公开(公告)号：US6133074A

公开(公告)日：2000-10-17

申请号：US114813

申请日：1998-07-13

申请人： Satoshi Ishida ,  Yasuo Nakahara ,  Hiroyuki Kuriyama ,  Tsutomu Yamada ,  Kiyoshi Yoneda ,  Yasushi Shimogaichi

发明人： Satoshi Ishida ,  Yasuo Nakahara ,  Hiroyuki Kuriyama ,  Tsutomu Yamada ,  Kiyoshi Yoneda ,  Yasushi Shimogaichi

IPC分类号： G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  G09F9/30 ,  H01L21/20 ,  H01L21/268 ,  H01L21/316 ,  H01L21/336 ,  H01L27/12 ,  H01L29/423 ,  H01L29/786 ,  H01L21/00

CPC分类号： H01L21/268 ,  H01L27/12 ,  H01L29/42384 ,  H01L29/66765 ,  H01L29/78636 ,  H01L29/78678 ,  G02F1/13454 ,  H01L21/316

摘要： A thin film transistor (TFT) which may be used as a pixel drive element in an active matrix LCD display includes a pair of side wall spacers adjacent to the opposing side walls of its gate electrode. The side wall spacers provide the gate electrode with a substantially rectangular cross section, such that the gate electrode has a substantially constant thermal conductivity over its area. The TFT has a uniform device characteristic.

摘要翻译： 可以用作有源矩阵LCD显示器中的像素驱动元件的薄膜晶体管（TFT）包括与其栅电极的相对侧壁相邻的一对侧壁间隔物。 侧壁间隔件为栅电极提供了基本上矩形的横截面，使得栅电极在其区域上具有基本恒定的热导率。 TFT具有均匀的器件特性。

公开(公告)号：US6108055A

公开(公告)日：2000-08-22

申请号：US622841

申请日：1996-03-27

申请人： Susumu Oima ,  Norio Tabuchi ,  Kiyoshi Yoneda

发明人： Susumu Oima ,  Norio Tabuchi ,  Kiyoshi Yoneda

IPC分类号： G02F1/136 ,  G02F1/133 ,  G02F1/1362 ,  G02F1/1368 ,  G09F9/30 ,  G09G3/36 ,  H01L29/786 ,  G02F1/1343

CPC分类号： G02F1/13454 ,  G09G2300/0408

摘要： A liquid crystal display includes a display region which is provided with a display pixel driving element, a drain driver which is arranged at least on a part around the display region for supplying a video signal to the display pixel driving element of the display region, a gate driver which is arranged at least on a part around the display region for supplying a scanning signal to the display pixel driving element of the display region, a drain line which is provided to connect the display region with the drain driver, and an additional capacitive electrode which is provided on a region between the display region and the drain driver.

摘要翻译： 液晶显示器包括设置有显示像素驱动元件的显示区域，至少布置在显示区域周围的用于向显示区域的显示像素驱动元件提供视频信号的部分的漏极驱动器， 栅极驱动器，其至少布置在显示区域周围的一部分上，用于向显示区域的显示像素驱动元件提供扫描信号，设置为将显示区域与漏极驱动器连接的漏极线以及附加电容 电极，其设置在显示区域和漏极驱动器之间的区域上。

公开(公告)号：US6008874A

公开(公告)日：1999-12-28

申请号：US138543

申请日：1998-08-24

申请人： Hiroaki Kouno ,  Susumu Oima ,  Yasuo Segawa ,  Norio Tabuchi ,  Shouzou Ohura ,  Hiroki Hamada ,  Kiyoshi Yoneda

发明人： Hiroaki Kouno ,  Susumu Oima ,  Yasuo Segawa ,  Norio Tabuchi ,  Shouzou Ohura ,  Hiroki Hamada ,  Kiyoshi Yoneda

IPC分类号： G02F1/1337 ,  G02F1/136

CPC分类号： G02F1/1337 ,  G02F2001/13373

摘要： An active matrix liquid crystal display improves its contrast by suppressing irregularity of an alignment film caused by video lines thereby reducing reverse regions on a display electrode. The active matrix liquid crystal display has first and second opposite substrates, a video line, an active element and a display electrode which are directly or indirectly formed on the first substrate, and an alignment film which is formed on or above the video line, the active element and the display electrode. The alignment film is so formed that is surface is at an angle of inclination of not more than 10.5.degree. with respect to the display electrode surface between the video line and the display electrode.

摘要翻译： 有源矩阵液晶显示器通过抑制由视频线引起的取向膜的不规则性而改善其对比度，从而减少显示电极上的反向区域。 有源矩阵液晶显示器具有直接或间接地形成在第一基板上的第一和第二相对基板，视频线，有源元件和显示电极以及形成在视频线上或上方的取向膜， 有源元件和显示电极。 取向膜形成为相对于视频线和显示电极之间的显示电极表面的倾斜角不大于10.5°的角度。

公开(公告)号：US5771110A

公开(公告)日：1998-06-23

申请号：US677424

申请日：1996-07-02

申请人： Kiichi Hirano ,  Naoya Sotani ,  Toshifumi Yamaji ,  Yoshihiro Morimoto ,  Kiyoshi Yoneda

发明人： Kiichi Hirano ,  Naoya Sotani ,  Toshifumi Yamaji ,  Yoshihiro Morimoto ,  Kiyoshi Yoneda

IPC分类号： G02F1/1362 ,  H01L21/20 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/49 ,  H01L29/786 ,  H01L27/105

CPC分类号： G02F1/13454 ,  H01L21/2022 ,  H01L27/12 ,  H01L27/1281 ,  H01L27/1285 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78603 ,  H01L29/78621 ,  H01L29/78648 ,  H01L29/78675

摘要： A method of fabricating a thin film transistor by setting the temperature of a heat treatment for crystallizing an active layer which is formed on a substrate at a level not deforming the substrate and activating an impurity layer in a heat treatment method different from that employed for the heat treatment, and a semiconductor device prepared by forming a heat absorption film, a semiconductor film, a gate insulating film, and a gate electrode on a substrate, the heat absorption film being provided within a region substantially corresponding to the semiconductor film.

摘要翻译： 一种制造薄膜晶体管的方法，该方法是通过设定用于使基板上形成的活性层结晶的热处理的温度不会使基板变形，并且以不同于 热处理，以及通过在基板上形成吸热膜，半导体膜，栅极绝缘膜和栅电极而制备的半导体器件，所述吸热膜设置在与半导体膜基本对应的区域内。

公开(公告)号：US5635763A

公开(公告)日：1997-06-03

申请号：US215374

申请日：1994-03-21

申请人： Yasunori Inoue ,  Kazutoshi Tsujimura ,  Shinichi Tanimoto ,  Yasuhiko Yamashita ,  Kiyoshi Yoneda ,  Yoshikazu Ibara

发明人： Yasunori Inoue ,  Kazutoshi Tsujimura ,  Shinichi Tanimoto ,  Yasuhiko Yamashita ,  Kiyoshi Yoneda ,  Yoshikazu Ibara

IPC分类号： H01L23/532 ,  H01L23/48

CPC分类号： H01L23/53223 ,  H01L2924/0002

摘要： A semiconductor device is disclosed, which includes an insulating layer and an interconnection layer having a conductive layer provided over the insulating layer. The interconnection layer is patterned by photolithography. The device further includes a cap-metal layer, which is deposited on the conductive layer and suppresses reflection of light beams at the time of patterning the interconnection layer. The cap-metal layer has any one of the following structures: a double-layered structure having a titanium nitride layer and a titanium layer located between the titanium nitride layer and the conductive layer; a double-layered structure having a titanium nitride layer and an aluminum-titanium alloy layer located between the titanium nitride layer and the conductive layer; and a single-layered structure consisting essentially of an aluminum-titanium alloy. These design ensure accurate interconnection patterning in the photolithography, and provide improved EM and SM immunities of the interconnection.

摘要翻译： 公开了一种半导体器件，其包括绝缘层和在绝缘层上设置有导电层的互连层。 通过光刻将互连层图案化。 该装置还包括帽形金属层，其沉积在导电层上并抑制在构图互连层时光束的反射。 帽金属层具有以下结构之一：具有氮化钛层和位于氮化钛层和导电层之间的钛层的双层结构; 具有氮化钛层和位于氮化钛层和导电层之间的铝 - 钛合金层的双层结构; 以及主要由铝 - 钛合金组成的单层结构。 这些设计确保在光刻中精确的互连图案化，并且提供互连的改善的EM和SM抗扰度。

公开(公告)号：US4906594A

公开(公告)日：1990-03-06

申请号：US195124

申请日：1988-05-16

申请人： Kiyoshi Yoneda ,  Kazunobu Mameno ,  Keita Kawahara ,  Yasunori Inoue

发明人： Kiyoshi Yoneda ,  Kazunobu Mameno ,  Keita Kawahara ,  Yasunori Inoue

IPC分类号： H01L21/263

CPC分类号： H01L21/2633 ,  Y10S438/967

摘要： This invention relates to a surface smoothing method for smoothing the surface of a semiconductor film and insulating film, etc, and a method of forming and SOI substrate by using this surface smoothing method. In this surface smoothing method, the surface of a semiconductor film or an insulating film formed on a substrate is irradiated with an ion beam at an incident angle of about 85.degree. or more, to the normal direction of the surface, while revolving the substrate, whereby the surface is smoothed easily without any contamination thereof or physical deformation of the surface layer. When this surface smoothing method is used in forming an SOI substrate used for a semiconductor three-dimensional circuit element, a single crystal insulating film is formed on a single crystal silicon substrate, and, after annealing, the surface of the insulating film is smoothed by this surface smoothing method and a single crystal silicon film is formed on the smoothed surface thereof, whereby the crystallinity and the surface characteristics of the insulating film are improved and a better quality formed single crystal silicon film is obtained, leading to higher quality of the SOI substrate.

摘要翻译： 本发明涉及用于平滑半导体膜和绝缘膜等的表面的表面平滑化方法，以及通过使用该表面平滑化方法形成SOI衬底的方法。 在该表面平滑化方法中，在旋转基板的同时，以大约85度以上的入射角向表面的法线方向照射形成在基板上的半导体膜或绝缘膜的表面， 由此表面容易平滑，而不会使表面层的污染或物理变形。 当在形成用于半导体三维电路元件的SOI衬底中使用这种表面平滑化方法时，在单晶硅衬底上形成单晶绝缘膜，并且在退火之后，绝缘膜的表面被平滑 在其平滑表面上形成该表面平滑化方法和单晶硅膜，由此提高了绝缘膜的结晶度和表面特性，并且获得了更好的质量形成单晶硅膜，导致了更高质量的SOI 基质。

公开(公告)号：US07166959B2

公开(公告)日：2007-01-23

申请号：US11020815

申请日：2004-12-22

申请人： Koji Suzuki ,  Ryuji Nishikawa ,  Kiyoshi Yoneda

发明人： Koji Suzuki ,  Ryuji Nishikawa ,  Kiyoshi Yoneda

IPC分类号： H01J1/62 ,  H01J63/04 ,  H01J1/64 ,  H01J1/70

CPC分类号： H01L51/5265 ,  H01L27/3213 ,  H01L27/3244 ,  H01L51/5215

摘要： A display device includes a plurality of pixels and realizes a color display using emitted light of at least two wavelengths. Each pixel has a microresonator structure formed between a lower reflective film formed on a side near a substrate and an upper reflective film formed above the lower reflective film with an organic light emitting element layer therebetween. A conductive resonator spacer layer is provided between the lower reflective film and the organic light emitting element layer. Light obtained in the organic light emitting element layer is intensified by the microresonator structure in which the optical length is adjusted by the conductive resonator spacer layer and is emitted to the outside.

摘要翻译： 显示装置包括多个像素，并且使用至少两个波长的发射光实现彩色显示。 每个像素具有形成在形成在基板附近的一侧的下反射膜和形成在下反射膜之上的上反射膜之间的微谐振器结构，其间具有有机发光元件层。 在下反射膜和有机发光元件层之间设置导电谐振器隔离层。 在有机发光元件层中获得的光被通过导电谐振器间隔层调整光学长度的微谐振器结构增强并被发射到外部。

公开(公告)号：US07098474B2

公开(公告)日：2006-08-29

申请号：US10668609

申请日：2003-09-24

申请人： Hiroshi Kanno ,  Kiyoshi Yoneda ,  Kazuki Nishimura ,  Yuji Hamada

发明人： Hiroshi Kanno ,  Kiyoshi Yoneda ,  Kazuki Nishimura ,  Yuji Hamada

IPC分类号： H01L51/00 ,  H05B33/14

CPC分类号： H01L51/5088 ,  H01L21/0212 ,  H01L21/02274 ,  H01L21/3127 ,  H01L51/0052 ,  H01L51/0059 ,  H01L51/0062 ,  H01L51/0078 ,  H01L51/0081 ,  Y10S428/917

摘要： A hole injecting electrode composed of ITO is formed on a glass substrate. On the hole injecting electrode, a hole injecting layer composed of CuPc (copper phthalocyanine), a plasma thin film of CFx formed by plasma CVD, a hole transporting layer of NPB, and a light emitting layer are formed in the order. On the light emitting layer, an electron transporting layer is formed, and an electron injecting electrode is formed thereon.

摘要翻译： 在玻璃基板上形成由ITO构成的空穴注入电极。 在空穴注入电极中，由CuPc（铜酞菁）构成的空穴注入层，通过等离子体CVD形成的CF 3 x等离子体薄膜，NPB的空穴传输层和发光层构成的空穴注入层为 按顺序形成 在发光层上形成电子传输层，并在其上形成电子注入电极。

公开(公告)号：US07019458B2

公开(公告)日：2006-03-28

申请号：US10444067

申请日：2003-05-23

申请人： Kiyoshi Yoneda

发明人： Kiyoshi Yoneda

IPC分类号： H01J1/62

CPC分类号： H01L51/5259 ,  H01L51/5243 ,  H01L51/525 ,  H01L51/529

摘要： In an organic EL panel having a device glass substrate provided with an organic EL element on a surface thereof, a sealing glass substrate attached to the device glass substrate and a desiccant layer formed on a surface of the sealing glass substrate, spacers are disposed between a cathode of the organic EL element and the desiccant layer. A heat-conductive layer can be formed on a surface of the sealing glass substrate including a pocket portion. The heat-conductive layer can be formed by vapor depositing or sputtering a metal layer such as a Cr layer or an Al layer. This inhibits damaging the organic EL element and increases a heat dissipating ability, thereby inhibiting deterioration of a device property caused by temperature rise.

摘要翻译： 在具有在其表面上设置有机EL元件的器件玻璃衬底的有机EL面板中，安装在器件玻璃衬底上的密封玻璃衬底和形成在密封玻璃衬底的表面上的干燥剂层，间隔件设置在 有机EL元件的阴极和干燥剂层。 可以在包括袋部的密封玻璃基板的表面上形成导热层。 导热层可以通过气相沉积或溅射诸如Cr层或Al层的金属层来形成。 这就抑制了有机EL元件的损伤，增加了散热能力，从而抑制了由温度升高引起的器件特性的劣化。

公开(公告)号：US06995048B2

公开(公告)日：2006-02-07

申请号：US10333194

申请日：2002-05-16

申请人： Kiyoshi Yoneda ,  Tsutomu Yamada ,  Shinji Yuda ,  Koji Suzuki

发明人： Kiyoshi Yoneda ,  Tsutomu Yamada ,  Shinji Yuda ,  Koji Suzuki

IPC分类号： H01L21/00 ,  H01L21/84

CPC分类号： H01L27/1288 ,  G02F1/13454 ,  G02F1/136227 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/127 ,  H01L29/41733 ,  H01L29/66757 ,  H01L29/78621

摘要： A first contact hole is formed penetrating a gate insulating film, on which a gate electrode is formed and simultaneously a first contact is formed in the first contact hole. A second contact hole penetrating an interlayer insulating film is formed, and a second contact is formed in the second contact hole. A third contact hole is formed penetrating a planarization film, and an electrode is formed in the third contact hole. By using a plurality of contact holes for electrically connecting the electrode and a semiconductor film, the aspect ratio of each contact hole can be reduced, thereby achieving improvement in yield, high-level integration due to a reduction in difference in area between upper and bottom surfaces of the contact, and other advantageous improvements.

摘要翻译： 穿过栅极绝缘膜的第一接触孔形成栅电极，同时在第一接触孔中形成第一接触。 形成贯穿层间绝缘膜的第二接触孔，在第二接触孔中形成第二接触。 形成穿透平坦化膜的第三接触孔，并且在第三接触孔中形成电极。 通过使用用于电连接电极和半导体膜的多个接触孔，可以减小每个接触孔的纵横比，从而实现产量的提高，由于上下面积之间的差异减小而导致的高电平整合 接触面，以及其它有利的改进。