公开(公告)号：US20060205231A1

公开(公告)日：2006-09-14

申请号：US11368481

申请日：2006-03-07

申请人： Pao-Hwa Chou ,  Kazuhide Hasebe

发明人： Pao-Hwa Chou ,  Kazuhide Hasebe

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/02271 ,  C23C16/36 ,  C23C16/45523 ,  C23C16/45578 ,  C23C16/515 ,  H01L21/02211 ,  H01L21/0228 ,  H01L21/3144 ,  H01L21/3148 ,  H01L21/3185 ,  H01L21/76829

摘要： An insulating film is formed on a target substrate by CVD, in a process field to be selectively supplied with a first process gas containing a silane family gas, a second process gas containing a nitriding or oxynitriding gas, and a third process gas containing a carbon hydride gas. This method alternately includes first to fourth steps. The first step performs supply of the first and third process gases to the field while stopping supply of the second process gas to the process field. The second step stops supply of the first to third process gases to the field. The third step performs supply of the second process gas to the field while stopping supply of the first and third process gases to the field. The fourth step stops supply of the first to third process gases to the field.

摘要翻译： 通过CVD在目标基板上形成绝缘膜，在选择性地供给包含硅烷族气体的第一工艺气体，含有氮化或氮氧化气体的第二工艺气体和含有碳的第三工艺气体的工艺领域中， 氢化物气体。 该方法交替地包括第一至第四步骤。 第一步骤是将第一和第三工艺气体供应到现场，同时停止向工艺场供应第二工艺气体。 第二步停止向现场供应第一至第三工艺气体。 第三步骤在停止向场提供第一和第三处理气体的同时，向现场供应第二处理气体。 第四步停止向现场供应第一至第三处理气体。

公开(公告)号：US20060032443A1

公开(公告)日：2006-02-16

申请号：US11188736

申请日：2005-07-26

申请人： Kazuhide Hasebe ,  Mitsuhiro Okada ,  Pao-Hwa Chou ,  Chaeho Kim ,  Jun Ogawa

发明人： Kazuhide Hasebe ,  Mitsuhiro Okada ,  Pao-Hwa Chou ,  Chaeho Kim ,  Jun Ogawa

IPC分类号： C23C16/00

CPC分类号： C23C16/45531 ,  C23C16/30 ,  C23C16/345 ,  C23C16/45525 ,  C23C16/45546 ,  C23C16/45578 ,  C23C16/507

摘要： An impurity-doped silicon nitride or oxynitride film is formed on a target substrate by CVD, in a process field to be selectively supplied with a first process gas containing a silane family gas, a second process gas containing a nitriding or oxynitriding gas, and a third process gas containing a doping gas. This method alternately includes first to fourth steps. The first step performs supply of the first and third process gases to the field. The second step stops supply of the first to third process gases to the field. The third step performs supply of the second process gas to the field while stopping supply of the first and third process gases to the field, and includes an excitation period of exciting the second process gas by an exciting mechanism. The fourth step stops supply of the first to third process gases to the field.

摘要翻译： 在目标衬底上通过CVD形成杂质掺杂的氮化硅或氧氮化物膜，在选择性地供给含有硅烷族气体的第一工艺气体，含有氮化或氮氧化气体的第二工艺气体的工艺领域中， 含有掺杂气体的第三工艺气体。 该方法交替地包括第一至第四步骤。 第一步向现场供应第一和第三工艺气体。 第二步停止向现场供应第一至第三工艺气体。 第三步骤在停止向场施加第一和第三处理气体的同时停止向现场供应第二处理气体，并且包括通过激励机构激励第二处理气体的激发周期。 第四步停止向现场供应第一至第三处理气体。

公开(公告)号：US08658247B2

公开(公告)日：2014-02-25

申请号：US13189648

申请日：2011-07-25

申请人： Toshiyuki Ikeuchi ,  Pao-Hwa Chou ,  Kazuya Yamamoto ,  Kentaro Sera

发明人： Toshiyuki Ikeuchi ,  Pao-Hwa Chou ,  Kazuya Yamamoto ,  Kentaro Sera

IPC分类号： C23C16/40

CPC分类号： H01L21/0228 ,  C23C16/401 ,  C23C16/45546 ,  C23C16/45557 ,  H01L21/02164 ,  H01L21/02219

摘要： A disclosed film deposition method comprises alternately repeating an adsorption step and a reaction step with an interval period therebetween. The adsorption step includes opening a first on-off valve of a source gas supplying system for a predetermined time period thereby to supply a source gas to a process chamber, closing the first valve after the predetermined time period elapses, and confining the source gas within the process tube, thereby allowing the source gas to be adsorbed on an object to be processed, while a third on-off valve of a vacuum evacuation system is closed. The reaction step includes opening a second on-off valve of a reaction gas supplying system thereby to supply a reaction gas to the process chamber, thereby allowing the source gas and the reaction gas to react with each other thereby to produce a thin film on the object to be processed.

摘要翻译： 所公开的膜沉积方法包括以间隔期交替地重复吸附步骤和反应步骤。 吸附步骤包括打开源气体供应系统的第一开关阀预定时间段，从而将源气体供应到处理室，在经过预定时间段之后关闭第一阀门，并将源气体限制在 处理管，从而允许源气体被吸附在待处理物体上，而真空排气系统的第三开关阀关闭。 反应步骤包括打开反应气体供应系统的第二开关阀，从而将反应气体提供给处理室，从而使源气体和反应气体彼此反应，从而在其上产生薄膜 对象被处理。

公开(公告)号：US20120269969A1

公开(公告)日：2012-10-25

申请号：US13401919

申请日：2012-02-22

申请人： Keisuke SUZUKI ,  Pao-Hwa Chou ,  Te Ching Chang

发明人： Keisuke SUZUKI ,  Pao-Hwa Chou ,  Te Ching Chang

IPC分类号： C23C16/455

CPC分类号： H01L21/0228 ,  C23C16/345 ,  C23C16/45527 ,  C23C16/52 ,  H01L21/0217

摘要： A film deposition method of depositing a thin film by alternately supplying at least a first source gas and a second source gas to a substrate is disclosed. The film deposition method includes steps of evacuating a process chamber where the substrate is accommodated, without supplying any gas to the process chamber; supplying an inert gas to the process chamber until a pressure within the process chamber becomes a predetermined pressure; supplying the first source gas to the process chamber filled with the inert gas at the predetermined pressure without evacuating the process chamber; stopping supplying the first source gas to the process chamber and evacuating the process chamber; supplying the second source gas to the process chamber; and stopping supplying the second source gas to the process chamber and evacuating the process chamber.

摘要翻译： 公开了一种通过交替地将至少第一源气体和第二源气体供应到基底而沉积薄膜的成膜方法。 膜沉积方法包括以下步骤：将处理室排出到容纳基板的步骤，而不向处理室供应任何气体; 向所述处理室供应惰性气体，直到所述处理室内的压力变为预定压力; 将第一源气体以预定压力供给到填充有惰性气体的处理室，而不需要排空处理室; 停止向处理室供应第一源气体并抽空处理室; 将第二源气体供应到处理室; 并停止向处理室供应第二源气体并抽空处理室。

公开(公告)号：US20110241085A1

公开(公告)日：2011-10-06

申请号：US12751891

申请日：2010-03-31

申请人： David L. O'Meara ,  Anthony Dip ,  Aelan Mosden ,  Pao-Hwa Chou ,  Richard A. Conti

发明人： David L. O'Meara ,  Anthony Dip ,  Aelan Mosden ,  Pao-Hwa Chou ,  Richard A. Conti

IPC分类号： H01L29/78 ,  H01L21/311

CPC分类号： H01L29/4983 ,  H01L29/665 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/7833

摘要： A semiconducting device with a dual sidewall spacer and method of forming are provided. The method includes: depositing a first spacer layer over a patterned structure, the first spacer layer having a seam propagating through a thickness of the first spacer layer near an interface region of a surface of the substrate and a sidewall of the patterned structure, etching the first spacer layer to form a residual spacer at the interface region, where the residual spacer coats less than the entirety of the sidewall of the patterned structure, depositing a second spacer layer on the residual spacer and on the sidewall of the patterned structure not coated by the residual spacer, the second spacer layer being seam-free on the seam of the residual spacer, and etching the second spacer layer to form a second spacer coating the residual spacer and coating the sidewall of the patterned structure not coated by the residual spacer.

摘要翻译： 提供了具有双侧壁间隔件和成形方法的半导体器件。 该方法包括：在图案化结构上沉积第一间隔层，第一间隔层具有在衬底的表面的界面区附近传播穿过第一间隔层的厚度的接缝和图案化结构的侧壁，蚀刻 第一间隔层，以在界面区域处形成残留间隔物，其中残余间隔物涂覆小于图案化结构的侧壁的整体，在剩余间隔物上和在图案化结构的侧壁上沉积第二间隔层， 所述剩余间隔物，所述第二间隔层在所述残余间隔物的接缝上是无缝的，并且蚀刻所述第二间隔层以形成涂覆所述剩余间隔物并涂覆未被所述残留间隔物涂覆的所述图案化结构的侧壁的第二间隔物。

公开(公告)号：US08734901B2

公开(公告)日：2014-05-27

申请号：US13401919

申请日：2012-02-22

申请人： Keisuke Suzuki ,  Pao-Hwa Chou ,  Te ching Chang

发明人： Keisuke Suzuki ,  Pao-Hwa Chou ,  Te ching Chang

IPC分类号： C23C16/00

CPC分类号： H01L21/0228 ,  C23C16/345 ,  C23C16/45527 ,  C23C16/52 ,  H01L21/0217

摘要： A film deposition method of depositing a thin film by alternately supplying at least a first source gas and a second source gas to a substrate is disclosed. The film deposition method includes steps of evacuating a process chamber where the substrate is accommodated, without supplying any gas to the process chamber; supplying an inert gas to the process chamber until a pressure within the process chamber becomes a predetermined pressure; supplying the first source gas to the process chamber filled with the inert gas at the predetermined pressure without evacuating the process chamber; stopping supplying the first source gas to the process chamber and evacuating the process chamber; supplying the second source gas to the process chamber; and stopping supplying the second source gas to the process chamber and evacuating the process chamber.

摘要翻译： 公开了一种通过交替地将至少第一源气体和第二源气体供应到基底而沉积薄膜的成膜方法。 膜沉积方法包括以下步骤：将处理室排出到容纳基板的步骤，而不向处理室供应任何气体; 向所述处理室供应惰性气体，直到所述处理室内的压力变为预定压力; 将第一源气体以预定压力供给到填充有惰性气体的处理室，而不需要排空处理室; 停止向处理室供应第一源气体并抽空处理室; 将第二源气体供应到处理室; 并停止向处理室供应第二源气体并抽空处理室。

公开(公告)号：US08673725B2

公开(公告)日：2014-03-18

申请号：US12751926

申请日：2010-03-31

申请人： David L. O'Meara ,  Anthony Dip ,  Aelan Mosden ,  Pao-Hwa Chou ,  Richard A Conti

发明人： David L. O'Meara ,  Anthony Dip ,  Aelan Mosden ,  Pao-Hwa Chou ,  Richard A Conti

IPC分类号： H01L29/78

CPC分类号： H01L21/28247 ,  H01L29/6656

摘要： A semiconducting device with a multilayer sidewall spacer and method of forming are described. In one embodiment, the method includes providing a substrate containing a patterned structure on a surface of the substrate and depositing a first spacer layer over the patterned structure at a first substrate temperature, where the first spacer layer contains a first material. The method further includes depositing a second spacer layer over the patterned substrate at a second substrate temperature that is different from the first substrate temperature, where the first and second materials contain the same chemical elements, and the depositing steps are performed in any order. The first and second spacer layers are then etched to form the multilayer sidewall spacer on the patterned structure.

摘要翻译： 描述了具有多层侧壁间隔件和形成方法的半导体器件。 在一个实施例中，该方法包括在衬底的表面上提供含有图案化结构的衬底，并且在第一衬底温度下在第一衬底温度下沉积在图案化结构上的第一间隔层，其中第一间隔层包含第一材料。 该方法还包括在不同于第一衬底温度的第二衬底温度下在图案化衬底上沉积第二间隔层，其中第一和第二材料含有相同的化学元素，并且沉积步骤以任何顺序进行。 然后蚀刻第一和第二间隔层以在图案化结构上形成多层侧壁间隔物。

公开(公告)号：US08664102B2

公开(公告)日：2014-03-04

申请号：US12751891

申请日：2010-03-31

申请人： David L. O'Meara ,  Anthony Dip ,  Aelan Mosden ,  Pao-Hwa Chou ,  Richard A Conti

发明人： David L. O'Meara ,  Anthony Dip ,  Aelan Mosden ,  Pao-Hwa Chou ,  Richard A Conti

IPC分类号： H01L21/3205 ,  H01L21/4763

CPC分类号： H01L29/4983 ,  H01L29/665 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/7833

摘要： A semiconducting device with a dual sidewall spacer and method of forming are provided. The method includes: depositing a first spacer layer over a patterned structure, the first spacer layer having a seam propagating through a thickness of the first spacer layer near an interface region of a surface of the substrate and a sidewall of the patterned structure, etching the first spacer layer to form a residual spacer at the interface region, where the residual spacer coats less than the entirety of the sidewall of the patterned structure, depositing a second spacer layer on the residual spacer and on the sidewall of the patterned structure not coated by the residual spacer, the second spacer layer being seam-free on the seam of the residual spacer, and etching the second spacer layer to form a second spacer coating the residual spacer and coating the sidewall of the patterned structure not coated by the residual spacer.

摘要翻译： 提供了具有双侧壁间隔件和成形方法的半导体器件。 该方法包括：在图案化结构上沉积第一间隔层，第一间隔层具有在衬底的表面的界面区附近传播穿过第一间隔层的厚度的接缝和图案化结构的侧壁，蚀刻 第一间隔层，以在界面区域处形成残留间隔物，其中残余间隔物涂覆小于图案化结构的侧壁的整体，在剩余间隔物上和在图案化结构的侧壁上沉积第二间隔层， 所述剩余间隔物，所述第二间隔层在所述残余间隔物的接缝上是无缝的，并且蚀刻所述第二间隔层以形成涂覆所述剩余间隔物并涂覆未被所述残留间隔物涂覆的所述图案化结构的侧壁的第二间隔物。

公开(公告)号：US20120164327A1

公开(公告)日：2012-06-28

申请号：US13334382

申请日：2011-12-22

申请人： Jun SATO ,  Pao-Hwa Chou

发明人： Jun SATO ,  Pao-Hwa Chou

IPC分类号： C23C16/40 ,  C23C16/52

CPC分类号： H01L21/02304 ,  C23C16/0272 ,  C23C16/0281 ,  C23C16/402 ,  C23C16/45525 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/02299 ,  H01L21/02312

摘要： A film-forming method includes forming a tungsten film or a tungsten oxide film on an object to be processed, forming a seed layer on the tungsten film or the tungsten oxide film, and forming a silicon oxide film on the seed layer, wherein the seed layer formed on the tungsten film or the tungsten oxide film is formed by heating the object to be processed and supplying an aminosilane-based gas to a surface of the tungsten film or the tungsten oxide film.

摘要翻译： 成膜方法包括在被处理物上形成钨膜或氧化钨膜，在钨膜或氧化钨膜上形成种子层，在种子层上形成氧化硅膜，其中种子 通过加热被处理物并将氨基硅烷系气体供给到钨膜或氧化钨膜的表面，形成在钨膜或氧化钨膜上形成的层。

公开(公告)号：US20110241128A1

公开(公告)日：2011-10-06

申请号：US12751926

申请日：2010-03-31

申请人： David L. O'Meara ,  Anthony Dip ,  Aelan Mosden ,  Pao-Hwa Chou ,  Richard A. Conti

发明人： David L. O'Meara ,  Anthony Dip ,  Aelan Mosden ,  Pao-Hwa Chou ,  Richard A. Conti

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L21/28247 ,  H01L29/6656

摘要： A semiconducting device with a multilayer sidewall spacer and method of forming are described. In one embodiment, the method includes providing a substrate containing a patterned structure on a surface of the substrate and depositing a first spacer layer over the patterned structure at a first substrate temperature, where the first spacer layer contains a first material. The method further includes depositing a second spacer layer over the patterned substrate at a second substrate temperature that is different from the first substrate temperature, where the first and second materials contain the same chemical elements, and the depositing steps are performed in any order. The first and second spacer layers are then etched to form the multilayer sidewall spacer on the patterned structure.

摘要翻译： 描述了具有多层侧壁间隔件和形成方法的半导体器件。 在一个实施例中，该方法包括在衬底的表面上提供含有图案化结构的衬底，并且在第一衬底温度下在第一衬底温度下沉积在图案化结构上的第一间隔层，其中第一间隔层包含第一材料。 该方法还包括在不同于第一衬底温度的第二衬底温度下在图案化衬底上沉积第二间隔层，其中第一和第二材料含有相同的化学元素，并且沉积步骤以任何顺序进行。 然后蚀刻第一和第二间隔层以在图案化结构上形成多层侧壁间隔物。