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公开(公告)号：US20150028347A1
公开(公告)日：2015-01-29
申请号：US14510914
申请日：2014-10-09
Applicant: Micron Technology, Inc.
Inventor： Scott D. Schellhammer , Scott E. Sills , Lifang Xu , Thomas Gehrke , Zaiyuan Ren , Anton J. De Villiers
CPC classification number: H01L33/24 , H01L33/007 , H01L33/16 , H01L33/22 , H01L33/32
Abstract: Light emitting diodes and associated methods of manufacturing are disclosed herein. In one embodiment, a light emitting diode (LED) includes a substrate, a semiconductor material carried by the substrate, and an active region proximate to the semiconductor material. The semiconductor material has a first surface proximate to the substrate and a second surface opposite the first surface. The second surface of the semiconductor material is generally non-planar, and the active region generally conforms to the non-planar second surface of the semiconductor material.
Abstract translation: 本文公开了发光二极管和相关的制造方法。 在一个实施例中，发光二极管（LED）包括衬底，由衬底承载的半导体材料和靠近半导体材料的有源区。 半导体材料具有靠近基板的第一表面和与第一表面相对的第二表面。 半导体材料的第二表面通常是非平面的，并且有源区域通常符合半导体材料的非平面第二表面。
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42.发明申请SOLID-STATE TRANSDUCER DEVICES WITH OPTICALLY-TRANSMISSIVE CARRIER SUBSTRATES AND RELATED SYSTEMS, METHODS, AND DEVICES 有权具有光传输载体基板的固态传感器装置及相关系统，方法和装置公开(公告)号：US20140203239A1
公开(公告)日：2014-07-24
申请号：US13747182
申请日：2013-01-22
Applicant: MICRON TECHNOLOGY, INC.
Inventor： Martin F. Schubert , Vladimir Odnoblyudov , Scott D. Schellhammer
IPC: H01L31/02 , H01L31/0352 , H01L33/58 , H01L31/0236
CPC classification number: H01L33/0025 , H01L25/0753 , H01L25/167 , H01L27/14687 , H01L31/02 , H01L31/0236 , H01L31/035209 , H01L33/0079 , H01L33/06 , H01L33/22 , H01L33/32 , H01L33/486 , H01L33/62 , H01L2924/0002 , Y02E10/50 , H01L2924/00
Abstract: Semiconductor device assemblies having solid-state transducer (SST) devices and associated semiconductor devices, systems, and are disclosed herein. In one embodiment, a method of forming a semiconductor device assembly includes forming a support substrate, a transfer structure, and a plurality semiconductor structures between the support substrate and the transfer structure. The method further includes removing the support substrate to expose an active surface of the individual semiconductor structures and a trench between the individual semiconductor structures. The semiconductor structures can be attached to a carrier substrate that is optically transmissive such that the active surface can emit and/or receive the light through the carrier substrate. The individual semiconductor structures can then be processed on the carrier substrate with the support substrate removed. In some embodiments, the individual semiconductor structures are singulated from the semiconductor device assembly and include a section of the carrier substrate attached to each of the individual semiconductor structures.
Abstract translation: 具有固态换能器（SST）器件和相关半导体器件，系统的半导体器件组件，并在此公开。 在一个实施例中，形成半导体器件组件的方法包括在支撑衬底和转移结构之间形成支撑衬底，转移结构和多个半导体结构。 该方法还包括去除支撑衬底以暴露各个半导体结构的有源表面和各个半导体结构之间的沟槽。 半导体结构可以附着到光学透射性的载体衬底上，使得有源表面可以通过载体衬底发射和/或接收光。 然后可以在移除支撑衬底的情况下在载体衬底上处理各个半导体结构。 在一些实施例中，各个半导体结构从半导体器件组件分离，并且包括连接到每个单个半导体结构的载体衬底的一部分。
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公开(公告)号：US20230387353A1
公开(公告)日：2023-11-30
申请号：US18359795
申请日：2023-07-26
Applicant: Micron Technology, Inc.
Inventor： Lifang Xu , Scott D. Schellhammer , Shan Ming Mou , Michael J. Bernhardt
IPC: H01L33/38 , H01L31/0216 , H01L33/22 , H01L31/0236 , H01L33/42 , H01L33/58
CPC classification number: H01L33/38 , H01L31/02168 , H01L33/22 , H01L31/0236 , H01L33/42 , H01L33/58 , H01L2933/0091 , Y02E10/50
Abstract: Textured optoelectronic devices and associated methods of manufacture are disclosed herein. In several embodiments, a method of manufacturing a solid state optoelectronic device can include forming a conductive transparent texturing material on a substrate. The method can further include forming a transparent conductive material on the texturing material. Upon heating the device, the texturing material causes the conductive material to grow a plurality of protuberances. The protuberances can improve current spreading and light extraction from the device.
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公开(公告)号：US11769854B2
公开(公告)日：2023-09-26
申请号：US17568877
申请日：2022-01-05
Applicant: Micron Technology, Inc.
Inventor： Scott D. Schellhammer
CPC classification number: H01L33/025 , H01L33/0095 , H01L33/06 , H01L33/24 , H01L33/32
Abstract: Semiconductor lighting devices and associated methods of manufacturing are disclosed herein. In one embodiment, a semiconductor lighting device includes a first semiconductor material, a second semiconductor material spaced apart from the first semiconductor material, and an active region between the first and second semiconductor materials. The semiconductor lighting device also includes an indentation extending from the second semiconductor material toward the active region and the first semiconductor material and an insulating material in the indentation of the solid state lighting structure.
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45.发明授权公开(公告)号：US11222874B2
公开(公告)日：2022-01-11
申请号：US16273579
申请日：2019-02-12
Applicant: Micron Technology, Inc.
Inventor： Scott D. Schellhammer , Vladimir Odnoblyudov , Jeremy S. Frei
IPC: H01L25/075 , H01L33/00 , H01L33/62 , H01L23/00 , H01L21/18 , H01L21/20 , H01L21/447 , H01L23/495 , H01L33/48
Abstract: Discontinuous bonds for semiconductor devices are disclosed herein. A device in accordance with a particular embodiment includes a first substrate and a second substrate, with at least one of the first substrate and the second substrate having a plurality of solid-state transducers. The second substrate can include a plurality of projections and a plurality of intermediate regions and can be bonded to the first substrate with a discontinuous bond. Individual solid-state transducers can be disposed at least partially within corresponding intermediate regions and the discontinuous bond can include bonding material bonding the individual solid-state transducers to blind ends of corresponding intermediate regions. Associated methods and systems of discontinuous bonds for semiconductor devices are disclosed herein.
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Patent Agency Ranking
公开(公告)号：US20210184079A1
公开(公告)日：2021-06-17
申请号：US17175224
申请日：2021-02-12
Applicant: Micron Technology, Inc.
Inventor： Scott D. Schellhammer , Scott E. Sills , Lifang Xu , Thomas Gehrke , Zaiyuan Ren , Anton J. De Villiers
Abstract: Light emitting diodes and associated methods of manufacturing are disclosed herein. In one embodiment, a light emitting diode (LED) includes a substrate, a semiconductor material carried by the substrate, and an active region proximate to the semiconductor material. The semiconductor material has a first surface proximate to the substrate and a second surface opposite the first surface. The second surface of the semiconductor material is generally non-planar, and the active region generally conforms to the non-planar second surface of the semiconductor material.
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公开(公告)号：US20200335665A1
公开(公告)日：2020-10-22
申请号：US16922940
申请日：2020-07-07
Applicant: Micron Technology, Inc.
Inventor： Lifang Xu , Scott D. Schellhammer , Shan Ming Mou , Michael J. Bernhardt
IPC: H01L33/38 , H01L31/0216 , H01L33/22 , H01L31/0236 , H01L33/42 , H01L33/58
Abstract: Textured optoelectronic devices and associated methods of manufacture are disclosed herein, in several embodiments, a method of manufacturing a solid state optoelectronic device can include forming a conductive transparent texturing material on a substrate. The method can further include forming a transparent conductive material on the texturing material. Upon heating the device, the texturing material causes the conductive material to grow a plurality of protuberances. The protuberances can improve current spreading and light extraction from the device.
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公开(公告)号：US10756236B2
公开(公告)日：2020-08-25
申请号：US16104857
申请日：2018-08-17
Applicant: Micron Technology, Inc.
Inventor： Lifang Xu , Scott D. Schellhammer , Shan Ming Mou , Michael J. Bernhardt
IPC: H01L51/52 , H01L33/38 , H01L31/0216 , H01L33/22 , H01L31/0236 , H01L33/42 , H01L33/58
Abstract: Textured optoelectronic devices and associated methods of manufacture are disclosed herein. In several embodiments, a method of manufacturing a solid state optoelectronic device can include forming a conductive transparent texturing material on a substrate. The method can further include forming a transparent conductive material on the texturing material. Upon heating the device, the texturing material causes the conductive material to grow a plurality of protuberances. The protuberances can improve current spreading and light extraction from the device.
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公开(公告)号：US20200044179A1
公开(公告)日：2020-02-06
申请号：US16597462
申请日：2019-10-09
Applicant: Micron Technology, Inc.
Inventor： Vladimir Odnoblyudov , Scott D. Schellhammer
Abstract: A vertical solid state lighting (SSL) device is disclosed. In one embodiment, the SSL device includes a light emitting structure formed on a growth substrate. Individual SSL devices can include a embedded contact formed on the light emitting structure and a metal substrate plated at a side at least proximate to the embedded contact. The plated substrate has a sufficient thickness to support the light emitting structure without bowing.
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公开(公告)号：US10483481B2
公开(公告)日：2019-11-19
申请号：US15298131
申请日：2016-10-19
Applicant: Micron Technology, Inc.
Inventor： Vladimir Odnoblyudov , Scott D. Schellhammer
Abstract: A vertical solid state lighting (SSL) device is disclosed. In one embodiment, the SSL device includes a light emitting structure formed on a growth substrate. Individual SSL devices can include a embedded contact formed on the light emitting structure and a metal substrate plated at a side at least proximate to the embedded contact. The plated substrate has a sufficient thickness to support the light emitting structure without bowing.
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