 ,  C07C309/12 ,  C07C309/17 ,  C07C309/19 ,  C07C309/20 ,  C07C309/23 ,  C07C309/24 ,  C07C2602/42 ,  C08F220/22 ,  C08F228/02 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0382 ,  G03F7/0397 ,  G03F7/2041 ,  G03F7/38

摘要： This invention relates to new photoacid generator compounds and photoresist compositions that comprise such compounds. In particular, the invention relates to photoacid generator compounds that comprise base-cleavable groups.

摘要翻译： 本发明涉及包含这些化合物的新的光酸产生剂化合物和光致抗蚀剂组合物。 特别地，本发明涉及包含可碱基裂解基团的光酸产生剂化合物。

公开(公告)号：US20120171626A1

公开(公告)日：2012-07-05

申请号：US13341067

申请日：2011-12-30

申请人： Deyan WANG ,  Shintaro Yamada ,  Cong Liu ,  Mingqi Li ,  Joon-Seok Oh ,  Chunyi Wu ,  Doris Kang ,  Cheng-Bai Xu

发明人： Deyan WANG ,  Shintaro Yamada ,  Cong Liu ,  Mingqi Li ,  Joon-Seok Oh ,  Chunyi Wu ,  Doris Kang ,  Cheng-Bai Xu

IPC分类号： G03F7/20

CPC分类号： G03F7/0046 ,  G03F7/0397 ,  G03F7/11 ,  G03F7/30

摘要： New photoresist compositions are provided that comprise one or more materials that have base-reactive groups and are particularly useful for dry lithography. Particularly preferred photoresists of the invention can exhibit reduced defects following development of a coating layer of the resist.

摘要翻译： 提供新的光致抗蚀剂组合物，其包含一种或多种具有碱反应性基团并且特别用于干式光刻的材料。 本发明的特别优选的光致抗蚀剂可以在抗蚀剂的涂层开发之后表现出减少的缺陷。

公开(公告)号：US20130244178A1

公开(公告)日：2013-09-19

申请号：US13607728

申请日：2012-09-09

申请人： Gregory P. Prokopowicz ,  Gerhard Pohlers ,  Cong Liu ,  Chunyi Wu ,  Cheng-Bai Xu ,  Joon Seok Oh

发明人： Gregory P. Prokopowicz ,  Gerhard Pohlers ,  Cong Liu ,  Chunyi Wu ,  Cheng-Bai Xu ,  Joon Seok Oh

IPC分类号： G03F7/004 ,  G03F7/20

CPC分类号： G03F7/004 ,  G03F7/0045 ,  G03F7/20

摘要： New photoresist compositions are provided that comprise a component that comprises two or more amide groups. Preferred photoresists of the invention may comprise a resin with photoacid-labile groups; a photoacid generator compound; and a multi-amide component that can function to decrease undesired photogenrated-acid diffusion out of unexposed regions of a photoresist coating layer

摘要翻译： 提供新的光致抗蚀剂组合物，其包含包含两个或多个酰胺基团的组分。 本发明优选的光致抗蚀剂可以包含具有光酸不稳定基团的树脂; 光致酸发生剂化合物; 以及可以起到减少光致抗蚀剂涂层的未曝光区域中不期望的光致酸扩散的作用的多酰胺组分

公开(公告)号：US10670965B2

公开(公告)日：2020-06-02

申请号：US13077947

申请日：2011-03-31

申请人： Emad Aqad ,  Cong Liu ,  Cheng-Bai Xu ,  Mingqi Li

发明人： Emad Aqad ,  Cong Liu ,  Cheng-Bai Xu ,  Mingqi Li

IPC分类号： G03F7/039 ,  G03F7/20 ,  G03F7/004

摘要： New polymers are provided comprising (i) one or more covalently linked photoacid generator moieties and (ii) one or more photoacid-labile groups, wherein the one or more photoacid generator moieties are a component of one or more of the photoacid-labile groups. Preferred polymers of the invention are suitable for use in photoresists imaged at short wavelengths such as sub-200 nm, particularly 193 nm.

公开(公告)号：US08338077B2

公开(公告)日：2012-12-25

申请号：US12820331

申请日：2010-06-22

申请人： Mingqi Li ,  Cheng-Bai Xu ,  Emad Aqad ,  Cong Liu

发明人： Mingqi Li ,  Cheng-Bai Xu ,  Emad Aqad ,  Cong Liu

IPC分类号： G03F7/028 ,  G03F7/029 ,  G03F7/039 ,  G03F7/26

CPC分类号： G03F7/0045 ,  G03F7/0046 ,  G03F7/0382 ,  G03F7/0392 ,  G03F7/0397

摘要： This invention relates to new photoacid generator compounds and photoresist compositions that comprise such compounds. In particular, the invention relates to photoacid generator compounds that comprise a multi cyclic lactone moiety.

摘要翻译： 本发明涉及包含这些化合物的新的光酸产生剂化合物和光致抗蚀剂组合物。 特别地，本发明涉及包含多环内酯部分的光酸产生剂化合物。

公开(公告)号：US09696627B2

公开(公告)日：2017-07-04

申请号：US12966928

申请日：2010-12-13

申请人： Deyan Wang ,  Jinrong Liu ,  Cong Liu ,  Doris Kang ,  Anthony Zampini ,  Cheng-Bai Xu

发明人： Deyan Wang ,  Jinrong Liu ,  Cong Liu ,  Doris Kang ,  Anthony Zampini ,  Cheng-Bai Xu

IPC分类号： G03F7/20 ,  G03F7/32 ,  G03F7/039 ,  G03F7/004

CPC分类号： G03F7/2041 ,  G03F7/0046 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/322

摘要： New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprise one or more materials that have base-reactive groups. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer during immersion lithography processing.

公开(公告)号：US09720321B2

公开(公告)日：2017-08-01

申请号：US13297031

申请日：2011-11-15

申请人： Emad Aqad ,  Mingqi Li ,  Cheng-Bai Xu ,  Cong Liu

发明人： Emad Aqad ,  Mingqi Li ,  Cheng-Bai Xu ,  Cong Liu

IPC分类号： G03F7/004 ,  C07D493/08 ,  G03F7/039

CPC分类号： G03F7/0045 ,  C07D493/08 ,  G03F7/0046 ,  G03F7/0397

摘要： New lactone-containing photoacid generator compounds (“PAGs”) and photoresist compositions that comprise each PAG compounds are provided. These photoresist compositions are useful in the manufacture of electronic device.

公开(公告)号：US09507259B2

公开(公告)日：2016-11-29

申请号：US13482595

申请日：2012-05-29

申请人： Mingqi Li ,  Emad Aqad ,  Cong Liu ,  Ching-Lung Chen ,  Shintaro Yamada ,  Cheng-bai Xu ,  Joseph Mattia

发明人： Mingqi Li ,  Emad Aqad ,  Cong Liu ,  Ching-Lung Chen ,  Shintaro Yamada ,  Cheng-bai Xu ,  Joseph Mattia

IPC分类号： G03F7/004 ,  G03F7/039

CPC分类号： G03F7/004 ,  G03F7/0045 ,  G03F7/0397

摘要： A photoresist composition comprises an acid-sensitive polymer, and a cyclic sulfonium compound having the formula: (Ra)1—(Ar)—S+(—CH2—)m·−O3S—(CRb2)n-(L)p-X wherein each Ra is independently a substituted or unsubstituted C1-30 alkyl group, C6-30 aryl group, C7-30 aralkyl group, or combination comprising at least one of the foregoing, Ar is a monocyclic, polycyclic, or fused polycyclic C6-30 aryl group, each Rb is independently H, F, a linear or branched C1-10 fluoroalkyl or a linear or branched heteroatom-containing C1-10 fluoroalkyl, L is a C1-30 linking group optionally comprising a heteroatom comprising O, S, N, F, or a combination comprising at least one of the foregoing heteroatoms, X is a substituted or unsubstituted, C5 or greater monocyclic, polycyclic or fused polycyclic cycloaliphatic group, optionally comprising a heteroatom comprising O, S, N, F, or a combination comprising at least one of the foregoing, and 1 is an integer of 0 to 4, m is an integer of 3 to 20, n is an integer of 0 to 4, and p is an integer of 0 to 2.