公开(公告)号：US07931821B2

公开(公告)日：2011-04-26

申请号：US12639473

申请日：2009-12-16

申请人： Hiroshi Saito ,  Takanori Matsuda ,  Kaoru Miura ,  Kenji Takashima ,  Masaki Azuma ,  Takashi Iijima ,  Hiroshi Funakubo ,  Soichiro Okamura ,  Nobuhiro Kumada ,  Satoshi Wada

发明人： Hiroshi Saito ,  Takanori Matsuda ,  Kaoru Miura ,  Kenji Takashima ,  Masaki Azuma ,  Takashi Iijima ,  Hiroshi Funakubo ,  Soichiro Okamura ,  Nobuhiro Kumada ,  Satoshi Wada

IPC分类号： C04B35/495 ,  C04B35/00

CPC分类号： H01L41/187 ,  C01B21/0821 ,  C01P2002/34 ,  C01P2002/77 ,  C04B35/58 ,  C04B35/58014 ,  C04B2235/3208 ,  C04B2235/3213 ,  C04B2235/3215 ,  C04B2235/3232 ,  C04B2235/3236 ,  C04B2235/3244 ,  C04B2235/3287 ,  C04B2235/3293 ,  C04B2235/3298 ,  C04B2235/3418 ,  C04B2235/3873 ,  C04B2235/3886 ,  C04B2235/3895 ,  C04B2235/465 ,  C04B2235/6025 ,  C04B2235/761 ,  C04B2235/765 ,  C04B2235/768 ,  C04B2235/787 ,  H01L41/43

摘要： An oxynitride piezoelectric material, which exhibits ferroelectricity and has good piezoelectric properties, and a method of producing the oxynitride piezoelectric material. The oxynitride piezoelectric material includes a tetragonal perovskite-type oxynitride represented by the following general formula (1): A1−xBix+δ1B1−yB′y+δ2O3−zNz  (1), where A represents a divalent element, B and B′ each represent a tetravalent element, x represents a numerical value of 0.35 or more to 0.6 or less, y represents a numerical value of 0.35 or more to 0.6 or less, z represents a numerical value of 0.35 or more to 0.6 or less, and δ1 and δ2 each represent a numerical value of −0.2 or more to 0.2 or less, in which the A includes at least one kind selected from Ba, Sr, and Ca and the B and the B′ each include at least one kind selected from Ti, Zr, Hf, Si, Ge, and Sn.

摘要翻译： 表现出铁电性并且具有良好的压电性能的氮氧化合物压电材料以及氮氧化合物压电材料的制造方法。 氮氧化物压电材料包括由以下通式（1）表示的四方晶系钙钛矿型氧氮化物：A1-xBix +δ1B1-yB'y +δ2O3-zNz（1）其中A表示二价元素，B和B'各自 表示四价元素，x表示0.35以上且0.6以下的数值，y表示0.35以上且0.6以下的数值，z表示0.35以上且0.6以下的数值，δ表示 δ2分别表示-0.2以上0.2以下的数值，其中A包含选自Ba，Sr，Ca中的至少一种，B和B'分别为选自Ti， Zr，Hf，Si，Ge和Sn。

公开(公告)号：US20100155647A1

公开(公告)日：2010-06-24

申请号：US12639473

申请日：2009-12-16

申请人： Hiroshi Saito ,  Takanori Matsuda ,  Kaoru Miura ,  Kenji Takashima ,  Masaki Azuma ,  Takashi Iijima ,  Hiroshi Funakubo ,  Soichiro Okamura ,  Nobuhiro Kumada ,  Satoshi Wada

发明人： Hiroshi Saito ,  Takanori Matsuda ,  Kaoru Miura ,  Kenji Takashima ,  Masaki Azuma ,  Takashi Iijima ,  Hiroshi Funakubo ,  Soichiro Okamura ,  Nobuhiro Kumada ,  Satoshi Wada

IPC分类号： H01L41/187

CPC分类号： H01L41/187 ,  C01B21/0821 ,  C01P2002/34 ,  C01P2002/77 ,  C04B35/58 ,  C04B35/58014 ,  C04B2235/3208 ,  C04B2235/3213 ,  C04B2235/3215 ,  C04B2235/3232 ,  C04B2235/3236 ,  C04B2235/3244 ,  C04B2235/3287 ,  C04B2235/3293 ,  C04B2235/3298 ,  C04B2235/3418 ,  C04B2235/3873 ,  C04B2235/3886 ,  C04B2235/3895 ,  C04B2235/465 ,  C04B2235/6025 ,  C04B2235/761 ,  C04B2235/765 ,  C04B2235/768 ,  C04B2235/787 ,  H01L41/43

摘要： Provided are an oxynitride piezoelectric material which exhibits ferroelectricity and has good piezoelectric properties and a method of producing the oxynitride piezoelectric material. The oxynitride piezoelectric material includes a tetragonal perovskite-type oxynitride represented by the following general formula (1): A1-xBix+δ1B1-yB′y+δ2O3-zNz  (1) where A represents a divalent element, B and B′ each represent a tetravalent element, x represents a numerical value of 0.35 or more to 0.6 or less, y represents a numerical value of 0.35 or more to 0.6 or less, z represents a numerical value of 0.35 or more to 0.6 or less, and δ1 and δ2 each represent a numerical value of −0.2 or more to 0.2 or less, in which the A includes at least one kind selected from Ba, Sr, and Ca and the B and the B′ each include at least one kind selected from Ti, Zr, Hf, Si, Ge, and Sn.

摘要翻译： 本发明提供一种表现出铁电性并且具有良好的压电性能的氮氧化合物压电材料以及制造氮氧化合物压电材料的方法。 氮氧化物压电材料包括由以下通式（1）表示的四方晶系钙钛矿型氧氮化物：A1-xBix +δ1B1-yB'y +δ2O3-zNz（1）其中A表示二价元素，B和B'各自表示 四价元素，x表示0.35以上且0.6以下的数值，y表示0.35以上且0.6以下的数值，z表示0.35以上且0.6以下的数值，δ1和δ2 各自表示-0.2以上至0.2以下的数值，其中A包括选自Ba，Sr和Ca中的至少一种，B和B'各自包含选自Ti，Zr中的至少一种 ，Hf，Si，Ge和Sn。

公开(公告)号：US07528532B2

公开(公告)日：2009-05-05

申请号：US11464993

申请日：2006-08-16

申请人： Toshihiro Ifuku ,  Katsumi Aoki ,  Takanori Matsuda ,  Hiroshi Funakubo ,  Shintaro Yokoyama ,  Satoshi Okamoto

发明人： Toshihiro Ifuku ,  Katsumi Aoki ,  Takanori Matsuda ,  Hiroshi Funakubo ,  Shintaro Yokoyama ,  Satoshi Okamoto

IPC分类号： H01L41/08

CPC分类号： H01L41/316 ,  B41J2/14233 ,  B41J2/161 ,  B41J2/1623 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1631 ,  B41J2/1632 ,  B41J2/1634 ,  B41J2/1642 ,  B41J2/1646 ,  H01L41/0973 ,  H01L41/187

摘要： The present invention provides a piezoelectric substance of single crystal or uniaxial crystal type in which three lattice lengths a, b and c of a unit lattice of the piezoelectric substance are smaller than lattice length a0, b0 and c0 of a unit lattice of a bulk state of single crystal having the same temperature and same composition, respectively, and a volume of the unit lattice of the piezoelectric substance is smaller than a volume of the unit lattice of the bulk state of single crystal having the same temperature and same composition.

摘要翻译： 本发明提供一种单晶或单轴晶体型压电体，其中压电体的单位晶格的三个格子长度a，b和c小于体状单位晶格的晶格长度a0，b0和c0 具有相同温度和相同组成的单晶，并且压电体的单位晶格的体积小于具有相同温度和相同组成的单晶体状态的单位晶格的体积。

公开(公告)号：US20090091215A1

公开(公告)日：2009-04-09

申请号：US12237933

申请日：2008-09-25

申请人： Katsumi Aoki ,  Kenichi Takeda ,  Toshihiro Ifuku ,  Takanori Matsuda ,  Tetsuro Fukui

发明人： Katsumi Aoki ,  Kenichi Takeda ,  Toshihiro Ifuku ,  Takanori Matsuda ,  Tetsuro Fukui

IPC分类号： H01L41/00

CPC分类号： B41J2/14233 ,  B41J2202/03 ,  H01L41/0478 ,  H01L41/0973 ,  H01L41/1875 ,  H01L41/316 ,  H01L41/319

摘要： The piezoelectric actuator includes a piezoelectric film between two electrode layers and a diaphragm. Assuming that: each elastic coefficient of all materials is isotropic and a distortion amount of the piezoelectric film by an electric field is isotropic in all in-plane directions; a point located on a diaphragm surface and having a maximum displacement when a predetermined electric field is applied to distort the piezoelectric film, is expressed by PδMAX; and a point located on a circumference of a reference-circle having PδMAX as a center and having a minimum difference in displacement from PδMAX is expressed by PδA, the diaphragm has a shape capable of determining an axis A1 set in a straight-line joining PδMAX and PδA, the diaphragm comprises a single-crystalline-material in which a plane orthogonal to A1 and perpendicular to an axis A2 on the diaphragm surface, is a {110}-plane, and the piezoelectric film is a {100}-single-orientation film.

摘要翻译： 压电致动器包括在两个电极层和隔膜之间的压电膜。 假设：所有材料的每个弹性系数是各向同性的，并且通过电场的压电膜的失真量在所有面内方向都是各向同性的; 位于膜片表面上并且当施加预定电场以使压电膜失真时具有最大位移的点由PdeltaMAX表示; 并且位于具有PdeltaMAX作为中心并且具有与PdeltaMAX的位移的最小差异的参考圆的圆周上的点由PdeltaA表示，所述隔膜具有能够确定在连接PdeltaMAX的直线中设置的轴A1的形状 和PdeltaA，隔膜包括其中与A1正交并垂直于膜片表面上的轴线A2的平面为{110}面的单晶材料，并且压电膜为{100} - 单晶材料， 定向电影。

公开(公告)号：US20070215715A1

公开(公告)日：2007-09-20

申请号：US11683100

申请日：2007-03-07

申请人： Tetsuro Fukui ,  Kenichi Takeda ,  Katsumi Aoki ,  Toshihiro Ifuku ,  Takanori Matsuda ,  Hiroshi Funakubo ,  Shintaro Yokoyama ,  Takashi Katoda ,  Ken Nishida

发明人： Tetsuro Fukui ,  Kenichi Takeda ,  Katsumi Aoki ,  Toshihiro Ifuku ,  Takanori Matsuda ,  Hiroshi Funakubo ,  Shintaro Yokoyama ,  Takashi Katoda ,  Ken Nishida

IPC分类号： B05B1/08

CPC分类号： B41J2/14233 ,  B41J2202/03 ,  H01L41/1876

摘要： The invention is to provide an optical element satisfactory in transparency and characteristics as an optical modulation element, and a piezoelectric substance element satisfactory in precision and reproducibility as a fine element such as MEMS. The piezoelectric substance element includes, on a substrate, at least a first electrode, a piezoelectric substance film and a second electrode; wherein the piezoelectric substance film does not contain a layer-structured boundary plane; the crystal phase constituting the piezoelectric substance film comprises at least two of a tetragonal, a rhombohedral, a pseudocubic, an orthorhombic and a monoclinic; and the piezoelectric substance film includes, in a portion in which a change in the composition is within a range of ±2%, a portion where a proportion of the different crystal phases changes gradually in a thickness direction of the film.

摘要翻译： 本发明提供一种作为光调制元件的透明性和特性令人满意的光学元件，以及作为微细元件如MEMS的精度和再现性良好的压电体元件。 压电体元件在基板上至少包括第一电极，压电体膜和第二电极; 其中所述压电物质膜不包含层结构的边界面; 构成压电体膜的晶相包含四方晶，菱方，假立方，斜方晶和单斜晶中的至少两种; 并且压电体膜在组成的变化范围为±2％的范围内包括不同结晶相的比例在膜的厚度方向上逐渐变化的部分。

公开(公告)号：US20070046153A1

公开(公告)日：2007-03-01

申请号：US11464565

申请日：2006-08-15

申请人： Takanori Matsuda ,  Toshihiro Ifuku

发明人： Takanori Matsuda ,  Toshihiro Ifuku

IPC分类号： H01L41/187

CPC分类号： C04B35/491 ,  B41J2/161 ,  B41J2/1634 ,  B41J2/1642 ,  B41J2/1646 ,  B41J2202/03 ,  C04B2235/3208 ,  C04B2235/3215 ,  C04B2235/3227 ,  C04B2235/3258 ,  C04B2235/3294 ,  C04B2235/3298 ,  C04B2235/76 ,  C04B2235/762 ,  C04B2235/765 ,  C04B2235/768 ,  H01L41/18 ,  H01L41/1876 ,  Y10T29/42

摘要： A piezoelectric substrate of a perovskite-type oxide is expressed by a general formula of ABO3 having a laminate structure of a single crystal structure or a uniaxial crystal structure expressed by (Pb1-xMx)xm(ZryTi1-y)O3 (where M represents an element selected from La, Ca, Ba, Sr, Bi, Sb and W) and the laminate structure has a layered first crystal phase having a crystal structure selected from the tetragonal structure, the rhombohedral structure, the pseudocubic structure and the monoclinic structure, a layered second crystal phase having a crystal structure different from the crystal structure of said first crystal phase and a boundary layer arranged between said first crystal phase and said second crystal phase with a crystal structure gradually changing in a width direction of layer.

摘要翻译： 钙钛矿型氧化物的压电基板由具有单晶结构或单轴晶体结构的层叠结构的ABO 3 3通式表示，所述单晶结构由（Pb 1-x < （x，y）y（x）y（x）y（x） SUB>（其中M表示选自La，Ca，Ba，Sr，Bi，Sb和W的元素），层压结构具有层状结晶相，其具有从四方结构，菱方结构，假立方结构 结构和单斜晶体结构，具有不同于所述第一晶相的晶体结构的晶体结构的层状第二晶相和布置在所述第一晶相和所述第二晶相之间的边界层，晶体结构在宽度方向上逐渐变化 的层。

公开(公告)号：US20050189849A1

公开(公告)日：2005-09-01

申请号：US11062619

申请日：2005-02-23

申请人： Toshihiro Ifuku ,  Takanori Matsuda ,  Katsumi Aoki ,  Kenichi Takeda ,  Kiyotaka Wasa

发明人： Toshihiro Ifuku ,  Takanori Matsuda ,  Katsumi Aoki ,  Kenichi Takeda ,  Kiyotaka Wasa

IPC分类号： B41J2/045 ,  B41J2/01 ,  B41J2/055 ,  B41J2/135 ,  B41J2/14 ,  B41J2/145 ,  B41J2/16 ,  H01G4/12 ,  H01G4/33 ,  H01L41/18 ,  H01L41/187 ,  H01L41/22 ,  H01L41/316 ,  H02N2/00

CPC分类号： B41J2/14233 ,  B41J2202/03 ,  H01L41/1875 ,  H01L41/316 ,  H01L41/319

摘要： A dielectric element having a dielectric layer provided between an upper electrode layer and a lower electrode layer, wherein the dielectric layer has a first dielectric layer and a second dielectric layer mutually different in composition, and composition of at least one component of the first dielectric layer changes as to a thickness direction of the first dielectric layer in proximity to a boundary between the first dielectric layer and the second dielectric layer.

摘要翻译： 一种电介质元件，其具有设置在上电极层和下电极层之间的电介质层，其中所述电介质层具有第一介电层和第二介电层，所述第一电介质层和第二电介质层的组成相互不同，并且所述第一介电层的至少一个部件的组成 在第一介电层和第二介电层之间的边界附近的第一介电层的厚度方向的变化。

公开(公告)号：US06841490B2

公开(公告)日：2005-01-11

申请号：US10694053

申请日：2003-10-28

申请人： Akira Unno ,  Takao Yonehara ,  Tetsuro Fukui ,  Takanori Matsuda ,  Kiyotaka Wasa

发明人： Akira Unno ,  Takao Yonehara ,  Tetsuro Fukui ,  Takanori Matsuda ,  Kiyotaka Wasa

IPC分类号： B81C1/00 ,  C23C14/08 ,  H01L21/20 ,  H01L21/203 ,  H01L21/76 ,  H01L21/762 ,  H01L21/8246 ,  H01L21/8247 ,  H01L27/105 ,  H01L27/12 ,  H01L29/788 ,  H01L29/792 ,  H01L21/283 ,  H01L21/31 ,  H01L21/469

CPC分类号： H01L21/7624 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02502 ,  H01L21/02532 ,  Y10S438/90

摘要： A substrate for a semiconductor device includes a crystalline silicon substrate; an insulative silicon compound layer thereon and a crystalline insulation layer on the insulative silicon compound layer, wherein the insulative silicon compound layer contains not more than 10 at % of component element of a material constituting the crystalline insulation layer, the component element being provided in the insulative silicon compound layer by diffusion.

摘要翻译： 用于半导体器件的衬底包括晶体硅衬底; 其上的绝缘硅化合物层和绝缘硅化合物层上的结晶绝缘层，其中所述绝缘硅化合物层含有不超过构成所述结晶绝缘层的材料的组分元素的10at％，所述组分元素设置在 绝缘硅化合物层通过扩散。

公开(公告)号：US06653211B2

公开(公告)日：2003-11-25

申请号：US10068988

申请日：2002-02-11

申请人： Akira Unno ,  Takao Yonehara ,  Tetsuro Fukui ,  Takanori Matsuda ,  Kiyotaka Wasa

发明人： Akira Unno ,  Takao Yonehara ,  Tetsuro Fukui ,  Takanori Matsuda ,  Kiyotaka Wasa

IPC分类号： H01L2120

CPC分类号： H01L21/7624 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02502 ,  H01L21/02532 ,  Y10S438/90

摘要： A substrate for a semiconductor device includes a crystalline silicon substrate; an insulative silicon compound layer thereon and a crystalline insulation layer on the insulative silicon compound layer, wherein the insulative silicon compound layer contains not more than 10 at % of component element of a material constituting the crystalline insulation layer, the component element being provided in the insulative silicon compound layer by diffusion.

摘要翻译： 用于半导体器件的衬底包括晶体硅衬底; 其上的绝缘硅化合物层和绝缘硅化合物层上的结晶绝缘层，其中所述绝缘硅化合物层含有不超过构成所述结晶绝缘层的材料的组分元素的10at％，所述组分元素设置在 绝缘硅化合物层通过扩散。

公开(公告)号：US09150891B2

公开(公告)日：2015-10-06

申请号：US13497894

申请日：2010-09-24

申请人： Keishi Sakaguchi ,  Takanori Matsuda ,  Takumi Kobayashi ,  Makoto Ito ,  Naoki Nagano ,  Masahiro Hayashi ,  Daisuke Honda ,  Yosuke Taoka ,  Yuji Okita ,  Hitoshi Izumida ,  Shinichi Sugimoto

发明人： Keishi Sakaguchi ,  Takanori Matsuda ,  Takumi Kobayashi ,  Makoto Ito ,  Naoki Nagano ,  Masahiro Hayashi ,  Daisuke Honda ,  Yosuke Taoka ,  Yuji Okita ,  Hitoshi Izumida ,  Shinichi Sugimoto

IPC分类号： C12P7/64 ,  C12P21/06 ,  C12N1/00 ,  C12N1/10 ,  C12N15/00 ,  C11C3/00 ,  C12N9/02 ,  C12N15/79 ,  C12N15/82

CPC分类号： C12P7/6409 ,  C11C3/00 ,  C12N9/0071 ,  C12N9/0083 ,  C12N15/79 ,  C12N15/8201 ,  C12N15/8247 ,  C12P7/6427

摘要： Disclosed is a transformation method whereby an ability to produce a useful substance of a stramenopile can be improved. The method for transforming a stramenopile comprises transferring a foreign gene into the stramenopile which is a microorganism belonging to the class Labyrinthula, more specifically, to a genus Labyrinthula, Altornia, Aplanochytrium, Schizochytrium, Aurantiochytrium, Thraustochytrium, Ulkenia, etc. Said foreign gene, which is a gene relating to tolerance against an antibiotic, a colorimetric protein and/or a fatty acid desaturase (Δ5 desaturase gene, Δ12 desaturase gene and/or ω3 desaturase gene), is transferred by using the electroporation or gene-gun technique.

摘要翻译： 公开了能够提高产生有机物的能力的转化方法。 用于转化stramenopile的方法包括将外源基因转移到作为属于Labyrinthula类的微生物的地幔中，更具体地是属于Labyrinthula，Altornia，Aplanochytrium，Schizochytrium，Aurantiochytrium，Thraustochytrium，Ulkenia等。所述外源基因， 其是与抗生素，比色蛋白质和/或脂肪酸去饱和酶（＆Dgr。5去饱和酶基因，＆Dgr; 12去饱和酶基因和/或ω3去饱和酶基因）的耐受相关的基因通过使用电穿孔或基因 - 枪技术。