公开(公告)号：US5109890A

公开(公告)日：1992-05-05

申请号：US667958

申请日：1991-03-12

Applicant: Angelo Stacher ,  Heribert Weber

Inventor： Angelo Stacher ,  Heribert Weber

IPC: D03D49/60

CPC classification number: D03D49/60 ,  Y10T74/20582

Abstract: A sley drive for a loom has a shaft which is eccentric to an axis of rotation in order to provide partial weight balancing for the pivoting movement of the sley. Sley levers are mounted on the sley shaft with each having a clip-shaped part for clamping about the shaft by a screw which passes through legs of the sley levers on the side of the reed relative to the axis of the rotation. Intermediate bearings may also be secured to the sley shaft in the same manner as the sley levers.

Abstract translation: 用于织机的筘座具有对旋转轴线偏心的轴，以便为筘座的枢转运动提供部分重量平衡。 筘座安装在筘座轴上，每个都具有夹形部分，用于通过相对于旋转轴线穿过筘座侧面的筘座的腿部的螺钉来围绕轴夹紧。 中间轴承也可以与筘座相同的方式固定到筘座轴上。

公开(公告)号：US09593011B2

公开(公告)日：2017-03-14

申请号：US13318435

申请日：2010-04-07

Applicant: Julian Gonska ,  Heribert Weber

Inventor： Julian Gonska ,  Heribert Weber

IPC: B81B1/00 ,  B81C1/00 ,  B81B7/00

CPC classification number: B81C1/00269 ,  B81B7/0029 ,  B81C2203/0118 ,  B81C2203/019 ,  B81C2203/035 ,  Y10T428/24802

Abstract: A method is described for producing a micromechanical component. The method includes providing a first substrate, providing a second substrate, developing a projecting patterned element on the second substrate, and connecting the first and the second substrate via the projecting patterned element. The method provides that the connecting of the first and the second substrate includes eutectic bonding. Also described is a micromechanical component, in which a first and a second substrate are connected to each other.

Abstract translation: 描述了用于制造微机械部件的方法。 该方法包括提供第一衬底，提供第二衬底，在第二衬底上显影突出的图案化元件，以及经由突出图案化元件连接第一和第二衬底。 该方法提供了第一和第二基板的连接包括共晶接合。 还描述了一种微机械部件，其中第一和第二基板彼此连接。

公开(公告)号：US09067778B2

公开(公告)日：2015-06-30

申请号：US13865825

申请日：2013-04-18

Applicant: Johannes Classen ,  Heribert Weber

Inventor： Johannes Classen ,  Heribert Weber

IPC: H01L21/30 ,  H01L29/84 ,  B81B7/00 ,  B81C3/00 ,  B81C1/00

CPC classification number: B81B7/008 ,  B81C1/00238 ,  B81C1/00246 ,  B81C3/001 ,  B81C2203/0735 ,  B81C2203/0771 ,  B81C2203/0785 ,  H01L2924/1433

Abstract: A manufacturing method for hybrid integrated components having a very high degree of miniaturization is provided, which hybrid integrated components each have at least two MEMS elements each having at least one assigned ASIC element. Two MEMS/ASIC wafer stacks are initially created independently of one another in that two ASIC substrates are processed independently of one another; a semiconductor substrate is mounted on the processed surface of each of the two ASIC substrates, and a micromechanical structure is subsequently created in each of the two semiconductor substrates. The two MEMS/ASIC wafer stacks are mounted on top of each other, MEMS on MEMS. Only subsequently are the components separated.

Abstract translation: 提供了一种具有非常高的小型化的混合集成部件的制造方法，这些混合集成部件各自具有至少两个具有至少一个分配的ASIC元件的MEMS元件。 最初独立地创建两个MEMS / ASIC晶片堆叠，因为两个ASIC基板彼此独立地被处理; 将半导体衬底安装在两个ASIC衬底中的每一个的处理表面上，随后在两个半导体衬底中的每一个中形成微机械结构。 两个MEMS / ASIC晶片堆叠安装在MEMS之上。 只有随后的组件分离。

公开(公告)号：US20140117472A1

公开(公告)日：2014-05-01

申请号：US14061887

申请日：2013-10-24

Applicant: Julian Gonska ,  Jochen Reinmuth ,  Kathrin Gutsche ,  Jens Frey ,  Heribert Weber

Inventor： Julian Gonska ,  Jochen Reinmuth ,  Kathrin Gutsche ,  Jens Frey ,  Heribert Weber

IPC: B81B3/00 ,  B81C1/00

CPC classification number: B81C1/00285 ,  B81B7/02 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2207/096 ,  B81C2203/0118 ,  B81C2203/035

Abstract: A micromechanical component includes a first space in which a first sensor is situated and a second space in which a second sensor is situated, different pressures prevailing in the first and second spaces, one of the two spaces extending via a third space to a first lattice structure which is situated in an edge region of the component and is essentially hermetically sealed.

Abstract translation: 微机械部件包括第一传感器所在的第一空间和第二传感器所在的第二空间，在第一和第二空间中存在不同的压力，两个空间中的一个通过第三空间延伸到第一格子 结构位于组件的边缘区域中，并且基本上被气密地密封。

公开(公告)号：US08530260B2

公开(公告)日：2013-09-10

申请号：US12798868

申请日：2010-04-12

Applicant: Julian Gonska ,  Axel Grosse ,  Heribert Weber ,  Ralf Hausner

Inventor： Julian Gonska ,  Axel Grosse ,  Heribert Weber ,  Ralf Hausner

IPC: H01L29/84

CPC classification number: B81C3/001 ,  B81C2203/019

Abstract: A method for attaching a first carrier device to a second carrier device includes forming at least one first bond layer and/or solder layer on a first exterior of the first carrier device, a partial surface being framed by the at least one first bond layer and/or solder layer, and placing the first carrier device on the second carrier device and fixedly bonding or soldering the first carrier device to the second carrier device. The at least one first bond layer and/or solder layer includes a first cover area which is larger than a first contact area.

Abstract translation: 用于将第一载体装置附接到第二载体装置的方法包括在第一载体装置的第一外部上形成至少一个第一接合层和/或焊料层，部分表面由至少一个第一接合层和 /或焊料层，并且将第一载体装置放置在第二载体装置上，并将第一载体装置固定地接合或焊接到第二载体装置。 所述至少一个第一接合层和/或焊料层包括大于第一接触区域的第一覆盖区域。

公开(公告)号：US08485041B2

公开(公告)日：2013-07-16

申请号：US12737966

申请日：2009-07-10

Applicant: Marcus Ahles ,  Hubert Benzel ,  Heribert Weber

Inventor： Marcus Ahles ,  Hubert Benzel ,  Heribert Weber

IPC: G01L7/00 ,  H01L29/84

CPC classification number: G01L9/0045 ,  G01L13/025

Abstract: A sensor system, e.g., a pressure sensor system, includes a substrate having at least one trench on a first side. The trench is provided for forming a first diaphragm region on a second side opposite from the first side. In addition, a second diaphragm region and a cavern are integrated into the material of the first diaphragm region.

Abstract translation: 传感器系统，例如压力传感器系统，包括在第一侧具有至少一个沟槽的衬底。 沟槽被设置用于在与第一侧相对的第二侧上形成第一膜片区域。 此外，第二隔膜区域和洞穴被整合到第一隔膜区域的材料中。

公开(公告)号：US20130161820A1

公开(公告)日：2013-06-27

申请号：US13719799

申请日：2012-12-19

Applicant: Julian GONSKA ,  Heribert Weber ,  Jens Frey ,  Timo Schary ,  Thomas Mayer

Inventor： Julian GONSKA ,  Heribert Weber ,  Jens Frey ,  Timo Schary ,  Thomas Mayer

IPC: H01L21/50 ,  H01L23/488

CPC classification number: H01L21/50 ,  B81B2201/0235 ,  B81B2201/0264 ,  B81C1/00269 ,  B81C2203/0118 ,  B81C2203/035 ,  H01L21/185 ,  H01L21/187 ,  H01L23/488 ,  H01L24/94 ,  H01L2224/83805 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/10253 ,  H01L2924/16251 ,  H01L2924/01013 ,  H01L2924/01032 ,  H01L2924/00

Abstract: A method for bonding two silicon substrates and a corresponding system of two silicon substrates. The method includes: providing first and second silicon substrates; depositing a first bonding layer of pure aluminum or of aluminum-copper having a copper component between 0.1 and 5% on a first bonding surface of the first silicon substrate; depositing a second bonding layer of germanium above the first bonding surface or above a second bonding surface of the second silicon substrate; subsequently joining the first and second silicon substrates, so that the first and the second bonding surfaces lie opposite each other; and implementing a thermal treatment step to form an eutectic bonding layer of aluminum-germanium or containing aluminum-germanium as the main component, between the first silicon substrate and the second silicon substrate, spikes which contain aluminum as a minimum and extend into the first silicon substrate, forming at least on the first bonding surface.

Abstract translation: 一种用于接合两个硅衬底和两个硅衬底的对应系统的方法。 该方法包括：提供第一和第二硅衬底; 在第一硅衬底的第一接合表面上沉积具有0.1至5％铜含量的纯铝或铝 - 铜的第一接合层; 在所述第一接合表面上方或第二硅衬底的第二接合表面上方沉积锗的第二接合层; 随后接合第一和第二硅衬底，使得第一和第二接合表面彼此相对; 并且在第一硅衬底和第二硅衬底之间实现热处理步骤以形成铝锗或含有铝 - 锗的共晶结合层作为主要组分，最小含有铝并延伸到第一硅中的尖峰 衬底，至少形成在第一结合表面上。

公开(公告)号：US20130147020A1

公开(公告)日：2013-06-13

申请号：US13701277

申请日：2011-04-13

Applicant: Julian Gonska ,  Jens Frey ,  Heribert Weber ,  Eckhard Graf ,  Roman Schlosser

Inventor： Julian Gonska ,  Jens Frey ,  Heribert Weber ,  Eckhard Graf ,  Roman Schlosser

IPC: H01L23/48 ,  H01L21/768

CPC classification number: H01L23/481 ,  B81B2203/033 ,  B81B2207/095 ,  B81C1/00095 ,  H01L21/76837 ,  H01L23/04 ,  H01L2224/48463 ,  H01L2924/1461 ,  H01L2924/00

Abstract: An advantageous method and system for realizing electrically very reliable and mechanically extremely stable vias for components whose functionality is realized in a layer construction on a conductive substrate. The via (Vertical Interconnect Access), which is led to the back side of the component and which is used for the electrical contacting of functional elements realized in the layer construction, includes a connection area in the substrate that extends over the entire thickness of the substrate and is electrically insulated from the adjoining substrate by a trench-like insulating frame likewise extending over the entire substrate thickness. According to the present system, the trench-like insulating frame is filled up with an electrically insulating polymer.

Abstract translation: 一种有利的方法和系统，用于实现电气非常可靠和机械上非常稳定的通孔，用于在导电基底上的层结构中实现其功能的部件。 被引导到部件的背面并用于在层结构中实现的功能元件的电接触的通孔（垂直互连访问）包括在基板中的连接区域，该连接区域在整个厚度 并且通过类似于整个基板厚度延伸的沟槽状绝缘框架与邻接的基板电绝缘。 根据本系统，沟槽状绝缘框架填充有电绝缘聚合物。

公开(公告)号：US20120061860A1

公开(公告)日：2012-03-15

申请号：US13232088

申请日：2011-09-14

Applicant: Tjalf Pirk ,  Juergen Butz ,  Axel Franke ,  Frieder Haag ,  Heribert Weber ,  Arnim Hoechst ,  Sonja Knies

Inventor： Tjalf Pirk ,  Juergen Butz ,  Axel Franke ,  Frieder Haag ,  Heribert Weber ,  Arnim Hoechst ,  Sonja Knies

IPC: H01L21/56 ,  H01L23/28

CPC classification number: H01L23/3121 ,  H01L21/561 ,  H01L21/568 ,  H01L23/5389 ,  H01L23/58 ,  H01L24/24 ,  H01L24/96 ,  H01L25/0655 ,  H01L2224/04105 ,  H01L2224/24137 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19107 ,  H01L2924/3511 ,  H01M6/40 ,  H01M10/0436 ,  H01M10/0525 ,  Y02E60/122 ,  Y02P70/54 ,  H01L2924/00

Abstract: A method for constructing an electrical circuit that includes at least one semiconductor chip encapsulated with a potting compound is disclosed. The method includes applying a galvanic layer arrangement for forming an electrochemical element on an element of the electrical circuit including the at least one semiconductor chip.

Abstract translation: 公开了一种构造电路的方法，该电路包括至少一个用封装化合物封装的半导体芯片。 该方法包括在包括至少一个半导体芯片的电路的元件上施加用于形成电化学元件的电偶层布置。

公开(公告)号：US20110014794A1

公开(公告)日：2011-01-20

申请号：US12892008

申请日：2010-09-28

Applicant: Arnd KAELBERER ,  Helmut Baumann ,  Roland Scheuerer ,  Heribert Weber

Inventor： Arnd KAELBERER ,  Helmut Baumann ,  Roland Scheuerer ,  Heribert Weber

IPC: H01L21/306

CPC classification number: B81C1/00539 ,  B81C1/00619 ,  B81C1/00626 ,  H01L21/30608

Abstract: A device made of single-crystal silicon having a first side, a second side which is situated opposite to the first side, and a third side which extends from the first side to the second side, the first side and the second side each extending in a 100 plane of the single-crystal silicon, the third side extending in a first area in a 111 plane of the single-crystal silicon. The third side extends in a second area in a 110 plane of the single-crystal silicon. Furthermore, a production method for producing a device made of single-crystal silicon is described.

Abstract translation: 由单晶硅制成的器件，其具有第一侧，与第一侧相对的第二侧，以及从第一侧延伸到第二侧的第三侧，第一侧和第二侧各自延伸 单晶硅的100平面，第三面在单晶硅的111平面的第一区域中延伸。 第三面在单晶硅的110平面的第二区域中延伸。 此外，描述了用于制造由单晶硅制成的器件的制造方法。