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1.发明授权公开(公告)号：US12132155B2
公开(公告)日：2024-10-29
申请号：US17145752
申请日：2021-01-11
IPC分类号： H01L33/52 , H01L21/56 , H01L21/683 , H01L21/78 , H01L23/00 , H01L23/31 , H01L33/00 , H01L33/20 , H01L33/44 , H01L33/62 , H01S5/02 , H10K50/84 , H10K50/844 , H10K71/00
CPC分类号： H01L33/52 , H01L21/561 , H01L21/78 , H01L23/3185 , H01L33/0095 , H01L33/20 , H01L33/44 , H01L33/62 , H01S5/0201 , H01L21/6836 , H01L24/11 , H01L24/13 , H01L24/97 , H01L2221/68327 , H01L2221/68377 , H01L2224/1146 , H01L2224/13022 , H01L2224/13124 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/97 , H01L2924/12041 , H01L2924/12042 , H01L2924/12044 , H01L2933/005 , H01L2933/0066 , H10K50/84 , H10K50/844 , H10K71/00 , H10K71/851 , Y02P80/30 , H01L2224/97 , H01L2224/11 , H01L2224/1146 , H01L2924/00014 , H01L2224/13124 , H01L2924/00014 , H01L2224/13147 , H01L2924/00014 , H01L2224/13144 , H01L2924/00014 , H01L2224/13139 , H01L2924/00014 , H01L2924/12041 , H01L2924/00 , H01L2924/12042 , H01L2924/00 , H01L2924/12044 , H01L2924/00
摘要： Etched trenches in a bond material for die singulation, and associated systems and methods are disclosed. A method for solid state transducer device singulation in accordance with one embodiment includes forming a plurality of trenches by etching through a metallic bond material forming a bond between a carrier substrate and a plurality of the dies and singulating the carrier substrate along the trenches to separate the dies. In particular embodiments, the trenches extend into the carrier substrate. In further particular embodiments, the dies are at least partially encapsulated in a dielectric material.
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2.发明授权Engineered substrate assemblies with thermally opaque materials, and associated systems, devices, and methods 有权具有不透热材料的工程衬底组件，以及相关系统，装置和方法公开(公告)号：US09230847B2
公开(公告)日：2016-01-05
申请号：US14043544
申请日：2013-10-01
发明人： Joseph G. Coones , Jeremy S. Frei
IPC分类号： H01L29/06 , H01L21/762 , H01L21/683
CPC分类号： H01L21/76251 , H01L21/6835 , H01L33/007 , H01L33/0079 , H01L33/32 , H01L2221/68327 , H01L2221/6835 , H01L2221/68363 , H01L2221/68368 , H01L2221/68381
摘要： Engineered substrates having thermally opaque materials for preventing transmission of radiative energy during epitaxial growth processes and for separating substrates from epitaxially grown semiconductor structures and associated systems and methods are disclosed herein. In several embodiments, for example, an engineered substrate can be manufactured by forming a thermally opaque material at an upper surface of a handle substrate and bonding an epitaxial formation structure on the handle substrate such that the thermally opaque material is between the epitaxial formation structure and the handle substrate. In various embodiments, the thermally opaque material at least partially blocks radiative heat transmission between the handle substrate and the epitaxial formation structure, for example, to provide increased accuracy of epitaxy process temperature measurements and/or increased uniformity of epitaxy growth characteristics across the engineered substrate.
摘要翻译： 本文公开了具有热不透明材料的工程衬底，用于防止在外延生长过程中传播辐射能并且用于从外延生长的半导体结构分离衬底以及相关系统和方法。 在几个实施例中，例如，可以通过在手柄基板的上表面处形成不透热材料并将外延形成结构结合在手柄基板上来制造工程化基板，使得不透热材料位于外延形成结构和 手柄基板。 在各种实施例中，热不透明材料至少部分地阻挡处理衬底和外延形成结构之间的辐射热传递，例如以提供外延工艺温度测量的更高精度和/或跨工程衬底的增加的外延生长特性的均匀性 。
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3.发明授权公开(公告)号：US11901342B2
公开(公告)日：2024-02-13
申请号：US17570973
申请日：2022-01-07
IPC分类号： H01L25/075 , H01L33/00 , H01L33/62 , H01L23/00 , H01L21/18 , H01L21/20 , H01L21/447 , H01L23/495 , H01L33/48
CPC分类号： H01L25/0753 , H01L21/187 , H01L21/2007 , H01L21/447 , H01L23/49513 , H01L24/04 , H01L24/06 , H01L24/83 , H01L24/94 , H01L24/97 , H01L33/0066 , H01L33/0093 , H01L33/0095 , H01L33/486 , H01L33/62 , H01L24/32 , H01L2224/32225 , H01L2224/32245 , H01L2224/83001 , H01L2224/83005 , H01L2224/8314 , H01L2224/83121 , H01L2224/83193 , H01L2924/12041 , H01L2924/12042 , H01L2924/12041 , H01L2924/00 , H01L2924/12042 , H01L2924/00
摘要： Discontinuous bonds for semiconductor devices are disclosed herein. A device in accordance with a particular embodiment includes a first substrate and a second substrate, with at least one of the first substrate and the second substrate having a plurality of solid-state transducers. The second substrate can include a plurality of projections and a plurality of intermediate regions and can be bonded to the first substrate with a discontinuous bond. Individual solid-state transducers can be disposed at least partially within corresponding intermediate regions and the discontinuous bond can include bonding material bonding the individual solid-state transducers to blind ends of corresponding intermediate regions. Associated methods and systems of discontinuous bonds for semiconductor devices are disclosed herein.
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4.发明申请公开(公告)号：US20220130807A1
公开(公告)日：2022-04-28
申请号：US17570973
申请日：2022-01-07
IPC分类号： H01L25/075 , H01L33/00 , H01L33/62 , H01L23/00 , H01L21/18 , H01L21/20 , H01L21/447 , H01L23/495 , H01L33/48
摘要： Discontinuous bonds for semiconductor devices are disclosed herein. A device in accordance with a particular embodiment includes a first substrate and a second substrate, with at least one of the first substrate and the second substrate having a plurality of solid-state transducers. The second substrate can include a plurality of projections and a plurality of intermediate regions and can be bonded to the first substrate with a discontinuous bond. Individual solid-state transducers can be disposed at least partially within corresponding intermediate regions and the discontinuous bond can include bonding material bonding the individual solid-state transducers to blind ends of corresponding intermediate regions. Associated methods and systems of discontinuous bonds for semiconductor devices are disclosed herein.
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5.发明申请公开(公告)号：US20180301602A1
公开(公告)日：2018-10-18
申请号：US16008836
申请日：2018-06-14
摘要： Etched trenches in a bond material for die singulation, and associated systems and methods are disclosed. A method for solid state transducer device singulation in accordance with one embodiment includes forming a plurality of trenches by etching through a metallic bond material forming a bond between a carrier substrate and a plurality of the dies and singulating the carrier substrate along the trenches to separate the dies. In particular embodiments, the trenches extend into the carrier substrate. In further particular embodiments, the dies are at least partially, encapsulated in a dielectric material.
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6.发明公开公开(公告)号：US20240186298A1
公开(公告)日：2024-06-06
申请号：US18439441
申请日：2024-02-12
IPC分类号： H01L25/075 , H01L21/18 , H01L21/20 , H01L21/447 , H01L23/00 , H01L23/495 , H01L33/00 , H01L33/48 , H01L33/62
CPC分类号： H01L25/0753 , H01L21/187 , H01L21/2007 , H01L21/447 , H01L23/49513 , H01L24/04 , H01L24/06 , H01L24/83 , H01L24/94 , H01L24/97 , H01L33/0066 , H01L33/0093 , H01L33/0095 , H01L33/486 , H01L33/62 , H01L24/32 , H01L2224/32225 , H01L2224/32245 , H01L2224/83001 , H01L2224/83005 , H01L2224/83121 , H01L2224/8314 , H01L2224/83193 , H01L2924/12041 , H01L2924/12042
摘要： Discontinuous bonds for semiconductor devices are disclosed herein. A device in accordance with a particular embodiment includes a first substrate and a second substrate, with at least one of the first substrate and the second substrate having a plurality of solid-state transducers. The second substrate can include a plurality of projections and a plurality of intermediate regions and can be bonded to the first substrate with a discontinuous bond. Individual solid-state transducers can be disposed at least partially within corresponding intermediate regions and the discontinuous bond can include bonding material bonding the individual solid-state transducers to blind ends of corresponding intermediate regions. Associated methods and systems of discontinuous bonds for semiconductor devices are disclosed herein.
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7.发明申请公开(公告)号：US20160336302A1
公开(公告)日：2016-11-17
申请号：US15159237
申请日：2016-05-19
IPC分类号： H01L25/075 , H01L33/62 , H01L33/00 , H01L33/48
CPC分类号： H01L25/0753 , H01L21/187 , H01L21/2007 , H01L21/447 , H01L23/49513 , H01L24/04 , H01L24/06 , H01L24/32 , H01L24/83 , H01L24/94 , H01L24/97 , H01L33/0066 , H01L33/0079 , H01L33/0095 , H01L33/486 , H01L33/62 , H01L2224/32225 , H01L2224/32245 , H01L2224/83001 , H01L2224/83005 , H01L2224/83121 , H01L2224/8314 , H01L2224/83193 , H01L2924/12041 , H01L2924/12042 , H01L2924/00
摘要： Discontinuous bonds for semiconductor devices are disclosed herein. A device in accordance with a particular embodiment includes a first substrate and a second substrate, with at least one of the first substrate and the second substrate having a plurality of solid-state transducers. The second substrate can include a plurality of projections and a plurality of intermediate regions and can be bonded to the first substrate with a discontinuous bond. Individual solid-state transducers can be disposed at least partially within corresponding intermediate regions and the discontinuous bond can include bonding material bonding the individual solid-state transducers to blind ends of corresponding intermediate regions. Associated methods and systems of discontinuous bonds for semiconductor devices are disclosed herein.
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8.发明申请DISCONTINUOUS PATTERNED BONDS FOR SEMICONDUCTOR DEVICES AND ASSOCIATED SYSTEMS AND METHODS 有权用于半导体器件和相关系统和方法的不连续图案公开(公告)号：US20150357314A1
公开(公告)日：2015-12-10
申请号：US14738663
申请日：2015-06-12
IPC分类号： H01L25/075 , H01L33/62 , H01L33/48
CPC分类号： H01L25/0753 , H01L21/187 , H01L21/2007 , H01L21/447 , H01L23/49513 , H01L24/04 , H01L24/06 , H01L24/32 , H01L24/83 , H01L24/94 , H01L24/97 , H01L33/0066 , H01L33/0079 , H01L33/0095 , H01L33/486 , H01L33/62 , H01L2224/32225 , H01L2224/32245 , H01L2224/83001 , H01L2224/83005 , H01L2224/83121 , H01L2224/8314 , H01L2224/83193 , H01L2924/12041 , H01L2924/12042 , H01L2924/00
摘要： Discontinuous bonds for semiconductor devices are disclosed herein. A device in accordance with a particular embodiment includes a first substrate and a second substrate, with at least one of the first substrate and the second substrate having a plurality of solid-state transducers. The second substrate can include a plurality of projections and a plurality of intermediate regions and can be bonded to the first substrate with a discontinuous bond. Individual solid-state transducers can be disposed at least partially within corresponding intermediate regions and the discontinuous bond can include bonding material bonding the individual solid-state transducers to blind ends of corresponding intermediate regions. Associated methods and systems of discontinuous bonds for semiconductor devices are disclosed herein.
摘要翻译： 本文公开了用于半导体器件的不连续键。 根据特定实施例的装置包括第一基板和第二基板，第一基板和第二基板中的至少一个具有多个固态换能器。 第二基板可以包括多个突起和多个中间区域，并且可以以不连续的键连接到第一基板。 单独的固态换能器可以至少部分地设置在相应的中间区域内，并且不连续键可以包括将各个固态换能器接合到相应的中间区域的盲端的粘合材料。 本文公开了用于半导体器件的不连续键的相关方法和系统。
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9.发明授权公开(公告)号：US11222874B2
公开(公告)日：2022-01-11
申请号：US16273579
申请日：2019-02-12
IPC分类号： H01L25/075 , H01L33/00 , H01L33/62 , H01L23/00 , H01L21/18 , H01L21/20 , H01L21/447 , H01L23/495 , H01L33/48
摘要： Discontinuous bonds for semiconductor devices are disclosed herein. A device in accordance with a particular embodiment includes a first substrate and a second substrate, with at least one of the first substrate and the second substrate having a plurality of solid-state transducers. The second substrate can include a plurality of projections and a plurality of intermediate regions and can be bonded to the first substrate with a discontinuous bond. Individual solid-state transducers can be disposed at least partially within corresponding intermediate regions and the discontinuous bond can include bonding material bonding the individual solid-state transducers to blind ends of corresponding intermediate regions. Associated methods and systems of discontinuous bonds for semiconductor devices are disclosed herein.
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10.发明授权公开(公告)号：US10020432B2
公开(公告)日：2018-07-10
申请号：US14617668
申请日：2015-02-09
IPC分类号： H01L33/52 , H01L33/44 , H01L21/78 , H01L33/62 , H01S5/02 , H01L23/31 , H01L21/56 , H01L33/20 , H01L33/00 , H01L23/00 , H01L21/683 , H01L51/52 , H01L51/56
CPC分类号： H01L33/52 , H01L21/561 , H01L21/6836 , H01L21/78 , H01L23/3185 , H01L24/11 , H01L24/13 , H01L24/97 , H01L33/0095 , H01L33/20 , H01L33/44 , H01L33/62 , H01L51/5237 , H01L51/5253 , H01L51/56 , H01L2221/68327 , H01L2221/68377 , H01L2224/1146 , H01L2224/13022 , H01L2224/13124 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/97 , H01L2251/566 , H01L2924/12041 , H01L2924/12042 , H01L2924/12044 , H01L2933/005 , H01L2933/0066 , H01S5/0201 , Y02P80/30 , H01L2224/11 , H01L2924/00014 , H01L2924/00
摘要： Etched trenches in a bond material for die singulation, and associated systems and methods are disclosed. A method for solid state transducer device singulation in accordance with one embodiment includes forming a plurality of trenches by etching through a metallic bond material forming a bond between a carrier substrate and a plurality of the dies and singulating the carrier substrate along the trenches to separate the dies. In particular embodiments, the trenches extend into the carrier substrate. In further particular embodiments, the dies are at least partially encapsulated in a dielectric material.
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