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    Photoresist composition for deep ultraviolet lithography comprising a mixture of photoactive compounds
    2.
    发明授权
    Photoresist composition for deep ultraviolet lithography comprising a mixture of photoactive compounds 有权
    用于深紫外光刻的光致抗蚀剂组合物，其包含光活性化合物的混合物

    公开(公告)号：US06991888B2

    公开(公告)日：2006-01-31

    申请号：US10439472

    申请日：2003-05-16

    申请人： Munirathna Padmanaban ,  Takanori Kudo ,  Sangho Lee ,  Ralph R. Dammel ,  M. Dalil Rahman

    发明人： Munirathna Padmanaban ,  Takanori Kudo ,  Sangho Lee ,  Ralph R. Dammel ,  M. Dalil Rahman

    IPC分类号： G03F7/004 ,  C08F2/46 ,  C07C53/00 ,  G03C5/00

    CPC分类号： G03F7/0392 ,  G03F7/0045 ,  Y10S430/115

    摘要： The present invention relates to a novel photoresist composition that can be developed with an aqueous alkaline solution, and is capable of being imaged at exposure wavelengths in the deep ultraviolet. The invention also relates to a process for imaging the novel photoresist as well as novel photoacid generators.The novel photoresist comprises a) a polymer containing an acid labile group, and b) a novel mixture of photoactive compounds, where the mixture comprises a lower absorbing compound selected from structure 1 and 2, and a higher absorbing compound selected from structure 4 and 5, where, R1 and R2 R5, R6, R7, R8, and R9 are defined herein; m=1–5; X− is an anion, and Ar is selected from naphthyl, anthracyl, and structure 3, where R30, R31, R32, R33, and R34 are defined herein.

    摘要翻译： 本发明涉及一种可用碱性水溶液显影的新型光刻胶组合物，能够在深紫外线的曝光波长下成像。 本发明还涉及用于对新型光致抗蚀剂以及新型光酸产生剂进行成像的方法。 新型光致抗蚀剂包含a）含有酸不稳定基团的聚合物，和b）光活性化合物的新混合物，其中该混合物包含选自结构1和2的较低吸收化合物和选自结构4和5的较高吸收化合物 ，其中R 1和R 2 R 5，R 6，R 7，或N R 8，R 9和R 9在本文中定义; m = 1-5; X - 是阴离子，Ar选自萘基，蒽基和结构3，其中R 30，R 31，R SUB > 32，R 33和R 34在本文中定义。

    Photoresist composition for deep UV and process thereof
    4.
    发明授权
    Photoresist composition for deep UV and process thereof 失效
    用于深紫外线的光致抗蚀剂组合物及其工艺

    公开(公告)号：US06447980B1

    公开(公告)日：2002-09-10

    申请号：US09619336

    申请日：2000-07-19

    申请人： M. Dalil Rahman ,  Munirathna Padmanaban ,  Ralph R. Dammel

    发明人： M. Dalil Rahman ,  Munirathna Padmanaban ,  Ralph R. Dammel

    IPC分类号： G03C1492

    CPC分类号： G03F7/0397 ,  G03F7/0045 ,  G03F7/0395 ,  Y10S430/115

    摘要： The present invention relates to a chemically amplified system, which is, sensitive to wavelengths between 300 nm and 100 nm, and comprises a) a polymer that is insoluble an aqueous alkaline solution and comprises at least one acid labile group, b) a compound capable of producing an acid upon radiation. The present invention comprises a polymer that is made from a alicyclic hydrocarbon olefin, an acrylate with a pendant cyclic moeity, and a cyclic anhydride. The present invention also relates to a process for imaging such a photoresist.

    摘要翻译： 本发明涉及一种化学放大系统，其对300nm至100nm之间的波长敏感，并且包括a）不溶于碱性水溶液并且包含至少一种酸不稳定基团的聚合物，b）具有能力的化合物 在辐射时产生酸。 本发明包括由脂环烃烯烃，具有侧链环状的丙烯酸酯和环状酸酐制成的聚合物。 本发明还涉及这种光致抗蚀剂的成像方法。

    Photoresist Image-Forming Process Using Double Patterning
    6.
    发明申请
    Photoresist Image-Forming Process Using Double Patterning 审中-公开
    使用双重图案的光刻胶图像形成过程

    公开(公告)号：US20090253080A1

    公开(公告)日：2009-10-08

    申请号：US12061061

    申请日：2008-04-02

    申请人： Ralph R. Dammel ,  David Abdallah ,  Eric Alemy ,  Munirathna Padmanaban

    发明人： Ralph R. Dammel ,  David Abdallah ,  Eric Alemy ,  Munirathna Padmanaban

    IPC分类号： G03F7/30

    CPC分类号： G03F7/0035 ,  G03F7/40

    摘要： A process for forming a photoresist pattern on a device, comprising; a) forming a layer of first photoresist on a substrate from a first photoresist composition; b) imagewise exposing the first photoresist; c) developing the first photoresist to form a first photoresist pattern; d) treating the first photoresist pattern with a hardening compound comprising at least 2 amino (NH2) groups, thereby forming a hardened first photoresist pattern; e) forming a second photoresist layer on the region of the substrate including the hardened first photoresist pattern from a second photoresist composition; f) imagewise exposing the second photoresist; and, g) developing the imagewise exposed second photoresist to form a second photoresist pattern between the first photoresist pattern, thereby providing a double photoresist pattern.

    摘要翻译： 一种在器件上形成光致抗蚀剂图案的工艺，包括： a）从第一光致抗蚀剂组合物在衬底上形成第一光致抗蚀剂层; b）成像曝光第一光致抗蚀剂; c）显影第一光致抗蚀剂以形成第一光致抗蚀剂图案; d）用包含至少2个氨基（NH 2）基团的硬化化合物处理第一光致抗蚀剂图案，从而形成硬化的第一光致抗蚀剂图案; e）在包含来自第二光致抗蚀剂组合物的硬化的第一光致抗蚀剂图案的衬底的区域上形成第二光致抗蚀剂层; f）成像曝光第二光致抗蚀剂; 以及g）显影所述成像曝光的第二光致抗蚀剂以在所述第一光致抗蚀剂图案之间形成第二光致抗蚀剂图案，从而提供双光致抗蚀剂图案。

    Composition for coating over a photoresist pattern
    7.
    发明授权
    Composition for coating over a photoresist pattern 有权
    用于在光致抗蚀剂图案上涂覆的组合物

    公开(公告)号：US07595141B2

    公开(公告)日：2009-09-29

    申请号：US10973633

    申请日：2004-10-26

    申请人： Takanori Kudo ,  Munirathna Padmanaban ,  Ralph R. Dammel

    发明人： Takanori Kudo ,  Munirathna Padmanaban ,  Ralph R. Dammel

    IPC分类号： G03F7/00 ,  G03F7/004

    CPC分类号： G03F7/40

    摘要： The present invention relates to an aqueous coating composition for coating a photoresist pattern comprising a polymer containing amino group. The present invention also relates to a process for manufacturing a microelectronic device comprising providing a substrate with a photoresist pattern, coating the photoresist pattern with the novel coating material reacting a portion of the coating material in contact with the photoresist pattern, and removing a portion of the coating material which is not reacted with a removal solution.

    摘要翻译： 本发明涉及包含含有氨基的聚合物的光致抗蚀剂图案的水性涂料组合物。 本发明还涉及一种用于制造微电子器件的方法，包括提供具有光致抗蚀剂图案的基底，用新颖的涂层材料涂覆光致抗蚀剂图案，使一部分涂料与光致抗蚀剂图案接触，并且将一部分 不与去除溶液反应的涂料。

    Positive-Working Photoimageable Bottom Antireflective Coating
    9.
    发明申请
    Positive-Working Photoimageable Bottom Antireflective Coating 审中-公开
    正面照相底部防反射涂层

    公开(公告)号：US20110086312A1

    公开(公告)日：2011-04-14

    申请号：US12576622

    申请日：2009-10-09

    申请人： Ralph R. Dammel ,  Srinivasan Chakrapani ,  Munirathna Padmanaban ,  Shinji Miyazaki ,  Edward W. Ng ,  Takanori Kudo ,  Alberto D. Dioses ,  Francis M. Houlihan

    发明人： Ralph R. Dammel ,  Srinivasan Chakrapani ,  Munirathna Padmanaban ,  Shinji Miyazaki ,  Edward W. Ng ,  Takanori Kudo ,  Alberto D. Dioses ,  Francis M. Houlihan

    IPC分类号： G03F7/20 ,  G03F7/004

    CPC分类号： G03F7/091

    摘要： The present invention relates to a positive bottom photoimageable antireflective coating composition which is capable of being developed in an aqueous alkaline developer, wherein the antireflective coating composition comprises a polymer comprising at least one recurring unit with a chromophore group and one recurring unit with a hydroxyl and/or a carboxyl group, a vinyl ether terminated crosslinking agent of structure (7), and optionally, a photoacid generator and/or an acid and/or a thermal acid generator, where structure (7) is wherein W is selected from (C1-C30) linear, branched or cyclic alkyl moiety, substituted or unsubstituted (C3-C40) alicyclic hydrocarbon moiety and substituted is or unsubstituted (C3-C40) cycloalkylalkylene moiety; R is selected from C1-C10 linear or branched alkylene and n≧2. The invention further relates to a process for using such a composition.

    摘要翻译： 本发明涉及能够在含水碱性显影剂中显影的正底部可光成像抗反射涂料组合物，其中抗反射涂料组合物包含含有至少一个具有发色团的重复单元的聚合物和一个具有羟基的重复单元， /或羧基，结构式（7）的乙烯基醚封端的交联剂，以及任选的光酸产生剂和/或酸和/或热酸发生剂，其中结构（7）其中W选自（C1 -C 30）直链，支链或环状的烷基部分，取代或未取代的（C 3 -C 40）脂环烃部分和取代的或未取代的（C 3 -C 40）环烷基亚烷基部分; R选自C1-C10直链或支链亚烷基，n≥2。 本发明还涉及使用这种组合物的方法。