公开(公告)号：US20160093697A1

公开(公告)日：2016-03-31

申请号：US14874505

申请日：2015-10-05

Applicant: International Business Machines Corporation

Inventor： Marc A. Bergendahl ,  James J. Demarest ,  Hong He ,  Seth L. Knupp ,  Raghavasimhan Sreenivasan ,  Sean Teehan ,  Allan W. Upham ,  Chih-Chao Yang

IPC: H01L29/12 ,  H01L29/78

CPC classification number: H01L29/785 ,  H01L21/3086 ,  H01L21/76224 ,  H01L21/823807 ,  H01L21/823821 ,  H01L27/0924 ,  H01L29/045 ,  H01L29/0653 ,  H01L29/122 ,  H01L29/6656 ,  H01L29/66795 ,  H01L29/7851

Abstract: A finFET with a quantum well having a conformal epitaxial well on a {100} crystallographic orientated fin. The structure may include a fin having a {100} crystallographic orientation; a conformal well covering the fin; and a conformal barrier covering the conformal well.

Abstract translation: 具有在{100}晶体取向翅片上具有共形外延阱的量子阱的finFET。 该结构可以包括具有{100}晶体取向的翅片; 覆盖鳍的保形井; 以及覆盖保形井的保形屏障。

公开(公告)号：US09276013B1

公开(公告)日：2016-03-01

申请号：US14601338

申请日：2015-01-21

Applicant: International Business Machines Corporation

Inventor： Bruce B. Doris ,  Hong He ,  Juntao Li ,  Junli Wang ,  Chih-Chao Yang

IPC: H01L27/12 ,  H01L21/8238 ,  H01L21/84 ,  H01L21/02 ,  H01L21/225 ,  H01L21/324 ,  H01L21/311 ,  H01L21/306 ,  H01L29/16 ,  H01L29/161 ,  H01L29/66 ,  H01L27/092

CPC classification number: H01L27/1211 ,  H01L21/02532 ,  H01L21/2251 ,  H01L21/30604 ,  H01L21/31111 ,  H01L21/324 ,  H01L21/823807 ,  H01L21/845 ,  H01L27/0922 ,  H01L27/0924 ,  H01L29/1054 ,  H01L29/16 ,  H01L29/161 ,  H01L29/6653 ,  H01L29/66818

Abstract: A method of fabricating silicon (Si) and silicon germanium (SiGe) fins is described. The method includes forming at least two Si fins on a buried oxide (BOX) layer disposed on a substrate, at least one Si fin being formed in a first region and at least one Si fin being formed in a second region, the at least one Si fin in the second region being thinner than the at least one Si fin in the first region. The method also includes depositing an oxide mask over the first region, epitaxially growing an SiGe layer on the at least one Si fin in the second region, and performing a thermal annealing process to drive Ge from the SiGe layer into the at least one Si fin in the second region to form at least one SiGe fin in the second region.

Abstract translation: 描述了制造硅（Si）和硅锗（SiGe）翅片的方法。 该方法包括在设置在衬底上的掩埋氧化物（BOX）层上形成至少两个Si散热片，至少一个Si鳍形成在第一区域中，并且至少一个Si鳍片形成在第二区域中，所述至少一个 第二区域中的Si鳍片比第一区域中的至少一个Si鳍片薄。 该方法还包括在第一区域上沉积氧化物掩模，在第二区域中在至少一个Si鳍片上外延生长SiGe层，并且执行热退火工艺以将Ge从SiGe层驱动到至少一个Si鳍 在第二区域中在第二区域中形成至少一个SiGe鳍。

公开(公告)号：US20150311320A1

公开(公告)日：2015-10-29

申请号：US14584790

申请日：2014-12-29

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Kangguo Cheng ,  Bruce B. Doris ,  Hong He ,  Ali Khakifirooz ,  Yunpeng Yin

IPC: H01L29/66 ,  H01L21/225

CPC classification number: H01L29/66795 ,  H01L21/02532 ,  H01L21/2254 ,  H01L21/30604 ,  H01L21/324 ,  H01L21/823431 ,  H01L29/0649 ,  H01L29/66545 ,  H01L29/785 ,  H01L29/7851

Abstract: A method of forming a semiconductor device that includes forming a silicon including fin structure and forming a germanium including layer on the silicon including fin structure. Germanium is then diffused from the germanium including layer into the silicon including fin structure to convert the silicon including fin structure to silicon germanium including fin structure.

Abstract translation: 一种形成半导体器件的方法，包括在包括鳍结构的硅上形成包括鳍结构的硅并形成含锗层。 然后，锗从含锗层扩散到包括鳍结构的硅中，以将包括鳍结构的硅转化为包括鳍结构的硅锗。

公开(公告)号：US20150255300A1

公开(公告)日：2015-09-10

申请号：US14198005

申请日：2014-03-05

Applicant: International Business Machines Corporation

Inventor： Hong He ,  Chiahsun Tseng ,  Chun-Chen Yeh ,  Yunpeng Yin

IPC: H01L21/308 ,  H01L27/088 ,  H01L29/66

CPC classification number: H01L27/0886 ,  H01L21/3085 ,  H01L21/3088 ,  H01L21/823431 ,  H01L21/845 ,  H01L27/1211 ,  H01L29/16 ,  H01L29/66795 ,  H01L29/785

Abstract: A method of forming a fin-based field-effect transistor device includes forming one or more first fins comprising silicon on a substrate, forming epitaxial layers on sides of the one or more first fins, and removing the one or more first fins to form a plurality of second fins.

Abstract translation: 一种形成鳍状场效应晶体管器件的方法包括在衬底上形成包括硅的一个或多个第一鳍片，在一个或多个第一鳍片的侧面上形成外延层，以及去除一个或多个第一鳍片以形成 多个第二鳍片。

公开(公告)号：US20150243760A1

公开(公告)日：2015-08-27

申请号：US14191751

申请日：2014-02-27

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Hong He ,  Chiahsun Tseng ,  Tenko Yamashita ,  Chun-Chen Yeh ,  Yunpeng Yin

IPC: H01L29/66 ,  H01L29/78 ,  H01L29/08

CPC classification number: H01L29/66545 ,  H01L29/0649 ,  H01L29/0847 ,  H01L29/6653 ,  H01L29/66795 ,  H01L29/785

Abstract: A method for semiconductor fabrication includes providing mask layers on opposite sides of a substrate, the substrate having one or more mandrels. Dummy spacers are formed along a periphery of the mask layers. A dummy gate structure is formed between the dummy spacers. The dummy spacers are removed to provide a recess. Low-k spacers are formed in the recess.

Abstract translation: 一种用于半导体制造的方法包括在衬底的相对侧上提供掩模层，所述衬底具有一个或多个心轴。 沿着掩模层的周边形成虚拟间隔物。 在虚拟间隔件之间形成虚拟栅极结构。 去除虚拟间隔物以提供凹陷。 在凹槽中形成低k间隔物。

公开(公告)号：US09093326B2

公开(公告)日：2015-07-28

申请号：US14058341

申请日：2013-10-21

Applicant: International Business Machines Corporation

Inventor： Kangguo Cheng ,  Hong He ,  Chiahsun Tseng ,  Yunpeng Yin

IPC: H01L29/66 ,  H01L27/12 ,  H01L21/8234 ,  H01L21/84 ,  H01L29/78

CPC classification number: H01L21/845 ,  H01L21/823431 ,  H01L21/823481 ,  H01L27/1211 ,  H01L29/66795 ,  H01L29/7831

Abstract: A silicon germanium alloy layer is formed on a semiconductor material layer by epitaxy. An oxygen impermeable layer is formed on the silicon germanium alloy layer. The oxygen impermeable layer and the silicon germanium alloy layer are patterned to form stacks of a silicon germanium alloy fin and an oxygen impermeable cap. A shallow trench isolation structure is formed by deposition, planarization, and recessing or an oxygen permeable dielectric material. An oxygen impermeable spacer is formed around each stack of a silicon germanium alloy fin and an oxygen impermeable cap. A thermal oxidation process is performed to convert a lower portion of each silicon germanium alloy fin into a silicon germanium oxide. During the thermal oxidation process, germanium atoms diffuse into unoxidized portions of the silicon germanium alloy fins to increase the germanium concentration therein.

Abstract translation: 通过外延在半导体材料层上形成硅锗合金层。 在硅锗合金层上形成不透氧层。 对不透氧层和硅锗合金层进行图案化以形成硅锗合金翅片和不透氧盖的叠层。 通过沉积，平坦化和凹陷形成浅沟槽隔离结构或透氧介电材料。 在硅锗合金翅片和不透氧盖的每个堆叠周围形成不透氧隔离物。 进行热氧化处理以将每个硅锗合金翅片的下部转换成硅氧化锗。 在热氧化过程中，锗原子扩散到硅锗合金翅片的未氧化部分，以增加其中的锗浓度。

公开(公告)号：US09054020B2

公开(公告)日：2015-06-09

申请号：US13686969

申请日：2012-11-28

Applicant: International Business Machines Corporation

Inventor： Hong He ,  Chiahsun Tseng ,  Chun-Chen Yeh ,  Yunpeng Yin

IPC: H01L21/76 ,  H01L29/16 ,  H01L21/308

CPC classification number: H01L29/16 ,  H01L21/3086 ,  H01L21/845 ,  H01L27/1211

Abstract: Methods and structures having increased fin density are disclosed. Structures with two sets of fins are provided. A lower set of fins is interleaved with an upper set of fins in a staggered manner, such that the lower set of fins and upper set of fins are horizontally and vertically non-overlapping.

Abstract translation: 公开了具有增加的翅片密度的方法和结构。 提供具有两组翅片的结构。 下一组翅片以交错的方式与上部翅片交错，使得下部翅片组和上部翅片组水平和垂直不重叠。

公开(公告)号：US20150144886A1

公开(公告)日：2015-05-28

申请号：US14605009

申请日：2015-01-26

Applicant: International Business Machines Corporation

Inventor： Hong He ,  Chiahsun Tseng ,  Junli Wang ,  Chun-chen Yeh ,  Yunpeng Yin

IPC: H01L29/78 ,  H01L29/06

CPC classification number: H01L29/785 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/66795 ,  H01L29/78696

Abstract: A semiconductor device comprises an insulation layer, an active semiconductor layer formed on an upper surface of the insulation layer, and a plurality of fins formed on the insulation layer. The fins are formed in the gate and spacer regions between a first source/drain region and second source/drain region, without extending into the first and second source/drain regions.

公开(公告)号：US20150064884A1

公开(公告)日：2015-03-05

申请号：US14017443

申请日：2013-09-04

Applicant: International Business Machines Corporation

Inventor： Kangguo Cheng ,  Bruce B. Doris ,  Hong He ,  Ali Khakifirooz

IPC: H01L21/02

CPC classification number: H01L21/02647 ,  H01L21/02041 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02639 ,  H01L29/66795 ,  H01L29/785

Abstract: A method of forming a semiconductor device includes forming an insulator layer over a substrate; opening a trench in the insulator layer so as to expose one or more semiconductor structures formed on the substrate; forming a protective layer on sidewalls of the trench; subjecting the substrate to a precleaning operation in preparation for epitaxial semiconductor formation, wherein the protective layer prevents expansion of the sidewalls of the trench as a result of the precleaning operation; and forming epitaxial semiconductor material within the trench and over the exposed one or more semiconductor structures.

Abstract translation: 一种形成半导体器件的方法包括在衬底上形成绝缘体层; 在所述绝缘体层中打开沟槽，以暴露形成在所述衬底上的一个或多个半导体结构; 在沟槽的侧壁上形成保护层; 对衬底进行预清洗操作以准备外延半导体形成，其中由于预清洗操作，保护层防止沟槽的侧壁膨胀; 以及在所述沟槽内并在所暴露的一个或多个半导体结构之上形成外延半导体材料。

公开(公告)号：US20150054077A1

公开(公告)日：2015-02-26

申请号：US13972032

申请日：2013-08-21

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Hong He ,  Chiahsun Tseng ,  Chun-Chen Yeh ,  Yunpeng Yin

IPC: H01L29/66 ,  H01L29/78

CPC classification number: H01L29/0649 ,  B82Y10/00 ,  B82Y40/00 ,  H01L29/0673 ,  H01L29/16 ,  H01L29/66439 ,  H01L29/66795 ,  H01L29/775 ,  H01L29/785

Abstract: A method for semiconductor fabrication includes patterning one or more mandrels over a semiconductor substrate, the one or more mandrels having dielectric material formed therebetween. A semiconductor layer is formed over exposed portions of the one or more mandrels. A thermal oxidation is performed to diffuse elements from the semiconductor layer into an upper portion of the one or more mandrels and concurrently oxidize a lower portion of the one or more mandrels to form the one or more mandrels on the dielectric material.