公开(公告)号：US20240323062A1

公开(公告)日：2024-09-26

申请号：US18734721

申请日：2024-06-05

Applicant: Micron Technology, Inc.

Inventor： Kang-Yong Kim ,  Hyun Yoo Lee ,  Timothy M. Hollis ,  Dong Soon Lim

IPC: H04L25/03 ,  H04L25/49

CPC classification number: H04L25/03057 ,  H04L25/4917

Abstract: Described apparatuses and methods are directed to equalization with pulse-amplitude modulation (PAM) signaling. As bus frequencies have increased, the time for correctly transitioning between voltage levels has decreased, which can lead to errors. Symbol decoding reliability can be improved with equalization, like with decision-feedback equalization (DFE). DFE, however, can be expensive for chip area and power usage. Therefore, instead of applying DFE to all voltage level determination paths in a receiver, DFE can be applied to a subset of such determination paths. With PAM4 signaling, for example, a DFE circuit can be coupled between an output and an input of a middle slicer. In some cases, symbol detection reliability can be maintained even with fewer DFE circuits by compressing a middle eye of the PAM4 signal. The other two eyes thus have additional headroom for expansion. Encoding schemes, impedance terminations, or reference voltage levels can be tailored accordingly.

公开(公告)号：US20240302998A1

公开(公告)日：2024-09-12

申请号：US18608591

申请日：2024-03-18

Applicant: Micron Technology, Inc.

Inventor： Keun Soo Song ,  Hyunyoo Lee ,  Kang-Yong Kim

IPC: G06F3/06

CPC classification number: G06F3/0659 ,  G06F3/0602 ,  G06F3/0673

Abstract: Methods, systems, and devices for managing address access information are described. A device may receive a command for an address of a memory array. Based on or in response to the command, the device may read a first set of tag bits from the memory array. The first set of tag bits may indicate access information for a set of addresses that includes the address. The device may determine a second set of tag bits based on the command and the address. The second set of tag bits may indicate updated access information for the address. The device may generate a codeword based on the first set of tag bits and the second set of tag bits and may store the codeword in the memory array.

公开(公告)号：US12086026B2

公开(公告)日：2024-09-10

申请号：US17654354

申请日：2022-03-10

Applicant: Micron Technology, Inc.

Inventor： Keun Soo Song ,  Kang-Yong Kim ,  Hyun Yoo Lee

IPC: G06F11/10 ,  G06F3/06

CPC classification number: G06F11/1044 ,  G06F3/0619 ,  G06F3/0629 ,  G06F3/0673

Abstract: Described apparatuses and methods provide configurable error correction code (ECC) circuitry and schemes that can utilize a shared ECC engine between multiple memory banks of a memory, including a low-power double data rate (LPDDR) memory. A memory device may include one or more dies with multiple memory banks. The configurable ECC circuitry can use an ECC engine that services a memory bank by producing ECC values based on data stored in the memory bank when data-masking functionality is enabled. When data-masking functionality is disabled, the configurable ECC circuitry can use the shared ECC engine that services at least two memory banks by producing ECC values with a larger quantity of bits based on respective data stored in the at least two memory banks. By using the shared ECC engine responsive to the data-masking functionality being disabled, the ECC functionality can provide higher data reliability with lower die area utilization.

公开(公告)号：US20240273015A1

公开(公告)日：2024-08-15

申请号：US18440357

申请日：2024-02-13

Applicant: Micron Technology, Inc.

Inventor： Yang Lu ,  Hyun Yoo Lee ,  Kang-Yong Kim

IPC: G06F12/02

CPC classification number: G06F12/0223

Abstract: Described apparatuses and methods provide adaptive selection of a configuration-dependent operand. Adaptive selection enables a die to automatically detect its configuration and dynamically read from or write to configuration-dependent operands of one or more mode registers based on the configuration. In this manner, a memory device with dies having a first byte width (e.g., 1 byte) can be transparent to a memory channel having a second byte width that is larger than the first byte width (e.g., two bytes). For example, two 8-bit dies enabled with aspects of adaptive selection may be coupled to a 16-bit memory channel and each automatically detect its byte position (e.g., upper byte or lower byte). Based on the detected byte position or byte indicator, the 8-bit dies may be configured for use through respective mode registers that correspond to the byte position or assignment of the die.

公开(公告)号：US12009050B2

公开(公告)日：2024-06-11

申请号：US17875960

申请日：2022-07-28

Applicant: Micron Technology, Inc.

Inventor： Yang Lu ,  Kang-Yong Kim

IPC: G11C7/00 ,  G11C7/10 ,  G11C29/46

CPC classification number: G11C7/1063 ,  G11C7/1066 ,  G11C7/1096 ,  G11C29/46

Abstract: Methods, systems, and devices for selective access for grouped memory dies are described. A memory device may be configured with a select die access protocol for a group of memory dies that share a same channel. The protocol may be enabled by one or more commands from the host device, which may be communicated to each of the memory dies of the group via the channel. The command(s) may indicate a first set of one or more memory dies of the group for which a set of commands may be enabled and may also indicate a second set of one or more memory dies of the group for which at least a subset of the set of commands is disabled. When the select die access mode is enabled, the disabled memory dies may be restricted from performing the subset of commands received via the channel.

公开(公告)号：US20240170038A1

公开(公告)日：2024-05-23

申请号：US18511404

申请日：2023-11-16

Applicant: Micron Technology, Inc.

Inventor： Hyun Yoo Lee ,  Smruti Subhash Jhaveri ,  Kang-Yong Kim

IPC: G11C11/406

CPC classification number: G11C11/40618 ,  G11C11/40615

Abstract: Described apparatuses and methods relate to adaptive refresh staggering for a memory system that may support a nondeterministic protocol. To help manage power-delivery networks in a memory system, a memory device can include logic that can be programmed to stagger the start of refresh operations for each die upon receiving a command to enter a lower-power mode, such as self-refresh. The staggered start can be implemented at a channel level, a package level, or both. The programming sets a delay for each die so that initiation of refresh operations is staggered. Thus, a first die can initiate refresh operations when a command to enter the lower-power mode is received (e.g., approximately zero delay). However, initiation of refresh operations for subsequent dies (e.g., “after” the first die) is delayed, which can reduce peak current draw and power consumption.

公开(公告)号：US20240071464A1

公开(公告)日：2024-02-29

申请号：US17823450

申请日：2022-08-30

Applicant: Micron Technology, Inc.

Inventor： Erik T. Barmon ,  Yang Lu ,  Nathaniel J. Meier ,  Kang-Yong Kim

IPC: G11C11/408 ,  G11C7/24 ,  G11C29/18 ,  G11C29/56

CPC classification number: G11C11/408 ,  G11C7/24 ,  G11C29/18 ,  G11C29/56004

Abstract: Described apparatuses and methods enable a system including at least one memory device to load different address scramble patterns on dies of the memory device. The address scramble patterns may include the logical-to-physical conversion of rows in the memory device or the memory dies. In aspects, the apparatuses and methods can change the address scrambles at different intervals, such as after a power reset or when the data stored on the memory device is invalid, not current, flushable, or erasable. The described aspects may reduce effectiveness of usage-based disturb attacks used by malicious actors to discover a layout of a type of particular memory device or memory die.

公开(公告)号：US20240071437A1

公开(公告)日：2024-02-29

申请号：US17823458

申请日：2022-08-30

Applicant: Micron Technology, Inc.

Inventor： Yang Lu ,  Kang-Yong Kim

IPC: G11C7/10 ,  G11C7/20

CPC classification number: G11C7/109 ,  G11C7/1093 ,  G11C7/20

Abstract: Described apparatuses and methods relate to selectively disabling a die that may be included in a multiple-die package without necessarily disabling all the remaining dies within the package. A nonvolatile circuit, such as one or more fuses, may be included within individual dies and/or otherwise incorporated within the package. The nonvolatile circuit maintains a value for the die that is indicative of the operability of the die. Die disablement logic is operatively coupled to the nonvolatile circuit and can disable the die based on the value indicating that the die is unusable. The disabling of the die by the die disablement logic may be controlled by an override signal that allows the disabling or prevents the logic from disabling the die. Thus, the die disablement logic can prevent a defective die from functioning, but the die disablement logic may be overridden for testing or debugging.

公开(公告)号：US20240070101A1

公开(公告)日：2024-02-29

申请号：US17823415

申请日：2022-08-30

Applicant: Micron Technology, Inc.

Inventor： Francesco Douglas Verna-Ketel ,  Hyun Yoo Lee ,  Smruti Subhash Jhaveri ,  John Christopher Sancon ,  Yang Lu ,  Kang-Yong Kim

IPC: G06F13/40 ,  G06F13/16

CPC classification number: G06F13/4027 ,  G06F13/1668

Abstract: Described apparatuses and methods facilitate bus training with multiple dice, such as multiple memory dice. A controller can communicate with multiple dice over a bus to perform bus training by sending a test pattern and receiving in return a feedback pattern indicative of the bits detected by the dice. Because suitable signal timing can differ between dice, even those using the same bus, the controller may attempt to train each die separately from the others. In some situations, however, individualized training may be infeasible. To accommodate such situations, logic associated with two or more dice can combine the bits as detected from the test pattern into a combined feedback pattern. A timing parameter that is jointly suitable for multiple dice can be determined, and the bus training may be concluded, responsive to the combined feedback pattern matching the test pattern. The multiple dice may be stacked or linked.

公开(公告)号：US20230343380A1

公开(公告)日：2023-10-26

申请号：US17660201

申请日：2022-04-21

Applicant: Micron Technology, Inc.

Inventor： John Christopher Sancon ,  Yang Lu ,  Kang-Yong Kim ,  Mark Kalei Hadrick ,  Hyun Yoo Lee

IPC: G11C11/406 ,  G11C11/408

CPC classification number: G11C11/40615 ,  G11C11/40618 ,  G11C11/4085

Abstract: Described apparatuses and methods relate to a bank-level self-refresh for a memory system. A memory device can include a controller with logic that implements self-refresh operations in the memory device. The logic may perform self-refresh operations on a set of banks of the memory device that is less than all banks within the memory device. The set of banks of the memory device may be determined such that the peak current in a power distribution network of the memory device is bounded when the self-refresh operation is performed. Accordingly, bank-level self-refresh can reduce a cost of the memory device of a memory system by enabling use of a less complicated power distribution network. The bank-level self-refresh may also be implemented with different types of refresh operations. Amongst other scenarios, bank-level self-refresh can be deployed in memory-expansion environments.