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87 条记录 (耗时 0.029 秒)

    Method and apparatus for x-ray analyses
    43.
    发明授权
    Method and apparatus for x-ray analyses 失效
    x射线分析的方法和装置

    公开(公告)号：US5594246A

    公开(公告)日：1997-01-14

    申请号：US430535

    申请日：1995-04-25

    申请人： Yoshimi Sudo ,  Tokuo Kure ,  Ken Ninomiya ,  Katsuhiro Kuroda ,  Takashi Nishida ,  Hideo Todokoro ,  Yasuhiro Mitsui ,  Hiroyasu Shichi

    发明人： Yoshimi Sudo ,  Tokuo Kure ,  Ken Ninomiya ,  Katsuhiro Kuroda ,  Takashi Nishida ,  Hideo Todokoro ,  Yasuhiro Mitsui ,  Hiroyasu Shichi

    IPC分类号： G01N23/225 ,  H01J37/252 ,  G01N23/223

    CPC分类号： G01N23/2252 ,  H01J37/252 ,  H01J2237/2445

    摘要： An X-ray analyzing method includes the steps of applying an irradiated electron beam, converged by a condenser lens and an objective lens into a thin beam, to the inside of a fine hole existing on the surface of a sample; observing X-rays generated from a residual substance existing inside the fine hole; and performing a qualitative and quantitative analysis of the residual substance. The X-rays are observed by an X-ray detector installed in an internal space of the condenser lens, an internal space of the objective lens, or between the condenser lens and the objective lens, by detecting only the X-rays radiated within the angular range -.theta. to +.theta., where .theta. is an angle formed with a center axis of the electron beam, and so defined that tan .theta. is substantially equal to a/d, where a and d are the radius and the depth of the fine hole, respectively.

    摘要翻译： X射线分析方法包括以下步骤：将由聚光透镜和物镜会聚的照射的电子束施加到薄的光束中，使其存在于样品表面上的细孔的内部; 观察由存在于细孔内的残留物质产生的X射线; 并对剩余物质进行定性和定量分析。 X射线由安装在聚光透镜的内部空间，物镜的内部空间或者聚光透镜与物镜之间的X射线检测器观测，仅检测在该透镜内辐射的X射线 角度范围-θ至+θ，其中θ是与电子束的中心轴形成的角度，并且如此定义为tanθ基本上等于a / d，其中a和d是微细的半径和深度 孔。

    Secondary ion mass spectrometer
    44.
    发明授权
    Secondary ion mass spectrometer 失效
    二次离子质谱仪

    公开(公告)号：US4851673A

    公开(公告)日：1989-07-25

    申请号：US228018

    申请日：1988-08-04

    申请人： Eiichi Izumi ,  Hiroshi Iwamoto ,  Eisuke Mitani ,  Hiroyasu Shichi

    发明人： Eiichi Izumi ,  Hiroshi Iwamoto ,  Eisuke Mitani ,  Hiroyasu Shichi

    IPC分类号： H01J37/244 ,  G01Q30/02 ,  H01J49/02 ,  H01J49/04 ,  H01J49/06 ,  H01J49/26

    CPC分类号： H01J49/02

    摘要： A secondary ion mass spectrometer including primary ion emitting means for generating a primary ion to irradiate a specimen with the primary ion, means for separating secondary ions sputtered from the specimen, in accordance with mass-to-charge ratios, and detection means for detecting a secondary ion current emerging from the secondary ion separating means is disclosed, in which, when the value of the secondary ion current becomes greater than the upper limit of the dynamic range of the detecting means, the secondary ion current is attenuated by an attenuator, and the value of secondary ion current detected by the detection means is divided by the attenuation factor of the attenuator to obtain a corrected value. Thus, the secondary ion mass spectrometer is prevented from producing an erroneous analytical result due to the saturation of the detection means, that is, has a wide dynamic range, in which the amount of secondary ion varies by eight to ten orders of magnitude. Accordingly, the sescondary ion mass spectrometer can quantitatively determine a high-concentration element and a considerably-low-concentration element at the same time, and can determine the concentration distribution of an analytical element in a wide concentration range from a large value to a considerably small value.

    摘要翻译： 一种二次离子质谱仪，包括用于产生一次离子以用一次离子照射样本的初级离子发射装置，用于根据质荷比分离从样品溅射的二次离子的装置，以及检测装置 公开了从二次离子分离装置出现的二次离子电流，其中当二次离子电流的值变得大于检测装置的动态范围的上限时，二次离子电流被衰减器衰减，并且 由检测装置检测的二次离子电流的值除以衰减器的衰减因子以获得校正值。 因此，二次离子质谱仪由于检测装置饱和，即二次离子量变化八到十个数量级的宽动态范围而被防止产生错误的分析结果。 因此，该saysondary离子质谱仪可以同时定量地确定高浓度元素和相当低浓度的元素，并且可以确定从大值到相当大的浓度范围内的分析元素的浓度分布 价值小

    Ion source
    45.
    发明授权
    Ion source 失效
    离子源

    公开(公告)号：US4687938A

    公开(公告)日：1987-08-18

    申请号：US808027

    申请日：1985-12-12

    申请人： Hifumi Tamura ,  Hiroyasu Shichi

    发明人： Hifumi Tamura ,  Hiroyasu Shichi

    IPC分类号： H01J27/26 ,  H01J37/08 ,  H01J37/26 ,  H01J27/00

    CPC分类号： H01J27/26 ,  H01J37/08

    摘要： An ion source includes an ion source material holder adapted to load an ion source material thereon and having an aperture at the bottom thereof, an ion emitter mounted on the ion source material holder at the aperture, heating means for heating the ion source material holder and the ion emitter, and an ion extracting electrode for extracting an ion beam from the ion emitter. The ion emitter is made of a mixture of a material having a large work function and a material having a small work function, in order to be able to emit both positive ions and negative ions from the ion emitter. The polarity of a voltage applied between the ion emitter and the ion extracting electrode is changed so that one of the positive ion beam and the negative ion beam can be selectively extracted from the ion emitter.

    摘要翻译： 离子源包括离子源材料保持器，其适于在其上装载离子源材料并且在其底部具有孔，安装在孔处的离子源材料保持器上的离子发射器，用于加热离子源材料保持器的加热装置和 离子发射体和用于从离子发射器提取离子束的离子提取电极。 离子发射器由具有大功函数的材料和具有小功函数的材料的混合物制成，以便能够从离子发射器发射正离子和负离子。 改变施加在离子发射体和离子提取电极之间的电压的极性，使得能够从离子发射体中选择性地提取正离子束和负离子束中的一个。

    Apparatus for ion beam fabrication
    47.
    发明授权
    Apparatus for ion beam fabrication 有权
    离子束制造装置

    公开(公告)号：US07696496B2

    公开(公告)日：2010-04-13

    申请号：US12003207

    申请日：2007-12-20

    申请人： Satoshi Tomimatsu ,  Hiroyasu Shichi ,  Noriyuki Kaneoka ,  Kaoru Umemura ,  Koji Ishiguro

    发明人： Satoshi Tomimatsu ,  Hiroyasu Shichi ,  Noriyuki Kaneoka ,  Kaoru Umemura ,  Koji Ishiguro

    IPC分类号： H01J37/317

    CPC分类号： H01J37/3056 ,  H01J37/045 ,  H01J37/244 ,  H01J37/304 ,  H01J2237/24405 ,  H01J2237/24507 ,  H01J2237/24535 ,  H01J2237/24542 ,  H01J2237/30472

    摘要： The apparatus for ion beam fabrication, which has been able to detect any anomalous condition of ion beams only by means of the current irradiated on the specimen, could not compensate the failure by investigating the cause and could not realize stable processing. To solve the problem described above, the present invention includes the first and second blankers and Faraday cups switches ON and OFF the first and second blankers and monitors beam current at two positions above and below the projection mask. By adopting this configuration, it will be possible to acquire the information on failure in ion beam, sort out the cause of the failure and to compensate the failure while limiting damages to the projection mask. As a result, it will be possible to realize stable processing by means of ion beam, and to use the ion beam fabricating device on a stable basis.

    摘要翻译： 离子束制造装置只能通过照射在样本上的电流来检测离子束的任何异常状态，不能通过调查原因补偿故障，无法实现稳定的处理。 为了解决上述问题，本发明包括第一和第二消隐器和法拉第杯开关第一和第二消隐器的接通和断开，并监视在投影面罩上方和下方的两个位置处的电流。 通过采用这种配置，可以获取关于离子束故障的信息，整理故障原因并补偿故障，同时限制对投影面罩的损害。 结果，可以通过离子束实现稳定的处理，并且可以稳定地使用离子束制造装置。

    Method for depositing a film using a charged particle beam, method for performing selective etching using the same, and charged particle beam equipment therefor
    48.
    发明申请
    Method for depositing a film using a charged particle beam, method for performing selective etching using the same, and charged particle beam equipment therefor 失效
    使用带电粒子束沉积膜的方法，使用其进行选择性蚀刻的方法及其带电粒子束设备

    公开(公告)号：US20090071605A1

    公开(公告)日：2009-03-19

    申请号：US12289667

    申请日：2008-10-31

    申请人： Muneyuki Fukuda ,  Hiroyasu Shichi

    发明人： Muneyuki Fukuda ,  Hiroyasu Shichi

    IPC分类号： C23F1/08 ,  B05C11/00

    CPC分类号： C23C16/047 ,  C23C16/52 ,  H01J37/3023 ,  H01J2237/30472 ,  H01J2237/31732 ,  H01J2237/31745

    摘要： Certain film deposition and selective etching technology may involve scanning of a charged particle beam along with a deposition gas and etching gas, respectively. In conventional methods, unfortunately, the deposition rate or the selective ratio is oftentimes decreased depending on optical system setting, scan spacing, dwell time, loop time, substrate, etc. Accordingly, an apparatus is provided for finding an optical system setting, a dwell time, and a scan spacing. These parameters are found to realize the optimal scanning method of the charged particle beam from the loop time dependence of the deposition rate or etching rate. This deposition rate or etching rate are measurements stored in advance for a desired irradiation region where film deposition or selective etching should be performed. The apparatus displays a result of its judgment on a display device.

    摘要翻译： 某些薄膜沉积和选择性蚀刻技术可能包括分别与沉积气体和蚀刻气体一起扫描带电粒子束。 在常规方法中，不幸的是，沉积速率或选择比通常根据光学系统设置，扫描间隔，停留时间，循环时间，衬底等​​而降低。因此，提供了一种用于找到光学系统设置，驻留 时间和扫描间距。 发现这些参数是根据沉积速率或蚀刻速率的循环时间依赖性来实现带电粒子束的最佳扫描方法。 该沉积速率或蚀刻速率是预先存储于应进行成膜或选择性蚀刻的期望的照射区域的测量值。 该装置在显示装置上显示其判断结果。