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    EPITAXIAL SUBSTRATE AND METHOD FOR MANUFACTURING EPITAXIAL SUBSTRATE
    3.
    发明申请
    EPITAXIAL SUBSTRATE AND METHOD FOR MANUFACTURING EPITAXIAL SUBSTRATE 有权
    外延基板和制造外延基板的方法

    公开(公告)号：US20120161152A1

    公开(公告)日：2012-06-28

    申请号：US13414104

    申请日：2012-03-07

    申请人： Makoto MIYOSHI ,  Shigeaki Sumiya ,  Mikiya Ichimura ,  Sota Maehara ,  Mitsuhiro Tanaka

    发明人： Makoto MIYOSHI ,  Shigeaki Sumiya ,  Mikiya Ichimura ,  Sota Maehara ,  Mitsuhiro Tanaka

    IPC分类号： H01L29/205 ,  H01L21/20 ,  H01L29/04

    CPC分类号： H01L29/2003 ,  C30B25/186 ,  C30B29/403 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L29/045 ,  H01L29/205 ,  H01L29/7787

    摘要： Provided is a crack-free epitaxial substrate having a small amount of warping, in which a silicon substrate is used as a base substrate. The epitaxial substrate includes a (111) single crystal Si substrate, a buffer layer, and a crystal layer. The buffer layer is formed of a first lamination unit and a second lamination unit being alternately laminated. The first lamination unit includes a composition modulation layer and a first intermediate layer. The composition modulation layer is formed of a first unit layer and a second unit layer having different compositions being alternately and repeatedly laminated so that a compressive strain exists therein. The first intermediate layer enhances the compressive strain existing in the composition modulation layer. The second lamination unit is a second intermediate layer that is substantially strain-free.

    摘要翻译： 提供了具有少量翘曲的无裂纹外延基板，其中使用硅基板作为基底。 外延衬底包括（111）单晶Si衬底，缓冲层和晶体层。 缓冲层由第一层叠单元和第二层压单元交替层叠形成。 第一层压单元包括组成调制层和第一中间层。 组成调制层由具有不同组成的第一单位层和第二单位层形成，以便在其中存在压缩应变。 第一中间层增强了存在于组成调制层中的压缩应变。 第二层压单元是基本上无应变的第二中间层。

    EPITAXIAL SUBSTRATE AND METHOD FOR MANUFACTURING EPITAXIAL SUBSTRATE
    5.
    发明申请
    EPITAXIAL SUBSTRATE AND METHOD FOR MANUFACTURING EPITAXIAL SUBSTRATE 有权
    外延基板和制造外延基板的方法

    公开(公告)号：US20130032781A1

    公开(公告)日：2013-02-07

    申请号：US13570665

    申请日：2012-08-09

    申请人： Makoto MIYOSHI ,  Shigeaki Sumiya ,  Mikiya Ichimura ,  Tomohiko Sugiyama ,  Mitsuhiro Tanaka

    发明人： Makoto MIYOSHI ,  Shigeaki Sumiya ,  Mikiya Ichimura ,  Tomohiko Sugiyama ,  Mitsuhiro Tanaka

    IPC分类号： H01L29/15 ,  H01L21/20

    CPC分类号： C30B29/403 ,  C30B25/18 ,  C30B25/183 ,  C30B29/68 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L29/155 ,  H01L29/7786 ,  H01L29/872 ,  H01L33/007 ,  H01L33/04 ,  H01L33/12

    摘要： Provided is a crack-free epitaxial substrate with reduced warping, in which a silicon substrate is used as a base substrate. The epitaxial substrate includes a (111) single crystal Si substrate, a superlattice layer group in which a plurality of superlattice layers are laminated, and a crystal layer. The superlattice layer is formed of a first unit layer and a second unit layer made of group-III nitrides having different compositions being alternately and repeatedly laminated. The crystal layer is made of a group-III nitride and formed above the base substrate so as to be positioned at an upper side of the superlattice layer group relative to the base substrate. The superlattice layer group has a compressive strain contained therein. In the superlattice layer group, the more distant the superlattice layer is from the base substrate, the greater the compressive strain becomes.

    摘要翻译： 提供了一种具有减小翘曲的无裂纹外延衬底，其中硅衬底用作基底衬底。 外延衬底包括（111）单晶Si衬底，层叠有多个超晶格层的超晶格层组和晶体层。 超晶格层由第一单位层和由具有不同组成的III-III族氮化物制成的第二单元层交替地和重复地层叠形成。 晶体层由III族氮化物制成，并且形成在基底基板上方，以便相对于基底衬底位于超晶格层组的上侧。 超晶格层组中含有压应变。 在超晶格层组中，超晶格层离基底越远，压应变越大。

    SEMICONDUCTOR ELEMENT, HEMT ELEMENT, AND METHOD OF MANUFACTURING SEMICONDUCTOR ELEMENT
    6.
    发明申请
    SEMICONDUCTOR ELEMENT, HEMT ELEMENT, AND METHOD OF MANUFACTURING SEMICONDUCTOR ELEMENT 审中-公开
    半导体元件，元件元件及制造半导体元件的方法

    公开(公告)号：US20120168771A1

    公开(公告)日：2012-07-05

    申请号：US13415066

    申请日：2012-03-08

    申请人： Makoto Miyoshi ,  Shigeaki Sumiya ,  Mikiya Ichimura ,  Tomohiko Sugiyama ,  Mitsuhiro Tanaka

    发明人： Makoto Miyoshi ,  Shigeaki Sumiya ,  Mikiya Ichimura ,  Tomohiko Sugiyama ,  Mitsuhiro Tanaka

    IPC分类号： H01L29/778 ,  H01L21/335 ,  H01L29/205

    CPC分类号： H01L29/7786 ,  H01L21/28581 ,  H01L29/2003 ,  H01L29/475 ,  H01L29/66462

    摘要： A semiconductor device is provided such that a reverse leak current is suppressed, and a Schottky junction is reinforced. The semiconductor device includes an epitaxial substrate formed by laminating a group of group-III nitride layers on a base substrate in such a manner that (0001) surfaces of said group-III nitride layers are substantially parallel to a substrate surface, and a Schottky electrode, in which the epitaxial substrate includes a channel layer formed of a first group-III nitride having a composition of Inx1Aly1Gaz1N, a barrier layer formed of a second group-III nitride having a composition of Inx2Aly2N, and a contact layer formed of a third group-III nitride having insularity and adjacent to the barrier layer, and the Schottky electrode is connected to the contact layer. In addition, a heat treatment is performed under a nitrogen atmosphere after the gate electrode has been formed.

    摘要翻译： 提供半导体器件，使得抑制反向泄漏电流，并且增强肖特基结。 半导体器件包括：外延衬底，其通过在基底衬底上层叠一组III族氮化物层而形成，使得所述III族氮化物层的（0001）表面基本上平行于衬底表面，并且肖特基电极 ，其中外延衬底包括由具有In x Al 1 Al 1 Ga z N 1的组成的第一III族氮化物形成的沟道层，由具有In x 2 Al 2 N的组成的第二III族氮化物形成的阻挡层和由第三组形成的接触层 -III氮化物与隔离层相邻，并且肖特基电极连接到接触层。 此外，在形成栅电极之后，在氮气氛下进行热处理。