摘要:
The present invention provides an optimum layer structure for a piezoelectric actuator in which (100) orientation strontium ruthenate is used as a bottom electrode. The piezoelectric actuator comprises a Si substrate 20, a diaphragm 30 comprising (110) or (100) orientation strontium oxide which is formed thereon by way of epitaxial growth, a bottom electrode 42 comprising (100) orientation strontium ruthenate having a perovskite structure, a piezoelectric layer 43 comprising (100) orientation PZT, and a top electrode 44.
摘要:
An optical panel having superior environment resisting properties is provided. An increase in electrical resistance is prevented by heat treating the electrode in a vacuum at a temperature between about 200.degree. and 600.degree. C. Electrolytic corrosion resistance of the panel is provided by coating at least the non-conductive portions of the terminal portions of the panel with a water-repellant material.
摘要:
A method for producing a dielectric film, comprising: a coating step of coating a colloidal solution containing an organometallic compound containing a metal constituting a dielectric film containing at least a lead component to form a dielectric precursor film; a drying step of drying the dielectric precursor film; a degreasing step of degreasing the dielectric precursor film; and a firing step of firing the dielectric precursor film to form a dielectric film, and wherein the drying step includes a first drying step of heating the dielectric precursor film to a temperature lower than the boiling point of a solvent, which is a main solvent of the material, and holding the dielectric precursor film at the temperature for a certain period of time to dry the dielectric precursor film, and a second drying step of drying the dielectric precursor film at a temperature in the range of 140° C., to 170° C., the degreasing step is performed at a degreasing temperature of 350° C. to 450° C. and at a heating-up rate of 15 [° C./sec] or higher, and the firing step is performed at a heating-up rate of 100 [° C./sec] to 150 [° C./sec].
摘要:
A method of manufacturing a dielectric film includes a coating step of coating sol made of an organic metal compound and forming a dielectric precursor film, a drying step of drying the dielectric precursor film, a degreasing step of degreasing the dielectric precursor film, and a baking step of baking the dielectric precursor film to form a dielectric film. The drying step includes a first drying step of drying the dielectric precursor film by heating the dielectric precursor film to a temperature lower than a boiling point of a solvent which is a main solvent of the sol and then holding the dielectric precursor film at the temperature for a predetermined period of time, and a second drying step of drying the dielectric precursor film further by reheating the dielectric precursor film and then holding the dielectric precursor film at the temperature for a predetermined period of time.
摘要:
A piezoelectric device including: a substrate; a lower electrode formed over the substrate; a piezoelectric layer formed over the lower electrode and including lead zirconate titanate; and an upper electrode formed over the piezoelectric layer, the lead zirconate titanate having a half-width of a peak of a (100) plane measured by an X-ray diffraction rocking curve method of 10 degrees or more and 25 degrees or less.
摘要:
Disclosed is an actuator device which includes a vibration plate and a piezoelectric element. The vibration plate includes an elastic film which is made of silicon oxide (SiO2) and which is formed on a substrate while the piezoelectric element is formed on the vibration plate and including a lower electrode, a piezoelectric layer and an upper electrode. The vibration plate has such a stress as to give a tensile stress between 300 MPa and 500 MPa, inclusive, to the piezoelectric element that is in a state of being displaced.
摘要:
Provided are a composite for forming a ferroelectric thin film which is a colloidal solution applicable to the MOD method and capable of maintaining excellent dispersion stability and preservation stability of an organometallic compound over a long term, a ferroelectric thin film, a method of manufacturing a ferroelectric thin film, and a liquid-jet head. A composite for forming a ferroelectric thin film, which is made of a colloidal solution applicable to the MOD method containing an organometallic compound including metal constituting a ferroelectric thin film, and contains water other than water of crystallization in the organometallic compound is used when forming a ferroelectric thin film in accordance with the MOD method.
摘要:
A device for drying substrates which stores a plurality of substrate (1) and which comprises a processing container (3) to which cleaning fluid (2) after cleaning the substrates (1) is drained and an injection nozzle (5) for injecting drying fluid located at the terminating part of a feed pipe (4) through which liquid drying fluid is supplied, whereby an exhaust equipment is eliminated or simplified, and the drying fluid is fed smoothly.
摘要:
A manufacturing method of a liquid jet head having increased the durability and reliability thereof by preventing delamination of a vibration plate is provided. At least the following two steps are included: a vibration plate forming step which includes at least a step of forming a zirconium layer on one side of a passage-forming substrate by sputtering so that a degrees of orientation to a (002) plane of the surface becomes equal to 80% or more, as well as forming an insulation film made of zirconium oxide and constituting a part of the vibration plate by subjecting the zirconium layer to thermal oxidation; and a piezoelectric element forming step of forming piezoelectric elements on the vibration plate.
摘要:
A piezoelectric element having a piezoelectric film where the difference in the quantity of lead along the thickness of the film is minimized. The film is obtained by first applying, at least once, a first sol for use in forming a PZT film on a substrate having a lower electrode formed thereon. Second, applying a second sol having the greater lead content than the first sol. Third, subjecting these films to heat treatment at a predetermined temperature at least once. The second sol has a composition capable of forming a piezoelectric film having a Perovskite structure expressed generally by AxByO3, and the content of material constituting the A site of the first sol is greater than what constitutes the A site of the second sol.