摘要:
A motor starter is disclosed. The motor starter includes control circuitry integrally arranged with at least one current path and a processor included in the control circuitry. The motor starter further includes at least one processor algorithm residing on the processor, the at least one processor algorithm containing instructions to monitor characteristics of current on the at least one current path and to provide data pertaining to a condition of the at least one current path. The motor starter further includes a micro electromechanical system (MEMS) switch disposed on the at least one current path, the MEMS switch responsive to the control circuitry to facilitate the control of an electrical current, passing through the at least one current path.
摘要:
An etchant including a halogenated salt, such as Cryolite (Na3AlF6) or potassium tetrafluoro borate (KBF4), is provided. The salt may be present in the etchant in an amount sufficient to etch a substrate and may have a melt temperature of greater than about 200 degrees Celsius. A method of wet etching may include contacting an etchant to at least one surface of a support layer of a multi-layer laminate, wherein the support layer may include aluminum oxide; or contacting an etchant to at least one surface of a support layer of a multi-layer laminate, wherein the etchant may include Cryolite (Na3AlF6), potassium tetrafluoro borate (KBF4), or both; and etching at least a portion of the support layer. The method may provide a laminate produced by growing a crystal onto an aluminum oxide support layer, and chemically removing at least a portion of the support layer by wet etch. An electronic device, optical device or combined device including the laminate is provided.
摘要:
A gating voltage control system and method are provided for electrostatically actuating a micro-electromechanical systems (MEMS) device, e.g., a MEMS switch. The device may comprise an electrostatically responsive actuator movable through a gap for actuating the device to a respective actuating condition corresponding to one of a first actuating condition (e.g., a closed switching condition) and a second actuating condition (e.g., an open switching condition). The gating voltage control system may comprise a drive circuit electrically coupled to a gate terminal of the device to apply a gating voltage. The gating voltage control system may further comprise a controller electrically coupled to the drive circuit to control the gating voltage applied to the gating terminal in accordance with a gating voltage control sequence. The gating voltage control sequence may comprise a first interval for ramping up the gating voltage to a voltage level for producing an electrostatic force sufficient to accelerate the actuator through a portion of the gap to be traversed by the actuator to reach a respective actuating condition. The gating voltage control sequence may further comprise a second interval for ramping down the gating voltage to a level sufficient to reduce the electrostatic force acting on the movable actuator. This allows reducing the amount of force at which the actuator engages a contact for establishing the first actuating condition, or avoiding an overshoot position of the actuator while reaching the second actuating condition.
摘要:
Electrical distribution systems implementing micro-electromechanical system based switching devices. Exemplary embodiments include a method in an electrical distribution system, the method including determining if there is a fault condition in a branch of the electrical distribution system, the branch having a plurality of micro electromechanical system (MEMS) switches, re-closing a MEMS switch of the plurality of MEMS switches, which is furthest upstream in the branch and determining if the fault condition is still present. Exemplary embodiments include an electrical distribution system, including an input port for receiving a source of power, a main distribution bus electrically coupled to the input port, a service disconnect MEMS switch disposed between and coupled to the input port and the main distribution bus and a plurality of electrical distribution branches electrically coupled to the main distribution bus.
摘要:
One embodiment of the invention comprises a MEMS structure further comprising: a MEMS device (240) having a first surface with one or more contact structures (244, 245 and 246) thereon connected to functional elements of the MEMS device (240), a dielectric layer (100) overlying the first surface defining openings therein through which the contact structures (244, 245 and 246) are exposed, a patterned metallization layer (254, 255 and 256) comprising conductive material extending from the contact structures (244, 245 and 246) through the openings in the dielectric layer (100) and onto a surface of the dielectric layer and a first heat sink (190) in thermal communication with the metallization layer (254, 255 and 256).
摘要:
A switching system is provided. The switching system includes electromechanical switching circuitry, such as a micro-electromechanical system switching circuitry. The system may further include solid state switching circuitry coupled in a parallel circuit with the electromechanical switching circuitry, and a controller coupled to the electromechanical switching circuitry and the solid state switching circuitry. The controller may be configured to perform selective switching of a load current between the electromechanical switching circuitry and the solid state switching circuitry in response to a load current condition appropriate to an operational capability of a respective one of the switching circuitries.
摘要:
MEMS-based switching module, as may be electrically connected to other such modules in a series circuit, to achieve a desired voltage rating is provided. A switching array may be made up of a plurality of such switching modules (e.g., used as building blocks of the switching array) with circuitry configured so that any number of modules can be connected in series to achieve the desired voltage rating (e.g., voltage scalability).
摘要:
A method for forming smooth walled, prismatically-profiled through-wafer vias and articles formed through the method. An etch stop material is provided on a wafer, which may be a silicon wafer. A mask material is provided on the etch stop material and patterned in such a way as to lead to the formation of vias that have at least one pair of opposing side walls that run parallel to a plane in the wafer. A wet etchant, such as potassium hydroxide, is used to etch vias in the wafer. The use of a wet etchant leads to the formation of smooth side walls. This method allows an aspect ratio of height versus width of the vias of greater than 75 to 1.
摘要:
A process cycles between etching and passivating chemistries to create rough sidewalls that are converted into small structures. In one embodiment, a mask is used to define lines in a single crystal silicon wafer. The process creates ripples on sidewalls of the lines corresponding to the cycles. The lines are oxidized in one embodiment to form a silicon wire corresponding to each ripple. The oxide is removed in a further embodiment to form structures ranging from micro sharp tips to photonic arrays of wires. Fluidic channels are formed by oxidizing adjacent rippled sidewalls. The same mask is also used to form other structures for MEMS devices.
摘要:
An electrical through-connection, or via, that passes through a substrate to a bus on a first surface of the substrate. The via may be configured with an interlock such that the electrically conductive core of the via is constrained to thermally expand towards the second surface, away from the bus, thus preventing damage to the bus. The interlock may be a local constriction or enlargement of the via near the first surface of the substrate. The via may be greater in length along the bus than a unit spacing of beams in a parallel microswitch array actuated in unison along the bus. The via may be narrower in width than in length, and may form a trapezoidal geometry that is larger at the second surface of the substrate than at the first surface.