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147 条记录 (耗时 0.044 秒)

    Vapor escape microchannel heat exchanger
    45.
    发明授权
    Vapor escape microchannel heat exchanger 有权
    蒸汽逃逸微通道换热器

    公开(公告)号：US06994151B2

    公开(公告)日：2006-02-07

    申请号：US10366128

    申请日：2003-02-12

    申请人： Peng Zhou ,  Kenneth Goodson ,  Juan Suntiago

    发明人： Peng Zhou ,  Kenneth Goodson ,  Juan Suntiago

    IPC分类号： F28F7/00

    CPC分类号： H01L23/4275 ,  H01L23/427 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A vapor escape membrane for use in a heat exchanging device, including a heat pipe or heat sink that runs liquid into a cooling region positioned adjacent to the heat producing device, the vapor escape membrane comprising: a porous surface for removing vapor produced from the liquid in the cooling region, the membrane configured to confine the liquid only within the cooling region. The vapor escape membrane transfers vapor to a vapor region within the heat exchanging device, wherein the membrane is configured to prevent liquid in the cooling region from entering the vapor region. The membrane is configured to include a hydrophobic surface between the membrane and the cooling region, wherein the liquid in the cooling region does not flow through the porous surface. The vapor escape membrane includes a plurality of apertures for allowing vapor to transfer therethrough, each of the apertures having a predetermined dimension.

    摘要翻译： 一种用于热交换装置的蒸气逸出膜，包括将液体运送到与发热装置相邻的冷却区域内的热管或散热器，所述蒸汽逸出膜包括：多孔表面，用于去除由液体产生的蒸汽 在冷却区域中，膜构造成仅将液体限制在冷却区域内。 蒸汽逸出膜将蒸气转移到热交换装置内的蒸气区域，其中膜被构造成防止冷却区域中的液体进入蒸气区域。 膜被配置为在膜和冷却区域之间包括疏水表面，其中冷却区域中的液体不会流过多孔表面。 蒸汽逸出膜包括多个孔，用于允许蒸气从其中转移，每个孔具有预定尺寸。

    Channeled flat plate fin heat exchange system, device and method
    46.
    发明授权
    Channeled flat plate fin heat exchange system, device and method 有权
    通风平板翅片换热系统，装置及方法

    公开(公告)号：US06988535B2

    公开(公告)日：2006-01-24

    申请号：US10699505

    申请日：2003-10-30

    申请人： Girish Upadhya ,  Richard Herms ,  Peng Zhou ,  Kenneth Goodson

    发明人： Girish Upadhya ,  Richard Herms ,  Peng Zhou ,  Kenneth Goodson

    IPC分类号： F28F7/00

    CPC分类号： F28F3/02 ,  F04B17/00 ,  F04B19/006 ,  F28D15/0266 ,  F28F3/12 ,  F28F2210/10 ,  H01L23/473 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A device, method, and system for a fluid cooled channeled heat exchange device is disclosed. The fluid cooled channeled heat exchange device utilizes fluid circulated through a channel heat exchanger for high heat dissipation and transfer area per unit volume. The device comprises a highly thermally conductive material, preferably with less than 200 W/m-K. The preferred channel heat exchanger comprises two coupled flat plates and a plurality of fins coupled to the flat plates. At least one of the plates preferably to receive flow of a fluid in a heated state. The fluid preferably carries heat from a heat source (such as a CPU, for example). Specifically, at least one of the plates preferably comprises a plurality of condenser channels configured to receive, to condense, and to cool the fluid in the heated state. The fluid in a cooler state is preferably carried from the device to the heat source, thereby cooling the heat source.

    摘要翻译： 公开了一种用于流体冷却通道式热交换装置的装置，方法和系统。 流体冷却通道热交换装置利用通过通道热交换器循环的流体，用于高散热和每单位体积的传递面积。 该装置包括高导热性材料，优选小于200W / m-K。 优选的通道热交换器包括两个联接的平板和耦合到平板的多个翅片。 至少一个板优选地接收处于加热状态的流体的流动。 流体优选地承载来自热源（例如CPU）的热量。 具体地，至少一个板优选地包括多个冷凝器通道，其构造成在加热状态下接收，冷凝和冷却流体。 处于较冷状态的流体优选从装置运送到热源，从而冷却热源。

    LED mining lamp
    48.
    外观设计
    LED mining lamp 有权

    公开(公告)号：USD792988S1

    公开(公告)日：2017-07-25

    申请号：US29564907

    申请日：2016-05-17

    申请人： Peng Zhou

    设计人： Peng Zhou

    Methods of protecting elevated polysilicon structures during etching processes
    49.
    发明授权
    Methods of protecting elevated polysilicon structures during etching processes 有权
    在蚀刻过程中保护高架多晶硅结构的方法

    公开(公告)号：US08569173B2

    公开(公告)日：2013-10-29

    申请号：US13314270

    申请日：2011-12-08

    申请人： Liang Li ,  Huang Liu ,  Alex See ,  Soh Yun Siah ,  Xue Song Rao ,  Peng Zhou

    发明人： Liang Li ,  Huang Liu ,  Alex See ,  Soh Yun Siah ,  Xue Song Rao ,  Peng Zhou

    IPC分类号： H01L21/302

    CPC分类号： H01L27/11534 ,  H01L21/28273

    摘要： Disclosed herein are various methods of protecting elevated polysilicon structures during etching processes. In one example, the method includes forming a layer stack above a semiconducting substrate for a memory device, forming a protective mask layer above the layer stack of the memory device and performing at least one etching process to define a gate electrode for a transistor while the protective mask is in position above the layer stack for the memory device.

    摘要翻译： 本文公开了在蚀刻工艺期间保护升高的多晶硅结构的各种方法。 在一个示例中，该方法包括在用于存储器件的半导体衬底之上形成层堆叠，在存储器件的层堆叠之上形成保护掩模层，并执行至少一个蚀刻工艺以限定晶体管的栅电极，而 保护罩位于存储器件的层堆叠之上。