公开(公告)号：US07986211B2

公开(公告)日：2011-07-26

申请号：US12968022

申请日：2010-12-14

申请人： Seong-il Kim ,  Jongmin Lee ,  Byoung-Gue Min ,  Hyung Sup Yoon ,  Hae Cheon Kim ,  Eun Soo Nam

发明人： Seong-il Kim ,  Jongmin Lee ,  Byoung-Gue Min ,  Hyung Sup Yoon ,  Hae Cheon Kim ,  Eun Soo Nam

IPC分类号： H01F5/00

CPC分类号： H01F17/0006 ,  H01F2017/0086 ,  H01L28/10

摘要： Provided is an inductor. The inductor includes a first to a fourth conductive terminals formed in one direction within a semiconductor substrate, a first conductive line formed on one side of the semiconductor substrate and electrically connected to the second and third conductive terminals interiorly positioned among the first to fourth conductive terminals, a second conductive line formed on the one side of the semiconductor substrate and electrically connected to the first and fourth conductive terminals exteriorly positioned among the first to fourth conductive terminals, and a third conductive line formed on the other side of the semiconductor substrate and electrically connected to the first and third conductive terminals among the first to fourth conductive terminals.

摘要翻译： 提供一种电感器。 电感器包括在半导体衬底内的一个方向上形成的第一至第四导电端子，形成在半导体衬底的一侧上的第一导电线，并且电连接到内部位于第一至第四导电端子之间的第二和第三导电端子 形成在所述半导体衬底的一侧上并与外部位于所述第一至第四导电端子之间的所述第一和第四导电端子电连接的第二导电线，以及形成在所述半导体衬底的另一侧上并电连接的第三导电线 连接到第一至第四导电端子中的第一和第三导电端子。

公开(公告)号：US20110143505A1

公开(公告)日：2011-06-16

申请号：US12773216

申请日：2010-05-04

申请人： Hokyun AHN ,  Jong-Won Lim ,  Hyung Sup Yoon ,  Woojin Chang ,  Hae Cheon Kim ,  Eun Soo Nam

发明人： Hokyun AHN ,  Jong-Won Lim ,  Hyung Sup Yoon ,  Woojin Chang ,  Hae Cheon Kim ,  Eun Soo Nam

IPC分类号： H01L21/337

CPC分类号： H01L29/66462

摘要： Provided is a method for fabricating a field effect transistor. In the method, an active layer and a capping layer are formed on a substrate. A source electrode and a drain electrode is formed on the capping layer. A dielectric interlayer is formed on the substrate, and resist layers having first and second openings with asymmetrical depths are formed on the dielectric interlayer between the source electrode and the drain electrode. The first opening exposes the dielectric interlayer, and the second opening exposes the lowermost of the resist layers. The dielectric interlayer in the bottom of the first opening and the lowermost resist layer under the second opening are simultaneously removed to expose the capping layer to the first opening and expose the dielectric interlayer to the second opening. The capping layer of the first opening is removed to expose the active layer. A metal layer is deposited on the substrate to simultaneously form a gate electrode and a field plate in the first opening and the second opening. The resist layers are removed to lift off the metal layer on the resist layers.

摘要翻译： 提供了一种用于制造场效应晶体管的方法。 在该方法中，在基板上形成有源层和覆盖层。 源极电极和漏电极形成在覆盖层上。 在基板上形成电介质中间层，在源电极和漏极之间的电介质层间形成有具有不对称深度的第一和第二开口的抗蚀剂层。 第一开口露出电介质中间层，第二开口露出最低层的抗蚀剂层。 同时除去第一开口底部的电介质中间层和第二开口下面的最下面的抗蚀剂层，以将覆盖层暴露于第一开口，并将电介质中间层暴露于第二开口。 去除第一开口的覆盖层以暴露活性层。 金属层沉积在基板上，以在第一开口和第二开口中同时形成栅电极和场板。 去除抗蚀剂层以剥离抗蚀剂层上的金属层。

公开(公告)号：US08853821B2

公开(公告)日：2014-10-07

申请号：US13618873

申请日：2012-09-14

申请人： Seong-il Kim ,  Sang-Heung Lee ,  Jong-Won Lim ,  Hyung Sup Yoon ,  Jongmin Lee ,  Byoung-Gue Min ,  Jae Kyoung Mun ,  Eun Soo Nam

发明人： Seong-il Kim ,  Sang-Heung Lee ,  Jong-Won Lim ,  Hyung Sup Yoon ,  Jongmin Lee ,  Byoung-Gue Min ,  Jae Kyoung Mun ,  Eun Soo Nam

IPC分类号： H01L21/02

CPC分类号： H01L28/91 ,  H01L23/481 ,  H01L28/92 ,  H01L2924/0002 ,  H01L2924/00

摘要： Provided are vertical capacitors and methods of forming the same. The formation of the vertical capacitor may include forming input and output electrodes on a top surface of a substrate, etching a bottom surface of the substrate to form via electrodes, and then, forming a dielectric layer between the via electrodes. As a result, a vertical capacitor with high capacitance can be provided in a small region of the substrate.

摘要翻译： 提供垂直电容器及其形成方法。 垂直电容器的形成可以包括在衬底的顶表面上形成输入和输出电极，蚀刻衬底的底表面以形成通孔电极，然后在通孔电极之间形成电介质层。 结果，可以在基板的小区域中提供具有高电容的垂直电容器。

公开(公告)号：US08772833B2

公开(公告)日：2014-07-08

申请号：US13592560

申请日：2012-08-23

申请人： Woo Jin Chang ,  Jong Won Lim ,  Ho Kyun Ahn ,  Sang Choon Ko ,  Sung Bum Bae ,  Chull Won Ju ,  Young Rak Park ,  Jae Kyoung Mun ,  Eun Soo Nam

发明人： Woo Jin Chang ,  Jong Won Lim ,  Ho Kyun Ahn ,  Sang Choon Ko ,  Sung Bum Bae ,  Chull Won Ju ,  Young Rak Park ,  Jae Kyoung Mun ,  Eun Soo Nam

IPC分类号： H01L29/15

CPC分类号： H01L29/66901 ,  H01L29/2003 ,  H01L29/401 ,  H01L29/402 ,  H01L29/42316 ,  H01L29/66462 ,  H01L29/7786

摘要： Disclosed are a power semiconductor device and a method of fabricating the same which can increase a breakdown voltage of the device through a field plate formed between a gate electrode and a drain electrode and achieve an easier manufacturing process at the same time. The power semiconductor device according to an exemplary embodiment of the present disclosure includes a source electrode and a drain electrode formed on a substrate; a dielectric layer formed between the source electrode and the drain electrode to have a lower height than heights of the two electrodes and including an etched part exposing the substrate; a gate electrode formed on the etched part; a field plate formed on the dielectric layer between the gate electrode and the drain electrode; and a metal configured to connect the field plate and the source electrode.

摘要翻译： 公开了功率半导体器件及其制造方法，其可以通过形成在栅电极和漏电极之间的场板来增加器件的击穿电压，并且同时实现更容易的制造工艺。 根据本公开的示例性实施例的功率半导体器件包括形成在衬底上的源电极和漏电极; 形成在所述源电极和所述漏电极之间的电介质层具有比所述两个电极的高度低的高度，并且包括暴露所述衬底的蚀刻部分; 形成在蚀刻部分上的栅电极; 形成在栅电极和漏电极之间的电介质层上的场板; 以及配置成连接场板和源电极的金属。

公开(公告)号：US08693459B2

公开(公告)日：2014-04-08

申请号：US12772350

申请日：2010-05-03

申请人： Chun Ju Youn ,  Yong-Hwan Kwon ,  Jong-Hoi Kim ,  Joong-Seon Choe ,  Kwang-Seong Choi ,  Kyoungwoo Heo ,  Eun Soo Nam

发明人： Chun Ju Youn ,  Yong-Hwan Kwon ,  Jong-Hoi Kim ,  Joong-Seon Choe ,  Kwang-Seong Choi ,  Kyoungwoo Heo ,  Eun Soo Nam

IPC分类号： H04J3/06

CPC分类号： H04L25/0226 ,  H04B10/532 ,  H04B10/548 ,  H04J14/06 ,  H04L27/2613

摘要： Provided is a polarization division multiplexed optical OFDM transmitter. The polarization division multiplexed optical OFDM transmitter includes a data demultiplexer, a training symbol generation unit and an optical up-converter and polarization division multiplexing unit. The data demultiplexer divides a transmission signal into a plurality of groups. The training symbol generation unit allocates a plurality of training symbols for each OFDM data which is included in the respective multiplexed groups, and allocates repetitive data in a time domain for the respective training symbols for data of 0 to periodically appear for the respective training symbols in a frequency domain. The optical up-converter and polarization division multiplexing unit performs optical frequency band conversion and polarization division multiplexing on an output of the training symbol generation unit to output a polarization division multiplexed optical OFDM signal corresponding to a plurality of polarization components.

摘要翻译： 提供了一种偏振分复用光OFDM传输器。 偏振分复用光OFDM传输器包括数据解复用器，训练符号生成单元和光上变频器和偏振分割复用单元。 数据解复用器将发送信号分成多个组。 训练符号生成单元为包含在各个多路复用组中的每个OFDM数据分配多个训练符号，并且在时域中分配针对各个训练符号的各个训练符号的重复数据，以针对各个训练符号周期性出现 频域。 光学上变频器和偏振分光复用单元在训练符号生成单元的输出上执行光频带转换和偏振分割复用，以输出对应于多个偏振分量的偏振复用光OFDM信号。

公开(公告)号：US08521040B2

公开(公告)日：2013-08-27

申请号：US12773573

申请日：2010-05-04

申请人： Chun Ju Youn ,  Yong-Hwan Kwon ,  Eun Soo Nam ,  Jong-Hoi Kim ,  Joong-Seon Choe ,  Kwang-Seong Choi

发明人： Chun Ju Youn ,  Yong-Hwan Kwon ,  Eun Soo Nam ,  Jong-Hoi Kim ,  Joong-Seon Choe ,  Kwang-Seong Choi

IPC分类号： H04B10/06

CPC分类号： H04J14/00 ,  H04B10/6971 ,  H04L27/2096 ,  H04L27/2649 ,  H04L27/2697 ,  H04L2025/03375

摘要： Provided is an optical OFDM receiver. The optical OFDM receiver receives an optical signal dependent on the nonlinearity of a transmitter. The optical OFDM receives includes an optical down converter, a nonlinearity compensator, and an OFDM demodulator. The optical down converter converts the optical signal into an electrical signal. The nonlinearity compensator filters the electrical signal, for compensating distortion which is added to the optical signal when the transmitter performs optical modulation. The OFDM demodulator demodulates the distortion-compensated electrical signal in an OFDM scheme.

摘要翻译： 提供了一种光学OFDM接收机。 光OFDM接收机根据发射机的非线性接收光信号。 光OFDM接收包括光下变频器，非线性补偿器和OFDM解调器。 光学下变频器将光信号转换成电信号。 非线性补偿器对电信号进行滤波，用于补偿当发射机进行光调制时加到光信号上的失真。 OFDM解调器以OFDM方案解调失真补偿电信号。

公开(公告)号：US08421538B2

公开(公告)日：2013-04-16

申请号：US13185913

申请日：2011-07-19

申请人： Sang-Heung Lee ,  Hae Cheon Kim ,  Eun Soo Nam

发明人： Sang-Heung Lee ,  Hae Cheon Kim ,  Eun Soo Nam

IPC分类号： H03F3/04

CPC分类号： H03F3/08 ,  H03F1/34 ,  H03F3/3432 ,  H03F2200/121 ,  H03F2200/141 ,  H03F2200/18

摘要： Provided is a feedback amplifier including: an amplification circuit unit to generate an output voltage by amplifying an input voltage inputted through an input terminal; an output circuit unit to output the generated output voltage through an output terminal; a feedback circuit unit to control the gain of the amplification circuit unit by determining a total feedback resistance value using an external control signal and controlling an input current while the total feedback resistance value is determined; and a bias circuit unit to apply a bias voltage to the feedback circuit unit.

摘要翻译： 提供一种反馈放大器，包括：放大电路单元，通过放大通过输入端子输入的输入电压来产生输出电压; 输出电路单元，用于通过输出端子输出产生的输出电压; 反馈电路单元，其通过使用外部控制信号确定总反馈电阻值来控制放大电路单元的增益，并且在确定总反馈电阻值的同时控制输入电流; 以及偏置电路单元，用于向反馈电路单元施加偏置电压。

公开(公告)号：US20130069127A1

公开(公告)日：2013-03-21

申请号：US13556377

申请日：2012-07-24

申请人： Ho Kyun AHN ,  Jong-Won Lim ,  Sung Bum Bae ,  Sang Choon Ko ,  Young Rak Park ,  Woo Jin Chang ,  Jae Kyoung Mun ,  Eun Soo Nam ,  Jeong Jin Kim ,  Chull Won Ju

发明人： Ho Kyun AHN ,  Jong-Won Lim ,  Sung Bum Bae ,  Sang Choon Ko ,  Young Rak Park ,  Woo Jin Chang ,  Jae Kyoung Mun ,  Eun Soo Nam ,  Jeong Jin Kim ,  Chull Won Ju

IPC分类号： H01L29/78 ,  H01L21/20

CPC分类号： H01L29/7786 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/42316 ,  H01L29/66462 ,  H01L29/66863 ,  H01L29/8128

摘要： A method for fabricating a field effect transistor according to an exemplary embodiment of the present disclosure includes: forming an active layer, a cap layer, an ohmic metal layer and an insulating layer on a substrate; forming multilayered photoresists on the insulating layer; patterning the multilayered photoresists to form a photoresist pattern including a first opening for gate electrode and a second opening for field electrode; etching the insulating layer by using the photoresist pattern as an etching mask so that the insulating layer in the first opening is etched more deeply and the cap layer is exposed through the first opening; etching the cap layer exposed by etching the insulating layer through the first opening to form a gate recess region; and depositing a metal on the gate recess region and the etched insulating layer to form a gate-field electrode layer.

摘要翻译： 根据本公开的示例性实施例的制造场效应晶体管的方法包括：在衬底上形成有源层，覆盖层，欧姆金属层和绝缘层; 在所述绝缘层上形成多层光致抗蚀剂; 图案化多层光致抗蚀剂以形成包括用于栅电极的第一开口和场电极的第二开口的光致抗蚀剂图案; 通过使用光致抗蚀剂图案作为蚀刻掩模来蚀刻绝缘层，使得第一开口中的绝缘层被更深地蚀刻并且盖层通过第一开口暴露; 通过蚀刻绝缘层通过第一开口蚀刻暴露的盖层，以形成栅极凹陷区域; 以及在所述栅极凹部区域和所述蚀刻绝缘层上沉积金属以形成栅极电极层。

公开(公告)号：US08304895B2

公开(公告)日：2012-11-06

申请号：US12764330

申请日：2010-04-21

申请人： Woojin Chang ,  Soon Il Yeo ,  Hae Cheon Kim ,  Eun Soo Nam

发明人： Woojin Chang ,  Soon Il Yeo ,  Hae Cheon Kim ,  Eun Soo Nam

IPC分类号： H01L23/053

CPC分类号： H01L23/5389 ,  H01L23/3107 ,  H01L24/83 ,  H01L24/90 ,  H01L25/03 ,  H01L2224/90 ,  H01L2924/00011 ,  H01L2924/01079 ,  H01L2924/09701 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/1517 ,  H01L2224/83851 ,  H01L2924/00

摘要： A semiconductor package is provided. The semiconductor package includes a package body, a plurality of semiconductor chips, and an external connection terminal. The package body is stacked with a plurality of sheets where conductive patterns and vias are disposed. The plurality of semiconductor chips are inserted into insert slots extending from one surface of the package body. The external connection terminal is provided on other surface opposite to the one surface of the package body. Here, the plurality of semiconductor chips are electrically connected to the external connection terminal.

摘要翻译： 提供半导体封装。 半导体封装包括封装体，多个半导体芯片和外部连接端子。 封装体与设置有导电图案和通孔的多个片层叠。 多个半导体芯片被插入到从封装主体的一个表面延伸的插入槽中。 外部连接端子设置在与封装主体的一个表面相对的另一表面上。 这里，多个半导体芯片电连接到外部连接端子。

公开(公告)号：US20120162373A1

公开(公告)日：2012-06-28

申请号：US13334111

申请日：2011-12-22

申请人： Bongki MHEEN ,  Ki-Jun Sung ,  Jae-Sik Sim ,  Kisoo Kim ,  MyoungSook Oh ,  Yong-Hwan Kwon ,  Eun Soo Nam

发明人： Bongki MHEEN ,  Ki-Jun Sung ,  Jae-Sik Sim ,  Kisoo Kim ,  MyoungSook Oh ,  Yong-Hwan Kwon ,  Eun Soo Nam

IPC分类号： H04N13/02

CPC分类号： G01S17/89 ,  G01S7/4813 ,  G01S7/4816 ,  G01S7/4863 ,  G01S7/4868 ,  G01S7/487 ,  G01S7/4912 ,  H04N13/106 ,  H04N13/211 ,  H04N13/254 ,  H04N13/296

摘要： Disclosed is a system of a dynamic range three-dimensional image, including: an optical detector including a gain control terminal capable of controlling an optical amplification gain; a pixel detecting module for detecting a pixel signal for configuring an image by receiving an output of the optical detector; a high dynamic range (HDR) generating module for acquiring a dynamic range image by generating a signal indicating a saturation degree of the pixel signal and combining the pixel signal based on the pixel signal detected by the pixel detecting module; and a gain control signal generating module generating an output signal for supplying required voltage to the gain control terminal of the optical detector based on the magnitude of the signal indicating the saturation degree of the pixel signal.

摘要翻译： 公开了一种动态范围三维图像的系统，包括：光检测器，其包括能够控制光放大增益的增益控制端; 像素检测模块，用于通过接收光学检测器的输出来检测用于配置图像的像素信号; 高动态范围（HDR）生成模块，用于通过产生指示像素信号的饱和度的信号来获取动态范围图像，并且基于由像素检测模块检测的像素信号组合像素信号; 以及增益控制信号生成模块，其基于表示像素信号的饱和度的信号的大小，生成用于向光检测器的增益控制端子提供所需电压的输出信号。