Compliant bonding structures for semiconductor devices
    42.
    发明授权
    Compliant bonding structures for semiconductor devices 有权
    适用于半导体器件的接合结构

    公开(公告)号:US08053905B2

    公开(公告)日:2011-11-08

    申请号:US12897866

    申请日:2010-10-05

    IPC分类号: H01L23/48

    摘要: A light emitting device includes a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region, a metal p-contact disposed on the p-type region, and a metal n-contact disposed on the n-type region. The metal p-contact and the metal n-contact are both formed on the same side of the semiconductor structure. The light emitting device is connected to a mount by a bonding structure. The bonding structure includes a plurality of metal regions separated by gaps and a metal structure disposed between the light emitting device and the mount proximate to an edge of the light emitting device. The metal structure is configured such that during bonding, the metal structure forms a continuous seal between the light emitting device and the mount.

    摘要翻译: 发光器件包括:半导体结构,包括设置在n型区域和p型区域之间的发光层,设置在p型区域上的金属p型触点和设置在n型区域上的金属n型触点 型区域。 金属p型接触和金属n型接触都形成在半导体结构的同一侧。 发光器件通过接合结构连接到安装件。 接合结构包括由间隙隔开的多个金属区域和设置在发光器件和靠近发光器件的边缘的安装件之间的金属结构。 金属结构构造成使得在接合期间,金属结构在发光器件和安装座之间形成连续的密封。

    PACKAGE-INTEGRATED THIN FILM LED
    43.
    发明申请
    PACKAGE-INTEGRATED THIN FILM LED 有权
    封装集成薄膜LED

    公开(公告)号:US20110084301A1

    公开(公告)日:2011-04-14

    申请号:US12969709

    申请日:2010-12-16

    IPC分类号: H01L33/48 H01L33/36

    摘要: LED epitaxial layers (n-type, p-type, and active layers) are grown on a substrate. For each die, the n and p layers are electrically bonded to a package substrate that extends beyond the boundaries of the LED die such that the LED layers are between the package substrate and the growth substrate. The package substrate provides electrical contacts and conductors leading to solderable package connections. The growth substrate is then removed. Because the delicate LED layers were bonded to the package substrate while attached to the growth substrate, no intermediate support substrate for the LED layers is needed. The relatively thick LED epitaxial layer that was adjacent the removed growth substrate is then thinned and its top surface processed to incorporate light extraction features. There is very little absorption of light by the thinned epitaxial layer, there is high thermal conductivity to the package because the LED layers are directly bonded to the package substrate without any support substrate therebetween, and there is little electrical resistance between the package and the LED layers so efficiency (light output vs. power input) is high. The light extraction features of the LED layer further improves efficiency.

    摘要翻译: 在衬底上生长LED外延层(n型,p型和有源层)。 对于每个管芯,n和p层电连接到延伸超过LED管芯边界的封装衬底,使得LED层位于封装衬底和生长衬底之间。 封装衬底提供电触头和导体,导致可焊接的封装连接。 然后除去生长底物。 因为精细的LED层在附着于生长衬底的同时与封装衬底结合,所以不需要用于LED层的中间支撑衬底。 然后将与去除的生长衬底相邻的较厚的LED外延层变薄,并将其顶表面加工成掺入光提取特征。 通过减薄的外延层对光的吸收非常小,因为LED层直接接合到封装基板上而没有任何支撑基板,因此封装和LED之间的电阻很小,因此封装的导热性很高 层效率(光输出与功率输入)高。 LED层的光提取特性进一步提高了效率。

    Complaint bonding structures for semiconductor devices
    44.
    发明授权
    Complaint bonding structures for semiconductor devices 有权
    用于半导体器件的投诉结合结构

    公开(公告)号:US07875984B2

    公开(公告)日:2011-01-25

    申请号:US12397392

    申请日:2009-03-04

    IPC分类号: H01L23/48

    摘要: A compliant bonding structure is disposed between a semiconductor light emitting device and a mount. When the semiconductor light emitting device is attached to the mount, for example by providing pressure, heat, and/or ultrasonic energy to the semiconductor light emitting device, the compliant bonding structure collapses to partially fill a space between the semiconductor light emitting device and the mount. In some embodiments, the compliant bonding structure is plurality of metal bumps that undergo plastic deformation during bonding. In some embodiments, the compliant bonding structure is a porous metal layer.

    摘要翻译: 在半导体发光器件和安装件之间设置有兼容的结合结构。 当半导体发光器件例如通过向半导体发光器件提供压力,加热和/或超声能量而将半导体发光器件附接到安装件时,柔性结合结构塌缩以部分地填充半导体发光器件和 安装。 在一些实施例中,柔性接合结构是在接合期间经历塑性变形的多个金属凸块。 在一些实施例中,柔性结合结构是多孔金属层。

    WAVELENGTH-CONVERTED SEMICONDUCTOR LIGHT EMITTING DEVICE INCLUDING A FILTER AND A SCATTERING STRUCTURE
    45.
    发明申请
    WAVELENGTH-CONVERTED SEMICONDUCTOR LIGHT EMITTING DEVICE INCLUDING A FILTER AND A SCATTERING STRUCTURE 审中-公开
    波长转换半导体发光器件,包括滤光片和散射结构

    公开(公告)号:US20110012147A1

    公开(公告)日:2011-01-20

    申请号:US12503506

    申请日:2009-07-15

    IPC分类号: H01L33/00

    摘要: A semiconductor structure comprises a light emitting layer disposed between an n-type region and a p-type region. A wavelength converting material is disposed over the semiconductor structure. The wavelength converting material is configured to absorb light emitted by the semiconductor structure and emit light of a different wavelength. A filter configured to reflect blue ambient light is disposed over the wavelength converting material. A scattering structure is disposed over the wavelength converting layer. The scattering structure is configured to scatter light. In some embodiments, the scattering structure is a transparent material having a rough surface, containing non-wavelength-converting particles that appear substantially white in ambient light, or including both a rough surface and white particles.

    摘要翻译: 半导体结构包括设置在n型区域和p型区域之间的发光层。 波长转换材料设置在半导体结构上。 波长转换材料被配置为吸收由半导体结构发射的光并发射不同波长的光。 布置成反射蓝色环境光的滤光器设置在波长转换材料上。 散射结构设置在波长转换层上。 散射结构被配置为散射光。 在一些实施例中,散射结构是具有粗糙表面的透明材料,其包含在环境光中基本上呈白色的非波长转换颗粒,或包括粗糙表面和白色颗粒。

    COMPLIANT BONDING STRUCTURES FOR SEMICONDUCTOR DEVICES
    46.
    发明申请
    COMPLIANT BONDING STRUCTURES FOR SEMICONDUCTOR DEVICES 有权
    用于半导体器件的合适的结合结构

    公开(公告)号:US20100224902A1

    公开(公告)日:2010-09-09

    申请号:US12397392

    申请日:2009-03-04

    IPC分类号: H01L33/00

    摘要: A compliant bonding structure is disposed between a semiconductor light emitting device and a mount. When the semiconductor light emitting device is attached to the mount, for example by providing pressure, heat, and/or ultrasonic energy to the semiconductor light emitting device, the compliant bonding structure collapses to partially fill a space between the semiconductor light emitting device and the mount. In some embodiments, the compliant bonding structure is plurality of metal bumps that undergo plastic deformation during bonding. In some embodiments, the compliant bonding structure is a porous metal layer.

    摘要翻译: 在半导体发光器件和安装件之间设置有兼容的结合结构。 当半导体发光器件例如通过向半导体发光器件提供压力,加热和/或超声能量而将半导体发光器件附接到安装件时,柔性结合结构塌缩以部分地填充半导体发光器件和 安装。 在一些实施例中,柔性接合结构是在接合期间经历塑性变形的多个金属凸块。 在一些实施例中,柔性结合结构是多孔金属层。

    METHODS OF FORMING RELAXED LAYERS OF SEMICONDUCTOR MATERIALS, SEMICONDUCTOR STRUCTURES, DEVICES AND ENGINEERED SUBSTRATES INCLUDING SAME
    47.
    发明申请
    METHODS OF FORMING RELAXED LAYERS OF SEMICONDUCTOR MATERIALS, SEMICONDUCTOR STRUCTURES, DEVICES AND ENGINEERED SUBSTRATES INCLUDING SAME 有权
    形成半导体材料的松散层的方法,半导体结构,器件和包括其中的工程衬底

    公开(公告)号:US20100176490A1

    公开(公告)日:2010-07-15

    申请号:US12563953

    申请日:2009-09-21

    IPC分类号: H01L29/20 H01L21/20

    摘要: Methods of fabricating relaxed layers of semiconductor materials include forming structures of a semiconductor material overlying a layer of a compliant material, and subsequently altering a viscosity of the compliant material to reduce strain within the semiconductor material. The compliant material may be reflowed during deposition of a second layer of semiconductor material. The compliant material may be selected so that, as the second layer of semiconductor material is deposited, a viscosity of the compliant material is altered imparting relaxation of the structures. In some embodiments, the layer of semiconductor material may comprise a III-V type semiconductor material, such as, for example, indium gallium nitride. Methods of fabricating semiconductor structures and devices are also disclosed. Novel intermediate structures are formed during such methods. Engineered substrates include a plurality of structures comprising a semiconductor material disposed on a layer of material exhibiting a changeable viscosity.

    摘要翻译: 制造半导体材料的松弛层的方法包括形成覆盖柔性材料层的半导体材料的结构,随后改变柔性材料的粘度以减小半导体材料内的应变。 在沉积第二层半导体材料期间,柔性材料可以回流。 可以选择柔性材料,使得当沉积第二层半导体材料时,改变柔性材料的粘度赋予结构松弛性。 在一些实施例中,半导体材料层可以包括III-V型半导体材料,例如氮化铟镓。 还公开了制造半导体结构和器件的方法。 在这种方法中形成了新的中间结构。 工程衬底包括多个结构,其包括设置在表现出可变粘度的材料层上的半导体材料。

    LED with porous diffusing reflector
    49.
    发明授权
    LED with porous diffusing reflector 有权
    LED带多孔漫反射器

    公开(公告)号:US07601989B2

    公开(公告)日:2009-10-13

    申请号:US11692132

    申请日:2007-03-27

    IPC分类号: H01L33/00

    摘要: In one embodiment, an AlInGaP LED includes a bottom n-type layer, an active layer, a top p-type layer, and a thick n-type GaP layer over the top p-type layer. The thick n-type GaP layer is then subjected to an electrochemical etch process that causes the n-type GaP layer to become porous and light-diffusing. Electrical contact is made to the p-GaP layer under the porous n-GaP layer by providing metal-filled vias through the porous layer, or electrical contact is made through non-porous regions of the GaP layer between porous regions. The LED chip may be mounted on a submount with the porous n-GaP layer facing the submount surface. The pores and metal layer reflect and diffuse the light, which greatly increases the light output of the LED. Other embodiments of the LED structure are described.

    摘要翻译: 在一个实施例中,AlInGaP LED包括顶部p型层上的底部n型层,有源层,顶部p型层和厚n型GaP层。 然后对厚的n型GaP层进行电化学蚀刻工艺,其使得n型GaP层变得多孔和光扩散。 通过提供通过多孔层的金属填充的通孔,在多孔n-GaP层下面的p-GaP层进行电接触,或者通过多孔区域之间的GaP层的无孔区域进行电接触。 LED芯片可以安装在多孔n-GaP层面向底座表面的基座上。 孔和金属层反射和扩散光,这大大增加了LED的光输出。 描述LED结构的其它实施例。