公开(公告)号：US07256406B2

公开(公告)日：2007-08-14

申请号：US10962467

申请日：2004-10-13

Applicant: In-kyeong Yoo ,  Chang-wook Moon ,  Chang-hoon Choi

Inventor： In-kyeong Yoo ,  Chang-wook Moon ,  Chang-hoon Choi

IPC: G21K5/10

CPC classification number: H01J37/073 ,  H01J2237/31779

Abstract: An emitter for an electron-beam projection lithography system includes a photoconductor substrate, an insulating layer formed on a front surface of the photoconductor substrate, a gate electrode layer formed on the insulating layer, and a base electrode layer formed on a rear surface of the photoconductor substrate and formed of a transparent conductive material. In operation of the emitter, a voltage is applied between the base electrode and the gate electrode layer, light is projected onto a portion of the photoconductor substrate to convert the portion of the photoconductor substrate into a conductor such that electrons are emitted only from the partial portion where the light is projected. Since the emitter can partially emit electrons, partial correcting, patterning or repairing of a subject electron-resist can be realized.

Abstract translation: 用于电子束投影光刻系统的发射器包括：感光体基板，形成于感光体基板前表面的绝缘层，形成在绝缘层上的栅极电极层，以及形成在绝缘层的背面上的基极层 感光体基板并由透明导电材料形成。 在发射极的工作中，在基极和栅极电极层之间施加电压，光被投射到光电导体基底的一部分上，以将感光体基底的一部分转换为导体，使电子仅从部分 投射光的部分。 由于发射体可以部分地发射电子，所以可以实现对象电子抗蚀剂的部分校正，图案化或修复。

公开(公告)号：US07170843B2

公开(公告)日：2007-01-30

申请号：US10610540

申请日：2003-07-02

Applicant: Seung-bum Hong ,  In-kyeong Yoo ,  Ju-hwan Jung

Inventor： Seung-bum Hong ,  In-kyeong Yoo ,  Ju-hwan Jung

IPC: H01J3/14

CPC classification number: B82Y10/00 ,  G11B9/08 ,  G11B9/14 ,  G11B9/1409 ,  G11B9/1472 ,  G11B9/149 ,  G11B11/08 ,  G11B13/06

Abstract: A high-density data storage medium, a method of manufacturing the data storage medium, a high-density data storage apparatus, and methods of writing data on, and reading and erasing data from the data storage medium by using the data storage apparatus are provided. The data storage medium includes a lower electrode, an insulation layer deposited on the lower electrode, a photoelectron emission layer deposited on the insulation layer and having a plurality of protrusions from which photoelectrons are emitted due to collisions between the protrusions and photons, and a dielectric layer deposited on the photoelectron emission layer and storing the photoelectrons emitted from the photoelectron emission layer. The data storage apparatus includes a stage supporting a data storage medium, which includes a lower electrode, an insulation layer deposited on the lower electrode, a photoelectron emission layer deposited on the insulation layer and having a plurality of protrusions from which photoelectrons are emitted due to collisions between the protrusions and photons, and a dielectric layer deposited on the photoelectron emission layer and storing the photoelectrons emitted from the photoelectron emission layer, a scanner driving the stage, a probe placed over the data storage medium and including a tip forming an electric field with the data storage medium and a cantilever supporting the tip placed at its one end so as to maintain a predetermined distance between the data storage medium and the tip, a circuit unit applying a driving signal, a data write signal, and a data erase signal to the scanner and the probe and detecting a data read signal, and a light source irradiating light on the data storage medium.

Abstract translation: 提供高密度数据存储介质，数据存储介质的制造方法，高密度数据存储装置以及通过使用数据存储装置从数据存储介质写数据和读取和擦除数据的方法 。 数据存储介质包括下电极，沉积在下电极上的绝缘层，沉积在绝缘层上的光电子发射层，并且具有多个突起，由于突起和光子之间的碰撞而从其中发射光电子;以及电介质 层沉积在光电子发射层上并存储从光电子发射层发射的光电子。 该数据存储装置包括支持数据存储介质的载台，该载台包括下电极，沉积在下电极上的绝缘层，沉积在绝缘层上的光电子发射层，并且具有多个突起，由于 突起和光子之间的碰撞，以及沉积在光电子发射层上并存储从光电子发射层发射的光电子的介电层，驱动载物台的扫描仪，放置在数据存储介质上的探针，并且包括形成电场的尖端 数据存储介质和悬臂支撑设置在其一端的尖端，以便保持数据存储介质和尖端之间的预定距离，施加驱动信号的电路单元，数据写入信号和数据擦除信号 扫描仪和探头，并检测数据读取信号，以及光源照射数据 存储介质。

公开(公告)号：US20060197082A1

公开(公告)日：2006-09-07

申请号：US11363235

申请日：2006-02-28

Applicant: Choong-rae Cho ,  In-kyeong Yoo ,  Sung-il Cho

Inventor： Choong-rae Cho ,  In-kyeong Yoo ,  Sung-il Cho

IPC: H01L29/18

CPC classification number: H01L29/7869 ,  H01L29/78681 ,  H01L49/003

Abstract: A transistor using a physical property-changing layer, a method of operating the transistor, and a method of manufacturing the transistor are provided. The transistor may include an insulation layer formed on a substrate, the first and second conductive layer patterns, the physical property-changing layer, a dielectric layer, for example, a high dielectric layer, and a gate electrode. The first and second conductive layer patterns may be spaced apart from each other on the insulation layer. The physical property-changing layer may be formed on a portion of the insulation layer between the first and second conductive layer patterns. The dielectric layer may be stacked on the physical property-changing layer and the gate electrode may be formed on the high dielectric layer.

Abstract translation: 提供了使用物理性质改变层的晶体管，晶体管的操作方法和晶体管的制造方法。 晶体管可以包括形成在衬底上的绝缘层，第一和第二导电层图案，物理性质改变层，介电层，例如高电介质层和栅电极。 第一和第二导电层图案可以在绝缘层上彼此间隔开。 物理变化层可以形成在第一和第二导电层图案之间的绝缘层的一部分上。 电介质层可以堆叠在物理变化层上，并且栅电极可以形成在高电介质层上。

公开(公告)号：US07095036B2

公开(公告)日：2006-08-22

申请号：US10795979

申请日：2004-03-10

Applicant: Dong-wook Kim ,  In-kyeong Yoo ,  Chang-wook Moon

Inventor： Dong-wook Kim ,  In-kyeong Yoo ,  Chang-wook Moon

IPC: H01J37/08

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J37/3175 ,  H01J2237/06333

Abstract: An electron beam lithography apparatus for providing one-to-one or x-to-one projection of a pattern includes a pyroelectric emitter, which is disposed a predetermined distance apart from a substrate holder, the pyroelectric emitter including a pyroelectric plate having a dielectric plate on a surface thereof and a patterned semiconductor thin film on the dielectric plate facing the substrate holder, a heating source for heating the pyroelectric emitter, and either a pair of magnets disposed beyond the pyroelectric emitter and the substrate holder, respectively, or a deflection unit disposed between the pyroelectric emitter and the substrate holder, to control paths of electrons emitted by the pyroelectric emitter. In operation, when the pyroelectric emitter is heated in a vacuum, electrons are emitted from portions of the pyroelectric plate that are not covered by the patterned semiconductor thin film.

Abstract translation: 一种用于提供图案的一对一或一对一投影的电子束光刻设备包括一个与衬底保持架隔开预定距离设置的热电发射器，该热电发射器包括一个具有电介质板的热电板 在其表面上和面对衬底保持器的电介质板上的图案化半导体薄膜，分别用于加热热电发射体的加热源和设置在热电发射器和衬底保持器之外的一对磁体或偏转单元 设置在热电发射器和衬底保持器之间，以控制由热电发射器发射的电子的路径。 在操作中，当热电发射体在真空中被加热时，从热电板的未被图案化半导体薄膜覆盖的部分发射电子。

公开(公告)号：US07015500B2

公开(公告)日：2006-03-21

申请号：US10361024

申请日：2003-02-10

Applicant: Won-bong Choi ,  In-kyeong Yoo ,  Jae-uk Chu

Inventor： Won-bong Choi ,  In-kyeong Yoo ,  Jae-uk Chu

IPC: H01B7/08 ,  H01L35/24

CPC classification number: B82Y10/00 ,  G11C13/025 ,  G11C2213/17 ,  Y10S977/943

Abstract: A fast, reliable, highly integrated memory device formed of a carbon nanotube memory device and a method for forming the same, in which the carbon nanotube memory device includes a substrate, a source electrode, a drain electrode, a carbon nanotube having high electrical and thermal conductivity, a memory cell having excellent charge storage capability, and a gate electrode. The source electrode and drain electrode are arranged with a predetermined interval between them on the substrate and are subjected to a voltage. The carbon nanotube connects the source electrode to the drain electrode and serves as a channel for charge movement. The memory cell is located over the carbon nanotube and stores charges from the carbon nanotube. The gate electrode is formed in contact with the upper surface of the memory cell and controls the amount of charge flowing from the carbon nanotube into the memory cell.

Abstract translation: 一种由碳纳米管存储器件及其形成方法形成的快速，可靠，高度集成的存储器件，其中碳纳米管存储器件包括衬底，源电极，漏电极，具有高电的碳纳米管和 热导率，具有优异电荷存储能力的存储单元和栅电极。 源电极和漏电极在它们之间以预定间隔布置在衬底上并经受电压。 碳纳米管将源电极连接到漏电极并用作电荷运动的通道。 存储单元位于碳纳米管之上，并存储来自碳纳米管的电荷。 栅电极形成为与存储单元的上表面接触，并控制从碳纳米管流入存储单元的电荷量。

公开(公告)号：US20050145835A1

公开(公告)日：2005-07-07

申请号：US11057469

申请日：2005-02-15

Applicant: In-kyeong Yoo ,  Chang-wook Moon ,  Soo-hwan Jeong ,  Dong-wook Kim

Inventor： In-kyeong Yoo ,  Chang-wook Moon ,  Soo-hwan Jeong ,  Dong-wook Kim

IPC: G03F7/20 ,  H01J1/312 ,  H01J9/02 ,  H01J37/06 ,  H01J37/073 ,  H01J37/305 ,  H01L21/027 ,  H01L29/06 ,  H01L21/00

CPC classification number: B82Y10/00 ,  H01J1/312 ,  H01J9/022 ,  H01J9/027 ,  H01J2237/31774 ,  H01J2237/31783

Abstract: An emitter for an electron-beam projection lithography (EPL) system and a manufacturing method therefor are provided. The electron-beam emitter includes a substrate, an insulating layer overlying the substrate, and a gate electrode including a base layer formed on top of the insulating layer to a uniform thickness and an electron-beam blocking layer formed on the base layer in a predetermined pattern. The manufacturing method includes steps of: preparing a substrate; forming an insulating layer on the substrate; forming a base layer of a gate electrode by depositing a conductive metal on the insulating layer to a predetermined thickness; forming an electron-beam blocking layer of the gate electrode by depositing a metal capable of anodizing on the base layer to a predetermined thickness; and patterning the electron-beam blocking layer in a predetermined pattern by anodizing. The emitter provides a uniform electric field within the insulating layer and simplify the manufacturing method therefor.

公开(公告)号：US20050036379A1

公开(公告)日：2005-02-17

申请号：US10950582

申请日：2004-09-28

Applicant: Dong-wook Kim ,  In-kyeong Yoo ,  Jung-hyun Sok ,  June-key Lee

Inventor： Dong-wook Kim ,  In-kyeong Yoo ,  Jung-hyun Sok ,  June-key Lee

IPC: G11C11/15 ,  H01L21/8246 ,  H01L21/8247 ,  H01L27/105 ,  H01L27/22 ,  H01L29/788 ,  H01L29/792 ,  H01L43/08 ,  G11C11/14

CPC classification number: H01L27/228 ,  B82Y10/00

Abstract: A single transistor type magnetic random access memory device and a method of operating and manufacturing the same, wherein the single transistor type magnetic random access memory device includes a substrate, first and second doped regions spaced apart from each other, a gate dielectric layer on a portion of the semiconductor substrate between the first and second doped regions, a magnetic tunnel junction on the gate dielectric layer, word lines on the magnetic tunnel junction extending in a first direction which is the same direction as the second doped region, bit lines connected to the first doped region in a second direction perpendicular to the first direction, and an insulating layer covering the gate dielectric layer, the magnetic tunnel junction, and the word lines. The single transistor type magnetic random access memory device has a simple circuit structure, has a prolonged lifetime and is easy to manufacture.

公开(公告)号：US06838727B2

公开(公告)日：2005-01-04

申请号：US10602736

申请日：2003-06-25

Applicant: In-kyeong Yoo ,  Sun-ae Seo ,  Hyun-jo Kim

Inventor： In-kyeong Yoo ,  Sun-ae Seo ,  Hyun-jo Kim

IPC: H01L27/10 ,  G11C11/401 ,  G11C11/404 ,  G11C16/04 ,  H01L21/00 ,  H01L21/822 ,  H01L21/8246 ,  H01L27/112 ,  H01L29/792 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109 ,  H01L49/02

CPC classification number: H01L27/11206 ,  G11C16/0475 ,  H01L27/112

Abstract: A memory device having one transistor and one resistant element as a storing means and a method for driving the memory device, includes an NPN-type transistor formed on a semiconductor substrate, an interlayer insulating film formed on the semiconductor substrate to cover the transistor in which a contact hole exposing a source region of the transistor is formed, a resistant material in which a bit data “0” or “1” is written connected to the source region of the transistor by a conductive plug or an insulating film, and a conductive plate contacting the resistant material. The memory device exhibits improved degree of integration, reduced current consumption by lengthening a refresh period thereof, and enjoys simplified manufacturing process due to a simple memory cell structure.

Abstract translation: 具有一个晶体管和一个电阻元件作为存储装置的存储器件和用于驱动存储器件的方法包括形成在半导体衬底上的NPN型晶体管，形成在半导体衬底上以覆盖晶体管的层间绝缘膜， 形成暴露晶体管的源极区域的接触孔，通过导电插塞或绝缘膜将位数据“0”或“1”写入的电阻材料连接到晶体管的源极区域，并且导电 板接触抵抗材料。 存储器件通过延长其刷新周期而呈现出提高的集成度，降低的电流消耗，并且由于简单的存储单元结构而享有简化的制造工艺。

公开(公告)号：US08526288B2

公开(公告)日：2013-09-03

申请号：US13297713

申请日：2011-11-16

Applicant: Sung-chul Lee ,  Seung-hoon Han ,  In-kyeong Yoo

Inventor： Sung-chul Lee ,  Seung-hoon Han ,  In-kyeong Yoo

IPC: G11B7/00

CPC classification number: G11C13/06 ,  G02B5/008 ,  G02F2203/10

Abstract: An optical element and an information storage device including the same. The optical element may include an optical waveguide structure for transforming circularly polarized light into plasmon and transmitting the plasmon. The optical waveguide structure may emit a circularly polarized plasmonic field. The optical element may be used in an information storage device. For example, the information storage device may include a recording medium and a recording element for recording information on the recording medium, and the recording element may include the optical element. The information may be recorded on the recording medium by using the circularly polarized plasmonic field generated by the optical element.

Abstract translation: 光学元件和包括该元件的信息存储装置。 光学元件可以包括用于将圆偏振光转换成等离子体并传输等离子体的光波导结构。 光波导结构可以发射圆偏振等离子体场。 光学元件可以用在信息存储装置中。 例如，信息存储装置可以包括用于在记录介质上记录信息的记录介质和记录元件，并且记录元件可以包括光学元件。 信息可以通过使用由光学元件产生的圆偏振等离子体场来记录在记录介质上。

公开(公告)号：US08357992B2

公开(公告)日：2013-01-22

申请号：US12659516

申请日：2010-03-11

Applicant: Ho-jung Kim ,  In-kyeong Yoo ,  Chang-jung Kim ,  Ki-ha Hong

Inventor： Ho-jung Kim ,  In-kyeong Yoo ,  Chang-jung Kim ,  Ki-ha Hong

IPC: H01L23/52 ,  H01L29/00

CPC classification number: H01L27/222 ,  G11C13/0002 ,  G11C2213/71 ,  G11C2213/73 ,  G11C2213/79 ,  H01L27/24

Abstract: The non-volatile memory device may include a substrate, a plurality of first signal lines on the substrate in a vertical direction, a plurality of memory cells having ends connected to the plurality of first signal lines, a plurality of second signal lines perpendicular to the plurality of first signal lines on the substrate and each connected to other ends of the plurality of memory cells, and a plurality of selection elements on the substrate and connected to at least two of the plurality of first signal lines.

Abstract translation: 非易失性存储器件可以包括衬底，在垂直方向上的衬底上的多个第一信号线，具有连接到多个第一信号线的端部的多个存储器单元，垂直于第一信号线的多个第二信号线 基板上的多个第一信号线，并且各自连接到多个存储单元的另一端，以及多个选择元件，并且连接到多个第一信号线中的至少两个。