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公开(公告)号：US20070243797A1
公开(公告)日：2007-10-18
申请号：US11785190
申请日：2007-04-16
CPC分类号： B24B37/042 , B24B49/045 , H01L22/26
摘要： A polishing method for polishing a workpiece using the chemical polishing process endpoint detecting technology is applicable to actual polishing processes and polishing apparatus. The polishing method including pressing the workpiece against a polishing surface of a polishing table, moving the workpiece and the polishing surface relatively to each other to polish the workpiece, and disposing a gas suction pipe having a gas inlet port, directly above the polishing surface, supplying an atmospheric gas from above the polishing surface through the gas inlet port to a gas detector via the gas suction pipe, and monitoring a particular gas contained in the atmospheric gas with the gas detector while the workpiece is being polished.
摘要翻译： 使用化学抛光处理终点检测技术对工件进行抛光的抛光方法适用于实际的抛光工艺和抛光装置。 抛光方法包括将工件压靠在抛光台的研磨面上，相对移动工件和抛光表面以抛光工件，并且在抛光表面正上方设置具有气体入口的气体吸入管， 通过气体吸入管将来自抛光表面上方的大气气体通过气体入口供给到气体检测器，并且在抛光工件时，利用气体检测器监测包含在气体中的特定气体。
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公开(公告)号：US20060003521A1
公开(公告)日：2006-01-05
申请号：US11220570
申请日：2005-09-08
申请人： Akira Fukunaga , Manabu Tsujimura
发明人： Akira Fukunaga , Manabu Tsujimura
IPC分类号： H01L21/8238
CPC分类号： H01L21/02074 , H01L21/02087 , H01L21/0209 , H01L21/288 , H01L21/7684 , H01L21/76843 , H01L21/76849 , H01L21/76877 , H01L21/76879
摘要： A damaged layer which is necessarily produced on the exposed surface of an interconnect by flattening of a surface of a substrate for forming interconnect according to a damascene process is restored, making it possible to manufacture semiconductor devices with a high yield. A semiconductor device is manufactured by preparing a substrate having an interconnect recess formed in ah interlevel dielectric, depositing an interconnect material on the surface of the substrate to embed the interconnect material in the interconnect recess, removing the interconnect material excessively formed on the surface of the substrate to flatten the surface of the substrate, thereby forming an interconnect of the interconnect material, and restoring a damaged layer formed on the exposed surface of the interconnect.
摘要翻译： 通过根据镶嵌工艺对用于形成互连的基板的表面进行平坦化而必须在互连的暴露表面上产生的受损层被恢复，使得可以以高产率制造半导体器件。 通过制备具有形成在层间电介质中的互连凹槽的衬底来制造半导体器件，在衬底的表面上沉积互连材料以将互连材料嵌入到互连凹槽中，从而去除在 基板，使基板的表面变平，由此形成互连材料的互连，并恢复形成在互连的暴露表面上的损伤层。
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公开(公告)号：US20050191858A1
公开(公告)日：2005-09-01
申请号：US11064511
申请日：2005-02-24
IPC分类号： B24B37/04 , B24B49/12 , B24B49/16 , H01L21/00 , H01L21/321 , H01L21/8242 , B24B51/00 , H01L21/461
CPC分类号： H01L21/67173 , B24B37/013 , B24B49/12 , B24B49/16 , H01L21/3212 , H01L21/6708 , H01L21/67219
摘要： A substrate processing apparatus can process a substrate having a metal film formed thereon. The substrate processing apparatus has a process unit configured to remove a native oxide of a metal film formed on a surface of a substrate. The substrate processing apparatus also has a planarization unit configured to planarize the metal film of the substrate. The process unit may comprise a wet process unit configured to dissolve the native oxide of the metal film in a chemical liquid or a dry process unit configured to reduce or etch the native oxide of the metal film with a gas.
摘要翻译： 基板处理装置可以处理其上形成有金属膜的基板。 基板处理装置具有处理单元，其被配置为去除在基板的表面上形成的金属膜的自然氧化物。 基板处理装置还具有将基板的金属膜平坦化的平坦化单元。 处理单元可以包括湿处理单元，其被配置为将金属膜的天然氧化物溶解在化学液体或干燥处理单元中，所述干燥处理单元被配置为用气体还原或蚀刻金属膜的天然氧化物。
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公开(公告)号：US06875335B2
公开(公告)日：2005-04-05
申请号：US10449515
申请日：2003-06-02
申请人： Yuzo Mori , Mitsuhiko Shirakashi , Takayuki Saito , Yasushi Toma , Akira Fukunaga , Itsuki Kobata
发明人： Yuzo Mori , Mitsuhiko Shirakashi , Takayuki Saito , Yasushi Toma , Akira Fukunaga , Itsuki Kobata
摘要： An anode as a workpiece, and a cathode opposed to the anode with a predetermined spacing are placed in ultrapure water. A catalytic material promoting dissociation of the ultrapure water and having water permeability is disposed between the workpiece and the cathode. A flow of the ultrapure water is formed inside the catalytic material, with a voltage being applied between the workpiece and the cathode, to decompose water molecules in the ultrapure water into hydrogen ions and hydroxide ions, and supply the resulting hydroxide ions to a surface of the workpiece, thereby performing removal processing of or oxide film formation on the workpiece through a chemical dissolution reaction or an oxidation reaction mediated by the hydroxide ions. Thus, clean processing can be performed by use of hydroxide ions in ultrapure water, with no impurities left behind on the processed surface of the workpiece.
摘要翻译： 将作为工件的阳极和与阳极相对的具有预定间隔的阴极置于超纯水中。 在工件和阴极之间设置促进超纯水的离解并具有透水性的催化材料。 在催化材料内部形成超纯水流，在工件和阴极之间施加电压，将超纯水中的水分子分解为氢离子和氢氧根离子，并将得到的氢氧根离子供给到 从而通过化学溶解反应或由氢氧根离子介导的氧化反应来进行工件的去除处理或氧化膜形成。 因此，可以通过在超纯水中使用氢氧根离子进行清洁处理，在工件的加工表面上不会留下杂质。
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公开(公告)号：US06743395B2
公开(公告)日：2004-06-01
申请号：US09811581
申请日：2001-03-20
IPC分类号： C22C3200
CPC分类号： H01L21/67167 , B01J13/0043 , B22F1/0018 , B22F1/0059 , B22F1/0062 , B22F9/24 , B22F2998/00 , B82Y30/00 , H01L21/02074 , H01L21/02087 , H01L21/0209 , H01L21/288 , H01L21/3212 , H01L21/67034 , H01L21/67051 , H01L21/6715 , H01L21/67161 , H01L21/67173 , H01L21/67219 , H01L21/76877 , H05K3/102 , Y10T428/2998
摘要： The present invention relates to composite metallic ultrafine particles which have excellent dispersion stability and can be produced on an industrial scale, and a process for producing the same, and a method and an apparatus for forming an interconnection with use of the same. A surface of a core metal produced from a metallic salt, a metallic oxide, or a metallic hydroxide and having a particle diameter of 1 to 100 nm is covered with an organic compound including a functional group having chemisorption capability onto the surface of the core metal.
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公开(公告)号：US06740242B2
公开(公告)日：2004-05-25
申请号：US09994755
申请日：2001-11-28
申请人： Akira Fukunaga , Hiroshi Nagasawa
发明人： Akira Fukunaga , Hiroshi Nagasawa
IPC分类号： B01D1508
CPC分类号： C25D21/14 , C25D7/123 , C25D17/001 , C25D21/12 , G01N30/461 , B01D15/34 , B01D15/327
摘要： A plating apparatus comprises a plating unit having a plating bath for holding a plating liquid therein, and a planting monitoring unit having a liquid chromatography device and an arithmetical unit. The liquid chromatography device serves to separate and quantify an additive in a sample of the planting liquid. The arithmetical unit serves to compare a quantified value of the additive with a given concentration predetermined for the additive and to produce an output signal representing the compare result. The plating apparatus further comprises an additive replenishing unit for adding a solution including the additive from an additive tank to the plating liquid in the planting bath based on the output signal from the arithmetical unit in the plating liquid monitoring unit.
摘要翻译： 电镀装置包括具有用于保持电镀液的电镀液的电镀单元，以及具有液相色谱装置和算术单元的种植监视单元。 液相色谱装置用于分离和定量种植液样品中的添加剂。 算术单元用于将添加剂的量化值与为添加剂预定的给定浓度进行比较，并产生表示比较结果的输出信号。 电镀装置还包括添加剂补充单元，其基于来自电镀液监测单元中的算术单元的输出信号，将来自添加剂槽的添加剂的溶液与种植槽中的电镀液相加。
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公开(公告)号：US06315858B1
公开(公告)日：2001-11-13
申请号：US09271864
申请日：1999-03-18
IPC分类号： C23F102
CPC分类号： C23F3/00 , H01L21/30625
摘要： A polishing apparatus can replace or be used in association with a conventional chemical mechanical polishing method to produce a high quality flat surface in a more efficient manner. The polishing apparatus utilizes a nozzle device, disposed to face a work surface of a workpiece, for performing gas polishing by ejecting a reactive polishing gas to the work surface. The nozzle device comprises a nozzle assembly having nozzles that has a plurality of differing diameters. A nozzle selection device is provided for selecting an operative nozzle having a desired diameter from the nozzle assembly and ejecting the polishing gas through a selected nozzle.
摘要翻译： 抛光装置可以替代或者与传统的化学机械抛光方法相关联地使用，以更有效的方式产生高质量的平坦表面。 抛光装置利用喷嘴装置，其设置成面对工件的工作表面，用于通过将反应性抛光气体喷射到工作表面进行气体抛光。 喷嘴装置包括具有多个不同直径的喷嘴的喷嘴组件。 提供一种喷嘴选择装置，用于从喷嘴组件中选择具有所需直径的工作喷嘴，并通过所选择的喷嘴喷射抛光气体。
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公开(公告)号：US6136213A
公开(公告)日：2000-10-24
申请号：US30833
申请日：1998-02-26
申请人： Syuhei Shinozuka , Kaori Miyoshi , Akira Fukunaga
发明人： Syuhei Shinozuka , Kaori Miyoshi , Akira Fukunaga
IPC分类号： B05B1/00 , C23F1/00 , C23F1/08 , C23F4/00 , H01L21/00 , H01L21/302 , H01L21/3065 , C23F1/02 , C03C25/68 , C23F1/24
CPC分类号： H01L21/67069 , H01L21/3065
摘要： Etching of an object is achieved by jetting etching gas onto the object from a gas jetting nozzle. A gas jetting pipe for jetting the etching gas and a discharge pipe for discharging the jetted gas are designed as a coaxial dual pipe structure. The etching gas is jetted from the gas jetting pipe toward the object and, at the same time, excess etching gas is discharged through the discharge pipe.
摘要翻译： 通过从气体喷射喷嘴将蚀刻气体喷射到物体上来实现物体的蚀刻。 用于喷射蚀刻气体的气体喷射管和用于排出喷射气体的排出管被设计为同轴双管结构。 从气体喷射管朝向物体喷射蚀刻气体，同时通过排出管排出多余的蚀刻气体。
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公开(公告)号：US4861578A
公开(公告)日：1989-08-29
申请号：US235574
申请日：1988-07-26
申请人： Akira Fukunaga , Yoichi Mori
发明人： Akira Fukunaga , Yoichi Mori
CPC分类号： B01D53/68
摘要： A method of treating a waste gas containing at least boron trichloride and chlorine comprises first treating the waste gas with a treating agent containing a magnesium compound by a dry process and then treating the waste gas with a treating agent containing a calcium compound by a dry process. Thus, it is possible to remove efficiently a chloride and chlorine containing gas from waste gas discharged from a dry etching process or other manufacturing process in the semiconductor industry. In addition, it is possible to reduce the amount of treating agent used, lengthen the treating agent replacing cycle, and facilitate the maintenance of the system.
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公开(公告)号：US4826805A
公开(公告)日：1989-05-02
申请号：US105239
申请日：1987-10-07
CPC分类号： B01D53/68
摘要： An absorber that is capable of efficient absorption of SiF.sub.4 and/or BCl.sub.3 present in gases that are discharged from semiconductor fabrication plants, ceramic producing plants and other plants is disclosed. The absorber contains an alkali agent, water and a superabsorbent as effective components. This absorber, when used to treat an effluent gas, attains as high reaction rate as in the conventional wet process and can be handled as easily as in the dry process.
摘要翻译： 公开了能够有效吸收从半导体制造厂，陶瓷生产厂和其它工厂排出的气体中存在的SiF 4和/或BCl 3的吸收体。 吸收剂含有碱剂，水和超吸收剂作为有效成分。 该吸收剂当用于处理废气时，达到与常规湿式方法一样高的反应速率，并可像干法那样容易地处理。
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