Laser assembly and inspection system using monolithic bandwidth narrowing apparatus
    41.
    发明授权
    Laser assembly and inspection system using monolithic bandwidth narrowing apparatus 有权
    激光组装检测系统采用单片带宽变窄装置

    公开(公告)号:US09419407B2

    公开(公告)日:2016-08-16

    申请号:US14859122

    申请日:2015-09-18

    Abstract: A pulsed UV laser assembly includes a partial reflector or beam splitter that divides each fundamental pulse into two sub-pulses and directs one sub-pulse to one end of a Bragg grating and the other pulse to the other end of the Bragg grating (or another Bragg grating) such that both sub-pulses are stretched and receive opposing (positive and negative) frequency chirps. The two stretched sub-pulses are combined to generate sum frequency light having a narrower bandwidth than could be obtained by second-harmonic generation directly from the fundamental. UV wavelengths may be generated directly from the sum frequency light or from a harmonic conversion scheme incorporating the sum frequency light. The UV laser may further incorporate other bandwidth reducing schemes. The pulsed UV laser may be used in an inspection or metrology system.

    Abstract translation: 脉冲UV激光器组件包括部分反射器或分束器,其将每个基本脉冲分成两个子脉冲,并将一个子脉冲引导到布拉格光栅的一端,将另一个脉冲引导到布拉格光栅的另一端(或另一个 布拉格光栅),使得两个子脉冲都被拉伸并接收相对(正和负)频率的线性调频脉冲。 两个延伸的子脉冲被组合以产生具有比通过直接从基波的二次谐波产生可以获得的窄带宽的和频光。 紫外波长可以直接从和频光或从包含和频光的谐波转换方案中产生。 UV激光器可以进一步并入其他带宽减小方案。 脉冲UV激光可用于检测或计量系统。

    193NM Laser And Inspection System
    45.
    发明申请
    193NM Laser And Inspection System 有权
    193NM激光和检测系统

    公开(公告)号:US20140204963A1

    公开(公告)日:2014-07-24

    申请号:US14158615

    申请日:2014-01-17

    Abstract: A laser for generating an output wavelength of approximately 193.4 nm includes a fundamental laser, an optical parametric generator, a fourth harmonic generator, and a frequency mixing module. The optical parametric generator, which is coupled to the fundamental laser, can generate a down-converted signal. The fourth harmonic generator, which may be coupled to the optical parametric generator or the fundamental laser, can generate a fourth harmonic. The frequency mixing module, which is coupled to the optical parametric generator and the fourth harmonic generator, can generate a laser output at a frequency equal to a sum of the fourth harmonic and twice a frequency of the down-converted signal.

    Abstract translation: 用于产生约193.4nm的输出波长的激光器包括基本激光器,光参量发生器,第四谐波发生器和混频模块。 耦合到基本激光器的光学参数发生器可以产生下变频信号。 可以耦合到光学参数发生器或基本激光器的第四谐波发生器可以产生四次谐波。 耦合到光参量发生器和第四谐波发生器的混频模块可产生频率等于下变频信号频率的四次谐波和两倍的频率的激光输出。

    Method and system for determining one or more optical characteristics of structure of a semiconductor wafer
    46.
    发明授权
    Method and system for determining one or more optical characteristics of structure of a semiconductor wafer 有权
    用于确定半导体晶片的结构的一个或多个光学特性的方法和系统

    公开(公告)号:US08675188B2

    公开(公告)日:2014-03-18

    申请号:US13734506

    申请日:2013-01-04

    Abstract: Determination of one or more optical characteristics of a structure of a semiconductor wafer includes measuring one or more optical signals from one or more structures of a sample, determining a background optical field associated with a reference structure having a selected set of nominal characteristics based on the one or more structures, determining a correction optical field suitable for at least partially correcting the background field, wherein a difference between the measured one or more optical signals and a signal associated with a sum of the correction optical field and the background optical field is below a selected tolerance level, and extracting one or more characteristics associated with the one or more structures utilizing the correction optical field.

    Abstract translation: 半导体晶片的结构的一个或多个光学特性的确定包括测量来自样品的一个或多个结构的一个或多个光学信号,基于所述样品的一个或多个结构确定与具有所选择的一组标称特征的参考结构相关联的背景光学场 一个或多个结构,确定适合于至少部分校正背景场的校正光场,其中所测量的一个或多个光信号与与校正光场和背景光场之和相关联的信号之间的差异在以下 选择的公差等级,以及利用所述校正光场提取与所述一个或多个结构相关联的一个或多个特征。

    Electron source
    48.
    发明授权

    公开(公告)号:US10558123B2

    公开(公告)日:2020-02-11

    申请号:US16161010

    申请日:2018-10-15

    Abstract: An electron source is formed on a silicon substrate having opposing first and second surfaces. At least one field emitter is prepared on the second surface of the silicon substrate to enhance the emission of electrons. To prevent oxidation of the silicon, a thin, contiguous boron layer is disposed directly on the output surface of the field emitter using a process that minimizes oxidation and defects. The field emitter can take various shapes such as pyramids and rounded whiskers. One or several optional gate layers may be placed at or slightly lower than the height of the field emitter tip in order to achieve fast and accurate control of the emission current and high emission currents. The field emitter can be p-type doped and configured to operate in a reverse bias mode or the field emitter can be n-type doped.

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