ELECTROPHOTOGRAPHIC IMAGE FORMING APPARATUS
    41.
    发明申请
    ELECTROPHOTOGRAPHIC IMAGE FORMING APPARATUS 有权
    电子图像形成装置

    公开(公告)号:US20110115871A1

    公开(公告)日:2011-05-19

    申请号:US12909447

    申请日:2010-10-21

    Inventor: Mitsuhiro Ikuta

    CPC classification number: B41J2/45

    Abstract: Provided is an electrophotographic image forming apparatus using a novel array light source to replace the LED array light sources, which enables provision of a reduced image formation spot diameter on a photoreceptor as well as a reduced spot pitch. An electrophotographic image forming apparatus according to the present invention includes an electrophotographic image forming apparatus including a light source, and an electrophotographic photoreceptor to be exposed by the light source, the light source for exposing the electrophotographic photoreceptor including: a plurality of surface plasmon waveguides for forming a potential distribution on the electrophotographic photoreceptor using near-field light generated at tips thereof, the surface plasmon waveguides being arrayed: and an excitation mechanism for exciting a surface plasmon on each of the plurality of surface plasmon waveguides.

    Abstract translation: 提供一种电子照相图像形成装置,其使用新颖的阵列光源来代替LED阵列光源,其能够在感光体上提供缩小的图像形成光斑直径以及减小的光点间距。 根据本发明的电子照相图像形成装置包括电子照相图像形成装置,其包括光源和由光源曝光的电子照相感光体,用于曝光电子照相感光体的光源包括:多个表面等离子体波导,用于 使用在其顶端产生的近场光在电子照相感光体上形成电势分布,排列表面等离子体波导;以及激励机构,用于激发多个表面等离子体波导中的每一个上的表面等离子体激元。

    Surface emitting laser
    42.
    发明授权
    Surface emitting laser 有权
    表面发射激光

    公开(公告)号:US07940826B2

    公开(公告)日:2011-05-10

    申请号:US12377934

    申请日:2008-10-08

    Inventor: Mitsuhiro Ikuta

    CPC classification number: H01S5/18 H01S5/105 H01S5/187 H01S5/2004 H01S5/2027

    Abstract: When configuring a surface emitting laser by a semiconductor material not capable of largely extracting a refractive-index difference, the surface emitting laser using a photonic crystal capable of forming a waveguide is provided.

    Abstract translation: 当通过不能很大程度地提取折射率差的半导体材料配置表面发射激光器时,提供了使用能够形成波导的光子晶体的表面发射激光器。

    SURFACE EMITTING LASER MANUFACTURING METHOD, SURFACE EMITTING LASER ARRAY MANUFACTURING METHOD, SURFACE EMITTING LASER, SURFACE EMITTING LASER ARRAY, AND OPTICAL APPARATUS INCLUDING SURFACE EMITTING LASER ARRAY
    43.
    发明申请
    SURFACE EMITTING LASER MANUFACTURING METHOD, SURFACE EMITTING LASER ARRAY MANUFACTURING METHOD, SURFACE EMITTING LASER, SURFACE EMITTING LASER ARRAY, AND OPTICAL APPARATUS INCLUDING SURFACE EMITTING LASER ARRAY 有权
    表面发射激光制造方法,表面发射激光阵列制造方法,表面发射激光,表面发射激光阵列和包括表面发射激光阵列的光学装置

    公开(公告)号:US20110076058A1

    公开(公告)日:2011-03-31

    申请号:US12958987

    申请日:2010-12-02

    Abstract: Provided is a surface emitting laser manufacturing method, etc., which reduces process damage occurring to a surface relief structure, enabling stable provision of a single transverse mode characteristic. Provided is a method including a surface relief structure for controlling a reflectance in a light emitting portion of an upper mirror, the surface relief structure including a stepped structure, includes: forming a resist pattern including a pattern for forming a mesa structure and a pattern for forming a stepped structure, on or above the upper mirror, and performing first-phase etching for etching the surface layer of the upper mirror to determine the horizontal position of the stepped structure; forming a current confining structure after the performing first-phase etching; and performing second-phase etching for further etching the area that the first-phase etching has been performed, to determine the depth position of the stepped structure, after the forming a current confining structure.

    Abstract translation: 本发明提供了一种表面发射激光制造方法等,其减少了对表面起伏结构发生的工艺损伤,能够稳定地提供单一横模特性。 提供了一种包括用于控制上反射镜的发光部分中的反射率的表面浮雕结构的方法,所述表面浮雕结构包括阶梯结构,包括:形成包括用于形成台面结构的图案的抗蚀剂图案和用于形成台阶结构的图案 在上反射镜上或上方形成台阶结构,并执行用于蚀刻上镜的表面层的第一相蚀刻以确定阶梯结构的水平位置; 在执行第一相蚀刻之后形成电流限制结构; 并且在形成电流限制结构之后,执行第二相蚀刻以进一步蚀刻已经执行第一相蚀刻的区域,以确定阶梯结构的深度位置。

    Surface emitting laser
    44.
    发明授权
    Surface emitting laser 有权
    表面发射激光

    公开(公告)号:US07869483B2

    公开(公告)日:2011-01-11

    申请号:US12425745

    申请日:2009-04-17

    CPC classification number: H01S5/187 H01S5/105 H01S5/3211 H01S5/32341

    Abstract: A surface emitting laser which oscillates at a wavelength λ of a blue band, including a photonic crystal layer including a photonic crystal structure, an active layer provided on one surface of the photonic crystal layer, and an electrode provided on the other surface of the photonic crystal layer for injecting electric current into the active layer. The photonic crystal structure has a thickness of 100 nm or more. A laser beam is emitted toward a direction opposite to a side of the photonic crystal layer on which the electrode is provided.

    Abstract translation: 一种表面发射激光器,其以包括光子晶体结构的光子晶体层,设置在光子晶体层的一个表面上的有源层和设置在光子晶体的另一个表面上的电极在蓝色波段的波长λ处振荡 用于将电流注入有源层的晶体层。 光子晶体结构的厚度为100nm以上。 激光束朝向与设置有电极的光子晶体层的一侧相反的方向发射。

    PROCESS FOR PRODUCING SURFACE EMITTING LASER, PROCESS FOR PRODUCING SURFACE EMITTING LASER ARRAY, AND OPTICAL APPARATUS INCLUDING SURFACE EMITTING LASER ARRAY PRODUCED BY THE PROCESS
    45.
    发明申请
    PROCESS FOR PRODUCING SURFACE EMITTING LASER, PROCESS FOR PRODUCING SURFACE EMITTING LASER ARRAY, AND OPTICAL APPARATUS INCLUDING SURFACE EMITTING LASER ARRAY PRODUCED BY THE PROCESS 有权
    用于生产表面发射激光的工艺,用于生产表面发射激光阵列的工艺,以及包括由工艺生产的表面发射激光阵列的光学装置

    公开(公告)号:US20100029030A1

    公开(公告)日:2010-02-04

    申请号:US12509551

    申请日:2009-07-27

    Abstract: Provided is a process for producing a surface emitting laser including a surface relief structure provided on laminated semiconductor layers, including the steps of transferring, to a first dielectric film, a first pattern for defining a mesa structure and a second pattern for defining the surface relief structure in the same process; and forming a second dielectric film on the first dielectric film and a surface of the laminated semiconductor layers to which the first pattern and the second pattern have been transferred. Accordingly, a center position of the surface relief structure can be aligned with a center position of a current confinement structure at high precision.

    Abstract translation: 提供一种制造表面发射激光器的方法,该表面发射激光器包括设置在层叠半导体层上的表面浮雕结构,包括以下步骤:向第一电介质膜转移用于限定台面结构的第一图案和用于限定表面浮雕的第二图案 结构在同一过程中; 以及在所述第一电介质膜上形成第二电介质膜和在所述第一图案和所述第二图案转印到所述层叠半导体层的表面上。 因此,表面浮雕结构的中心位置可以高精度地与电流限制结构的中心位置对准。

    Surface-emitting laser and method for producing the same
    46.
    发明授权
    Surface-emitting laser and method for producing the same 有权
    表面发射激光器及其制造方法

    公开(公告)号:US07499481B2

    公开(公告)日:2009-03-03

    申请号:US11937772

    申请日:2007-11-09

    Inventor: Mitsuhiro Ikuta

    Abstract: A surface-emitting laser includes reflectors. One of the reflectors has multiple layers including one or more high-refractive-index layers and one or more low-refractive-index layers which are alternately stacked. At least one of the low-refractive-index layers includes a first region containing aluminum oxide and a second region surrounding the first region. A boundary between the first and second regions is positioned within a region where laser light is emitted. The reflectance of the multilayer reflector is higher in a portion including the first region than in a portion including the second region.

    Abstract translation: 表面发射激光器包括反射器。 一个反射器具有多个层,包括一个或多个高折射率层和一个或多个交替层叠的低折射率层。 低折射率层中的至少一个包括含有氧化铝的第一区域和围绕第一区域的第二区域。 第一和第二区域之间的边界位于发射激光的区域内。 在包括第一区域的部分中,多层反射器的反射率比包括第二区域的部分的反射率高。

    METHOD FOR MANUFACTURING SURFACE-EMITTING LASER
    47.
    发明申请
    METHOD FOR MANUFACTURING SURFACE-EMITTING LASER 有权
    制造表面发射激光的方法

    公开(公告)号:US20090035884A1

    公开(公告)日:2009-02-05

    申请号:US12166378

    申请日:2008-07-02

    Inventor: Mitsuhiro Ikuta

    Abstract: Provided is a method for manufacturing a surface-emitting laser capable of forming a photonic crystal structure inside a semiconductor highly accurately and easily without direct bonding. It is a method by laminating on a substrate a plurality of semiconductor layers including an active layer and a semiconductor layer having a photonic crystal structure formed therein, the method including the steps of forming a second semiconductor layer on a first semiconductor layer to form the photonic crystal structure, forming a plurality of microholes in the second semiconductor layer, forming a low refractive index portion in a part of the first semiconductor layer via the plurality of microholes thereby to provide the first semiconductor layer with the photonic crystal structure having a one-dimensional or two-dimensional refractive index distribution in a direction parallel to the substrate, and forming a third semiconductor layer by crystal regrowth from a surface of the second semiconductor layer.

    Abstract translation: 提供一种能够高精度,容易地形成半导体内的光子晶体结构的表面发射激光的制造方法,而无需直接接合。 这是通过在衬底上层叠多个半导体层的方法,所述多个半导体层包括有源层和在其中形成的光子晶体结构的半导体层,该方法包括以下步骤:在第一半导体层上形成第二半导体层以形成光子 晶体结构,在第二半导体层中形成多个微孔,经由多个微孔在第一半导体层的一部分中形成低折射率部分,从而为第一半导体层提供具有一维的光子晶体结构 或平行于基板的方向上的二维折射率分布,以及从第二半导体层的表面通过晶体再生长形成第三半导体层。

    Surface emitting laser, surface emitting laser array, and optical apparatus having surface emitting laser array
    49.
    发明授权
    Surface emitting laser, surface emitting laser array, and optical apparatus having surface emitting laser array 有权
    表面发射激光器,表面发射激光器阵列和具有表面发射激光器阵列的光学装置

    公开(公告)号:US09042421B2

    公开(公告)日:2015-05-26

    申请号:US13273539

    申请日:2011-10-14

    Inventor: Mitsuhiro Ikuta

    CPC classification number: H01S5/18391 B82Y20/00 H01S5/18311 H01S5/34326

    Abstract: There is provided a surface emitting laser allowing a direction of a far-field pattern (FFP) centroid to be inclined from a normal direction of a substrate providing the surface emitting laser, comprising: a substrate; a lower reflecting mirror, an active layer, an upper reflecting mirror stacked on the substrate; and a surface relief structure located in an upper portion of a light emitting surface of the upper reflecting mirror, the surface relief structure being made of a material allowing at least some beams emitted from the surface emitting laser to be transmitted therethrough, a plurality of regions having a predetermined optical thickness in a normal direction of the substrate being formed in contact with other region in an in-plane direction of the substrate, and a distribution of the optical thickness in the in-plane direction of the substrate is asymmetric to a central axis of the light emitting regions.

    Abstract translation: 提供了允许远场图案(FFP)重心的方向从提供表面发射激光器的基板的法线方向倾斜的表面发射激光器,包括:基板; 下反射镜,有源层,叠层在基板上的上反射镜; 以及表面浮雕结构,其位于上反射镜的发光表面的上部,所述表面浮雕结构由允许从表面发射激光器发射的至少一些光束透射的材料制成,多个区域 在基板的法线方向上具有与衬底的面内方向上的其他区域接触的预定光学厚度,并且基板的面内方向上的光学厚度的分布不对称于中心 发光区域的轴线。

    Surface emitting laser, method for manufacturing surface emitting laser, and image forming apparatus
    50.
    发明授权
    Surface emitting laser, method for manufacturing surface emitting laser, and image forming apparatus 有权
    表面发射激光器,表面发射激光器的制造方法和图像形成装置

    公开(公告)号:US08265115B2

    公开(公告)日:2012-09-11

    申请号:US12837272

    申请日:2010-07-15

    Inventor: Mitsuhiro Ikuta

    Abstract: A surface emitting laser includes a lower multilayer mirror and an upper multilayer mirror which are provided on a substrate. A first oxidizable layer is partially oxidized to form a first current confinement layer including a first conductive region and a first insulating region. A second oxidizable layer is partially oxidized to form a second current confinement layer including a second conductive region and a second insulating region, a boundary between the first conductive region and the first insulating region being disposed inside the second current confinement layer in an in-plane direction of the substrate. The first oxidizable layer and the second oxidizable layer or layers adjacent to the respective oxidizable layers are adjusted so that when both layers are oxidized under the same oxidizing conditions, the oxidation rate of the first oxidizable layer is lower than that of the second oxidizable layer.

    Abstract translation: 表面发射激光器包括设置在基板上的下多层反射镜和上多层反射镜。 第一可氧化层被部分氧化以形成包括第一导电区域和第一绝缘区域的第一电流限制层。 第二可氧化层被部分氧化以形成包括第二导电区域和第二绝缘区域的第二电流限制层,第一导电区域和第一绝缘区域之间的边界被布置在第二电流限制层内部的平面内 基板的方向。 调节与各可氧化层相邻的第一可氧化层和第二可氧化层,使得当在相同的氧化条件下两层被氧化时,第一可氧化层的氧化速率低于第二可氧化层的氧化速率。

Patent Agency Ranking