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    Piezoelectric substrate, piezoelectric element, liquid discharge head and liquid discharge apparatus
    9.
    发明授权
    Piezoelectric substrate, piezoelectric element, liquid discharge head and liquid discharge apparatus 有权
    压电基板，压电元件，液体排出头和液体排出装置

    公开(公告)号：US08137461B2

    公开(公告)日：2012-03-20

    申请号：US12554238

    申请日：2009-09-04

    申请人： Takanori Matsuda ,  Toshihiro Ifuku

    发明人： Takanori Matsuda ,  Toshihiro Ifuku

    IPC分类号： C30B25/06

    CPC分类号： C04B35/491 ,  B41J2/161 ,  B41J2/1634 ,  B41J2/1642 ,  B41J2/1646 ,  B41J2202/03 ,  C04B2235/3208 ,  C04B2235/3215 ,  C04B2235/3227 ,  C04B2235/3258 ,  C04B2235/3294 ,  C04B2235/3298 ,  C04B2235/76 ,  C04B2235/762 ,  C04B2235/765 ,  C04B2235/768 ,  H01L41/18 ,  H01L41/1876 ,  Y10T29/42

    摘要： A piezoelectric substrate of a perovskite-type oxide is expressed by a general formula of ABO3 having a laminate structure of a single crystal structure or a uniaxial crystal structure expressed by (Pb1-xMx)xm(ZryTi1-y)O3 (where M represents an element selected from La, Ca, Ba, Sr, Bi, Sb and W). The laminate structure has a first crystal phase layer having a crystal structure selected from a tetragonal structure, a rhombohedral structure, a pseudocubic structure and a monoclinic structure, a second crystal phase layer having a crystal structure different from the crystal structure of said first crystal phase layer and a boundary layer arranged between the first crystal phase layer and the second crystal phase layer with a crystal structure gradually changing in a thickness direction of the layer. The thicknesses of the first and second crystal phase layer differ.

    摘要翻译： 钙钛矿型氧化物的压电基板由具有由（Pb1-xMx）xm（ZryTi1-y）O3表示的单晶结构或单轴晶体结构的层叠结构的ABO3的通式表示（其中M表示 元素选自La，Ca，Ba，Sr，Bi，Sb和W）。 层叠结构具有从四方结构，菱方结构，假立方结构和单斜晶系结构中选择的晶体结构的第一结晶相层，具有与所述第一结晶相的晶体结构不同的晶体结构的第二结晶相层 层和设置在第一结晶相层和第二结晶相层之间的边界层，其晶体结构在层的厚度方向上逐渐变化。 第一和第二晶相层的厚度不同。

    Piezoelectric element, ink jet head and producing method for piezoelectric element
    10.
    发明授权
    Piezoelectric element, ink jet head and producing method for piezoelectric element 有权
    压电元件，喷墨头和压电元件的制造方法

    公开(公告)号：US08033654B2

    公开(公告)日：2011-10-11

    申请号：US12893726

    申请日：2010-09-29

    申请人： Takanori Matsuda ,  Toshihiro Ifuku ,  Kenichi Takeda ,  Katsumi Aoki

    发明人： Takanori Matsuda ,  Toshihiro Ifuku ,  Kenichi Takeda ,  Katsumi Aoki

    IPC分类号： B41J2/045

    CPC分类号： B41J2/14233 ,  B41J2/161 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1642 ,  B41J2/1646 ,  H01L41/0815 ,  H01L41/0973 ,  H01L41/1876 ,  H01L41/316

    摘要： A piezoelectric element includes a piezoelectric film disposed on a substrate and a pair of electrodes disposed in contact with the piezoelectric film and utilizing a bending mode. The piezoelectric film includes domains constituted of a tetragonal crystal and including an a-domain which is formed by a crystal having a (100) plane parallel to the film surface of the piezoelectric film, the a-domains include an A-domain having a normal axis of (001) plane substantially parallel to a principal bending direction of the piezoelectric film and a B-domain having a normal axis of (001) plane substantially perpendicular to the principal bending direction of the piezoelectric film, and the A-domains have a volume proportion larger than 50 vol % with respect to the sum of the volume of the A-domains and the volume of the B-domains.

    摘要翻译： 压电元件包括​​设置在基板上的压电膜和与压电膜接触设置并利用弯曲模式的一对电极。 该压电薄膜包括由四方晶体构成的并由具有与压电薄膜的膜表面平行的（100）面的晶体形成的a畴的a畴，a畴包括具有正常 基本上平行于压电薄膜的主弯曲方向的（001）面的轴线和与压电薄膜的主弯曲方向垂直的法线轴（001）面的B域，A畴具有 体积比例大于50体积％，相对于A结构域的体积和B结构域的体积的总和。