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公开(公告)号：US09419056B2
公开(公告)日：2016-08-16
申请号：US14794162
申请日：2015-07-08
Applicant: Micron Technology, Inc.
Inventor： Fabio Pellizzer , Ferdinando Bedeschi
CPC classification number: H01L27/2463 , H01L27/2436 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/1286 , H01L45/141 , H01L45/144 , H01L45/16 , H01L45/1641 , H01L45/165 , H01L45/1675 , H01L45/1683
Abstract: Resistive memory cell structures and methods are described herein. One or more memory cell structures comprise a first resistive memory cell comprising a first resistance variable material and a second resistive memory cell comprising a second resistance variable material that is different than the first resistance variable material.
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公开(公告)号：US20160049194A1
公开(公告)日：2016-02-18
申请号：US14458813
申请日：2014-08-13
Applicant: Micron Technology, Inc.
Inventor： Ferdinando Bedeschi
IPC: G11C13/00
CPC classification number: G11C13/004 , G11C11/00 , G11C11/1677 , G11C13/0064 , G11C2013/0066
Abstract: The present disclosure includes apparatuses and methods for sensing a resistance variable memory cell. A number of embodiments include circuitry to provide a programming signal to a memory cell in the array, the programming signal associated with programming the memory cell to a particular data state; and determine, via an integration component, if a data state of the memory cell changes to a different data state responsive to the programming signal being provided.
Abstract translation: 本公开包括用于感测电阻变量存储单元的装置和方法。 许多实施例包括向阵列中的存储器单元提供编程信号的电路，与将存储器单元编程为特定数据状态相关联的编程信号; 并且通过积分分量确定响应于所提供的编程信号，存储器单元的数据状态是否变为不同的数据状态。
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公开(公告)号：US20160019958A1
公开(公告)日：2016-01-21
申请号：US14868896
申请日：2015-09-29
Applicant: Micron Technology, Inc.
Inventor： Ferdinando Bedeschi
IPC: G11C13/00
CPC classification number: G11C13/0064 , G11C13/0004 , G11C13/0069 , G11C2013/0078 , G11C2013/0092
Abstract: Subject matter disclosed herein relates to a memory device, and more particularly to write performance of a phase change memory.
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公开(公告)号：US20150302924A1
公开(公告)日：2015-10-22
申请号：US14753938
申请日：2015-06-29
Applicant: Micron Technology, Inc.
Inventor： Ferdinando Bedeschi , Roberto Gastaldi
CPC classification number: G11C13/0033 , G06F11/1068 , G11C11/5678 , G11C13/0004 , G11C13/0038 , G11C13/004 , G11C13/0061 , G11C13/0069 , G11C14/009 , G11C16/3418 , G11C29/52
Abstract: Methods and systems to refresh a nonvolatile memory device, such as a phase change memory. In an embodiment, as a function of system state, a memory device performs either a first refresh of memory cells using a margined read reference level or a second refresh of error-corrected memory cells using a non-margined read reference level.
Abstract translation: 刷新非易失性存储器件（例如相变存储器）的方法和系统。 在一个实施例中，作为系统状态的函数，存储器设备使用边缘读取参考电平或使用非余量读取参考电平对错误校正的存储器单元的第二刷新来执行存储器单元的第一刷新。
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公开(公告)号：US20150287458A1
公开(公告)日：2015-10-08
申请号：US14746483
申请日：2015-06-22
Applicant: Micron Technology, Inc.
Inventor： Fabio Pellizzer , Roberto Bez , Ferdinando Bedeschi , Roberto Gastaldi
IPC: G11C13/00
CPC classification number: G11C13/0004 , G11C11/56 , G11C11/5678 , G11C13/004 , G11C13/0069 , G11C2013/0054 , G11C2213/79 , H01L27/2427 , H01L27/2463 , H01L45/04 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/143 , H01L45/144
Abstract: A phase change memory device with memory cells (2) formed by a phase change memory element (3) and a selection switch (4). A reference cell (2a) formed by an own phase change memory element (3) and an own selection switch (4) is associated to a group (7) of memory cells to be read. An electrical quantity of the group of memory cells is compared with an analogous electrical quantity of the reference cell, thereby compensating any drift in the properties of the memory cells.
Abstract translation: 一种具有由相变存储元件（3）和选择开关（4）形成的存储单元（2）的相变存储器件。 由自己的相变存储元件（3）和自己的选择开关（4）形成的参考单元（2a）与待读取的存储单元组（7）相关联。 将该组存储器单元的电量与参考单元的类似电量进行比较，由此补偿存储单元的特性中的任何漂移。
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Patent Agency Ranking
公开(公告)号：US09064565B2
公开(公告)日：2015-06-23
申请号：US14047605
申请日：2013-10-07
Applicant: Micron Technology, Inc.
Inventor： Fabio Pellizzer , Roberto Bez , Ferdinando Bedeschi , Roberto Gastaldi
CPC classification number: G11C13/0004 , G11C11/56 , G11C11/5678 , G11C13/004 , G11C13/0069 , G11C2013/0054 , G11C2213/79 , H01L27/2427 , H01L27/2463 , H01L45/04 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/143 , H01L45/144
Abstract: A phase change memory device with memory cells is formed from a phase change memory element and a selection switch. A reference cell is formed from a similar phase change memory element and an associated selection switch and is associated to a group of memory cells to be read. An electrical quantity of the group of memory cells is compared with an analogous electrical quantity of the reference cell, thereby compensating for drift in the properties of the memory cells.
Abstract translation: 具有存储单元的相变存储器件由相变存储器元件和选择开关形成。 参考单元由相似的相变存储器元件和相关联的选择开关形成，并且与要读取的一组存储器单元相关联。 将该组存储器单元的电量与参考单元的类似电量进行比较，由此补偿存储单元的特性的漂移。
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公开(公告)号：US20150098269A1
公开(公告)日：2015-04-09
申请号：US14571137
申请日：2014-12-15
Applicant: Micron Technology, Inc.
Inventor： Ferdinando Bedeschi , Roberto Gastaldi
IPC: G11C13/00
CPC classification number: G11C13/004 , G11C11/5678 , G11C13/0004 , G11C13/0035 , G11C13/0064 , G11C13/0069 , G11C2013/0054 , G11C2211/5634 , G11C2213/54
Abstract: Subject matter disclosed herein relates to a memory device, and more particularly to write performance of a phase change memory.
Abstract translation: 本文公开的主题涉及存储器件，更具体地涉及写入相变存储器的性能。
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公开(公告)号：US20140325314A1
公开(公告)日：2014-10-30
申请号：US14269869
申请日：2014-05-05
Applicant: MICRON TECHNOLOGY, INC.
Inventor： Ferdinando Bedeschi
IPC: G06F11/10
CPC classification number: G06F11/1008 , G06F11/1048 , G11C13/0004 , G11C13/0033 , G11C13/0038 , G11C13/004 , G11C29/021 , G11C29/026 , G11C29/028 , G11C29/42 , G11C29/52
Abstract: Subject matter disclosed herein relates to a memory device, and more particularly to read performance of phase change memory. During a reading process, a bias condition can be applied to a memory cell to determine the memory cell's state. The determined state of the memory cell can depend on a threshold voltage of the memory cell. The threshold voltage of the memory cell may shift over time. The shift in threshold voltage may result in read errors. The applied bias condition may be modified based on the resulting read errors.
Abstract translation: 本文公开的主题涉及存储器件，更具体地涉及读出相变存储器的性能。 在读取过程中，可以将偏置条件应用于存储器单元以确定存储器单元的状态。 存储器单元的确定状态可以取决于存储器单元的阈值电压。 存储单元的阈值电压可能会随时间而变化。 阈值电压的偏移可能导致读取错误。 可以基于所得到的读取错误来修改施加的偏置条件。
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公开(公告)号：US20140321191A1
公开(公告)日：2014-10-30
申请号：US13869512
申请日：2013-04-24
Applicant: MICRON TECHNOLOGY, INC.
Inventor： Ferdinando Bedeschi , Roberto Gastaldi
IPC: G11C13/00
CPC classification number: G11C13/004 , G11C11/1673 , G11C11/1675 , G11C13/0002 , G11C13/0033 , G11C13/0069 , G11C2013/0047 , G11C2013/0057 , G11C2013/0076
Abstract: The present disclosure includes apparatuses and methods for sensing a resistance variable memory cell. A number of embodiments include programming a memory cell to an initial data state and determining a data state of the memory cell by applying a programming signal to the memory cell, the programming signal associated with programming memory cells to a particular data state, and determining whether the data state of the memory cell changes from the initial data state to the particular data state during application of the programming signal.
Abstract translation: 本公开包括用于感测电阻变量存储单元的装置和方法。 多个实施例包括将存储器单元编程为初始数据状态，并通过将编程信号施加到存储器单元，将编程信号与编程存储器单元相关联到特定数据状态来确定存储器单元的数据状态，以及确定是否 在应用编程信号期间，存储单元的数据状态从初始数据状态变为特定数据状态。
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公开(公告)号：US20140269044A1
公开(公告)日：2014-09-18
申请号：US13799312
申请日：2013-03-13
Applicant: MICRON TECHNOLOGY, INC.
Inventor： Ferdinando Bedeschi
IPC: G11C13/00
CPC classification number: G11C13/0069 , G11C7/1006 , G11C7/1012 , G11C13/0004
Abstract: Subject matter disclosed herein relates to memory operations regarding changing an order of program bits to be programmed into a memory array.
Abstract translation: 本文公开的主题涉及将要编程到存储器阵列中的程序位的顺序改变的存储器操作。
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