公开(公告)号：US20170162459A1

公开(公告)日：2017-06-08

申请号：US14962835

申请日：2015-12-08

Applicant: Infineon Technologies AG

Inventor： Johannes Georg Laven ,  Moriz Jelinek ,  Werner Schustereder ,  Hans-Joachim Schulze

IPC: H01L21/66 ,  H01J37/244 ,  H01L21/683 ,  H01J37/317 ,  H01L21/265 ,  H01L21/67

CPC classification number: H01L22/26 ,  H01J37/244 ,  H01J37/3171 ,  H01J2237/2001 ,  H01L21/265 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/67248 ,  H01L21/6835

Abstract: An apparatus and a method for implanting ions are disclosed. In an embodiment, the apparatus includes a receptacle configured to support the wafer, a source of dopants configured to selectively provide dopants to an implantation region of the wafer and a source of radiation configured to selectively irradiate the implantation region.

公开(公告)号：US20170110322A1

公开(公告)日：2017-04-20

申请号：US15297914

申请日：2016-10-19

Applicant: Infineon Technologies AG

Inventor： Johannes Georg Laven ,  Hans-Joachim Schulze ,  Werner Schustereder

IPC: H01L21/265 ,  H01L29/36 ,  H01L29/78 ,  H01L29/66 ,  H01L29/861

CPC classification number: H01L21/26586 ,  H01L21/26513 ,  H01L21/26593 ,  H01L29/0634 ,  H01L29/0638 ,  H01L29/0834 ,  H01L29/1095 ,  H01L29/36 ,  H01L29/6609 ,  H01L29/66712 ,  H01L29/7802 ,  H01L29/861 ,  H01L29/8613

Abstract: A method for forming a semiconductor device includes implanting doping ions into a semiconductor substrate. A deviation between a main direction of a doping ion beam implanting the doping ions and a main crystal direction of the semiconductor substrate is less than ±0.5° during the implanting of the doping ions into the semiconductor substrate. The method further includes controlling a temperature of the semiconductor substrate during the implantation of the doping ions so that the temperature of the semiconductor substrate is within a target temperature range for more than 70% of an implant process time used for implanting the doping ions. The target temperature range reaches from a lower target temperature limit to an upper target temperature limit. The lower target temperature limit is equal to a target temperature minus 30° C., and the target temperature is higher than 80° C.

公开(公告)号：US09564495B2

公开(公告)日：2017-02-07

申请号：US15081487

申请日：2016-03-25

Applicant: Infineon Technologies AG

Inventor： Johannes Georg Laven ,  Hans-Joachim Schulze ,  Moriz Jelinek ,  Werner Schustereder

IPC: H01L31/072 ,  H01L31/109 ,  H01L31/0328 ,  H01L31/0336 ,  H01L29/32 ,  H01L21/225 ,  H01L21/265 ,  H01L21/306 ,  H01L21/324 ,  H01L29/04 ,  H01L29/16 ,  H01L29/167 ,  H01L29/36 ,  H01L21/322 ,  H01L29/78 ,  H01L29/86 ,  H01L29/739 ,  H01L29/74

CPC classification number: H01L29/32 ,  H01L21/2253 ,  H01L21/26506 ,  H01L21/26513 ,  H01L21/306 ,  H01L21/3221 ,  H01L21/324 ,  H01L21/3242 ,  H01L29/04 ,  H01L29/16 ,  H01L29/167 ,  H01L29/36 ,  H01L29/7395 ,  H01L29/74 ,  H01L29/7802 ,  H01L29/86

Abstract: A semiconductor device includes a semiconductor body with parallel first and second surfaces and containing hydrogen-related donors. A concentration profile of the hydrogen-related donors vertical to the first surface includes a maximum value of at least 1E15 cm−3 at a first distance to the first surface and does not fall below 1E14 cm−3 over at least 60% of an interval between the first surface and the first distance.

Abstract translation: 半导体器件包括具有平行的第一和第二表面并且含有氢的相关供体的半导体本体。 垂直于第一表面的氢相关供体的浓度分布包括在距第一表面的第一距离处的至少1E15cm-3的最大值，并且在间隔的至少60％内不低于1E14cm-3 在第一表面和第一距离之间。

公开(公告)号：US20160305012A1

公开(公告)日：2016-10-20

申请号：US15189209

申请日：2016-06-22

Applicant: Infineon Technologies AG

Inventor： Alexander Breymesser ,  Stephan Voss ,  Hans-Joachim Schulze ,  Werner Schustereder

IPC: C23C14/48 ,  H01J37/20 ,  H01L29/06 ,  H01J37/147 ,  H01L21/265 ,  H01L21/687

CPC classification number: C23C14/48 ,  H01J37/1477 ,  H01J37/20 ,  H01J37/3171 ,  H01J2237/20214 ,  H01J2237/30483 ,  H01L21/265 ,  H01L21/68764 ,  H01L29/0615 ,  H01L29/0623 ,  H01L29/0638 ,  H01L29/0657 ,  H01L29/36 ,  H01L29/45 ,  H01L29/744 ,  H01L29/861

Abstract: An ion implantation apparatus includes an ion beam directing unit, a substrate support, and a controller. The controller is configured to effect a relative movement between an ion beam passing the ion beam directing unit and the substrate support. A beam track of the ion beam on a substrate mounted on the substrate support includes circles or a spiral.

Abstract translation: 离子注入装置包括离子束引导单元，基板支撑件和控制器。 控制器被配置为实现通过离子束引导单元的离子束和衬底支撑件之间的相对运动。 安装在基板支架上的基板上的离子束的光束轨迹包括圆形或螺旋状。

公开(公告)号：US09412824B2

公开(公告)日：2016-08-09

申请号：US14480705

申请日：2014-09-09

Applicant: Infineon Technologies AG

Inventor： Thomas Neidhart ,  Franz Josef Niedernostheide ,  Hans-Joachim Schulze ,  Werner Schustereder ,  Alexander Susiti

IPC: H01L29/861 ,  H01L29/167 ,  H01L29/32 ,  H01L29/36 ,  H01L29/06 ,  H01L29/739 ,  H01L29/78 ,  H01L21/265

CPC classification number: H01L29/167 ,  H01L21/265 ,  H01L21/26506 ,  H01L29/0603 ,  H01L29/32 ,  H01L29/36 ,  H01L29/7393 ,  H01L29/7801 ,  H01L29/861

Abstract: A semiconductor component includes a semiconductor body having a first side and a second side opposite the first side. In the semiconductor body, a dopant region is formed by a dopant composed of an oxygen complex. The dopant region extends over a section L having a length of at least 10 μm along a direction from the first side to the second side. The dopant region has an oxygen concentration in a range of 1×1017 cm−3 to 5×1017 cm−3 over the section L.

Abstract translation: 半导体部件包括具有第一侧和与第一侧相对的第二侧的半导体本体。 在半导体本体中，由氧络合物构成的掺杂剂形成掺杂剂区域。 掺杂剂区域沿着从第一侧到第二侧的方向具有至少10μm的长度的部分L延伸。 掺杂剂区域在部分L上的氧浓度范围为1×1017cm-3至5×1017cm-3。

公开(公告)号：US09390883B2

公开(公告)日：2016-07-12

申请号：US14177910

申请日：2014-02-11

Applicant: Infineon Technologies AG

Inventor： Alexander Breymesser ,  Stephan Voss ,  Hans-Joachim Schulze ,  Werner Schustereder

IPC: H01J37/147 ,  H01J37/20 ,  H01J37/317 ,  H01L29/06 ,  H01L29/744 ,  H01L29/45

CPC classification number: C23C14/48 ,  H01J37/1477 ,  H01J37/20 ,  H01J37/3171 ,  H01J2237/20214 ,  H01J2237/30483 ,  H01L21/265 ,  H01L21/68764 ,  H01L29/0615 ,  H01L29/0623 ,  H01L29/0638 ,  H01L29/0657 ,  H01L29/36 ,  H01L29/45 ,  H01L29/744 ,  H01L29/861

Abstract: An ion implantation apparatus includes an ion beam directing unit, a substrate support, and a controller. The controller is configured to effect a relative movement between an ion beam passing the ion beam directing unit and the substrate support. A beam track of the ion beam on a substrate mounted on the substrate support includes circles or a spiral.

Abstract translation: 离子注入装置包括离子束引导单元，基板支撑件和控制器。 控制器被配置为实现通过离子束引导单元的离子束和衬底支撑件之间的相对运动。 安装在基板支架上的基板上的离子束的光束轨迹包括圆形或螺旋状。

公开(公告)号：US20160172438A1

公开(公告)日：2016-06-16

申请号：US14952337

申请日：2015-11-25

Applicant: Infineon Technologies AG

Inventor： Moriz Jelinek ,  Johannes Georg Laven ,  Hans-Joachim Schulze ,  Werner Schustereder

IPC: H01L29/06 ,  H01L21/266 ,  H01L29/78 ,  H01L29/04 ,  H01L29/10 ,  H01L29/66 ,  H01L21/265 ,  H01L21/66

CPC classification number: H01L29/0634 ,  H01L21/26506 ,  H01L21/26586 ,  H01L21/3242 ,  H01L22/14 ,  H01L22/20 ,  H01L29/045 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/32 ,  H01L29/407 ,  H01L29/66348 ,  H01L29/66712 ,  H01L29/66734 ,  H01L29/7397 ,  H01L29/7802 ,  H01L29/7813

Abstract: A first doped region is formed in a single crystalline semiconductor substrate. Light ions are implanted through a process surface into the semiconductor substrate to generate crystal lattice vacancies between the first doped region and the process surface, wherein a main beam axis of an implant beam used for implanting the light ions deviates by at most 1.5 degree from a main crystal direction along which channeling of the light ions occurs. A second doped region with a conductivity type opposite to the first doped region is formed based on the crystal lattice vacancies and hydrogen atoms.

Abstract translation: 第一掺杂区形成在单晶半导体衬底中。 将轻离子通过工艺表面注入到半导体衬底中，以在第一掺杂区域和工艺表面之间产生晶格空位，其中用于注入轻离子的注入束的主光束轴离离最远1.5度 发生轻离子的通道的主晶体方向。 基于晶格空位和氢原子形成具有与第一掺杂区相反的导电类型的第二掺杂区。

公开(公告)号：US09105487B2

公开(公告)日：2015-08-11

申请号：US14189295

申请日：2014-02-25

Applicant: Infineon Technologies AG

Inventor： Hans-Joachim Schulze ,  Johannes Laven ,  Dieter Fuchs ,  Werner Schustereder ,  Roman Knoefler

IPC: H01L29/06 ,  H01L29/66 ,  H01L21/265 ,  H01L29/739 ,  H01L29/78 ,  H01L29/10 ,  H01L29/861 ,  H01L29/08 ,  H01L29/16

CPC classification number: H01L29/0619 ,  H01L21/26513 ,  H01L29/0634 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/66333 ,  H01L29/66712 ,  H01L29/7395 ,  H01L29/7802 ,  H01L29/8611

Abstract: A super junction semiconductor device includes a substrate layer of a first conductivity type and an epitaxial layer adjoining the substrate layer and including first columns of the first conductivity type and second columns of a second conductivity type. The first and second columns extend along a main crystal direction into the epitaxial layer and have vertical dopant profiles perpendicular to the first surface. The vertical dopant profile of at least one of the first and second columns includes first portions separated by second portions. In each of the first portions a dopant concentration varies by at most 30% of a maximum value within the respective first portion. In the second portions the dopant concentration is lower than in the adjoining first portions. A ratio of a total length of the first portions to a total length of the first and second portions is at least 50%.

Abstract translation: 超结半导体器件包括第一导电类型的衬底层和邻接衬底层的外延层，并且包括第一导电类型的第一列和第二导电类型的第二列。 第一和第二列沿着主晶体方向延伸到外延层中并具有垂直于第一表面的垂直掺杂物分布。 第一和第二列中的至少一个的垂直掺杂剂分布包括由第二部分分开的第一部分。 在每个第一部分中，掺杂剂浓度在相应的第一部分内变化最大值的30％。 在第二部分中，掺杂剂浓度低于邻接的第一部分。 第一部分的总长度与第一和第二部分的总长度之比至少为50％。

公开(公告)号：US11764063B2

公开(公告)日：2023-09-19

申请号：US16886175

申请日：2020-05-28

Applicant: Infineon Technologies AG

Inventor： Hans-Joachim Schulze ,  Romain Esteve ,  Moriz Jelinek ,  Caspar Leendertz ,  Werner Schustereder

IPC: H01L21/04 ,  H01L29/16 ,  H01L29/06 ,  H01L29/78

CPC classification number: H01L21/047 ,  H01L29/0634 ,  H01L29/1608 ,  H01L29/7813

Abstract: A silicon carbide substrate is provided that includes a drift layer of a first conductivity type and a trench extending from a main surface of the silicon carbide substrate into the drift layer. First dopants are implanted through a first trench sidewall of the trench. The first dopants have a second conductivity type and are implanted at a first implant angle into the silicon carbide substrate, wherein at the first implant angle channeling occurs in the silicon carbide substrate. The first dopants form a first compensation layer extending parallel to the first trench sidewall.

公开(公告)号：US20230087353A1

公开(公告)日：2023-03-23

申请号：US17941052

申请日：2022-09-09

Applicant: Infineon Technologies AG

Inventor： Werner Schustereder ,  Roman Baburske ,  Hans-Joachim Schulze

IPC: H01L21/225 ,  H01L21/265 ,  H01L29/08 ,  H01L29/06 ,  H01L29/10 ,  H01L29/868 ,  H01L29/872

Abstract: A method of forming a laterally varying dopant concentration profile of an electrically activated dopant in a power semiconductor device includes: providing a semiconductor body; implanting a dopant to form a doped region in the semiconductor body; providing, above the doped region, a mask layer having a first section and a second section, the first section having has a first thickness along a vertical direction and the second section having a second thickness along the vertical direction, the second thickness being different from the first thickness; and subjecting the doped region and both mask sections to a laser thermal annealing, LTA, processing step.