Abstract:
Provided is an electrophotographic image forming apparatus using a novel array light source to replace the LED array light sources, which enables provision of a reduced image formation spot diameter on a photoreceptor as well as a reduced spot pitch. An electrophotographic image forming apparatus according to the present invention includes an electrophotographic image forming apparatus including a light source, and an electrophotographic photoreceptor to be exposed by the light source, the light source for exposing the electrophotographic photoreceptor including: a plurality of surface plasmon waveguides for forming a potential distribution on the electrophotographic photoreceptor using near-field light generated at tips thereof, the surface plasmon waveguides being arrayed: and an excitation mechanism for exciting a surface plasmon on each of the plurality of surface plasmon waveguides.
Abstract:
When configuring a surface emitting laser by a semiconductor material not capable of largely extracting a refractive-index difference, the surface emitting laser using a photonic crystal capable of forming a waveguide is provided.
Abstract:
Provided is a surface emitting laser manufacturing method, etc., which reduces process damage occurring to a surface relief structure, enabling stable provision of a single transverse mode characteristic. Provided is a method including a surface relief structure for controlling a reflectance in a light emitting portion of an upper mirror, the surface relief structure including a stepped structure, includes: forming a resist pattern including a pattern for forming a mesa structure and a pattern for forming a stepped structure, on or above the upper mirror, and performing first-phase etching for etching the surface layer of the upper mirror to determine the horizontal position of the stepped structure; forming a current confining structure after the performing first-phase etching; and performing second-phase etching for further etching the area that the first-phase etching has been performed, to determine the depth position of the stepped structure, after the forming a current confining structure.
Abstract:
A surface emitting laser which oscillates at a wavelength λ of a blue band, including a photonic crystal layer including a photonic crystal structure, an active layer provided on one surface of the photonic crystal layer, and an electrode provided on the other surface of the photonic crystal layer for injecting electric current into the active layer. The photonic crystal structure has a thickness of 100 nm or more. A laser beam is emitted toward a direction opposite to a side of the photonic crystal layer on which the electrode is provided.
Abstract:
Provided is a process for producing a surface emitting laser including a surface relief structure provided on laminated semiconductor layers, including the steps of transferring, to a first dielectric film, a first pattern for defining a mesa structure and a second pattern for defining the surface relief structure in the same process; and forming a second dielectric film on the first dielectric film and a surface of the laminated semiconductor layers to which the first pattern and the second pattern have been transferred. Accordingly, a center position of the surface relief structure can be aligned with a center position of a current confinement structure at high precision.
Abstract:
A surface-emitting laser includes reflectors. One of the reflectors has multiple layers including one or more high-refractive-index layers and one or more low-refractive-index layers which are alternately stacked. At least one of the low-refractive-index layers includes a first region containing aluminum oxide and a second region surrounding the first region. A boundary between the first and second regions is positioned within a region where laser light is emitted. The reflectance of the multilayer reflector is higher in a portion including the first region than in a portion including the second region.
Abstract:
Provided is a method for manufacturing a surface-emitting laser capable of forming a photonic crystal structure inside a semiconductor highly accurately and easily without direct bonding. It is a method by laminating on a substrate a plurality of semiconductor layers including an active layer and a semiconductor layer having a photonic crystal structure formed therein, the method including the steps of forming a second semiconductor layer on a first semiconductor layer to form the photonic crystal structure, forming a plurality of microholes in the second semiconductor layer, forming a low refractive index portion in a part of the first semiconductor layer via the plurality of microholes thereby to provide the first semiconductor layer with the photonic crystal structure having a one-dimensional or two-dimensional refractive index distribution in a direction parallel to the substrate, and forming a third semiconductor layer by crystal regrowth from a surface of the second semiconductor layer.
Abstract:
Exemplary method and system for providing a diffractive configuration in an optical arrangement are provided. For example, a material can be provided with at least one patterned surface having a very high aspect ratio. The material can be connected with at least one portion of a waveguide arrangement using a pre-polymer adhesive composition. Further, the pre-polymer adhesive composition can be caused to polymerize so as to form the diffractive configuration which at least approximately replicates a structure or at least one feature of the patterned surface.
Abstract:
There is provided a surface emitting laser allowing a direction of a far-field pattern (FFP) centroid to be inclined from a normal direction of a substrate providing the surface emitting laser, comprising: a substrate; a lower reflecting mirror, an active layer, an upper reflecting mirror stacked on the substrate; and a surface relief structure located in an upper portion of a light emitting surface of the upper reflecting mirror, the surface relief structure being made of a material allowing at least some beams emitted from the surface emitting laser to be transmitted therethrough, a plurality of regions having a predetermined optical thickness in a normal direction of the substrate being formed in contact with other region in an in-plane direction of the substrate, and a distribution of the optical thickness in the in-plane direction of the substrate is asymmetric to a central axis of the light emitting regions.
Abstract:
A surface emitting laser includes a lower multilayer mirror and an upper multilayer mirror which are provided on a substrate. A first oxidizable layer is partially oxidized to form a first current confinement layer including a first conductive region and a first insulating region. A second oxidizable layer is partially oxidized to form a second current confinement layer including a second conductive region and a second insulating region, a boundary between the first conductive region and the first insulating region being disposed inside the second current confinement layer in an in-plane direction of the substrate. The first oxidizable layer and the second oxidizable layer or layers adjacent to the respective oxidizable layers are adjusted so that when both layers are oxidized under the same oxidizing conditions, the oxidation rate of the first oxidizable layer is lower than that of the second oxidizable layer.