摘要:
The present invention relates to a novel antireflecting coating composition, where the composition comprises a polymer, thermal acid generator and a solvent composition. The invention further comprises processes for the use of such a composition in photolithography. The composition strongly absorbs radiation ranging from about 130 nm (nanometer) to about 250 nm.
摘要:
The invention relates to a photoimageable antireflective coating composition capable of forming a pattern by development in an aqueous alkaline solution, comprising, (i) a polymer A soluble in a coating solvent and comprises a chromophore, a crosslinking moiety, and optionally a cleavable group which under acid or thermal conditions produces a functionality which aids in the solubility of the polymer in an aqueous alkaline solution and; (ii) at least one photoacid generator; (iii) a crosslinking agent; (iv) optionally, a thermal acid generator; (v) a polymer B which is soluble in an aqueous alkaline solution prior to development, where polymer B is non-miscible with polymer A and soluble in the coating solvent, and; (vi) a coating solvent composition, and (vii) optionally, a quencher. The invention also relates to a process for imaging the antireflective coating.
摘要:
The present invention provides a composition for forming a bottom anti-reflective coating, and also provides a photoresist pattern formation method employing that composition. The composition gives a bottom anti-reflective coating used in a lithographic process for manufacturing semiconductor devices, and the coating can be developed with a developing solution for photoresist. The composition contains a solvent, a polymer having a condensed polycyclic aromatic group, and a compound having a maleimide derivative or a maleic anhydride derivative. The composition may further contain a photo acid generator or a crosslinking agent.
摘要:
The present invention relates to a novel chemically amplified photoresist, which is sensitive to wavelengths between 300 nm and 100 nm, and comprises a) a novel polymer comprising a sulfone group pendant from a polymer backbone that is insoluble in an aqueous alkaline solution and comprises at least one acidic moiety protected with acid labile group, and b) a compound capable of producing an acid upon irradiation. The invention also relates to a process of imaging the novel positive photoresist composition.
摘要:
A composition for an anti-reflective coating or a radiation absorbing coating which can form an anti-reflective coating or a radiation absorbing coating having high absorption to exposed radiation in the range of 100 to 450 nm, no diffusion of photo-generated acid to anti-reflective coating and so on, no intermixing of resist and anti-reflective coating layer, good shelf-life stability, and good step coverage and novel compounds and polymers being preferably used in the composition are disclosed. The composition contains an acrylic or methacrylic compound or polymer with an isocyanate or thioisocyanate group bonded through an alkylene group to a side chain thereof or with an amino or hydroxyl group-containing organic chromophore which absorbs radiation in the range of 100 to 450 nm wavelength and is bonded, for example, through an alkylene group to the isocyanate or thioisocyanate group. Resist patters with high resolution are formed on a substrate. A composition for an anti-reflective coating or a radiation absorbing coating are applied on the substrate and baked to form an anti-reflective coating or a radiation absorbing coating layer. Then, a chemically amplified resist is coated thereon and after patternwize exposure, developed. During baking of the anti-reflective coating or radiation absorbing coating, hardening or curing of the coating takes place by the presence of the isocyanate or thioisocyanate group. On the other hand, the exposed radiation having wavelength in the range of 100 to 450 nm is absorbed by organic chromophore.
摘要:
The present invention relates to a novel photoresist composition sensitive in the deep ultraviolet region, where the photoresist performance is not adversely impacted by basic contaminants in the processing environment of the photoresist. The novel photoresist comprises a polymer, a photoactive compound, a basic compound that is a sulfonium or iodonium compound that is essentially nonabsorbing at the exposure wavelength of the photoresist, and a solvent composition. The invention further relates to a process for imaging such a photoresist in the deep ultraviolet region.
摘要:
The present invention provides a composition for forming a bottom anti-reflective coating, and also provides a photoresist pattern formation method employing that composition. The composition gives a bottom anti-reflective coating used in a lithographic process for manufacturing semiconductor devices, and the coating can be developed with a developing solution for photoresist. The composition contains a solvent, a polymer having a condensed polycyclic aromatic group, and a compound having a maleimide derivative or a maleic anhydride derivative. The composition may further contain a photo acid generator or a crosslinking agent.
摘要:
The present invention relates to a novel photosensitive composition comprising a) an organic polymer, b) a photobase generator of structure (1), and c) optionally a photoacid generator, (+A1−O2C)—B—(CO2−A2+)x (1) where A1+ and A2+ are independently an onium cation, x is an integer greater than or equal to 1, and B is a nonfluorinated hydrocarbon moiety. The photosensitive composition may be used as a photoresist composition or be used as an alkali developable antireflective underlayer coating composition.