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公开(公告)号:US10078233B2
公开(公告)日:2018-09-18
申请号:US15328903
申请日:2014-07-30
Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP
Inventor: Di Liang , Geza Kurczveil , Marco Fiorentino , Raymond G. Beausoleil
CPC classification number: G02F1/025 , G02B6/29338 , G02B2006/12085 , G02B2006/12142 , G02F1/3133 , G02F2001/0152 , G02F2203/15
Abstract: An example device in accordance with an aspect of the present disclosure includes a first semiconductor layer disposed on a substrate, a dielectric layer disposed between the first semiconductor layer and a second semiconductor layer dissimilar from the first semiconductor layer. A capacitor is formed of at least a portion of the first semiconductor layer, the dielectric layer, and the second semiconductor layer, and is to be included in an optical waveguide resonator.
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公开(公告)号:US20170317745A1
公开(公告)日:2017-11-02
申请号:US15139971
申请日:2016-04-27
Applicant: Hewlett Packard Enterprise Development LP
Inventor: Nikolas A. Tezak , David Kielpinski , Jason Pelc , Thomas Van Vaerenbergh , Ranojoy Bose , Raymond G. Beausoleil
IPC: H04B10/079 , G02B6/293 , G11C13/04 , H04B10/80
CPC classification number: H04B10/07955 , G02B6/29335 , G02B6/29338 , G11C13/048 , H04B10/80
Abstract: In example implementations, an optical gate is provided. The optical gate receives at least one optical signal via a waveguide of an optical memory gate. The optical gate compares a wavelength of the at least one optical signal to a resonant wavelength associated with a resonator. When the wavelength of the at least one optical signal matches the resonant wavelength, a value that is stored in the resonator is read out via the at least one optical signal. Then, the at least one optical signal with the value that is read out is transmitted out of the optical gate.
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公开(公告)号:US20170317473A1
公开(公告)日:2017-11-02
申请号:US15140588
申请日:2016-04-28
Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP
Inventor: Di Liang , Geza Kurczveil , Raymond G. Beausoleil , Marco Fiorentino
CPC classification number: H01S5/343 , H01S3/0637 , H01S3/2375 , H01S5/021 , H01S5/0216 , H01S5/0261 , H01S5/0424 , H01S5/1032 , H01S5/3211 , H01S5/3412 , H01S5/347
Abstract: An example method of manufacturing a semiconductor device. A first wafer may be provided that includes a first layer that contains quantum dots. A second wafer may be provided that includes a buried dielectric layer and a second layer on the buried dielectric layer. An interface layer may be formed on at least one of the first layer and the second layer, where the interface layer may be an insulator, a transparent electrical conductor, or a polymer. The first wafer may be bonded to the second wafer by way of the interface layer.
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公开(公告)号:US20240184182A1
公开(公告)日:2024-06-06
申请号:US18062040
申请日:2022-12-06
Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP
Inventor: Stanley Cheung , Yuan Yuan , Yiwei Peng , Zhuoran Fang , Bassem Tossoun , Geza Kurczveil , Raymond G. Beausoleil
CPC classification number: G02F1/2257 , G02F1/212
Abstract: An example optical device, such as a Mach-Zehnder interferometer (MZI) is presented. The MZI includes a plurality of optical waveguide arms. At least one of the plurality of optical waveguide arms comprises a control gate, an optical waveguide, and a floating gate positioned between the control gate and the optical waveguide and electrically isolated from the optical waveguide and the control gate. The control gate receives a control voltage. The application of the control voltage to the control gate causes charges to accumulate in the floating gate resulting in a non-volatile change in an operating wavelength of the MZI.
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公开(公告)号:US20240113490A1
公开(公告)日:2024-04-04
申请号:US17937071
申请日:2022-09-30
Applicant: Hewlett Packard Enterprise Development LP
Inventor: Stanley Cheung , Wayne Victor Sorin , Yuan Yuan , Raymond G. Beausoleil , Di Liang
CPC classification number: H01S3/083 , H01S3/08027 , H01S3/08031 , H01S3/10053 , H01S3/1062 , H01S3/107
Abstract: Examples described herein relate to an optical device. The optical device includes a first microring resonator (MRR) laser having a first resonant frequency and a first free spectral range (FSR). The first FSR is greater than a channel spacing of the optical device. Further, the optical device includes a first frequency-dependent filter formed along a portion of the first MRR laser via a common bus waveguide to attenuate one or more frequencies different from the first resonant frequency. A length of the common bus waveguide is chosen to achieve a second FSR of the common bus waveguide to be substantially equal to the channel spacing to enable a single-mode operation for the optical device. Moreover, the optical device includes a first reflector formed at a first end of the common bus waveguide to enhance a unidirectionality of optical signal within the first MRR laser.
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公开(公告)号:US11539440B2
公开(公告)日:2022-12-27
申请号:US16947056
申请日:2020-07-16
Applicant: Hewlett Packard Enterprise Development LP
Inventor: Geza Kurczveil , Di Liang , Sudharsanan Srinivasan , Raymond G. Beausoleil
Abstract: Examples herein relate to optical systems. In particular, implementations herein relate to an optical system including an optical transmitter configured to transmit optical signals. The optical transmitter includes a first optical source and a second optical source coupled to the first optical source and injection seeded by the first optical source. The optical transmitter further includes an output coupler, the second optical source coupled to the optical coupler via an output waveguide and configured to emit light having multiple different wavelengths through the output waveguide. In some implementations, the second optical source is self-injection seeded.
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公开(公告)号:US11105988B2
公开(公告)日:2021-08-31
申请号:US16457776
申请日:2019-06-28
Applicant: Hewlett Packard Enterprise Development LP
Inventor: Di Liang , Zhihong Huang , Geza Kurczveil , Raymond G. Beausoleil
IPC: G02B6/42 , H04J14/02 , H01S5/343 , H01S5/34 , G02B6/293 , H01L31/18 , H01L31/107 , H01L27/144 , H01L31/0352 , H01S5/02 , H01S5/22 , H01L31/0203 , H01L31/113 , H01L31/0232 , H01S5/30 , H01S5/026 , H04B10/80 , H04B10/40 , H01S5/065 , H01S5/02234
Abstract: A Dense Wavelength Division Multiplexing (DWDM) photonic integration circuit (PIC) that implements a DWDM system, such as a transceiver, is described. The DWDM PIC architecture includes photonic devices fully integrating on a single manufacturing platform. The DWDM PIC has a multi-wavelength optical laser, a quantum dot (QD) laser with integrated heterogeneous metal oxide semiconductor (H-MOS) capacitor, integrated on-chip. The multi-wavelength optical laser can be a symmetric comb laser that generates two equal outputs of multi-wavelength light. Alternatively, the DWDM PIC can be designed to interface with a stand-alone multi-wavelength optical laser that is off-chip. In some implementations, the DWDM PIC integrates multiple optimally designed photonic devices, such as a silicon geranium (SiGe) avalanche photodetector (APD), an athermal H-MOS wavelength splitter, a QD photodetector, and a heterogenous grating coupler. Accordingly, fabricating the DWDM PIC includes a unique III-V to silicon bonding process, which is adapted for its use of SiGe APDs.
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公开(公告)号:US20200303582A1
公开(公告)日:2020-09-24
申请号:US16890374
申请日:2020-06-02
Applicant: Hewlett Packard Enterprise Development LP
Inventor: Zhihong Huang , Raymond G. Beausoleil
IPC: H01L31/109 , G02B6/12 , H01L31/0232 , H01L31/028 , H01L31/105 , H01L31/107 , H01L31/18
Abstract: An example device includes a doped absorption region to receive optical energy and generate free electrons from the received optical energy. The example device also includes a doped charge region to increase an electric field. The example device also includes an intrinsic multiplication region to generate additional free electrons from impact ionization of the generated free electrons. The example device includes a doped contact region to conduct the free electrons and the additional free electrons.
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公开(公告)号:US10680407B2
公开(公告)日:2020-06-09
申请号:US15483678
申请日:2017-04-10
Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP
Inventor: Geza Kurczveil , Di Liang , Raymond G. Beausoleil
Abstract: Examples disclosed herein relate to multi-wavelength semiconductor comb lasers. In some examples disclosed herein, a multi-wavelength semiconductor comb laser may include a waveguide included in an upper silicon layer of a silicon-on-insulator (SOI) substrate. The comb laser may include a quantum dot (QD) active gain region above the SOI substrate defining an active section in a laser cavity of the comb laser and a dispersion tuning section included in the laser cavity to tune total cavity dispersion of the comb laser.
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公开(公告)号:US10673535B2
公开(公告)日:2020-06-02
申请号:US16085364
申请日:2016-04-14
Applicant: Hewlett Packard Enterprise Development LP
Inventor: Cheng Li , Kunzhi Yu , Marco Fiorentino , Raymond G. Beausoleil
IPC: H04B10/69 , H04B10/516 , H04B10/63 , H04L25/49
Abstract: An example optical receiver may have an optical receiver front-end, four slicers, and a logic block. The optical receiver front-end may include a transimpedance amplifier to convert a photodiode output signal to a voltage signal. Three of the slicers may be data slicers, and one of the slicers may be an edge slicer. The slicers may each: shift the voltage signal based on an offset voltage set for the respective slicer, determine whether the shifted voltage signal is greater than a threshold value and generate a number of comparison signals based on the determining, and generate multiple digital signals by demuxing the comparison signals. The logic block may perform PAM-4 to binary decoding based on the data signals output by the data slicers and clock-and-data-recovery based on the digital signals output by the edge slicer.
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