公开(公告)号：US11784294B2

公开(公告)日：2023-10-10

申请号：US17140349

申请日：2021-01-04

Applicant: Micron Technology, Inc.

Inventor： Vladimir Odnoblyudov ,  Martin F. Schubert

IPC: H01L23/495 ,  H01L33/62 ,  H01L33/00 ,  H01L33/06 ,  H01L33/08 ,  H01L33/32 ,  H01L33/50 ,  H01L33/58 ,  H01L33/38 ,  H01L33/44 ,  H01L33/64

CPC classification number: H01L33/62 ,  H01L33/007 ,  H01L33/0093 ,  H01L33/06 ,  H01L33/08 ,  H01L33/32 ,  H01L33/501 ,  H01L33/504 ,  H01L33/58 ,  H01L33/382 ,  H01L33/387 ,  H01L33/44 ,  H01L33/647 ,  H01L2924/0002 ,  H01L2933/0033 ,  H01L2933/0041 ,  H01L2933/0058 ,  H01L2933/0066 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Vertical solid-state transducers (“SSTs”) having backside contacts are disclosed herein. An SST in accordance with a particular embodiment can include a transducer structure having a first semiconductor material at a first side of the SST, a second semiconductor material at a second side of the SST opposite the first side, and an active region between the first and second semiconductor materials. The SST can further include first and second contacts electrically coupled to the first and second semiconductor materials, respectively. A portion of the first contact can be covered by a dielectric material, and a portion can remain exposed through the dielectric material. A conductive carrier substrate can be disposed on the dielectric material. An isolating via can extend through the conductive carrier substrate to the dielectric material and surround the exposed portion of the first contact to define first and second terminals electrically accessible from the first side.

公开(公告)号：US20230197788A1

公开(公告)日：2023-06-22

申请号：US18168354

申请日：2023-02-13

Applicant: Micron Technology, Inc.

Inventor： Martin F. Schubert ,  Vladimir Odnoblyudov ,  Cem Basceri

IPC: H01L29/10 ,  H01L21/683 ,  H01L29/778 ,  H01L29/06 ,  H01L27/06 ,  H01L29/66 ,  H01L29/423

CPC classification number: H01L29/1029 ,  H01L21/6836 ,  H01L29/7787 ,  H01L29/0657 ,  H01L27/0605 ,  H01L21/6835 ,  H01L29/66462 ,  H01L29/0653 ,  H01L29/42316 ,  H01L29/778 ,  H01L2221/6834 ,  H01L29/2003

Abstract: Methods of manufacturing device assemblies, as well as associated semiconductor assemblies, devices, systems are disclosed herein. In one embodiment, a method of forming a semiconductor device assembly includes forming a semiconductor device assembly that includes a handle substrate, a semiconductor structure having a first side and a second side opposite the first side, and an intermediary material between the semiconductor structure and the handle substrate. The method also includes removing material from the semiconductor structure to form an opening extending from the first side of the semiconductor structure to at least the intermediary material at the second side of the semiconductor structure. The method further includes removing at least a portion of the intermediary material through the opening in the semiconductor structure to undercut the second side of the semiconductor structure.

公开(公告)号：US11469350B2

公开(公告)日：2022-10-11

申请号：US17099276

申请日：2020-11-16

Applicant: Micron Technology, Inc.

Inventor： Vladimir Odnoblyudov ,  Martin F. Schubert

IPC: H01L21/00 ,  H01L33/20 ,  H01L33/08 ,  H01L21/02 ,  H01L33/38 ,  H01L33/00 ,  H01L33/12 ,  H01L33/48 ,  H01L33/62

Abstract: Various embodiments of SST dies and solid state lighting (“SSL”) devices with SST dies, assemblies, and methods of manufacturing are described herein. In one embodiment, a SST die includes a substrate material, a first semiconductor material and a second semiconductor material on the substrate material, an active region between the first semiconductor material and the second semiconductor material, and a support structure defined by the substrate material. In some embodiments, the support structure has an opening that is vertically aligned with the active region.

公开(公告)号：US10804447B2

公开(公告)日：2020-10-13

申请号：US16167172

申请日：2018-10-22

Applicant: Micron Technology, Inc.

Inventor： Martin F. Schubert ,  Kevin Tetz

IPC: H01L33/58 ,  H01L33/50 ,  H01L51/52 ,  H01L33/54 ,  H01L33/00 ,  H01L25/075

Abstract: Solid state lighting (SSL) devices and methods of manufacturing SSL devices are disclosed herein. In one embodiment, an SSL device comprises a support having a surface and a solid state emitter (SSE) at the surface of the support. The SSE can emit a first light propagating along a plurality of first vectors. The SSL device can further include a converter material over at least a portion of the SSE. The converter material can emit a second light propagating along a plurality of second vectors. Additionally, the SSL device can include a lens over the SSE and the converter material. The lens can include a plurality of diffusion features that change the direction of the first light and the second light such that the first and second lights blend together as they exit the lens. The SSL device can emit a substantially uniform color of light.

公开(公告)号：US20200176638A1

公开(公告)日：2020-06-04

申请号：US16784879

申请日：2020-02-07

Applicant: Micron Technology, Inc.

Inventor： Martin F. Schubert ,  Vladimir Odnoblyudov ,  Lifang Xu

IPC: H01L33/38 ,  H01L33/00 ,  H01L33/42 ,  H01L33/40 ,  H01L33/06 ,  H01L33/32 ,  H01L33/50 ,  H01L33/56 ,  H01L33/30

Abstract: Solid-state radiation transducer (SSRT) devices having buried contacts that are at least partially transparent and associated systems and methods are disclosed herein. An SSRT device configured in accordance with a particular embodiment can include a radiation transducer including a first semiconductor material, a second semiconductor material, and an active region between the first semiconductor material and the second semiconductor material. The SSRT device can further include first and second contacts electrically coupled to the first and second semiconductor materials, respectively. The second contact can include a plurality of buried-contact elements electrically coupled to the second semiconductor material. Individual buried-contact elements can have a transparent portion directly adjacent to the second semiconductor material. The second contact can further include a base portion extending between the buried-contact elements, such as a base portion that is least partially planar and reflective.

公开(公告)号：US10553745B2

公开(公告)日：2020-02-04

申请号：US16536528

申请日：2019-08-09

Applicant: Micron Technology, Inc.

Inventor： Martin F. Schubert ,  Vladimir Odnoblyudov

IPC: H01L27/15 ,  H01L33/00 ,  H05B33/08 ,  H01L33/32 ,  H01L33/38 ,  H01L33/06 ,  F21V23/00 ,  F21Y115/10

Abstract: Various embodiments of solid state transducer (“SST”) devices are disclosed. In several embodiments, a light emitter device includes a metal-oxide-semiconductor (MOS) capacitor, an active region operably coupled to the MOS capacitor, and a bulk semiconductor material operably coupled to the active region. The active region can include at least one quantum well configured to store first charge carriers under a first bias. The bulk semiconductor material is arranged to provide second charge carriers to the active region under the second bias such that the active region emits UV light.

公开(公告)号：US20190371962A1

公开(公告)日：2019-12-05

申请号：US16536528

申请日：2019-08-09

Applicant: Micron Technology, Inc.

Inventor： Martin F. Schubert ,  Vladimir Odnoblyudov

IPC: H01L33/00 ,  H05B33/08 ,  H01L27/15 ,  H01L33/06 ,  H01L33/32 ,  H01L33/38

Abstract: Various embodiments of solid state transducer (“SST”) devices are disclosed. In several embodiments, a light emitter device includes a metal-oxide-semiconductor (MOS) capacitor, an active region operably coupled to the MOS capacitor, and a bulk semiconductor material operably coupled to the active region. The active region can include at least one quantum well configured to store first charge carriers under a first bias. The bulk semiconductor material is arranged to provide second charge carriers to the active region under the second bias such that the active region emits UV light.

公开(公告)号：US10468562B2

公开(公告)日：2019-11-05

申请号：US16134813

申请日：2018-09-18

Applicant: Micron Technology, Inc.

Inventor： Martin F. Schubert ,  Vladimir Odnoblyudov

IPC: H01L33/06 ,  H01L33/50 ,  H01L33/00 ,  H01L33/14 ,  H01L33/18 ,  H01L33/32 ,  H01L33/08

Abstract: Wavelength converters, including polarization-enhanced carrier capture converters, for solid state lighting devices, and associated systems and methods are disclosed. A solid state radiative semiconductor structure in accordance with a particular embodiment includes a first region having a first value of a material characteristic and being positioned to receive radiation at a first wavelength. The structure can further include a second region positioned adjacent to the first region to emit radiation at a second wavelength different than the first wavelength. The second region has a second value of the material characteristic that is different than the first value, with the first and second values of the characteristic forming a potential gradient to drive electrons, holes, or both electrons and holes in the radiative structure from the first region to the second region. In a further particular embodiment, the material characteristic includes material polarization.

公开(公告)号：US10418349B2

公开(公告)日：2019-09-17

申请号：US16046767

申请日：2018-07-26

Applicant: Micron Technology, Inc.

Inventor： Martin F. Schubert

IPC: H01L25/075 ,  H01L33/62 ,  H01L33/38 ,  H01L33/08

Abstract: Solid-state transducer (“SST”) dies and SST arrays having electrical cross-connections are disclosed herein. An array of SST dies in accordance with a particular embodiment can include a first terminal, a second terminal and a plurality of SST dies coupled between the first and second terminals with at least a pair of the SST dies being coupled in parallel. The plurality of SST dies can individually include a plurality of junctions coupled in series with an interconnection between each individual junction. Additionally, the individual SST dies can have a cross-connection contact coupled to the interconnection. In one embodiment, the array can further include a cross-connection between the cross-connection contacts on the pair of the SST dies.

公开(公告)号：US20190237621A1

公开(公告)日：2019-08-01

申请号：US16377897

申请日：2019-04-08

Applicant: Micron Technology, Inc.

Inventor： Vladimir Odnoblyudov ,  Martin F. Schubert

IPC: H01L33/20 ,  H01L33/00 ,  H01L33/48 ,  H01L33/62 ,  H01L33/12 ,  H01L21/02 ,  H01L33/38 ,  H01L33/08

CPC classification number: H01L33/20 ,  H01L21/02104 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/08 ,  H01L33/12 ,  H01L33/38 ,  H01L33/483 ,  H01L33/62 ,  H01L2933/0016

Abstract: Various embodiments of SST dies and solid state lighting (“SSL”) devices with SST dies, assemblies, and methods of manufacturing are described herein. In one embodiment, a SST die includes a substrate material, a first semiconductor material and a second semiconductor material on the substrate material, an active region between the first semiconductor material and the second semiconductor material, and a support structure defined by the substrate material. In some embodiments, the support structure has an opening that is vertically aligned with the active region.