公开(公告)号：US20090058411A1

公开(公告)日：2009-03-05

申请号：US12193851

申请日：2008-08-19

申请人： Makoto Miyoshi ,  Mitsuhiro Tanaka

发明人： Makoto Miyoshi ,  Mitsuhiro Tanaka

IPC分类号： G01R33/07

CPC分类号： G01R33/07

摘要： An aspect of the present invention provides a magnetic sensor which is operated better at a high temperature range not lower than 300° C. compared with a conventional magnetic sensor. A operating layer having a heterojunction interface is formed by laminating a first layer made of GaN whose electron concentration is not more than 1×1016/cm3 at room temperature and a second layer made of AlxGa1-xN (0

摘要翻译： 本发明的一个方面提供一种磁传感器，其与传统的磁传感器相比在不低于300℃的高温范围内更好地运行。 具有异质结界面的工作层通过在室温下层叠电子浓度不大于1×1016 / cm 3的GaN的第一层和由Al x Ga 1-x N（0

公开(公告)号：US20080232758A1

公开(公告)日：2008-09-25

申请号：US12068744

申请日：2008-02-11

申请人： Makoto Miyoshi ,  Kazuya Sasaki

发明人： Makoto Miyoshi ,  Kazuya Sasaki

IPC分类号： G02B6/00

CPC分类号： G02B6/4201 ,  G02B6/4261

摘要： An optical module which can be inserted into and removed from a cage, the optical module includes a lock pin inserted into a lock hole provided in the cage and engaging the cage and the optical module with each other in a state where the optical module is inserted into the cage; a tongue having an axial part and configured to be rotated with respect to the axial part in a direction where the insertion of the lock pin into the lock hole is released; and a bail configured to be rotated with respect to a rotational axel so that the tongue is rotated. The engagement of the cage and the optical module formed by insertion of the lock pin into the lock hole is released by rotating the bail 90 degrees.

摘要翻译： 光学模块可以插入到保持架中并从壳体中移除，该光学模块包括插入到保持架中的锁定孔中的锁定销，并且在光学模块被插入的状态下将保持架和光学模块彼此接合 进笼子里 具有轴向部分并且构造成在锁定销插入锁定孔的方向上相对于轴向部分旋转的舌头; 以及配置为相对于旋转轴旋转以使舌头旋转的吊钩。 将保持架和通过将锁定销插入锁定孔而形成的光学模块的接合通过将吊环旋转90度来释放。

公开(公告)号：US20080187271A1

公开(公告)日：2008-08-07

申请号：US12078060

申请日：2008-03-26

申请人： Makoto Miyoshi ,  Kazuya Sasaki ,  Akihiko Hayashi ,  Shinichi Aoki ,  Yasunori Nagakubo

发明人： Makoto Miyoshi ,  Kazuya Sasaki ,  Akihiko Hayashi ,  Shinichi Aoki ,  Yasunori Nagakubo

IPC分类号： G02B6/36

CPC分类号： G02B6/4292 ,  G02B6/4201 ,  G02B6/4261

摘要： A module is configured to be attached to a cage. A handle is rotatable about a rotation shaft between an accommodated position where the module is mounted to the cage and a withdrawal position where the module can be withdrawn from the cage. A resiliently-bendable tongue piece performs engagement and disengagement between the module and the cage. A notch portion is provided to the tongue piece. A press portion is provided to the handle on a circumference having a center located on the rotation shaft of the handle, the press portion configured to contact with the notch portion when the handle is at the accommodated position. A cam rotatable with the handle so as to resiliently bend the tongue piece.

摘要翻译： 模块被配置为附接到笼。 手柄可绕旋转轴转动，该旋转轴在模块安装到保持架的容纳位置和模块可从保持架中取出的取出位置之间旋转。 弹性弯曲的舌片执行模块和保持架之间的接合和分离。 切口部分设置在舌片上。 在具有位于手柄的旋转轴上的中心的圆周上的手柄上设置有按压部，当手柄处于收纳位置时，按压部构造成与切口部接触。 凸轮可与手柄一起旋转，以弹性地弯曲舌片。

公开(公告)号：US20070228519A1

公开(公告)日：2007-10-04

申请号：US11692290

申请日：2007-03-28

申请人： Makoto Miyoshi ,  Yoshitaka Kuraoka

发明人： Makoto Miyoshi ,  Yoshitaka Kuraoka

IPC分类号： H01L29/00

CPC分类号： H01L29/872 ,  H01L29/2003 ,  H01L29/66462

摘要： A semiconductor device made of a group-III nitride semiconductor having excellent properties is provided. The semiconductor device has a horizontal diode structure of Schottky type or P—N junction type, or combined type thereof having a main conduction pathway in the horizontal direction in a conductive layer with unit anode portions and unit cathode electrodes being integrated adjacently to each other in the horizontal direction. The conductive layer is preferably formed by depositing a group-III nitride layer and generating a two-dimensional electron gas layer on the interface. Forming the conductive layer of the group-III nitride having high breakdown field allows the breakdown voltage to be kept high while the gap between electrodes is narrow, which achieves a semiconductor device having high output current per chip area. Further, an electrode pad layer provided on an insulation protecting layer relieves electric field concentration at a junction of each unit anode portion and each unit cathode electrode, which achieves higher breakdown voltage.

摘要翻译： 提供由具有优异特性的III-III族氮化物半导体制成的半导体器件。 半导体器件具有肖特基型或PN结型的水平二极管结构，或者其组合型在导电层中具有在水平方向上的主导电通路，其中单元阳极部分和单元阴极电极在水平方向彼此相邻地相互整合 方向。 导电层优选通过沉积III族氮化物层并在界面上产生二维电子气层形成。 形成具有高击穿场的III族氮化物的导电层允许击穿电压保持较高，同时电极之间的间隙窄，这实现了每芯片面积具有高输出电流的半导体器件。 此外，设置在绝缘保护层上的电极焊盘层可以减轻每个单元阳极部分和每个单位阴极电极的接合处的电场浓度，从而实现更高的击穿电压。

公开(公告)号：US07261475B2

公开(公告)日：2007-08-28

申请号：US11017845

申请日：2004-12-22

申请人： Kazuya Sasaki ,  Masato Hino ,  Shinya Suzuki ,  Makoto Miyoshi

发明人： Kazuya Sasaki ,  Masato Hino ,  Shinya Suzuki ,  Makoto Miyoshi

IPC分类号： G02B6/36

CPC分类号： G02B6/4292 ,  G02B6/4246 ,  H01R13/665 ,  H01R2201/04

摘要： A case containing an optical interface section including a connector-fitting unit in its front portion, a printed board in its central portion, and an electrical interface section in its rear portion is accommodated in a housing. When a data link module is inserted in a cage, a housing tongue and a through hole both formed in a bottom plate of the housing are overlapped with a cage tongue and a lock pin both provided in and on a bottom plate of the cage, into and from which the data link module is inserted and removed, such that the lock pin is engaged in and locked by the lock hole. When removing the data link module from the cage, by angularly turning a bail pivotally supported by the connector-fitting unit, the cage tongue is pushed down following to the housing tongue with the camming operation of a plate cam, thus causing the lock hole to be disengaged from the lock pin.

摘要翻译： 包括其前部中的连接器装配单元，其中央部分中的印刷板以及其后部中的电接口部的光学接口部的壳体容纳在壳体中。 当将数据链接模块插入保持架中时，两个形成在壳体的底板中的壳体舌片和通孔与保持架的舌状物和设置在保持架的底板上的锁定销重叠， 并且从中插入和移除数据链接模块，使得锁定销被锁定孔锁定并锁定。 当从保持架中取出数据链接模块时，通过角度地转动由连接器装配单元枢转地支承的吊环，通过板形凸轮的凸轮操作使笼舌沿着壳体舌片向下推动，从而使锁定孔 从锁定销脱离。

公开(公告)号：US5636048A

公开(公告)日：1997-06-03

申请号：US406200

申请日：1995-03-16

申请人： Kazuhisa Kogure ,  Hirokazu Osada ,  Yasuhiro Tanaka ,  Hiroo Kitasagami ,  Makoto Miyoshi ,  Kakuji Inoue ,  Takayoshi Ikegami ,  Kenichi Kobayashi ,  Shinichiro Sano ,  Setsuo Misaizu ,  Masahiko Yamashita ,  Tatsuya Nishimura

发明人： Kazuhisa Kogure ,  Hirokazu Osada ,  Yasuhiro Tanaka ,  Hiroo Kitasagami ,  Makoto Miyoshi ,  Kakuji Inoue ,  Takayoshi Ikegami ,  Kenichi Kobayashi ,  Shinichiro Sano ,  Setsuo Misaizu ,  Masahiko Yamashita ,  Tatsuya Nishimura

IPC分类号： H03G3/20 ,  H03F3/08 ,  H03F3/34 ,  H03F3/45 ,  H03G3/30 ,  H04B3/04 ,  H04B10/07 ,  H04B10/2507 ,  H04B10/293 ,  H04B10/294 ,  H04B10/299 ,  H04B10/564 ,  H04B10/572 ,  H04L25/03 ,  H04B10/06

CPC分类号： H04B10/6933 ,  H03F3/08 ,  H03G3/3084 ,  H04B10/6931 ,  H04L25/063

摘要： In an equalizing amplifier that equalizes an electric signal obtained from a light signal received via an optical transmission path, an AGC circuit generates first and second signals from the electric signal by referring to a threshold voltage. The first and second signals are complementary signals. An offset compensation circuit generates a first difference signal based on a difference between the first and second signals, compares the first difference signal with a first reference signal, and outputs, as the threshold voltage, a resultant error signal to the AGC circuit. The threshold voltage is varied so that it is located in the center of an amplitude of the electric signal whereby an offset of the AGC circuit can be compensated for.

摘要翻译： 在均衡放大器中，均衡从经由光传输路径接收的光信号获得的电信号，AGC电路通过参考阈值电压从电信号产生第一和第二信号。 第一和第二信号是互补信号。 偏移补偿电路基于第一和第二信号之间的差产生第一差分信号，将第一差分信号与第一参考信号进行比较，并将所得到的误差信号作为阈值电压输出到AGC电路。 阈值电压变化，使其位于电信号幅度的中心，从而可以补偿AGC电路的偏移。

公开(公告)号：US4655072A

公开(公告)日：1987-04-07

申请号：US798087

申请日：1985-11-14

申请人： Makoto Miyoshi

发明人： Makoto Miyoshi

IPC分类号： B21D1/14 ,  B21D1/12

CPC分类号： B21D1/145 ,  Y10S72/705 ,  Y10T24/3439 ,  Y10T403/7105

摘要： A clamp includes an elastic member which comprises a generally U-shaped tube portion, two recessed portions which separately extend from the tube portion and are curved inwardly, and two gripping portions which extend from the respective recessed portions, two opposing clamp teeth each of which is mounted on the inner face of a respective gripping portion, and a fastener which urges the two gripping portions toward each other for tightening and contracting the tube portion and at the same time driving the two clamp teeth toward each other. An elongated pipe-like member runs through the tube portion of the elastic member. A portion of a damaged automobile is positioned between the two opposing clamp teeth, and then the gripping portions are tightened by the fastener so that as the elastic member of the clamp is secured on the elongated member a portion of a vehicle is gripped tightly between the clamp teeth. The clamp is particularly useful on an auto lock clamp apparatus of the type used to secure and horizontally support an automobile while body repairs are being made.

摘要翻译： 夹具包括弹性构件，其包括大致U形的管部分，从管部分分开延伸并向内弯曲的两个凹部，以及从各凹部延伸的两个夹持部， 安装在相应夹持部分的内表面上，以及紧固件，其将两个抓握部分朝向彼此推压以紧固和收缩管部分，同时将两个夹紧齿彼此驱动。 细长的管状构件穿过弹性构件的管部分。 损坏的汽车的一部分位于两个相对的夹紧齿之间，然后夹紧部分被紧固件紧固，使得当夹具的弹性构件固定在细长构件上时，车辆的一部分紧紧地夹紧在 钳牙。 夹具特别适用于在进行身体修理时用于固定和水平支撑汽车的类型的自动锁紧装置。

公开(公告)号：US08415690B2

公开(公告)日：2013-04-09

申请号：US13457931

申请日：2012-04-27

申请人： Makoto Miyoshi ,  Shigeaki Sumiya ,  Mikiya Ichimura ,  Mitsuhiro Tanaka

发明人： Makoto Miyoshi ,  Shigeaki Sumiya ,  Mikiya Ichimura ,  Mitsuhiro Tanaka

IPC分类号： H01L33/00 ,  H01L21/00

CPC分类号： H01L21/02381 ,  C23C16/0272 ,  C23C16/029 ,  C23C16/303 ,  C30B25/02 ,  C30B29/403 ,  C30B29/68 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02494 ,  H01L21/02505 ,  H01L21/02507 ,  H01L21/0251 ,  H01L21/0254 ,  H01L29/1075 ,  H01L29/2003 ,  H01L29/7786 ,  H01L29/872

摘要： Provided is an epitaxial substrate using a silicon substrate as a base substrate. An epitaxial substrate, in which a group of group-III nitride layers are formed on a (111) single crystal Si substrate such that a (0001) crystal plane of the group of group-III nitride layers is substantially in parallel with a surface of the substrate, includes: a first group-III nitride layer made of AlN with many defects configured of at least one kind from a columnar or granular crystal or domain; a second group-III nitride layer whose interface with the first group-III nitride layer is shaped into a three-dimensional concave-convex surface; and a third group-III nitride layer epitaxially formed on the second group-III nitride layer as a graded composition layer in which the proportion of existence of Al is smaller in a portion closer to a fourth group-III nitride.

摘要翻译： 提供了使用硅衬底作为基底的外延衬底。 一种外延衬底，其中在（111）单晶Si衬底上形成一组III族氮化物层，使得III族氮化物层组的（0001）晶面基本上平行于 所述基板包括：由AlN制成的第一III族氮化物层，其具有由柱状或粒状晶体或畴中至少一种构成的许多缺陷; 与第一III族氮化物层的界面成形为三维凹凸面的第二III族氮化物层; 以及外延形成在第二III族氮化物层上的第三III族氮化物层，作为梯度组成层，其中Al的存在比例在更接近第四族III族氮化物的部分中较小。

公开(公告)号：US20120126293A1

公开(公告)日：2012-05-24

申请号：US13353759

申请日：2012-01-19

申请人： Shigeaki Sumiya ,  Makoto Miyoshi ,  Tomohiko Sugiyama ,  Mikiya Ichimura ,  Yoshitaka Kuraoka ,  Mitsuhiro Tanaka

发明人： Shigeaki Sumiya ,  Makoto Miyoshi ,  Tomohiko Sugiyama ,  Mikiya Ichimura ,  Yoshitaka Kuraoka ,  Mitsuhiro Tanaka

IPC分类号： H01L29/205 ,  H01L21/20

CPC分类号： H01L21/0254 ,  C30B25/18 ,  C30B25/183 ,  C30B29/403 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02494 ,  H01L21/02502 ,  H01L21/0262 ,  H01L29/2003 ,  H01L29/7786 ,  H01L29/872

摘要： An epitaxial substrate, in which a group of group-III nitride layers is formed on a single-crystal silicon substrate so that a crystal plane is approximately parallel to a substrate surface, comprises: a first group-III nitride layer formed of AlN on the base substrate; a second group-III nitride layer formed of InxxAlyyGazzN (xx+yy+zz=1, 0≦xx≦1, 0

摘要翻译： 在单晶硅衬底上形成一组III族氮化物层，使得晶面大致平行于衬底表面的外延衬底包括：由第一III族氮化物层形成的第一III族氮化物层 基底; 在第一III族氮化物层上由InxxAlyyGazzN（xx + yy + zz = 1,0,0

公开(公告)号：US08044485B2

公开(公告)日：2011-10-25

申请号：US11692290

申请日：2007-03-28

申请人： Makoto Miyoshi ,  Yoshitaka Kuraoka

发明人： Makoto Miyoshi ,  Yoshitaka Kuraoka

IPC分类号： H01L29/47

CPC分类号： H01L29/872 ,  H01L29/2003 ,  H01L29/66462

摘要： A semiconductor device made of a group-III nitride semiconductor having excellent properties is provided. The semiconductor device has a horizontal diode structure of Schottky type or P-N junction type, or combined type thereof having a main conduction pathway in the horizontal direction in a conductive layer with unit anode portions and unit cathode electrodes being integrated adjacently to each other in the horizontal direction. The conductive layer is preferably formed by depositing a group-III nitride layer and generating a two-dimensional electron gas layer on the interface. Forming the conductive layer of the group-III nitride having high breakdown field allows the breakdown voltage to be kept high while the gap between electrodes is narrow, which achieves a semiconductor device having high output current per chip area. Further, an electrode pad layer provided on an insulation protecting layer relieves electric field concentration at a junction of each unit anode portion and each unit cathode electrode, which achieves higher breakdown voltage.

摘要翻译： 提供由具有优异特性的III-III族氮化物半导体制成的半导体器件。 半导体器件具有肖特基型或PN结型的水平二极管结构，或者其组合型在导电层中具有在水平方向上的主导电通路，其中单元阳极部分和单元阴极电极在水平方向彼此相邻地相互整合 方向。 导电层优选通过沉积III族氮化物层并在界面上产生二维电子气层形成。 形成具有高击穿场的III族氮化物的导电层允许击穿电压保持较高，同时电极之间的间隙窄，这实现了每芯片面积具有高输出电流的半导体器件。 此外，设置在绝缘保护层上的电极焊盘层可以减轻每个单元阳极部分和每个单位阴极电极的接合处的电场浓度，从而实现更高的击穿电压。