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    Magnetic head comprising a multilayer magnetoresistive device and a yoke for introducing magnetic flux from a medium to the magnetoresistive device
    43.
    发明授权
    Magnetic head comprising a multilayer magnetoresistive device and a yoke for introducing magnetic flux from a medium to the magnetoresistive device 失效
    磁头包括多层磁阻器件和用于将磁通从介质引入到磁阻器件的磁轭

    公开(公告)号：US06785100B2

    公开(公告)日：2004-08-31

    申请号：US09829400

    申请日：2001-04-09

    申请人： Masayoshi Hiramoto ,  Nozomu Matsukawa ,  Akihiro Odagawa ,  Kenji Iijima ,  Hiroshi Sakakima

    发明人： Masayoshi Hiramoto ,  Nozomu Matsukawa ,  Akihiro Odagawa ,  Kenji Iijima ,  Hiroshi Sakakima

    IPC分类号： G11B539

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/012 ,  G11B5/11 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3916 ,  G11B5/3925 ,  G11B5/398 ,  G11B5/40 ,  G11B2005/3996

    摘要： The present invention provides a magnetic head having improved characteristics, using a magnetoresistive device in which current flows across the film plane such as a TMR device. In a first magnetic head of the present invention, when the area of a non-magnetic layer is defined as a device cross-section area, and the area of a yoke is defined as a yoke area, viewed along the direction perpendicular to the surface of the substrate over which the yoke and the magnetoresistive device are formed, then the device cross-section area is not less than 30% of the yoke area, so that a resistance increase of the device cross-section area is suppressed. In a second magnetic head of the present invention, a magnetoresistive device is formed on a substrate, and a yoke is provided above a non-magnetic layer constituting the device. In a third magnetic head of the present invention, the free layer of the magnetoresistive device includes at least two magnetic films and at least one non-magnetic film that are laminated alternately, and the thickness of the non-magnetic layer is not less than 2 nm and not more than 10 nm, and magnetostatic coupling is dominant. In a fourth magnetic head of the present invention, a magnetic gap is provided adjacent to the magnetoresistive device and the magnetic films are coupled antiferromagnetically.

    摘要翻译： 本发明提供一种具有改进特性的磁头，其使用磁阻装置，其中电流流过诸如TMR装置的膜平面。 在本发明的第一磁头中，当非磁性层的面积被定义为器件横截面积，并且将磁轭的面积定义为磁轭面积时，沿垂直于表面的方向观察 在形成磁轭和磁阻装置的基板上，器件截面积不小于磁轭面积的30％，从而可以抑制器件截面积的电阻增加。 在本发明的第二磁头中，在基板上形成磁阻装置，在构成装置的非磁性层的上方设置磁轭。 在本发明的第三磁头中，磁阻装置的自由层包括至少两个磁性膜和交替层叠的至少一个非磁性膜，非磁性层的厚度不小于2 nm，不大于10nm，静磁耦合为主。 在本发明的第四磁头中，与磁阻装置相邻设置有磁隙，并且磁膜与反铁磁耦合。

    Amorphous materials with improved properties
    46.
    发明授权
    Amorphous materials with improved properties 失效
    具有改善性能的无定形材料

    公开(公告)号：US5358576A

    公开(公告)日：1994-10-25

    申请号：US157112

    申请日：1980-06-06

    申请人： Harufumi Senno ,  Hiroshi Sakakima ,  Masatsugu Yamaguchi ,  Eiichi Hirota

    发明人： Harufumi Senno ,  Hiroshi Sakakima ,  Masatsugu Yamaguchi ,  Eiichi Hirota

    IPC分类号： C22C45/04 ,  H01F1/153 ,  C22C19/07 ,  H01F1/047

    CPC分类号： C22C45/04 ,  H01F1/15316

    摘要： In amorphous materials including at least one iron-transition metal of Fe, Co, and Ni, and at least one metalloid of B, C, Si, and P, excellent magnetic characteristics can be provided subject to the condition that 0.5 to 10 atomic % of the above-described iron-transition metals are substituted by Mn. In addition, when the amorphous material partially substituted with Mn as described above is further comprised of at least one element selected from Groups IIIa, IVa, Va, and VIa in the periodic table, the crystallization temperature is considerably raised.

    摘要翻译： 在包含Fe，Co和Ni的至少一种铁过渡金属和至少一种B，C，Si和P的准金属的无定形材料中，可以提供优选的磁特性，条件是以0.5至10原子％ 的上述铁 - 过渡金属被Mn取代。 此外，当如上所述被Mn部分取代的无定形材料进一步包含选自元素周期表中的IIIa，IVa，Va和VIa族中的至少一种元素时，结晶温度显着升高。

    Method of heat treatments of amorphous alloy ribbons
    50.
    发明授权
    Method of heat treatments of amorphous alloy ribbons 失效
    非晶合金带热处理方法

    公开(公告)号：US4288260A

    公开(公告)日：1981-09-08

    申请号：US134132

    申请日：1980-03-26

    申请人： Harufumi Senno ,  Hiroshi Sakakima ,  Yukihiro Yanagiuchi ,  Tsuneo Inoue ,  Masatsugu Yamaguchi ,  Eiichi Hirota

    发明人： Harufumi Senno ,  Hiroshi Sakakima ,  Yukihiro Yanagiuchi ,  Tsuneo Inoue ,  Masatsugu Yamaguchi ,  Eiichi Hirota

    IPC分类号： C21D6/00 ,  C21D9/56 ,  C22F1/00 ,  H01F1/153 ,  H01F1/00

    CPC分类号： H01F1/15341 ,  C21D9/56 ,  C21D9/564

    摘要： A method of heat treatments of amorphous alloy ribbons comprises the sequential steps of; grinding amorphous alloy ribbon continuously fed at a predetermined speed (V) selectively varied in the range of 1 cm/sec.ltoreq.V.ltoreq.50 cm/sec, to uniformly finish the ribbon, and successively, heat-treating the ribbon with its surface contacting a stationary or rotating heating body having a surface temperature (T) defined in the range of (T.sub.cry -200.degree. C.).ltoreq.V.ltoreq.(T.sub.cry +50.degree. C.), where T.sub.cry is a crystallization point temperature of the alloy, to uniformly enhance the magnetic properties of the ribbon, and to remove the specific curlings inherently caused by so-called splat cooling manufacturing method, without causing any developments of brittleness of the ribbon mentioned above.

    摘要翻译： 非晶合金带的热处理方法包括以下步骤： 在以1cm / sec×50cm / sec的范围内选择性地变化的以预定速度（V）连续进料的非晶态合金带的研磨，以使丝条均匀地完成，并且随后用 其表面接触表面温度（T）在（Tcry-200℃）=（Tcry + 50℃）范围内的固定或旋转加热体，其中Tcry为结晶 以均匀地提高带的磁特性，并且消除由所谓的丝锥冷却制造方法固有地引起的特定卷曲，而不会引起上述带的脆性的任何变化。