公开(公告)号：US20210098440A1

公开(公告)日：2021-04-01

申请号：US16586167

申请日：2019-09-27

Applicant: Intel Corporation

Inventor： Adel Elsherbini ,  Van Le ,  Johanna Swan ,  Shawna Liff ,  Patrick Morrow ,  Gerald Pasdast ,  Min Huang

IPC: H01L25/18 ,  G06F13/40 ,  H01L25/065 ,  H01L25/00

Abstract: Techniques and mechanisms for providing at a packaged device an integrated circuit (IC) chip and a chiplet, wherein memory resources of the chiplet are accessible by a processor core of the IC chip. In an embodiment, a hardware interface of the packaged device includes first conductive contacts at a side of the chiplet, wherein second conductive contacts of the hardware interface are electrically interconnected to the IC chip each via a respective path which is independent of the chiplet. In another embodiment, one or more of the first conductive contacts are configured to deliver power, or communicate a signal, to a device layer of one of the IC chip or the chiplet.

公开(公告)号：US20210098422A1

公开(公告)日：2021-04-01

申请号：US16586145

申请日：2019-09-27

Applicant: Intel Corporation

Inventor： Adel Elsherbini ,  Johanna Swan ,  Shawna Liff ,  Patrick Morrow ,  Gerald Pasdast ,  Van Le

IPC: H01L25/065 ,  H01L23/538 ,  H01L23/522 ,  H01L23/00 ,  H01L25/00

Abstract: Composite IC chip including a chiplet embedded within metallization levels of a host IC chip. The chiplet may include a device layer and one or more metallization layers interconnecting passive and/or active devices into chiplet circuitry. The host IC may include a device layer and one or more metallization layers interconnecting passive and/or active devices into host chip circuitry. Features of one of the chiplet metallization layers may be directly bonded to features of one of the host IC metallization layers, interconnecting the two circuitries into a composite circuitry. A dielectric material may be applied over the chiplet. The dielectric and chiplet may be thinned with a planarization process, and additional metallization layers fabricated over the chiplet and host chip, for example to form first level interconnect interfaces. The composite IC chip structure may be assembled into a package substantially as a monolithic IC chip.

公开(公告)号：US20170287735A1

公开(公告)日：2017-10-05

申请号：US15089136

申请日：2016-04-01

Applicant: Intel Corporation

Inventor： Jimin Yao ,  Eric Li ,  Shawna Liff

IPC: H01L21/56 ,  H01L23/31

CPC classification number: H01L21/563 ,  H01L21/565 ,  H01L23/3185 ,  H01L2021/60022 ,  H01L2224/16225 ,  H01L2224/26175 ,  H01L2224/73204 ,  H01L2224/92125

Abstract: Electronic device package technology is disclosed. In one example, an electronic device package can include a substrate, an electronic component disposed on the substrate and electrically coupled to the substrate, and an underfill material disposed at least partially between the electronic component and the substrate. A lateral portion of the underfill material can comprises a lateral surface extending away from the substrate and a meniscus surface extending between the lateral surface and the electronic component.

公开(公告)号：US20240274542A1

公开(公告)日：2024-08-15

申请号：US18628525

申请日：2024-04-05

Applicant: Intel Corporation

Inventor： Adel Elsherbini ,  Shawna Liff ,  Johanna Swan ,  Gerald Pasdast

IPC: H01L23/538 ,  H01L21/304 ,  H01L21/48 ,  H01L23/00

CPC classification number: H01L23/5385 ,  H01L21/3043 ,  H01L21/4846 ,  H01L24/20

Abstract: Techniques and mechanisms for high interconnect density communication with an interposer. In some embodiments, an interposer comprises a substrate and portions disposed thereon, wherein respective inorganic dielectrics of said portions adjoin each other at a material interface, which extends to each of the substrate and a first side of the interposer. A first hardware interface of the interposer spans the material interface at the first side, wherein a first one of said portions comprises first interconnects which couple the first hardware interface to a second hardware interface at the first side. A second one of said portions includes second interconnects which couple one of first hardware interface or the second hardware interface to a third hardware interface at another side of the interposer. In another embodiment, a metallization pitch feature of the first hardware interface is smaller than a corresponding metallization pitch feature of the second hardware interface.

公开(公告)号：US12014990B2

公开(公告)日：2024-06-18

申请号：US18132865

申请日：2023-04-10

Applicant: INTEL CORPORATION

Inventor： Adel Elsherbini ,  Shawna Liff ,  Johanna Swan ,  Gerald Pasdast

IPC: H01L23/538 ,  H01L21/304 ,  H01L21/48 ,  H01L23/00

CPC classification number: H01L23/5385 ,  H01L21/3043 ,  H01L21/4846 ,  H01L24/20

Abstract: Techniques and mechanisms for high interconnect density communication with an interposer. In some embodiments, an interposer comprises a substrate and portions disposed thereon, wherein respective inorganic dielectrics of said portions adjoin each other at a material interface, which extends to each of the substrate and a first side of the interposer. A first hardware interface of the interposer spans the material interface at the first side, wherein a first one of said portions comprises first interconnects which couple the first hardware interface to a second hardware interface at the first side. A second one of said portions includes second interconnects which couple one of first hardware interface or the second hardware interface to a third hardware interface at another side of the interposer. In another embodiment, a metallization pitch feature of the first hardware interface is smaller than a corresponding metallization pitch feature of the second hardware interface.

公开(公告)号：US20240063180A1

公开(公告)日：2024-02-22

申请号：US17891654

申请日：2022-08-19

Applicant: Intel Corporation

Inventor： Kimin Jun ,  Adel Elsherbini ,  Omkar Karhade ,  Bhaskar Jyoti Krishnatreya ,  Mohammad Enamul Kabir ,  Jiraporn Seangatith ,  Tushar Talukdar ,  Shawna Liff ,  Johanna Swan ,  Feras Eid

IPC: H01L25/065 ,  H01L25/00 ,  H01L21/48 ,  H01L23/13 ,  H01L23/31

CPC classification number: H01L25/0652 ,  H01L25/50 ,  H01L21/4857 ,  H01L23/13 ,  H01L23/3185 ,  H01L24/05

Abstract: Quasi-monolithic multi-die composites including a primary fill structure within a space between adjacent IC dies. A fill material layer, which may have inorganic composition, may be bonded to a host substrate and patterned to form a primary fill structure that occupies a first portion of the host substrate. IC dies may be bonded to regions of the host substrate within openings where the primary fill structure is absent to have a spatial arrangement complementary to the primary fill structure. The primary fill structure may have a thickness substantially matching that of IC dies and/or be co-planar with a surface of one or more of the IC dies. A gap fill material may then be deposited within remnants of the openings to form a secondary fill structure that occupies space between the IC dies and the primary fill structure.

公开(公告)号：US20230245972A1

公开(公告)日：2023-08-03

申请号：US18132865

申请日：2023-04-10

Applicant: INTEL CORPORATION

Inventor： Adel Elsherbini ,  Shawna Liff ,  Johanna Swan ,  Gerald Pasdast

IPC: H01L23/538 ,  H01L21/304 ,  H01L21/48 ,  H01L23/00

CPC classification number: H01L23/5385 ,  H01L21/3043 ,  H01L21/4846 ,  H01L24/20

Abstract: Techniques and mechanisms for high interconnect density communication with an interposer. In some embodiments, an interposer comprises a substrate and portions disposed thereon, wherein respective inorganic dielectrics of said portions adjoin each other at a material interface, which extends to each of the substrate and a first side of the interposer. A first hardware interface of the interposer spans the material interface at the first side, wherein a first one of said portions comprises first interconnects which couple the first hardware interface to a second hardware interface at the first side. A second one of said portions includes second interconnects which couple one of first hardware interface or the second hardware interface to a third hardware interface at another side of the interposer. In another embodiment, a metallization pitch feature of the first hardware interface is smaller than a corresponding metallization pitch feature of the second hardware interface.

公开(公告)号：US20220416393A1

公开(公告)日：2022-12-29

申请号：US17359138

申请日：2021-06-25

Applicant: Intel Corporation

Inventor： Georgios Dogiamis ,  Johanna Swan ,  Adel Elsherbini ,  Shawna Liff ,  Beomseok Choi ,  Qiang Yu

IPC: H01P3/16 ,  H01L25/065 ,  H01P1/208 ,  H01L23/538 ,  H01P5/107 ,  H01L23/66

Abstract: Waveguide interconnects for semiconductor packages are disclosed. An example semiconductor package includes a first semiconductor die, a second semiconductor die, and a substrate positioned between the first and second dies. The substrate includes a waveguide interconnect to provide a communication channel to carry an electromagnetic signal. The waveguide interconnect is defined by a plurality of through substrate vias (TSVs). The TSVs in a pattern around the at least the portion of the substrate to define a boundary of the communication channel.

公开(公告)号：US20220415853A1

公开(公告)日：2022-12-29

申请号：US17358948

申请日：2021-06-25

Applicant: Intel Corporation

Inventor： Aleksandar Aleksov ,  Johanna Swan ,  Shawna Liff ,  Feras Eid ,  Adel Elsherbini ,  Julien Sebot

IPC: H01L25/065 ,  H01L25/18 ,  H01L23/00 ,  H01L25/00

Abstract: A composite integrated circuit (IC) structure includes at least a first IC die in a stack with a second IC die. Each die has a device layer and metallization layers interconnected to transistors of the device layer and terminating at features. First features of the first IC die are primarily of a first composition with a first microstructure. Second features of the second IC die are primarily of a second composition or a second microstructure. A first one of the second features is in direct contact with one of the first features. The second composition has a thermal conductivity at least an order of magnitude lower than that of the first composition and first microstructure. The first composition may have a thermal conductivity at least 40 times that of the second composition or second microstructure.

公开(公告)号：US11525970B2

公开(公告)日：2022-12-13

申请号：US17083173

申请日：2020-10-28

Applicant: Intel Corporation

Inventor： Shawna Liff ,  Adel A. Elsherbini ,  Telesphor Kamgaing ,  Sasha N. Oster ,  Gaurav Chawla

IPC: G06F13/14 ,  G02B6/42 ,  H01P5/00 ,  H01Q13/10 ,  H04B1/40 ,  H04B7/00 ,  H04M9/06 ,  G06F13/00

Abstract: Microelectronic package communication is described using radio interfaces connected through wiring. One example includes a system board, an integrated circuit chip, and a package substrate mounted to the system board to carry the integrated circuit chip, the package substrate having conductive connectors to connect the integrated circuit chip to external components. A radio on the package substrate is coupled to the integrated circuit chip to modulate the data onto a carrier and to transmit the modulated data. A radio on the system board receives the transmitted modulated data and demodulates the received data, and a cable interface is coupled to the system board radio to couple the received demodulated data to a cable.